JPH0354855B2 - - Google Patents

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Publication number
JPH0354855B2
JPH0354855B2 JP60095204A JP9520485A JPH0354855B2 JP H0354855 B2 JPH0354855 B2 JP H0354855B2 JP 60095204 A JP60095204 A JP 60095204A JP 9520485 A JP9520485 A JP 9520485A JP H0354855 B2 JPH0354855 B2 JP H0354855B2
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Japan
Prior art keywords
bonding
wire
bonding wire
semiconductor
ball
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Expired - Lifetime
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JP60095204A
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Japanese (ja)
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JPS61253825A (en
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Priority to JP60095204A priority Critical patent/JPS61253825A/en
Publication of JPS61253825A publication Critical patent/JPS61253825A/en
Publication of JPH0354855B2 publication Critical patent/JPH0354855B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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    • H01L2224/484—Connecting portions
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    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85043—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a flame torch, e.g. hydrogen torch
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    • H01L2224/85055—Composition of the atmosphere being oxidating
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
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    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2924/15747—Copper [Cu] as principal constituent

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体素子の組立方法に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a method for assembling a semiconductor device.

〔発明の技術的背景とその問題点〕 従来の半導体素子の組立方法では、第６図に示
す如く、リードフレーム１のマウント床に装着さ
れた半導体ペレツト２上の電極パツド３と外部リ
ード４との接続は、金線で作られたボンデイング
線５を架設することにより行われている。このよ
うにボンデイング線５に金線を採用するもので
は、次のような問題がある。[Technical background of the invention and its problems] In the conventional method for assembling semiconductor devices, as shown in FIG. The connection is made by installing a bonding wire 5 made of gold wire. In this way, the bonding wire 5 made of gold wire has the following problems.

高温でボンデイング線５の架設を行うと、
Al製の電極パツド３とボンデイング線５の接
合部に金とアルミニウムの化合物が生じる。こ
のため接合部で電気特性の劣化が生じる。 When the bonding wire 5 is installed at high temperature,
A compound of gold and aluminum is generated at the joint between the electrode pad 3 made of Al and the bonding wire 5. This causes deterioration of electrical characteristics at the joint.

金線からなるボンデイング線５自身に酸化が
起きない場合であつても、接合部の電気特性の
劣化によつて半導体素子の信頼性が低下する。 Even if the bonding wire 5 itself made of gold wire is not oxidized, the reliability of the semiconductor device is reduced due to the deterioration of the electrical characteristics of the bonding portion.

金とアルミニウムの化合物はボンデイング処
理後の放置された状態下でも発生するため、電
気特性の安定した半導体素子が得られない。 Since a compound of gold and aluminum is generated even when the bonding process is left unattended, a semiconductor element with stable electrical characteristics cannot be obtained.

金線は高価であるため、製造価格が高くな
る。 Since gold wire is expensive, manufacturing costs are high.

このような問題を解消するために特願昭55−
88318号公報にて被ボンデイング領域を選択的に
活性化することにより、銅線からなるボンデイン
グ線と銅製のリードフレーム間でボンデイング線
の架設を行う技術が開示されている。しかしなが
ら、この技術ではボンデイング線の方に発生する
酸化物によつて接合不良が発生すると共に、ボン
デイング線の先端部に所定のボールを形成するの
が難しいため、接合不良を招く問題がある。更
に、各々のボンデイング処理毎に被ボンデイング
領域の活性化を行うため、作業性が悪い。 In order to solve this problem, a special patent application was filed in 1983.
Japanese Patent No. 88318 discloses a technique for constructing a bonding wire between a copper wire and a copper lead frame by selectively activating a region to be bonded. However, this technique has problems in that bonding defects occur due to oxides generated on the bonding wire, and that it is difficult to form a predetermined ball at the tip of the bonding wire, resulting in bonding defects. Furthermore, since the bonding target region is activated for each bonding process, workability is poor.

また、特願昭57−51237号公報では、ボンデイ
ング線を導出するキヤピラリの先端部を還元雰囲
気に保たれたカバー内に導入して、所望形状のボ
ールを形成すると共にボンデイング線の酸化防止
をしてボンデイング処理を行う技術が開示されて
いる。しかしながら、この技術では還元雰囲気を
保つためのカバーを含んだ複雑な機構が必要とな
り、１秒以下の処理速度で行われるボンデイング
処理の下では、故障が起き易すく保守管理に手間
を要する問題がある。また、外部リードが形成さ
れたリードフレーム側の酸化物を除去できないた
め、銅線からなるボンデイング線と銅製のリード
フレームとの間では信頼性の高いボンデイング処
理を行うことができない問題がある。 Furthermore, in Japanese Patent Application No. 57-51237, the tip of a capillary leading out the bonding wire is introduced into a cover kept in a reducing atmosphere to form a ball of a desired shape and to prevent the bonding wire from oxidizing. A technique for performing a bonding process is disclosed. However, this technology requires a complicated mechanism including a cover to maintain a reducing atmosphere, and when bonding is performed at a processing speed of less than 1 second, it is prone to breakdowns and requires time-consuming maintenance. be. Furthermore, since the oxide on the lead frame side where the external leads are formed cannot be removed, there is a problem in that highly reliable bonding cannot be performed between a bonding wire made of copper wire and a lead frame made of copper.

〔発明の目的〕[Purpose of the invention]

本発明は、半導体ペレツトに高い信頼性と高い
強度の下に、しかも安価にワイヤボンデイングを
施すことができる半導体素子の組立方法を提供す
ることをその目的とするものである。 SUMMARY OF THE INVENTION An object of the present invention is to provide a method for assembling a semiconductor element, which enables wire bonding to semiconductor pellets with high reliability and high strength, and at low cost.

〔発明の概要〕[Summary of the invention]

本発明は、リードフレームの搬送路、ボンデイ
ング処理を行うボンデイング処理部及びボンデイ
ング線を導出するキヤピラリの周辺領域を常に十
分な還元雰囲気に保つと共に、内側がH2：O2＝
２：１の混合ガスで外側がO2：N2＝20〜100％：
80〜０％の混合ガスからなる酸水素炎でボンデイ
ング線の先端部を加熱してボールを形成し、この
ボールを還元性ガス雰囲気中で半導体部材の所定
領域に熱圧着することにより、半導体ペレツトに
高い信頼性と高い強度の下に、しかも安価にワイ
ヤボンデイングを施すことができる半導体素子の
組立方法である。 The present invention always maintains a sufficient reducing atmosphere in the lead frame conveyance path, the bonding processing section that performs the bonding process, and the peripheral area of the capillary that leads out the bonding wire, and at the same time maintains a sufficient reducing atmosphere inside the H 2 :O 2 =
2:1 mixed gas with O 2 :N 2 = 20-100% on the outside:
The tip of the bonding wire is heated with an oxyhydrogen flame consisting of 80% to 0% mixed gas to form a ball, and this ball is thermocompression bonded to a predetermined area of the semiconductor member in a reducing gas atmosphere to form semiconductor pellets. This is a method for assembling semiconductor devices that allows wire bonding to be performed at low cost with high reliability and high strength.

なお、本発明者等は、上述の問題点を解消する
発明として既に特願昭59−219902号及び特願昭59
−219903号の出願をした。特願昭59−219902号の
発明は、要約すると半導体部材及びボンデイング
線を銅若しくは銅合金で形成し、これらを還元性
ガスを満した搬送路から不活性ガスまたは還元性
ガス雰囲気のボンデイング部に供給して、同雰囲
気中で加熱によつてボンデイング線に形成したボ
ールを少なくとも、半導体部材に熱圧着する工程
を具備する第１の発明と、所謂半導体ペレツト側
の電極パツドとボンデイング線とを第１の発明と
同様の条件下でボンデイング処理する第１ボンデ
イング部と、このボンデイング処理によつて電極
パツドに熱圧着されたボンデイング線の他端部側
を第１の発明と同様の条件下で所謂ポスト側と称
せられる外部リードに熱圧着する第２ボンデイン
グ部とを設けて半導体ペレツト側及びポスト側の
双方で所定の材質及び所定の雰囲気下で確実にボ
ンデイング処理する工程を具備する第２の発明か
らなるものである。 The present inventors have already published Japanese Patent Application No. 59-219902 and Japanese Patent Application No.
-I filed an application for No. 219903. In summary, the invention of Japanese Patent Application No. 59-219902 consists of forming semiconductor members and bonding wires from copper or copper alloy, and transporting them from a conveying path filled with a reducing gas to a bonding section in an inert gas or reducing gas atmosphere. A first aspect of the present invention comprises at least a step of thermocompression bonding a ball which is supplied and formed into a bonding line by heating in the same atmosphere to a semiconductor member, and a second aspect of the present invention which includes a step of thermocompression bonding a ball formed into a bonding wire by heating in the same atmosphere, and a second aspect of the present invention which includes the step of bonding a so-called semiconductor pellet side electrode pad and a bonding wire to a semiconductor member. The first bonding part is bonded under the same conditions as the first invention, and the other end side of the bonding wire thermocompressed to the electrode pad by this bonding process is subjected to the so-called so-called first bonding part under the same conditions as the first invention. A second invention comprising a step of providing a second bonding part that is thermocompression bonded to an external lead called a post side, and performing a bonding process reliably using a predetermined material and under a predetermined atmosphere on both the semiconductor pellet side and the post side. It consists of

また、特願昭59−219903号の発明は、要約する
と前号の第１の発明と同様の条件下で、かつ、半
導体部材の所定領域へのボンデイング線の接続を
少なくともボールの肉厚の0.5〜3μｍが喰込むよ
うにして行う工程を具備する発明である。 In addition, the invention of Japanese Patent Application No. 59-219903 can be summarized as follows: under the same conditions as the first invention of the previous issue, the connection of the bonding line to a predetermined area of the semiconductor member is at least 0.5 of the thickness of the ball. This invention includes a step of cutting in by ~3 μm.

これらの発明に対し本願発明は、ボンデイング
線の先端部に形成するボールを内側がH2：O2＝
２：１の混合ガスで外側がO2：N2＝20〜100％：
80〜０％の混合ガスからなる酸水素炎で形成する
ようにしたことを重要な構成とするものである。 In contrast to these inventions, the present invention has a ball formed at the tip of the bonding wire whose inner side is H 2 :O 2 =
2:1 mixed gas with O 2 :N 2 = 20-100% on the outside:
An important feature is that it is formed using an oxyhydrogen flame consisting of 80 to 0% mixed gas.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例について図面を参照して
説明する。第１図は、本発明方法をリードフレー
ムの移動順路に従つて示す説明図である。図中１
０は、リードフレーム１１を搬送する搬送路であ
る。搬送路１０内には例えばガス源からN2と
H210％のような還元性のガスが連続的に供給さ
れ、十分に還元性の雰囲気に保たれている。搬送
路１０内には、ダイボンデイング部１２、ワイヤ
ボンデイング部１３、ポストボンデイング部１
４、ポストベーキング部３７が所定の間隔を設け
て配置されている。ダイボンデイング部の搬送路
１０の天井部には、半導体ペレツト１５をダイボ
ンデイング部１２に供給するコレツト等の把持具
が出入する窓１６が開口している。ワイヤボンデ
イング部１３の搬送路１０の天井部には、ボンデ
イング線１７を供給するキヤピラリ１８をボンデ
イング部１２内に出入させるための窓１９が開口
されている。ポストボンデイング部１４の搬送路
１０の天井部には、ボンデイング線１７をリード
フレーム１２の外部リード２１側に熱圧着させる
ための押圧具２０が出入する窓２２が開口されて
いる。また、搬送路１０の床部には、ガイドレー
ル等からなる搬送手段が設けられている。ダイボ
ンデイング部１２、ワイヤボンデイング部１３、
ポストボンデイング部１４、ポストベーキング部
３７の床部には、リードフレーム１１を所定温度
に加熱するためのヒータ２３，２４，２５，３４
が内蔵され、更にN2＋H210％のガスが供給され
る構造になつている。また、ボンデイング部１３
につづく搬送路１０の天井部３８、ポストボンデ
イング部１４につづく搬送路１０の天井部４０及
びポストベーキング部３７の天井部４０から搬送
路１０内にN2＋H210％のガスが供給されるよう
になつている。 Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory diagram showing the method of the present invention according to the moving route of a lead frame. 1 in the diagram
0 is a conveyance path for conveying the lead frame 11. In the conveyance path 10, for example, N 2 is supplied from a gas source.
A reducing gas such as H 2 10% is continuously supplied to maintain a sufficiently reducing atmosphere. Inside the conveyance path 10, there are a die bonding section 12, a wire bonding section 13, and a post bonding section 1.
4. Post-baking parts 37 are arranged at predetermined intervals. A window 16 is opened in the ceiling of the conveyance path 10 of the die bonding section through which a gripping tool such as a collet for supplying semiconductor pellets 15 to the die bonding section 12 enters and exits. A window 19 is opened in the ceiling of the conveyance path 10 of the wire bonding section 13 for allowing a capillary 18 for supplying the bonding wire 17 to enter and exit the bonding section 12. A window 22 is opened in the ceiling of the conveyance path 10 of the post bonding section 14 through which a pressing tool 20 for thermocompression bonding the bonding wire 17 to the external lead 21 side of the lead frame 12 enters and exits. Furthermore, a conveyance means such as a guide rail is provided on the floor of the conveyance path 10. die bonding section 12, wire bonding section 13,
Heaters 23, 24, 25, 34 for heating the lead frame 11 to a predetermined temperature are provided on the floor of the post bonding section 14 and the post baking section 37.
It has a built-in structure and is further supplied with 10% N 2 + H 2 gas. In addition, the bonding part 13
10% N 2 +H 2 gas is supplied into the transport path 10 from the ceiling 38 of the transport path 10 following the post-bonding section 14, the ceiling 40 of the transport path 10 following the post-bonding section 14, and the ceiling 40 of the post-baking section 37. It's becoming like that.

このような搬送路１０を使用して次のように半
導体素子の組立を行う。先ず、リードフレーム１
１を搬送手段によりダイボンデイング部１２に供
給する。リードフレーム１１は、無酸素銅、リン
脱酸銅等の銅または銅合金で形成されている。ダ
イボンデイング部１２に供給されたリードフレー
ム１１は、ヒータ２３で所定温度に加熱される。
この状態で窓１６から半導体ペレツト１５が供給
され、リードフレーム１１のマウント部に半田層
２６を介して半導体ペレツト１５が装着される。 Using such a transport path 10, semiconductor devices are assembled as follows. First, lead frame 1
1 is supplied to the die bonding section 12 by a conveying means. The lead frame 11 is made of copper or a copper alloy, such as oxygen-free copper or phosphorus-deoxidized copper. The lead frame 11 supplied to the die bonding section 12 is heated to a predetermined temperature by the heater 23.
In this state, the semiconductor pellet 15 is supplied through the window 16, and is mounted on the mount portion of the lead frame 11 via the solder layer 26.

次に、第２図Ａに示す如く、半導体ペレツト１
５が装着されたリードフレーム１１は、ワイヤボ
ンデイング部１３に供給される。ワイヤボンデイ
ング部１３の所定位置に設定されると、リードフ
レーム１１はヒータ２４によつて約300℃に加熱
され、半導体ペレツト１５上の電極も所定温度に
加熱される。次いで窓１９の入口部までキヤピラ
リ１８が降下し窓１９の近傍に設けられたバーナ
２８によりキヤピラリ１８の先端部から導出した
ボンデイング線１７の先端部分にボール２９を形
成する。ボンデイング線１７は無酸素銅、リン脱
酸銅、CU−20％AU等の銅または銅合金で形成
されている。ここでバーナー２８は第３図に示す
如く外管２８ａとこれよりも僅に内側に入つた内
管２８ｂとからなる２重構造を有している。内管
２８ｂからはH2とO2を２：１にした混合ガスを
噴出して酸水素炎３０を形成し、この酸水素炎３
０によりボールを形成するようになつている。外
管２８ａからはO2＋N2が噴出し酸水素炎３０を
囲むエアーカーテン３１を形成している。バーナ
ー２８によるボール２９の形成は窓１９を構成す
るカバー３２，３２′でボンデイング線１７の先
端部を囲みながらヒーターブロツク２４から
H2：N2（５％〜20％）：（95％〜80％）の混合ガ
スからなる還元性ガス３３を出しワイヤボンデイ
ング部１３を還元雰囲気としている。バーナー２
８の外管からのO2とN2の混合ガスにしているの
は、ワイヤボンデイング部１３が還元性雰囲気の
ためバーナー内管からの酸水素炎３０が消えてし
まうのを防止するためである。しかしO2が多す
ぎるとボンデイング部１３の還元性雰囲気が十分
でなくなり、適正条件は、O2：N2は（20％〜100
％）：（80％〜０％）の範囲である。還元性ガスも
還元力を上げるには、H2を増せばよいが20％以
上にすると爆発の危険性があり５％以下では還元
力が低下する。このためH2：N2のガス適正混合
比は（５％〜20％）：（95％〜80％）とした。更に
還元性を良くするため第２図Ｆの如くヒーターブ
ロツク２４，２５，３４のワイヤボンデイング部
１３及びポスト部に近接する部分にガス噴出し口
３６，３６′を設けるのが好ましい。次にキヤピ
ラリー１８を降下して電極パツド２７上にボール
２９の部分を介してボンデイング線１７を熱圧着
する。この時、本発明の効果を更に高めるために
ボール２９はボンデイング線１７を押し出す荷重
に応じて第４図Ａ，Ｂに示す如く少なくともボー
ル２９の肉厚の0.5〜3μｍの厚（Ｘ）さ分だけ電
極パツド２７内に喰込んだ状態で押し漬されて扁
平した端部２９ａとなつて電極パツド２７と一体
化させるのが好ましい。この扁平した端部２９の
喰込み深さ（Ｘ）は例えば、電極パツド２７が１
〜3μ厚さのAl層で形成されており、ボンデイン
グ線１７が25μｍφの銅線である場合50〜100ｇ
の荷重をボンデイング線１７に加えると、0.5〜
2.5μｍの範囲に設定することが出来る。次に第２
図Ｂに示す如くキヤピラリ１８を引き上げて窓１
９の部分でバーナー２８によりボンデイング線１
７を所定の長さに切断すると共に電極パツド２７
に接続したボンデイング線１７ａの端部及びキヤ
ピラリ１８側に残つたボンデイング線１７ｂの端
部前述の酸水素炎３０によりボール２９ａ，２９
ｂを夫々形成する。この時もボンデイング線１７
ａ，１７ｂは還元性ガス３３で囲まれている。次
に第２図Ｃに示す如くボンデイング線１７ａを外
部リード２１側に所定の角度で折曲してホーミン
グしてから、リードフレーム１１を次のポストボ
ンデイング部１４に供給する。この時搬送路１０
内の還元雰囲気ガスの温度は200〜300℃に保たれ
てボンデイング線１７ａ、ボール２９ａを還元す
る。次に第２図Ｄに示す如くリードフレーム１１
がポストボンデイング部１４の所定位置に設定さ
れたところでこれを約300℃以上の温度で加熱し
ながら押圧具２０を窓２２から挿入降下し、ホー
ミングされたボンデイング線１７ａの端部のボー
ル２９ａの部分を、銅又は銅合金からなる外部リ
ード２１に熱圧着する。このとき例えばボンデイ
ング線１７が銅ワイヤ25μｍφの時300〜500grの
荷重を加えて外部リード２１にボール２９ａを20
〜50μｍの深さまで喰込ませるのが好ましい。こ
のポストボンデイング処理の際にも押圧具２０、
ボール２９ａ及びボンデイング線１７ａは還元性
ガス３３で包まれている。次に第２図Ｅに示す如
く、電極パツド２７、外部リード２１にボンデイ
ングの完了したリードフレーム１１をポストベー
キング部３７のゾーンを通過させ、電極パツド２
７に片側を接続したボンデイング線１７ａのボー
ル２９ａを外部リード２１に熱圧着する。この
時、ポストベーキング部３４の床部にはリードフ
レーム１１を300℃以上に加熱するヒータが設け
られ、還元性ガスの噴出口３９′も天井部に設け
られている。このようにして銅または銅合金から
なるリードフレーム１１に装着された半導体プレ
ツト１５に銅または銅合金からなるボンデイング
線１７を架設する。 Next, as shown in FIG. 2A, the semiconductor pellet 1
The lead frame 11 to which the lead frame 5 is attached is supplied to the wire bonding section 13. When set at a predetermined position in the wire bonding section 13, the lead frame 11 is heated to about 300 DEG C. by the heater 24, and the electrodes on the semiconductor pellet 15 are also heated to a predetermined temperature. The capillary 18 then descends to the entrance of the window 19, and a burner 28 provided near the window 19 forms a ball 29 at the tip of the bonding wire 17 led out from the tip of the capillary 18. The bonding wire 17 is made of oxygen-free copper, phosphorus-deoxidized copper, copper or copper alloy such as CU-20%AU. As shown in FIG. 3, the burner 28 has a double structure consisting of an outer tube 28a and an inner tube 28b slightly inside the outer tube 28a. A mixed gas containing H 2 and O 2 at a ratio of 2:1 is ejected from the inner tube 28b to form an oxyhydrogen flame 30.
0 to form a ball. O 2 +N 2 is ejected from the outer tube 28a to form an air curtain 31 surrounding the oxyhydrogen flame 30. The ball 29 is formed by the burner 28 from the heater block 24 while surrounding the tip of the bonding wire 17 with the covers 32 and 32' that constitute the window 19.
A reducing gas 33 consisting of a mixed gas of H2: N2 (5% to 20%):(95% to 80%) is emitted to create a reducing atmosphere in the wire bonding section 13. burner 2
The reason for using a mixed gas of O 2 and N 2 from the outer tube of No. 8 is to prevent the oxyhydrogen flame 30 from disappearing from the burner inner tube because the wire bonding part 13 is in a reducing atmosphere. . However, if there is too much O 2 , the reducing atmosphere in the bonding section 13 will not be sufficient.
%): ranges from 80% to 0%. In order to increase the reducing power of reducing gases, it is possible to increase the amount of H2 , but if it exceeds 20%, there is a risk of explosion, and if it is below 5%, the reducing power decreases. For this reason, the appropriate gas mixture ratio of H 2 :N 2 was set to (5% to 20%):(95% to 80%). In order to further improve the reducing property, it is preferable to provide gas outlets 36, 36' in the portions of the heater blocks 24, 25, 34 close to the wire bonding portions 13 and post portions, as shown in FIG. 2F. Next, the capillary 18 is lowered and the bonding wire 17 is thermocompression bonded onto the electrode pad 27 via the ball 29 portion. At this time, in order to further enhance the effect of the present invention, the ball 29 has a thickness (X) of at least 0.5 to 3 μm of the wall thickness of the ball 29, as shown in FIGS. It is preferable that the end portion 29a be pushed into the electrode pad 27 so as to form a flattened end portion 29a and integrated with the electrode pad 27. The biting depth (X) of this flattened end portion 29 is, for example, 1.
It is formed of an Al layer with a thickness of ~3μ, and if the bonding wire 17 is a copper wire with a diameter of 25μm, it weighs 50~100g.
When a load of 0.5~ is applied to the bonding wire 17,
It can be set within the range of 2.5 μm. Then the second
As shown in Figure B, pull up the capillary 18 and open the window 1.
Bonding wire 1 is bonded by burner 28 at part 9.
7 to a predetermined length and the electrode pad 27
The end of the bonding wire 17a connected to the capillary 18 and the end of the bonding wire 17b remaining on the capillary 18 side are exposed to the balls 29a, 29 by the aforementioned oxyhydrogen flame 30.
b respectively. At this time also bonding wire 17
a and 17b are surrounded by reducing gas 33. Next, as shown in FIG. 2C, the bonding wire 17a is bent at a predetermined angle toward the external lead 21 for homing, and then the lead frame 11 is supplied to the next post bonding section 14. At this time, the conveyance path 10
The temperature of the reducing atmosphere gas inside is maintained at 200 to 300°C to reduce the bonding wire 17a and the ball 29a. Next, as shown in FIG. 2D, the lead frame 11
is set at a predetermined position in the post bonding part 14, the pressing tool 20 is inserted and lowered through the window 22 while heating it at a temperature of about 300° C. or higher, and the ball 29a at the end of the homed bonding wire 17a is removed. is thermocompression bonded to an external lead 21 made of copper or copper alloy. At this time, for example, when the bonding wire 17 is a copper wire with a diameter of 25 μm, a load of 300 to 500 gr is applied to attach the ball 29a to the external lead 21.
It is preferable to dig it in to a depth of ~50 μm. Also during this post bonding process, the pressing tool 20,
Ball 29a and bonding wire 17a are surrounded by reducing gas 33. Next, as shown in FIG.
The ball 29a of the bonding wire 17a, which has one end connected to the wire 7, is thermocompression bonded to the external lead 21. At this time, a heater for heating the lead frame 11 to 300° C. or more is provided on the floor of the post-baking section 34, and a reducing gas outlet 39' is also provided on the ceiling. In this way, the bonding wire 17 made of copper or copper alloy is installed on the semiconductor plate 15 mounted on the lead frame 11 made of copper or copper alloy.

このようにして電極パツド２７と外部リード２
１間にボンデイング線１７を架設した半導体装置
について高温放置試験を行つたところ、200時間
経過した時点でも不良品の発生率はほとんど零で
あり、従来の方法によるものに比べて遥かに優れ
ていることが判つた。また、架設後のボンデイン
グの熱サイクル試験及び機械的強度試験において
も、従来方法によるものに比べ実施例によるもの
は遥かに優れていることが判つた。 In this way, the electrode pad 27 and the external lead 2
When we conducted a high-temperature storage test on a semiconductor device with a bonding wire 17 installed between the bonding wires 17 and 17, we found that even after 200 hours, the incidence of defective products was almost zero, which is far superior to conventional methods. It turned out that. It was also found that the method according to the example was far superior to the conventional method in the thermal cycle test and mechanical strength test of bonding after erection.

このようなことから本発明方法によるものでは
更に次の効果を有する。 For this reason, the method of the present invention has the following effects.

熱サイクルや高温放置に対して極めて耐久性
の高い半導体装置を得ることができる。 It is possible to obtain a semiconductor device that has extremely high durability against thermal cycling and high-temperature storage.

銅又は銅合金からなるボンデイング線１７及
びリードフレーム１１を使用するので、材料コ
ストを安くし、且つ、歩留りの高い半導体装置
を安価に得ることができる。 Since the bonding wire 17 and lead frame 11 made of copper or copper alloy are used, the material cost can be reduced and a semiconductor device with a high yield can be obtained at low cost.

信頼性の高い、大電力用の樹脂封止型半導体
装置を容易に実現することができる。 A highly reliable, high-power resin-sealed semiconductor device can be easily realized.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、本発明方法にて使用する搬送路の概
略構成を示す説明図、第２図Ａ乃至同図Ｆは、本
発明方法を工程順に示す説明図、第３図は、本発
明方法で使用するバーナーの炎の状態を示す説明
図、第４図Ａ，Ｂは、本発明方法で接続されたボ
ンデイング線の接続部を示す説明図、第５図は、
従来方法でボンデイング線を架設したリードフレ
ームの要部の斜視図である。 １０…搬送路、１１…リードフレーム、１２…
ダイボンデイング部、１３…ワイヤボンデイング
部、１４…ポストボンデイング部、１５…半導体
ペレツト、１６，１９，２２…窓、１７…ボンデ
イング線、１８…キヤピラリ、２０…押圧具、２
１…外部リード、２３，２４，２５，３４…ヒー
ターブロツク、２６…半田層、２７…電極パツ
ド、２８…バーナー、２９…ボール、３０…酸水
素炎、３１…カーテン、３２，３２′…カバー、
３３…還元性ガス、３６，３６′，３８，３８′，
３９，３９′…ガス噴出口、３７…ポストベーキ
ング部、３３，３３′…還元性ガス、４０…天井
部。 FIG. 1 is an explanatory diagram showing a schematic configuration of a conveyance path used in the method of the present invention, FIGS. 2A to 2F are explanatory diagrams showing the method of the present invention in order of steps, and FIG. 4A and 4B are explanatory diagrams showing the state of the flame of the burner used in the present invention, and FIG.
FIG. 2 is a perspective view of a main part of a lead frame on which bonding lines are installed using a conventional method. 10... Conveyance path, 11... Lead frame, 12...
Die bonding part, 13... Wire bonding part, 14... Post bonding part, 15... Semiconductor pellet, 16, 19, 22... Window, 17... Bonding wire, 18... Capillary, 20... Pressing tool, 2
1... External lead, 23, 24, 25, 34... Heater block, 26... Solder layer, 27... Electrode pad, 28... Burner, 29... Ball, 30... Oxygen hydrogen flame, 31... Curtain, 32, 32'... Cover ,
33...Reducing gas, 36, 36', 38, 38',
39, 39'... Gas outlet, 37... Post-baking part, 33, 33'... Reducing gas, 40... Ceiling part.

Claims (1)

【特許請求の範囲】 １ 還元性ガスを満たした搬送路に結合してボン
デイング部を設け、この搬送路を通過した銅若し
くは銅合金からなる半導体部材を固着する搬送部
材と、銅若しくは銅合金からなるボンデイング線
とを前記ボンデイング部に供給し、不活性ガス及
び還元性ガスからなる群から選定されるいずれか
一方のガスを前記ボンデイング部に供給し、還元
性ガス雰囲気中でH2：O2の比率が２：１の内側
の混合ガスとO2：N2の比率が20〜100％：80〜０
％の外側の混合ガスからなる酸水素炎による加熱
より、前記ボンデイング線の先端部にボールを形
成し、前記還元性ガス雰囲気の前記搬送部材を所
定温度に加熱後、この搬送部材の固着する前記半
導体部材の所定領域に前記ボールを熱圧着するこ
とを特徴とする半導体素子の組立方法。 ２ ボンデイング線の架設後、該ボンデイング線
と半導体素子及び半導体部材の所定領域との接続
部に200℃以上の還元性ガス中で熱処理を施す工
程を具備することを特徴とする特許請請求の範囲
第１項記載の半導体素子の組立方法。[Scope of Claims] 1. A conveyance member that is coupled to a conveyance path filled with reducing gas and has a bonding part, and that fixes a semiconductor member made of copper or copper alloy that has passed through this conveyance path; supplying a bonding line of The inner mixed gas with a ratio of 2:1 and the ratio of O 2 :N 2 is 20-100%: 80-0
A ball is formed at the tip of the bonding wire by heating with an oxyhydrogen flame consisting of a mixed gas outside of A method for assembling a semiconductor device, characterized in that the ball is thermocompression bonded to a predetermined region of a semiconductor member. 2. Claims characterized by comprising a step of heat-treating the connection portion between the bonding wire and a predetermined area of the semiconductor element and the semiconductor member in a reducing gas at 200°C or higher after the bonding wire is installed. A method for assembling a semiconductor device according to item 1.
JP60095204A 1985-05-02 1985-05-02 Semiconductor element assembling method Granted JPS61253825A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60095204A JPS61253825A (en) 1985-05-02 1985-05-02 Semiconductor element assembling method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60095204A JPS61253825A (en) 1985-05-02 1985-05-02 Semiconductor element assembling method

Publications (2)

Publication Number Publication Date
JPS61253825A JPS61253825A (en) 1986-11-11
JPH0354855B2 true JPH0354855B2 (en) 1991-08-21

Family

ID=14131217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60095204A Granted JPS61253825A (en) 1985-05-02 1985-05-02 Semiconductor element assembling method

Country Status (1)

Country Link
JP (1) JPS61253825A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5411553B2 (en) * 2009-03-31 2014-02-12 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Manufacturing method of semiconductor device
JP5411529B2 (en) * 2009-02-27 2014-02-12 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Manufacturing method of semiconductor device
JP2010258286A (en) * 2009-04-27 2010-11-11 Sanyo Electric Co Ltd Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS61253825A (en) 1986-11-11

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