JPS63153525U - - Google Patents
Info
- Publication number
- JPS63153525U JPS63153525U JP4556187U JP4556187U JPS63153525U JP S63153525 U JPS63153525 U JP S63153525U JP 4556187 U JP4556187 U JP 4556187U JP 4556187 U JP4556187 U JP 4556187U JP S63153525 U JPS63153525 U JP S63153525U
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- processing chamber
- dry etching
- magnetic field
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案による第１の実施例に係るドラ
イエツチング装置の構成図、第２図は本考案によ
る第２の実施例に係るドライエツチング装置の構
成図である。
１……処理室、２……陰極、３……陽極、４…
…マツチングボツクス、５……高周波電源、９…
…基板、１０Ａ，１０Ｂ，１０Ｃ……同軸コイル
、１１……同軸コイル、１２，１３，１４，１５
……直流電源、１６……磁力線、１７，１７′…
…磁界強度分布、１９．２１……駆動装置。
FIG. 1 is a block diagram of a dry etching apparatus according to a first embodiment of the present invention, and FIG. 2 is a block diagram of a dry etching apparatus according to a second embodiment of the present invention. 1...Processing chamber, 2...Cathode, 3...Anode, 4...
...Matching box, 5...High frequency power supply, 9...
...Substrate, 10A, 10B, 10C... Coaxial coil, 11... Coaxial coil, 12, 13, 14, 15
...DC power supply, 16...Magnetic field lines, 17,17'...
...Magnetic field strength distribution, 19.21...Drive device.
Claims (1)
行平板型電極の一方に載置した基板を、電極間に
高周波電力を印加してエツチングガスのプラズマ
を形成することによりエツチング処理するドライ
エツチング装置において、電極背面及び処理室外
周に電極間の磁界強度分布制御可能な励磁手段を
具備してなることを特徴とするドライエツチング
装置。 Dry etching is a process in which a substrate placed on one of a pair of parallel plate electrodes placed opposite each other in a vacuum processing chamber is etched by applying high frequency power between the electrodes to form etching gas plasma. 1. A dry etching apparatus, characterized in that the apparatus is equipped with excitation means on the back surface of the electrodes and on the outer periphery of the processing chamber, which can control the distribution of magnetic field intensity between the electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4556187U JPS63153525U (en) | 1987-03-30 | 1987-03-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4556187U JPS63153525U (en) | 1987-03-30 | 1987-03-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63153525U true JPS63153525U (en) | 1988-10-07 |
Family
ID=30864407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4556187U Pending JPS63153525U (en) | 1987-03-30 | 1987-03-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63153525U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02211625A (en) * | 1989-02-13 | 1990-08-22 | Hitachi Ltd | Plasma treatment and device therefor |
-
1987
- 1987-03-30 JP JP4556187U patent/JPS63153525U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02211625A (en) * | 1989-02-13 | 1990-08-22 | Hitachi Ltd | Plasma treatment and device therefor |
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