JPH0531940B2 - - Google Patents

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Publication number
JPH0531940B2
JPH0531940B2 JP60149762A JP14976285A JPH0531940B2 JP H0531940 B2 JPH0531940 B2 JP H0531940B2 JP 60149762 A JP60149762 A JP 60149762A JP 14976285 A JP14976285 A JP 14976285A JP H0531940 B2 JPH0531940 B2 JP H0531940B2
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
decomposition
gas
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60149762A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6211129A (ja
Inventor
Ayako Shimazaki
Morya Myashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP14976285A priority Critical patent/JPS6211129A/ja
Publication of JPS6211129A publication Critical patent/JPS6211129A/ja
Publication of JPH0531940B2 publication Critical patent/JPH0531940B2/ja
Granted legal-status Critical Current

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  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Formation Of Insulating Films (AREA)
JP14976285A 1985-07-08 1985-07-08 半導体薄膜の形成・分解装置 Granted JPS6211129A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14976285A JPS6211129A (ja) 1985-07-08 1985-07-08 半導体薄膜の形成・分解装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14976285A JPS6211129A (ja) 1985-07-08 1985-07-08 半導体薄膜の形成・分解装置

Publications (2)

Publication Number Publication Date
JPS6211129A JPS6211129A (ja) 1987-01-20
JPH0531940B2 true JPH0531940B2 (cs) 1993-05-13

Family

ID=15482184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14976285A Granted JPS6211129A (ja) 1985-07-08 1985-07-08 半導体薄膜の形成・分解装置

Country Status (1)

Country Link
JP (1) JPS6211129A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992022084A1 (en) * 1991-05-21 1992-12-10 Advantage Production Technology, Inc. Organic preclean for improving vapor phase wafer etch uniformity

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232413A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体装置の製造方法及びその製造装置
JPH0658927B2 (ja) * 1983-09-26 1994-08-03 株式会社東芝 半導体薄膜の分析方法および分析用試料の回収装置

Also Published As

Publication number Publication date
JPS6211129A (ja) 1987-01-20

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term