JPS6197938A - Method for assembling semiconductor element - Google Patents

Method for assembling semiconductor element

Info

Publication number
JPS6197938A
JPS6197938A JP59219903A JP21990384A JPS6197938A JP S6197938 A JPS6197938 A JP S6197938A JP 59219903 A JP59219903 A JP 59219903A JP 21990384 A JP21990384 A JP 21990384A JP S6197938 A JPS6197938 A JP S6197938A
Authority
JP
Japan
Prior art keywords
bonding
ball
wire
copper
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59219903A
Other languages
Japanese (ja)
Other versions
JPH0367340B2 (en
Inventor
Mitsuo Kobayashi
三男 小林
Osamu Usuda
修 薄田
Yoshihiko Sano
芳彦 佐野
Koichiro Atsumi
幸一郎 渥美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59219903A priority Critical patent/JPS6197938A/en
Priority to EP85109406A priority patent/EP0169574B1/en
Priority to US06/759,273 priority patent/US4732313A/en
Priority to DE8585109406T priority patent/DE3577371D1/en
Priority to KR1019850005537A priority patent/KR900000205B1/en
Priority to CN85106110A priority patent/CN85106110B/en
Publication of JPS6197938A publication Critical patent/JPS6197938A/en
Publication of JPH0367340B2 publication Critical patent/JPH0367340B2/ja
Granted legal-status Critical Current

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable to perform a high strength wire bonding on a semiconductor pellet at low cost in a highly reliable manner by a method wherein the ball formed at the tip of a bonding wire is inroaded into the region to be bonded in a sufficient reducing atmosphere. CONSTITUTION:Reducing gas such as N2 and H2 10% is continuously fed into the conveying path 10 with which a lead frame 11 is conveyed, and the conveying path 10 is maintained in a sufficient reducing atmosphere. A capillary 18 is lowered, and a bonding wire 17 is thermo-press welded on an electrode pad 27 through the intermediary of a ball 29. At this time, the ball 29 is crushed in the state wherein it is inroaded into an electrode pad 27 at least as deep as the thickness (x) of 0.5-3mum of the ball 29, it is turned into a flat part 29a and formed into one body with the electrode pad 27.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体素子の組立方法に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a method for assembling a semiconductor device.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来の半導体素子の組立方法では、第６図に示す如く、
リードフレーム１のマウント床に装着された半導体ペレ
ット２上の電極パッド３と外部リード４との接続は、金
線で作られたボンディング線５を架設することにより行
われている。このようにデンディング線５に金線を採用
するものでは、次のような問題がある。In the conventional semiconductor device assembly method, as shown in FIG.
The electrode pads 3 on the semiconductor pellet 2 mounted on the mounting floor of the lead frame 1 are connected to the external leads 4 by laying bonding wires 5 made of gold wire. In this way, when a gold wire is used for the denting wire 5, there are the following problems.

■　高温でざンｒイング線５の架設を行うと、Ａｔ製の
電極・９ツド３とメンディング線５の接合部に金とアル
ミニウムの化合物が生じる。このため接合部で電気特性
の劣化が生じる。(2) When the cutting wire 5 is installed at a high temperature, a compound of gold and aluminum is generated at the joint between the At electrode/9-piece 3 and the mending wire 5. This causes deterioration of electrical characteristics at the joint.

■　金線からなるボンディング線５自身に酸化が起きな
い場合であっても、接合部の電気特性の劣化によって半
導体素子の信頼性が低下する。(2) Even if the bonding wire 5 itself made of gold wire is not oxidized, the reliability of the semiconductor element decreases due to the deterioration of the electrical characteristics of the bonding portion.

■　金とアルミニウムの化合物は？ンディング処理後の
放置された状態下でも発生するため、電気特性の安定し
た半導体素子が得られない。■ What is a compound of gold and aluminum? Since this occurs even when left unattended after the bonding process, a semiconductor element with stable electrical characteristics cannot be obtained.

■　金線は高価であるため、製造価格が高くなる。■ Since gold wire is expensive, the manufacturing price will be high.

このような問題を解消するために特願昭５５−８８３１
８号公報にて被ボンデイング領域を選択的に活性化する
ことにより、銅線からなるメンディング線と銅製のリー
ドフレーム間でボンディング線の架設を行う技術が開示
されている。In order to solve this problem, Japanese Patent Application No. 55-8831 was filed.
No. 8 discloses a technique for constructing a bonding wire between a mending wire made of copper wire and a lead frame made of copper by selectively activating a region to be bonded.

しかしながら、この技術ではボンディング線の方に発生
する酸化物によって接合不良が発生すると共に、ボンデ
ィング線の先端部に所定のビールを形成するのが難しい
ため、接合不良を招く問題がある。更に、各々のボンデ
ィング処理毎に被ボンデイング領域の活性化を行うため
、作業性が悪い。However, this technique has problems in that bonding defects occur due to oxides generated on the bonding wire, and that it is difficult to form a predetermined beer at the tip of the bonding wire, leading to bonding defects. Furthermore, since the bonding target region is activated for each bonding process, workability is poor.

また、特願昭５７−５１２３７号公報では、ボンディン
グ線を導出するキャピラリの先端部を還元雰囲気に保た
れたカバー内に導入して、所望形状のボールを形成する
と共にボンディング線の酸化防止をしてボンディング処
理を行う技術が開示されている。しかしながら、この技
術では還元雰囲気を保つためのカバーを含んだ複雑な機
構が必要となシ、１秒以下の処理速度で行われるボンデ
ィング処理の下では、故障が起き易すく保守管理に手間
を要する問題がある。また、外部リードが形成されたリ
ードフレーム側の酸化物を除去できないため、銅線から
なるボンディング線と銅製のリードフレームとの間では
信頼性の高いボンディング処理を行うことができない問
題がある。Furthermore, in Japanese Patent Application No. 57-51237, the tip of a capillary from which a bonding wire is led is introduced into a cover kept in a reducing atmosphere to form a ball with a desired shape and to prevent oxidation of the bonding wire. A technique for performing a bonding process is disclosed. However, this technology requires a complicated mechanism including a cover to maintain a reducing atmosphere, and when the bonding process is performed at a processing speed of less than 1 second, breakdowns are likely to occur and maintenance is labor-intensive. There's a problem. Further, since the oxide on the lead frame side on which the external leads are formed cannot be removed, there is a problem that a highly reliable bonding process cannot be performed between a bonding wire made of copper wire and a lead frame made of copper.

〔発明の目的〕[Purpose of the invention]

本発明は、半導体ペレットに高い信頼性と高い強度の下
に、しかも安価にワイヤざンディンダを施すことができ
る半導体素子の組立方法を提供することをその目的とす
るものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for assembling a semiconductor element that can wire-zandinder a semiconductor pellet with high reliability and high strength at a low cost.

〔発明の概要〕[Summary of the invention]

本発明は、リードフレームの搬送路、ピンガイング処理
を行うボンディング処理部及びボンディング線を導出す
るキャピラリの周辺領域を常に十分な還元雰囲気に保ち
、かつ、ボンディング線の先端部に形成したボールをそ
の肉厚の０．５〜３μｍが被ボンデイング領域に喰込む
ようにしたことにより、半導体ペレットに高い信頼性と
萬い強度の下に、しかも安価にワイヤデンディングを行
うことができる半導体素子の組立方法である。The present invention always maintains a sufficient reducing atmosphere in the lead frame conveyance path, the bonding processing section that performs the pinning process, and the surrounding area of the capillary from which the bonding wire is led out, and also allows the ball formed at the tip of the bonding wire to A method for assembling a semiconductor device that enables wire-dending to semiconductor pellets with high reliability and strength, and at low cost, by allowing a thickness of 0.5 to 3 μm to penetrate into the region to be bonded. It is.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例について図面を参照して説明する
。Embodiments of the present invention will be described below with reference to the drawings.

第１図は、本発明方法をリードフレームの移動順路に従
って示す説明図である。図中１０は、リードフレーム１
ノを搬送する搬送路である。FIG. 1 is an explanatory diagram showing the method of the present invention according to the movement route of a lead frame. 10 in the figure is lead frame 1
This is a conveyance path for conveying materials.

搬送路１０内には例えばガス源からＮ２とＨ２１０％の
ような還元性のガスが連続的に供給され、十分に還元性
の雰囲気に保たれている。搬送路ｌＯ内には、グイボン
ディング部１２、ワイヤボンディング部ｌ　３、ポスト
デンディンダ部１４が所定の間隔を設けて配置されてい
る。A reducing gas such as 10% N2 and H2 is continuously supplied into the conveyance path 10 from a gas source to maintain a sufficiently reducing atmosphere. A wire bonding section 12, a wire bonding section 13, and a post-dending section 14 are arranged within the transport path 1O with a predetermined interval.

グイボンディング部の搬送路１１の天井部には、半導体
ヘレット１５をグイボンディング部１２に供給するコレ
ット等の把持具が出入する窓１６が開口している。ワイ
ヤメンディング部１３の搬送路１１の天井部には、ボン
ディング線１２を供給するキャピラリ１８をがンディン
ダ部１２内に出入させるための窓１９が開口されている
。゛ポストボンディング部１４の搬送路１ノの天井部に
は、？ンディング線１７をリードフレーム１２の外部リ
ード２１側に熱圧着させるための抑圧具２０が出入する
窓２２が開口されている。また、搬送路１ノの床部には
、ガイドレール等からなる搬送手段が設けられている。A window 16 is opened in the ceiling of the conveyance path 11 of the goo bonding section, through which a gripper such as a collet for supplying the semiconductor heel 15 to the goo bonding section 12 enters and exits. A window 19 is opened in the ceiling of the conveyance path 11 of the wire mending section 13 for allowing a capillary 18 for supplying the bonding wire 12 to enter and leave the bonding section 12.゛Is there anything on the ceiling of the transport path 1 of the post bonding section 14? A window 22 is opened through which a suppressor 20 for thermocompression bonding the terminal wire 17 to the external lead 21 side of the lead frame 12 enters and exits. Furthermore, a conveyance means consisting of a guide rail or the like is provided on the floor of the conveyance path 1.

グイざンディング部１２、ワイヤボンディング部１３、
ボス）＆ンディング部１４の床部には、リードフレーム
１２を所定温度に加熱するためのヒータ’　３　ｅ　２
４　＃　２５が内蔵されている。Guisanding part 12, wire bonding part 13,
A heater for heating the lead frame 12 to a predetermined temperature is provided on the floor of the boss and landing section 14.
4 #25 is built-in.

而して、先ず、リードフレーム１ノを搬送手段によりグ
イボンディング部１２に供給する。First, the lead frame 1 is supplied to the bonding section 12 by a conveying means.

リードフレーム１１は、無酸素銅、リン脱酸銅、Ｃｕ−
２０％Ａｕ等の銅または銅合金で形成されている。ダイ
ボンディングｓ１２に供給されたリードフレーム１ノは
、ヒータ２３で所定温度に加熱される。この状態で窓１
６から半導体ペレ、ト１５が供給され、リードフレーム
１ノのマウント部に半田層２６を介して半導体ペレット
１５が装着される。The lead frame 11 is made of oxygen-free copper, phosphorus-deoxidized copper, Cu-
It is made of copper or copper alloy such as 20% Au. The lead frame 1 supplied to the die bonding s12 is heated to a predetermined temperature by the heater 23. In this state, window 1
A semiconductor pellet 15 is supplied from 6, and is mounted on the mount portion of the lead frame 1 via a solder layer 26.

次に、第２図（４）に示す如く、半導体ベレット１５が
装着されたリードフレーム１ノは、ダイメンディング部
１２に供給される。グイデンディング部１２の所定位置
に設定されると、リードフレーム１１はヒータ２４によ
って約３００℃に加熱され、半導体ベレット１５上の電
極も所定温度に加熱される。次めで、窓１９の入口部ま
でキャピラリ１８が降下し、窓１９の近傍に設けられた
バーナー２８によりキャピラリ１８の先端部から導出し
たボンディング線１７の先端部分にボール２９を形成す
る。ボンディング線１７は、無酸素銅、リン脱酸銅、Ｃ
ｕ−２０％Ａｕ等の銅または銅合金で形成されている。Next, as shown in FIG. 2(4), the lead frame 1 with the semiconductor pellet 15 attached thereto is supplied to the die-mending section 12. When set at a predetermined position in the guiding portion 12, the lead frame 11 is heated to about 300° C. by the heater 24, and the electrodes on the semiconductor pellet 15 are also heated to a predetermined temperature. Next, the capillary 18 is lowered to the entrance of the window 19, and a burner 28 provided near the window 19 forms a ball 29 at the tip of the bonding wire 17 led out from the tip of the capillary 18. The bonding wire 17 is made of oxygen-free copper, phosphorus-deoxidized copper, C
It is made of copper or copper alloy such as u-20% Au.

ここで、バーナー２８は、第３図に示す如く、外管２８
ｇとこれよりも僅に内側に入った内管２８ｂとからなる
２重構造を有している。内管２８ｂからはＨ２と０□の
混合ガスが噴出して酸水素炎３０を形成し、この酸水素
炎３０により？−ル２９を形成するようになっている。Here, the burner 28 has an outer tube 28 as shown in FIG.
It has a double structure consisting of an inner tube 28b and an inner tube 28b slightly inside the inner tube 28b. A mixed gas of H2 and 0□ blows out from the inner tube 28b to form an oxyhydrogen flame 30, and due to this oxyhydrogen flame 30? 29.

外管２８ｈからは空気が噴出し、酸水素炎３０を囲むエ
アカーテン３１を形成している。而して、バーナー２８
によるゾール２９の形成は、窓１９を構成する可動カバ
ー３２でボンディング線１７の先端部を囲みながら、ワ
イヤボンディング部から噴上げる還元性ガス３３の雰囲
気内でエアカーテン３ノに包まれた酸水素炎３０によっ
て行われる。Air blows out from the outer tube 28h, forming an air curtain 31 surrounding the oxyhydrogen flame 30. Therefore, burner 28
The formation of the sol 29 is carried out by enclosing the tip of the bonding wire 17 with a movable cover 32 constituting the window 19, and using oxyhydrogen wrapped in an air curtain 3 in an atmosphere of reducing gas 33 spouted from the wire bonding part. This is done by flame 30.

次に、キャビ２す１８を降下して電極パッド２７上にゾ
ール２９の部分を介してざンディング線１７を熱圧着す
る。この時、ボール２９はボンディング線１７を押し出
す荷重に応じて第４図（Ａ）　（Ｂ）に示す如く、少な
くともボール２９の肉厚の０．５〜３μｍの厚さく３）
だけ電極パッド２７内に喰込んだ状態で押し潰されて偏
平した端部２９ＩＬとなって電極パッド２７と一体化す
る。Next, the cavity 2 18 is lowered and the sanding wire 17 is thermocompression bonded onto the electrode pad 27 via the sole 29 . At this time, the ball 29 has a thickness of at least 0.5 to 3 μm, which is the wall thickness of the ball 29, as shown in FIGS. 4(A) and 4(B) depending on the load pushing out the bonding wire 17.
The end portion 29IL is bitten into the electrode pad 27 and crushed to become a flattened end portion 29IL, which is integrated with the electrode pad 27.

この偏平した端部２９ｍの喰込み深さく３）は、例えば
電極パッド２７が厚さ１〜３μのＡｔ層で形成されてお
シ、ボンディング線１７が２５ｍφの銅線である場合、
８０〜１００ｇの荷重をボンディング線１７に加えると
２０〜５０μｍの範囲に設定することができる。The biting depth 3) of the flattened end 29m is, for example, when the electrode pad 27 is formed of an At layer with a thickness of 1 to 3μ and the bonding wire 17 is a copper wire with a diameter of 25m.
When a load of 80 to 100 g is applied to the bonding wire 17, the thickness can be set in the range of 20 to 50 μm.

次に、第２図（Ｂ）に示す如く、キャピラリ１８を引き
上げて窓１９の部分でバーナー２８によりボンディング
＃１１７を所定の長さに切断すると共に、電極パッド２
７に接続したボンディング線１７ａの端部及びキャピラ
リ１８側に残ったボンディング線１７ｂの端部にボール
２９ａ。Next, as shown in FIG. 2(B), the capillary 18 is pulled up and the burner 28 is used to cut the bonding #117 to a predetermined length at the window 19.
A ball 29a is attached to the end of the bonding wire 17a connected to the capillary 7 and the end of the bonding wire 17b remaining on the capillary 18 side.

２９ｂを夫々形成する。この学もボンディング線１７ｍ
、１７ｂは、還元性ガス３３で囲まれている。29b are formed respectively. This school also has a bonding line of 17m.
, 17b are surrounded by reducing gas 33.

次に、第２図（Ｃ）に示す如く、ボンディング線１７ｍ
を外部リード２ノ側に所定の角度で折曲してホーミング
してから、リードフレーム１１を次のボス）＆ンｒイン
グ部Ｊ４に供給する。Next, as shown in FIG. 2(C), the bonding line 17m
After bending the lead frame 11 toward the external lead 2 at a predetermined angle and homing it, the lead frame 11 is supplied to the next boss J4.

このとき搬送路１０内の雰囲気ガスの温度は、２００〜
３００℃に保たれている。At this time, the temperature of the atmospheric gas in the conveyance path 10 is 200~
It is kept at 300℃.

次に、第２図（Ｄ）に示す如く、リードフレーム１１が
ポストボンディング部１４の所定位置に設定されたとこ
ろで、これを約３００℃以上の温度で加熱しながら、押
圧具２０ｔｌ−窓２２から挿入降下し、ホーミングされ
たボンディング線Ｊ７ａの端部のボール２９ｇの部分を
外部リード２１に熱圧着する。このとき、メール２９ａ
には３００〜５００ｇの荷重を加えて外部リード２１に
ざ−ル２９ｈを２０〜５０μｍの深さまで喰込ませる。Next, as shown in FIG. 2(D), when the lead frame 11 is set at the predetermined position of the post bonding part 14, while heating it at a temperature of about 300° C. or higher, the pressing tool 20tl is pressed against the window 22. The ball 29g at the end of the bonding wire J7a that has been inserted and lowered and homed is bonded to the external lead 21 by thermocompression. At this time, mail 29a
A load of 300 to 500 g is applied to the external lead 21 to dig the hole 29h to a depth of 20 to 50 μm.

このボス）ｙＮンディング処理の際にも抑圧具２０は可
動カバー３２で囲まれてオリ、押圧具２０、ビール２９
！Ｌ及びｙンディング＃ｉｉＪ　７　ｍは、還元性ガス
３３で包まれている。このようにして銅または銅合金か
らなるリードフレーム１１に装着された半導体ペレット
１５に、銅または銅合金からなるボンディング線１７を
架設する。Even during the boss)yN loading process, the suppressing tool 20 is surrounded by a movable cover 32, and the pressing tool 20 and the beer 29 are surrounded by a movable cover 32.
! L and y-nding #iiJ 7 m are surrounded by reducing gas 33. A bonding wire 17 made of copper or a copper alloy is installed on the semiconductor pellet 15 mounted on the lead frame 11 made of copper or a copper alloy in this manner.

このようにしてボンディング線１７を架設した半導体素
子では、第５図に示す高温放置試験での不良品発生特性
線（４）から明らかなように２００℃の温度下で２００
時間放置しても不良品は全く発生しなかった。これに対
して従来の方法でボンディング線の架設をした半導体装
置では不良品発生特性線（Ｂ）から明らかなように、１
００時間放置後には不良品が２５％発生し、２００時間
後には５０％の不良品が発生した。As is clear from the defect occurrence characteristic line (4) in the high-temperature storage test shown in FIG.
No defective products were produced even after leaving the product for a long time. On the other hand, in semiconductor devices in which bonding lines are constructed using the conventional method, as is clear from the defective product occurrence characteristic line (B), 1
After 00 hours of standing, 25% of the products were defective, and after 200 hours, 50% of the products were defective.

また、本発明方法では、銅または銅合金からなるボンデ
ィング線１７を架設するので、引張り強度は１３〜１５
ｇであり金線の５〜９ｇに比べ２〜２．５倍向上させる
ことができる。In addition, in the method of the present invention, since the bonding wire 17 made of copper or copper alloy is constructed, the tensile strength is 13 to 15.
g, which is 2 to 2.5 times higher than the 5 to 9 g of gold wire.

また、本発明方法では、銅または銅合金からなるボンデ
ィング線１７を使用するので、その接合部ではアルミニ
ウムー金の化合物が発生する虞れはなく、ボンディング
時の温度を１５０〜４５０℃の高温域に設定することが
できる。その結果、ボンディング線１７と電極パッド２
７及び外部リード２ノとの接合を良好にして半導体素子
の電気特性を向上させることができる。Furthermore, since the method of the present invention uses the bonding wire 17 made of copper or copper alloy, there is no risk of aluminum-gold compounds being generated at the joint, and the temperature during bonding is limited to a high temperature range of 150 to 450°C. Can be set to . As a result, the bonding wire 17 and the electrode pad 2
It is possible to improve the electrical characteristics of the semiconductor element by improving the bonding between the semiconductor element 7 and the external lead 2.

また、銅または銅合金からなるボンディング線Ｊ７を使
用するので製造コストヲ低減させることができる。Furthermore, since the bonding wire J7 made of copper or copper alloy is used, manufacturing costs can be reduced.

なお、実施例では、ワイヤぎンディングとポストポンデ
ィ／ダの前に？ンｒイング線１７にボール２９を予め形
成しておく所謂メールツーボール方式のボンディング手
段を使用した場合について説明したが、本発明は、この
他にもボス）ｙ＆ンｒイング後のゲンｆイングｆａ１７
の切断をキャピラリ１８のエツジ部分で行う所謂ウェッ
ジ方式のボンディング手段を採用しても良いことは勿論
である。In addition, in the example, before wire binding and postpond/da? Although the case has been described in which a so-called mail-to-ball type bonding means is used in which a ball 29 is formed in advance on the connecting line 17, the present invention is also applicable to
Of course, a so-called wedge type bonding means in which the cutting is performed at the edge portion of the capillary 18 may be employed.

〔発明の効果」 以上説明した如く、本発明に係る半導体素子の組立方法
によれば、半導体ペレットに高い信頼性と高い強度の下
に、しかも安価にワイヤボンディングを施すことができ
るものである。[Effects of the Invention] As explained above, according to the method for assembling a semiconductor element according to the present invention, wire bonding can be performed on semiconductor pellets with high reliability and high strength at a low cost.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、本発明の実施例の概勤構成を示す説明図、第
２図囚乃至同図（Ｄ）は、本発明方法の主な工程を示す
説明図、第３図は、本発明方法で使用するバーナーの炎
の状態を示す説明図、第４図（４）（Ｂ）は、本発明方
法で接続されたゴンｒイング線の接続部を示す説明図、
第５図は、不良品発生率と時間との関係を示す特性図、
第６図は、従来方法でボンディング線を架設したリード
フレームの要部を示す斜視図である。 １０−゛°搬送路、１ノ・・・リードフレーム、１２・
・・ダイゴンｒイング部、ノ３・・・ワイヤボンディン
グ部、１４・・・ポストボンディング部、１５・・・半
導体ペレット、１６，１９．２２・・・窓、１７・・・
ピンｆイングＨ１ｔｓ・・・キャピラリ、２０・・・押
圧具、２ノ・・・外部リード、２３．ｚ４．ｚｓ・・・
ヒータ、　２６・・・半田層、　２７・・・電極・４′
ツ　ド、２８・・・バーナー、２９・・・ボール、３０
・・・酸水素炎、３１・・・エアカーテン、３２・・・
可動カバー、３３・・・還元性ガス。 第１図 （Ａ） ｚ４ （Ｃ） ２図 ＣＢ） （Ｄ） 第３図　　　　　第４図 第５図　　　　　（Ｂ） 時間　　（Ｔ）FIG. 1 is an explanatory diagram showing the general structure of an embodiment of the present invention, FIGS. An explanatory diagram showing the state of the flame of the burner used in the method, FIG.
Figure 5 is a characteristic diagram showing the relationship between defective product incidence and time;
FIG. 6 is a perspective view showing the main parts of a lead frame on which bonding wires are installed using a conventional method. 10-゛°conveyance path, 1-lead frame, 12-
... Digon ring part, No. 3... Wire bonding part, 14... Post bonding part, 15... Semiconductor pellet, 16, 19. 22... Window, 17...
Pin fing H1ts... Capillary, 20... Pressing tool, 2 No.... External lead, 23. z4. zs...
Heater, 26...Solder layer, 27...Electrode 4'
Tsudo, 28...burner, 29...ball, 30
...Oxyhydrogen flame, 31...Air curtain, 32...
Movable cover, 33... Reducing gas. Figure 1 (A) z4 (C) Figure 2 CB) (D) Figure 3 Figure 4 Figure 5 (B) Time (T)

Claims (1)

【特許請求の範囲】[Claims] 還元性ガスを満たした搬送路に結合してボンディング部
を設け、この搬送路を通過した銅若しくは銅合金からな
る半導体部材を固着する搬送部材と、銅若しくは銅合金
からなるボンディング線とを前記ボンディング部に供給
し、不活性ガス及び還元性ガスからなる群から選定され
るいずれか一方のガスを前記ボンディング部に供給し、
前記ボンディング線を還元性ガス雰囲気で加熱してボー
ルに変形し、前記還元性ガス雰囲気の前記搬送部材を所
定温度に加熱後、この搬送部材に固着する前記半導体部
材の所定領域に前記ボールを所定の荷重で押圧して該ボ
ールの肉厚の０．５〜３μｍが該所定領域に喰込むよう
に熱圧着しすることを特徴とする半導体素子の組立方法
。A bonding portion is provided coupled to a conveyance path filled with reducing gas, and a conveyance member that fixes a semiconductor member made of copper or copper alloy that has passed through this conveyance path and a bonding wire made of copper or copper alloy are bonded together. supplying one gas selected from the group consisting of an inert gas and a reducing gas to the bonding section;
The bonding wire is heated in a reducing gas atmosphere to transform it into a ball, and the conveying member in the reducing gas atmosphere is heated to a predetermined temperature, and then the ball is placed in a predetermined area of the semiconductor member fixed to the conveying member. 1. A method of assembling a semiconductor device, characterized in that thermocompression bonding is carried out by pressing with a load of 0.5 to 3 μm in thickness of the ball so that it bites into the predetermined region.
JP59219903A 1984-07-27 1984-10-19 Method for assembling semiconductor element Granted JPS6197938A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59219903A JPS6197938A (en) 1984-10-19 1984-10-19 Method for assembling semiconductor element
EP85109406A EP0169574B1 (en) 1984-07-27 1985-07-26 Apparatus for manufacturing semiconductor device
US06/759,273 US4732313A (en) 1984-07-27 1985-07-26 Apparatus and method for manufacturing semiconductor device
DE8585109406T DE3577371D1 (en) 1984-07-27 1985-07-26 APPARATUS FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT.
KR1019850005537A KR900000205B1 (en) 1984-10-19 1985-07-31 Method for assembling semiconductor element
CN85106110A CN85106110B (en) 1984-10-19 1985-08-13 Make device and the using method thereof of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59219903A JPS6197938A (en) 1984-10-19 1984-10-19 Method for assembling semiconductor element

Publications (2)

Publication Number Publication Date
JPS6197938A true JPS6197938A (en) 1986-05-16
JPH0367340B2 JPH0367340B2 (en) 1991-10-22

Family

ID=16742835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59219903A Granted JPS6197938A (en) 1984-07-27 1984-10-19 Method for assembling semiconductor element

Country Status (1)

Country Link
JP (1) JPS6197938A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52142485A (en) * 1976-05-21 1977-11-28 Mitsubishi Electric Corp Wire bonding device
JPS5713747A (en) * 1980-06-27 1982-01-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS58223339A (en) * 1982-06-22 1983-12-24 Toshiba Corp Wire bonding method of semiconductor pellet

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52142485A (en) * 1976-05-21 1977-11-28 Mitsubishi Electric Corp Wire bonding device
JPS5713747A (en) * 1980-06-27 1982-01-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS58223339A (en) * 1982-06-22 1983-12-24 Toshiba Corp Wire bonding method of semiconductor pellet

Also Published As

Publication number Publication date
JPH0367340B2 (en) 1991-10-22

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