JPS6211129A - 半導体薄膜の形成・分解装置 - Google Patents
半導体薄膜の形成・分解装置Info
- Publication number
- JPS6211129A JPS6211129A JP14976285A JP14976285A JPS6211129A JP S6211129 A JPS6211129 A JP S6211129A JP 14976285 A JP14976285 A JP 14976285A JP 14976285 A JP14976285 A JP 14976285A JP S6211129 A JPS6211129 A JP S6211129A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- gas
- semiconductor thin
- decomposition
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012528 membrane Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims abstract description 10
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims abstract description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims description 69
- 239000010409 thin film Substances 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 25
- 230000005855 radiation Effects 0.000 claims description 12
- 238000011084 recovery Methods 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 8
- 238000011109 contamination Methods 0.000 abstract description 5
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract description 3
- 239000004809 Teflon Substances 0.000 abstract description 2
- 229920006362 Teflon® Polymers 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 238000012546 transfer Methods 0.000 abstract description 2
- 230000002285 radioactive effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000004063 acid-resistant material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14976285A JPS6211129A (ja) | 1985-07-08 | 1985-07-08 | 半導体薄膜の形成・分解装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14976285A JPS6211129A (ja) | 1985-07-08 | 1985-07-08 | 半導体薄膜の形成・分解装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6211129A true JPS6211129A (ja) | 1987-01-20 |
| JPH0531940B2 JPH0531940B2 (enrdf_load_stackoverflow) | 1993-05-13 |
Family
ID=15482184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14976285A Granted JPS6211129A (ja) | 1985-07-08 | 1985-07-08 | 半導体薄膜の形成・分解装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6211129A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5762755A (en) * | 1991-05-21 | 1998-06-09 | Genus, Inc. | Organic preclean for improving vapor phase wafer etch uniformity |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232413A (ja) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | 半導体装置の製造方法及びその製造装置 |
| JPS6069531A (ja) * | 1983-09-26 | 1985-04-20 | Toshiba Corp | 半導体薄膜の分解装置 |
-
1985
- 1985-07-08 JP JP14976285A patent/JPS6211129A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232413A (ja) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | 半導体装置の製造方法及びその製造装置 |
| JPS6069531A (ja) * | 1983-09-26 | 1985-04-20 | Toshiba Corp | 半導体薄膜の分解装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5762755A (en) * | 1991-05-21 | 1998-06-09 | Genus, Inc. | Organic preclean for improving vapor phase wafer etch uniformity |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0531940B2 (enrdf_load_stackoverflow) | 1993-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |