JPS61190132U - - Google Patents
Info
- Publication number
- JPS61190132U JPS61190132U JP7434985U JP7434985U JPS61190132U JP S61190132 U JPS61190132 U JP S61190132U JP 7434985 U JP7434985 U JP 7434985U JP 7434985 U JP7434985 U JP 7434985U JP S61190132 U JPS61190132 U JP S61190132U
- Authority
- JP
- Japan
- Prior art keywords
- correction plate
- reactive ion
- ion etching
- etched
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 10
Landscapes
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Description
第１図は本考案になるリアクテイブイオンエツ
チング装置において使用される補正板を示す図、
第２図は補正板を用いた電界の乱れを補正を説明
するための図、第３図はバツチ型式のエツチング
処理を説明するための図、第４図はバツチ型式の
エツチング処理における基板の位置とエツチング
速度との関係を示す図、第５図は１対の平板電極
により生ずる電界を説明するための図、第６図は
平板電極に高周波電源を印加した際の状態を説明
するための図、第７図は陰極降下電圧特性を示す
図、第８図は電極に生ずる分布容量を説明するた
めの図、第９図は電極上に置かれた基板と分布容
量との関係を説明するための図、第１０図は陰極
降下電圧と基板の位置との関係を示す図である。
１…基板、２，７，８…補正板、３…電極、４
，５…平板電極、６…高周波電源、Ｃ，Ｃ１，Ｃ
２，…，Ｃｎ…容量。
FIG. 1 is a diagram showing a correction plate used in the reactive ion etching apparatus according to the present invention;
Figure 2 is a diagram for explaining correction of electric field disturbance using a correction plate, Figure 3 is a diagram for explaining batch type etching process, and Figure 4 is a diagram for explaining the position of the substrate in batch type etching process. Figure 5 is a diagram to explain the electric field generated by a pair of flat plate electrodes, and Figure 6 is a diagram to explain the state when high frequency power is applied to the flat plate electrodes. , Figure 7 is a diagram showing the cathode drop voltage characteristics, Figure 8 is a diagram to explain the distributed capacitance that occurs in the electrode, and Figure 9 is a diagram to explain the relationship between the substrate placed on the electrode and the distributed capacitance. and FIG. 10 are diagrams showing the relationship between the cathode drop voltage and the position of the substrate. 1... Substrate, 2, 7, 8... Correction plate, 3... Electrode, 4
, 5... Flat plate electrode, 6... High frequency power supply, C, C 1 , C
2 ,...,Cn...capacity.
Claims (1)
の平板電極のうちの一方の平板電極上に被エツチ
ング基板を置き、真空槽内に反応ガスを導入した
後、高周波電力を印加し、プラズマを発生させて
、プラズマ中の活性種やイオンを前記各平板電極
間に印加されている電界を利用してエツチング加
工処理を行なうリアクテイブイオンエツチング装
置において、 誘電体で形成され、前記平板電極の外周部から
内部に向かつて順次容量が変化する補正板を、前
記被エツチング基板の周囲に設置してエツチング
加工処理を行なうリアクテイブイオンエツチング
装置。 (2) この補正板は厚さを変化させて形成したこ
とにより容量が変化する補正板である実用新案登
録請求の範囲第１項のリアクテイブイオンエツチ
ング装置。 (3) この補正板は誘電率が異なる物質で形成し
たことにより容量が変化する補正板である実用新
案登録請求の範囲第１項のリアクテイブイオンエ
ツチング装置。[Claims for Utility Model Registration] (1) A substrate to be etched is placed on one of two flat plate electrodes installed in parallel and facing each other in a vacuum chamber, and a reactive gas is introduced into the vacuum chamber. After the introduction, high frequency power is applied to generate plasma, and active species and ions in the plasma are etched using the electric field applied between the flat electrodes in a reactive ion etching device. . A reactive ion etching apparatus in which an etching process is performed by installing a correction plate made of a dielectric material and having a capacitance that gradually changes from the outer periphery of the plate electrode toward the inside, around the substrate to be etched. (2) The reactive ion etching device according to claim 1, wherein the correction plate is a correction plate whose capacitance changes by being formed with a varying thickness. (3) The reactive ion etching device according to claim 1, wherein the correction plate is a correction plate whose capacitance changes because it is formed of materials with different dielectric constants.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7434985U JPS61190132U (en) | 1985-05-20 | 1985-05-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7434985U JPS61190132U (en) | 1985-05-20 | 1985-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61190132U true JPS61190132U (en) | 1986-11-27 |
Family
ID=30614564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7434985U Pending JPS61190132U (en) | 1985-05-20 | 1985-05-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61190132U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62108527A (en) * | 1985-11-06 | 1987-05-19 | Anelva Corp | Dry etching apparatus |
| JPH01298182A (en) * | 1988-05-27 | 1989-12-01 | Hitachi Ltd | Etching device |
-
1985
- 1985-05-20 JP JP7434985U patent/JPS61190132U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62108527A (en) * | 1985-11-06 | 1987-05-19 | Anelva Corp | Dry etching apparatus |
| JPH01298182A (en) * | 1988-05-27 | 1989-12-01 | Hitachi Ltd | Etching device |
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