JPS6211129A - 半導体薄膜の形成・分解装置 - Google Patents

半導体薄膜の形成・分解装置

Info

Publication number
JPS6211129A
JPS6211129A JP14976285A JP14976285A JPS6211129A JP S6211129 A JPS6211129 A JP S6211129A JP 14976285 A JP14976285 A JP 14976285A JP 14976285 A JP14976285 A JP 14976285A JP S6211129 A JPS6211129 A JP S6211129A
Authority
JP
Japan
Prior art keywords
thin film
gas
semiconductor thin
decomposition
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14976285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0531940B2 (cs
Inventor
Ayako Shimazaki
嶋崎　綾子
Moriya Miyashita
守也 宮下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP14976285A priority Critical patent/JPS6211129A/ja
Publication of JPS6211129A publication Critical patent/JPS6211129A/ja
Publication of JPH0531940B2 publication Critical patent/JPH0531940B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Formation Of Insulating Films (AREA)
JP14976285A 1985-07-08 1985-07-08 半導体薄膜の形成・分解装置 Granted JPS6211129A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14976285A JPS6211129A (ja) 1985-07-08 1985-07-08 半導体薄膜の形成・分解装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14976285A JPS6211129A (ja) 1985-07-08 1985-07-08 半導体薄膜の形成・分解装置

Publications (2)

Publication Number Publication Date
JPS6211129A true JPS6211129A (ja) 1987-01-20
JPH0531940B2 JPH0531940B2 (cs) 1993-05-13

Family

ID=15482184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14976285A Granted JPS6211129A (ja) 1985-07-08 1985-07-08 半導体薄膜の形成・分解装置

Country Status (1)

Country Link
JP (1) JPS6211129A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5762755A (en) * 1991-05-21 1998-06-09 Genus, Inc. Organic preclean for improving vapor phase wafer etch uniformity

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232413A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体装置の製造方法及びその製造装置
JPS6069531A (ja) * 1983-09-26 1985-04-20 Toshiba Corp 半導体薄膜の分解装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232413A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体装置の製造方法及びその製造装置
JPS6069531A (ja) * 1983-09-26 1985-04-20 Toshiba Corp 半導体薄膜の分解装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5762755A (en) * 1991-05-21 1998-06-09 Genus, Inc. Organic preclean for improving vapor phase wafer etch uniformity

Also Published As

Publication number Publication date
JPH0531940B2 (cs) 1993-05-13

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Legal Events

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