JPS62112141U - - Google Patents
Info
- Publication number
- JPS62112141U JPS62112141U JP20364985U JP20364985U JPS62112141U JP S62112141 U JPS62112141 U JP S62112141U JP 20364985 U JP20364985 U JP 20364985U JP 20364985 U JP20364985 U JP 20364985U JP S62112141 U JPS62112141 U JP S62112141U
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- electrode
- chamber
- matching circuit
- ion etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000992 sputter etching Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 2
Description
第１図は本考案によるイオンエツチング装置の
一実施例を示す断面図、第２図は前記実施例にお
けるカソード側のマツチング回路の一具体例を示
す回路図、第３図は同じくアノード側のマツチン
グ回路の一具体例を示す回路図、第４図は従来装
置を示す断面図である。
１……チヤンバ、２……２つの平行平板電極の
うちの１つの電極であるアノード、３……２つの
平行平板電極のうちの１つの電極であるカソード
、４，２０……マツチング回路、５……高周波電
源、７……被エツチ試料。
FIG. 1 is a sectional view showing an embodiment of the ion etching apparatus according to the present invention, FIG. 2 is a circuit diagram showing a specific example of the matching circuit on the cathode side in the embodiment, and FIG. 3 is a matching circuit on the anode side. A circuit diagram showing a specific example of the circuit, and FIG. 4 is a sectional view showing a conventional device. DESCRIPTION OF SYMBOLS 1... Chamber, 2... Anode which is one electrode of two parallel plate electrodes, 3... Cathode which is one electrode of two parallel plate electrodes, 4, 20... Matching circuit, 5 ...High frequency power supply, 7...Sample to be etched.
Claims (1)
一方の電極にはインピーダンスをマツチングさせ
るマツチング回路を通じて高周波電力が印加され
、他方の電極は前記チヤンバとともに接地され、
前記電極のうちのいずれか一方の電極上に被エツ
チ試料が載置されるイオンエツチング装置におい
て、前記電極のうち接地側の電極にもインピーダ
ンスをマツチングさせるマツチング回路が設けら
れていることを特徴とするイオンエツチング装置
。 Two parallel plate electrodes are built into the chamber,
High frequency power is applied to one electrode through a matching circuit that matches impedance, and the other electrode is grounded together with the chamber,
An ion etching apparatus in which a sample to be etched is placed on one of the electrodes, characterized in that a matching circuit for matching impedance is also provided on the ground side of the electrodes. Ion etching equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20364985U JPS62112141U (en) | 1985-12-28 | 1985-12-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20364985U JPS62112141U (en) | 1985-12-28 | 1985-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62112141U true JPS62112141U (en) | 1987-07-17 |
Family
ID=31169175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20364985U Pending JPS62112141U (en) | 1985-12-28 | 1985-12-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62112141U (en) |
-
1985
- 1985-12-28 JP JP20364985U patent/JPS62112141U/ja active Pending
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