JPS6346839U - - Google Patents

Info

Publication number
JPS6346839U
JPS6346839U JP14050586U JP14050586U JPS6346839U JP S6346839 U JPS6346839 U JP S6346839U JP 14050586 U JP14050586 U JP 14050586U JP 14050586 U JP14050586 U JP 14050586U JP S6346839 U JPS6346839 U JP S6346839U
Authority
JP
Japan
Prior art keywords
substrate
electrode
generating
parallel
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14050586U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14050586U priority Critical patent/JPS6346839U/ja
Publication of JPS6346839U publication Critical patent/JPS6346839U/ja
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案によるドライエツチング装置の
一実施例を示す構成図である。 1……処理室、2……アノード電極、3……カ
ソード電極、4……半導体基板、5……マツチン
グボツクス、6……高周波電源、7A,7B,7
C,7D……永久磁石、9……同軸コイル。
FIG. 1 is a block diagram showing an embodiment of a dry etching apparatus according to the present invention. DESCRIPTION OF SYMBOLS 1... Processing chamber, 2... Anode electrode, 3... Cathode electrode, 4... Semiconductor substrate, 5... Matching box, 6... High frequency power supply, 7A, 7B, 7
C, 7D...Permanent magnet, 9...Coaxial coil.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 真空処理室内に相対向して配設された一対の平
行板型電極の一方に載置した被エツチング処理基
板を、エツチングガスを導入するとともに電極に
高周波電力を印加してプラズマを形成することに
よりエツチングするドライエツチング装置におい
て、平行平板電極間の電界と平行な磁界の発生手
段と前記基板の載置電極に対向する電極の表面近
傍に表面に平行な磁界の発生手段とを設けたこと
を特徴とするドライエツチング装置。
The substrate to be etched is placed on one side of a pair of parallel plate electrodes placed opposite each other in a vacuum processing chamber, and an etching gas is introduced into the substrate and high frequency power is applied to the electrode to form plasma. A dry etching apparatus for etching, characterized in that means for generating a magnetic field parallel to the electric field between the parallel plate electrodes and means for generating a magnetic field parallel to the surface near the surface of the electrode facing the electrode placed on the substrate are provided. Dry etching equipment.
JP14050586U 1986-09-16 1986-09-16 Pending JPS6346839U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14050586U JPS6346839U (en) 1986-09-16 1986-09-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14050586U JPS6346839U (en) 1986-09-16 1986-09-16

Publications (1)

Publication Number Publication Date
JPS6346839U true JPS6346839U (en) 1988-03-30

Family

ID=31047415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14050586U Pending JPS6346839U (en) 1986-09-16 1986-09-16

Country Status (1)

Country Link
JP (1) JPS6346839U (en)

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