JPS6210687B2 - - Google Patents

Info

Publication number
JPS6210687B2
JPS6210687B2 JP15260179A JP15260179A JPS6210687B2 JP S6210687 B2 JPS6210687 B2 JP S6210687B2 JP 15260179 A JP15260179 A JP 15260179A JP 15260179 A JP15260179 A JP 15260179A JP S6210687 B2 JPS6210687 B2 JP S6210687B2
Authority
JP
Japan
Prior art keywords
electrode
etching
electrodes
plasma
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15260179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5676242A (en
Inventor
Isamu Hijikata
Akira Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP15260179A priority Critical patent/JPS5676242A/ja
Publication of JPS5676242A publication Critical patent/JPS5676242A/ja
Publication of JPS6210687B2 publication Critical patent/JPS6210687B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP15260179A 1979-11-26 1979-11-26 Treating apparatus using gas plasma reaction Granted JPS5676242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15260179A JPS5676242A (en) 1979-11-26 1979-11-26 Treating apparatus using gas plasma reaction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15260179A JPS5676242A (en) 1979-11-26 1979-11-26 Treating apparatus using gas plasma reaction

Publications (2)

Publication Number Publication Date
JPS5676242A JPS5676242A (en) 1981-06-23
JPS6210687B2 true JPS6210687B2 (enrdf_load_stackoverflow) 1987-03-07

Family

ID=15543973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15260179A Granted JPS5676242A (en) 1979-11-26 1979-11-26 Treating apparatus using gas plasma reaction

Country Status (1)

Country Link
JP (1) JPS5676242A (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852325B2 (ja) * 1979-12-14 1983-11-22 富士通株式会社 プラズマエッチング処理方法および処理装置
JPS5858147A (ja) * 1981-09-30 1983-04-06 Shimadzu Corp プラズマ処理装置
JPS59139627A (ja) * 1983-01-31 1984-08-10 Hitachi Ltd ドライエツチング装置
JPS59189934A (ja) * 1983-04-13 1984-10-27 Nippon Telegr & Teleph Corp <Ntt> 非晶質薄膜形成法及びそれに用いる装置
JPS61267325A (ja) * 1985-05-22 1986-11-26 Tokyo Denshi Kagaku Kk 有機膜の除去方法
US5209803A (en) * 1988-08-30 1993-05-11 Matrix Integrated Systems, Inc. Parallel plate reactor and method of use
JP3353514B2 (ja) * 1994-12-09 2002-12-03 ソニー株式会社 プラズマ処理装置、プラズマ処理方法及び半導体装置の作製方法
US7556740B2 (en) 2002-08-27 2009-07-07 Kyocera Corporation Method for producing a solar cell
US7556741B2 (en) 2002-08-28 2009-07-07 Kyocera Corporation Method for producing a solar cell
WO2012011171A1 (ja) * 2010-07-21 2012-01-26 トヨタ自動車株式会社 エッチング装置
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN104071747B (zh) * 2014-07-14 2016-07-06 大连理工大学 一种等离子体甲烷重整制备合成气的方法
JP2025052754A (ja) * 2023-09-25 2025-04-07 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JPS5676242A (en) 1981-06-23

Similar Documents

Publication Publication Date Title
JPS59126778A (ja) プラズマエツチング方法及びその装置
US4342901A (en) Plasma etching electrode
JPS6210687B2 (enrdf_load_stackoverflow)
JPH06163467A (ja) エッチング装置
JP2000173993A (ja) プラズマ処理装置およびエッチング方法
JP3205878B2 (ja) ドライエッチング装置
JPS61119686A (ja) 平行平板型プラズマエツチング装置
JP3173693B2 (ja) プラズマ処理装置及びその方法
JPH03179735A (ja) プラズマ処理装置
JPH07153743A (ja) プラズマ処理装置
JP3032362B2 (ja) 同軸型プラズマ処理装置
JPS60201632A (ja) ドライエツチング装置
JPH0638405B2 (ja) プラズマ反応処理装置
JPH0241167B2 (enrdf_load_stackoverflow)
JP2885150B2 (ja) ドライエッチング装置のドライクリーニング方法
JPH0254929A (ja) プラズマ処理装置
JPH02268429A (ja) プラズマエッチング装置
JPH06338460A (ja) 放電処理装置
JPS596544A (ja) プラズマエツチング用半導体基板載置治具
JPH033251A (ja) 試料保持装置
JPH0517880Y2 (enrdf_load_stackoverflow)
JPH10150022A (ja) エッチング方法および装置
JPS6366910B2 (enrdf_load_stackoverflow)
JPH0513006Y2 (enrdf_load_stackoverflow)
JPH0324777B2 (enrdf_load_stackoverflow)