JPS6211514B2 - - Google Patents
Info
- Publication number
- JPS6211514B2 JPS6211514B2 JP9560075A JP9560075A JPS6211514B2 JP S6211514 B2 JPS6211514 B2 JP S6211514B2 JP 9560075 A JP9560075 A JP 9560075A JP 9560075 A JP9560075 A JP 9560075A JP S6211514 B2 JPS6211514 B2 JP S6211514B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- insulating film
- silicon oxide
- conductivity type
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010013642 Drooling Diseases 0.000 description 1
- 208000008630 Sialorrhea Diseases 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9560075A JPS5219968A (en) | 1975-08-06 | 1975-08-06 | Semiconductor ic manufacturig process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9560075A JPS5219968A (en) | 1975-08-06 | 1975-08-06 | Semiconductor ic manufacturig process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5219968A JPS5219968A (en) | 1977-02-15 |
| JPS6211514B2 true JPS6211514B2 (US07902200-20110308-C00004.png) | 1987-03-12 |
Family
ID=14142037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9560075A Granted JPS5219968A (en) | 1975-08-06 | 1975-08-06 | Semiconductor ic manufacturig process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5219968A (US07902200-20110308-C00004.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01138525U (US07902200-20110308-C00004.png) * | 1988-03-07 | 1989-09-21 | ||
| JPH0253321U (US07902200-20110308-C00004.png) * | 1988-10-08 | 1990-04-17 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS586126A (ja) * | 1981-07-03 | 1983-01-13 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1975
- 1975-08-06 JP JP9560075A patent/JPS5219968A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01138525U (US07902200-20110308-C00004.png) * | 1988-03-07 | 1989-09-21 | ||
| JPH0253321U (US07902200-20110308-C00004.png) * | 1988-10-08 | 1990-04-17 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5219968A (en) | 1977-02-15 |
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