JPS6210036B2 - - Google Patents
Info
- Publication number
- JPS6210036B2 JPS6210036B2 JP3178982A JP3178982A JPS6210036B2 JP S6210036 B2 JPS6210036 B2 JP S6210036B2 JP 3178982 A JP3178982 A JP 3178982A JP 3178982 A JP3178982 A JP 3178982A JP S6210036 B2 JPS6210036 B2 JP S6210036B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- resist layer
- metal layer
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3178982A JPS58151023A (ja) | 1982-03-02 | 1982-03-02 | 多層よりなるレジスト層の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3178982A JPS58151023A (ja) | 1982-03-02 | 1982-03-02 | 多層よりなるレジスト層の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58151023A JPS58151023A (ja) | 1983-09-08 |
| JPS6210036B2 true JPS6210036B2 (enrdf_load_stackoverflow) | 1987-03-04 |
Family
ID=12340825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3178982A Granted JPS58151023A (ja) | 1982-03-02 | 1982-03-02 | 多層よりなるレジスト層の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58151023A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58169910A (ja) * | 1982-03-30 | 1983-10-06 | Fujitsu Ltd | 微細パタ−ン形成方法 |
| JPS60111243A (ja) * | 1983-11-21 | 1985-06-17 | Nippon Telegr & Teleph Corp <Ntt> | 有機高分子膜のエツチング方法 |
| JPH079875B2 (ja) * | 1985-09-19 | 1995-02-01 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| JP2758595B2 (ja) * | 1986-03-04 | 1998-05-28 | 日本電気株式会社 | 三層レジスト構造 |
| JPS6368834A (ja) * | 1986-09-10 | 1988-03-28 | Sumitomo Chem Co Ltd | ポジ型フオトレジスト組成物の厚膜形成方法 |
-
1982
- 1982-03-02 JP JP3178982A patent/JPS58151023A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58151023A (ja) | 1983-09-08 |
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