JPS6197966A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6197966A
JPS6197966A JP59219830A JP21983084A JPS6197966A JP S6197966 A JPS6197966 A JP S6197966A JP 59219830 A JP59219830 A JP 59219830A JP 21983084 A JP21983084 A JP 21983084A JP S6197966 A JPS6197966 A JP S6197966A
Authority
JP
Japan
Prior art keywords
region
base
emitter
barrier
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59219830A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0458706B2 (enrdf_load_stackoverflow
Inventor
Kenichi Imamura
健一 今村
Naoki Yokoyama
直樹 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59219830A priority Critical patent/JPS6197966A/ja
Publication of JPS6197966A publication Critical patent/JPS6197966A/ja
Publication of JPH0458706B2 publication Critical patent/JPH0458706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Bipolar Transistors (AREA)
JP59219830A 1984-10-19 1984-10-19 半導体装置 Granted JPS6197966A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59219830A JPS6197966A (ja) 1984-10-19 1984-10-19 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59219830A JPS6197966A (ja) 1984-10-19 1984-10-19 半導体装置

Publications (2)

Publication Number Publication Date
JPS6197966A true JPS6197966A (ja) 1986-05-16
JPH0458706B2 JPH0458706B2 (enrdf_load_stackoverflow) 1992-09-18

Family

ID=16741708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59219830A Granted JPS6197966A (ja) 1984-10-19 1984-10-19 半導体装置

Country Status (1)

Country Link
JP (1) JPS6197966A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS627159A (ja) * 1985-07-03 1987-01-14 Agency Of Ind Science & Technol 半導体装置
JPS6340369A (ja) * 1986-08-05 1988-02-20 Nec Corp ホツト・エレクトロン・トランジスタ
US4967254A (en) * 1987-07-16 1990-10-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5436192A (en) * 1989-03-24 1995-07-25 Xerox Corporation Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998969A (enrdf_load_stackoverflow) * 1973-01-24 1974-09-19
JPS5039076A (enrdf_load_stackoverflow) * 1973-08-08 1975-04-10
JPS56114370A (en) * 1980-02-04 1981-09-08 Ibm Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998969A (enrdf_load_stackoverflow) * 1973-01-24 1974-09-19
JPS5039076A (enrdf_load_stackoverflow) * 1973-08-08 1975-04-10
JPS56114370A (en) * 1980-02-04 1981-09-08 Ibm Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS627159A (ja) * 1985-07-03 1987-01-14 Agency Of Ind Science & Technol 半導体装置
JPS6340369A (ja) * 1986-08-05 1988-02-20 Nec Corp ホツト・エレクトロン・トランジスタ
US4967254A (en) * 1987-07-16 1990-10-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5436192A (en) * 1989-03-24 1995-07-25 Xerox Corporation Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth

Also Published As

Publication number Publication date
JPH0458706B2 (enrdf_load_stackoverflow) 1992-09-18

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