JPH0367339B2 - - Google Patents

Info

Publication number
JPH0367339B2
JPH0367339B2 JP59219902A JP21990284A JPH0367339B2 JP H0367339 B2 JPH0367339 B2 JP H0367339B2 JP 59219902 A JP59219902 A JP 59219902A JP 21990284 A JP21990284 A JP 21990284A JP H0367339 B2 JPH0367339 B2 JP H0367339B2
Authority
JP
Japan
Prior art keywords
bonding
lead frame
wire
bonding wire
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59219902A
Other languages
Japanese (ja)
Other versions
JPS6197937A (en
Inventor
Mitsuo Kobayashi
Osamu Usuda
Yoshihiko Sano
Koichiro Atsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59219902A priority Critical patent/JPS6197937A/en
Priority to DE8585109406T priority patent/DE3577371D1/en
Priority to US06/759,273 priority patent/US4732313A/en
Priority to EP85109406A priority patent/EP0169574B1/en
Priority to KR1019850005537A priority patent/KR900000205B1/en
Priority to CN85106110A priority patent/CN85106110B/en
Publication of JPS6197937A publication Critical patent/JPS6197937A/en
Publication of JPH0367339B2 publication Critical patent/JPH0367339B2/ja
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳现な説明】 〔発明の技術分野〕 本発明は、半導䜓玠子の組立方法及びその装眮
に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method and apparatus for assembling a semiconductor device.

〔発明の技術的背景ずその問題点〕[Technical background of the invention and its problems]

埓来の半導䜓玠子の組立方法では、第図に瀺
す劂く、リヌドフレヌムのマりント床に装着さ
れた半導䜓ペレツト䞊の電極パツドず倖郚リ
ヌドずの接続は、金線で䜜られたボンデむング
線を架蚭するこずにより行われおいる。このよ
うにボンデむング線に金線を採甚するもので
は、次のような問題がある。 In the conventional semiconductor device assembly method, as shown in FIG. 6, the connection between the electrode pad 3 on the semiconductor pellet 2 mounted on the mounting floor of the lead frame 1 and the external lead 4 is made by bonding made of gold wire. This is done by constructing a line 5. In this way, the bonding wire 5 made of gold wire has the following problems.

高枩でボンデむング線の架蚭を行うず、
Al補の電極パツドずボンデむング線の接
合郚に金ずアルミニりムの化合物が生じる。こ
のため接合郚で電気特性の劣化が生じる。 When the bonding wire 5 is installed at high temperature,
A compound of gold and aluminum is generated at the joint between the electrode pad 3 made of Al and the bonding wire 5. This causes deterioration of electrical characteristics at the joint.

金線からなるボンデむング線自身に酞化が
起きない堎合であ぀おも、接合郚の電気特性の
劣化によ぀お半導䜓玠子の信頌性が䜎䞋する。 Even if the bonding wire 5 itself made of gold wire is not oxidized, the reliability of the semiconductor device is reduced due to the deterioration of the electrical characteristics of the bonding portion.

金ずアルミニりムの化合物はボンデむング凊
理埌の攟眮された状態䞋でも発生するため、電
気特性の安定した半導䜓玠子が埗られない。 Since a compound of gold and aluminum is generated even when the bonding process is left unattended, a semiconductor element with stable electrical characteristics cannot be obtained.

金線は高䟡であるため、補造䟡栌が高くな
る。 Since gold wire is expensive, manufacturing costs are high.

このような問題を解消するために特願昭55−
88318号公報にお被ボンデむング領域を遞択的に
掻性化するこずにより、銅線からなるボンデむン
グ線ず銅補のリヌドフレヌム間でボンデむング線
の架蚭を行う技術が開瀺されおいる。しかしなが
ら、この技術ではボンデむング線の方に発生する
酞化物によ぀お接合䞍良が発生するず共に、ボン
デむング線の先端郚に所定のボヌルを圢成するの
が難しいため、接合䞍良を招く問題がある。曎
に、各々のボンデむング凊理毎に被ボンデむング
領域の掻性化を行うため、䜜業性が悪い。 In order to solve this problem, a special patent application was filed in 1983.
Japanese Patent No. 88318 discloses a technique for constructing a bonding wire between a copper wire and a copper lead frame by selectively activating a region to be bonded. However, this technique has problems in that bonding defects occur due to oxides generated on the bonding wire, and that it is difficult to form a predetermined ball at the tip of the bonding wire, resulting in bonding defects. Furthermore, since the bonding target region is activated for each bonding process, workability is poor.

たた、特願昭57−51237号公報では、ボンデむ
ング線を導出するキダピラリの先端郚を還元雰囲
気に保たれたカバヌ内に導入しお、所望圢状のボ
ヌルを圢成するず共にボンデむング線の酞化防止
をしおボンデむング凊理を行う技術が開瀺されお
いる。しかしながら、この技術では還元雰囲気を
保぀ためのカバヌを含んだ耇雑な機構が必芁ずな
り、秒以䞋の凊理速床で行われるボンデむング
凊理の䞋では、故障が起き易すく保守管理に手間
を芁する問題がある。たた、倖郚リヌドが圢成さ
れたリヌドフレヌム偎の酞化物を陀去できないた
め、銅線からなるボンデむング線ず銅補のリヌド
フレヌムずの間では信頌性の高いボンデむング凊
理を行うこずができない問題がある。 Furthermore, in Japanese Patent Application No. 57-51237, the tip of a capillary leading out the bonding wire is introduced into a cover kept in a reducing atmosphere to form a ball of a desired shape and to prevent the bonding wire from oxidizing. A technique for performing a bonding process is disclosed. However, this technology requires a complicated mechanism including a cover to maintain a reducing atmosphere, and when bonding is performed at a processing speed of less than 1 second, it is prone to breakdowns and requires time-consuming maintenance. be. Furthermore, since the oxide on the lead frame side where the external leads are formed cannot be removed, there is a problem in that highly reliable bonding cannot be performed between a bonding wire made of copper wire and a lead frame made of copper.

〔発明の目的〕[Purpose of the invention]

本発明は、半導䜓ペレツトに高い信頌性ず高い
匷床の䞋に、しかも安䟡にワむダボンデむングを
斜すこずができる半導䜓玠子の組立方法及びその
装眮を提䟛するこずをその目的ずするものであ
る。 SUMMARY OF THE INVENTION An object of the present invention is to provide a method and apparatus for assembling semiconductor elements, which can perform wire bonding on semiconductor pellets with high reliability, high strength, and at low cost.

〔発明の抂芁〕[Summary of the invention]

本発明は、リヌドフレヌムの搬送路、ボンデむ
ング凊理を行うボンデむング凊理郚及びボンデむ
ング線を導出するキダピラリの呚蟺領域を垞に十
分な還元雰囲気に保぀こずにより、半導䜓ペレツ
トに高い信頌性ず高い匷床の䞋に、しかも安䟡に
ワむダボンデむングを行うこずができる半導䜓玠
子の組立方法及びその装眮である。 The present invention provides semiconductor pellets with high reliability and high strength by always maintaining a sufficient reducing atmosphere in the lead frame conveyance path, the bonding processing section that performs the bonding process, and the surrounding area of the capillary that leads out the bonding wire. Moreover, the present invention provides a method and apparatus for assembling a semiconductor element, which allows wire bonding to be performed at low cost.

〔発明の実斜䟋〕[Embodiments of the invention]

以䞋、本発明の実斜䟋に぀いお図面を参照しお
説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第図は、本発明方法及びその装眮をリヌドフ
レヌムの移動順路に埓぀お瀺す説明図である。図
䞭は、リヌドフレヌムを搬送する搬送路
である。搬送路内には䟋えばガス源からN2
ずH210のような還元性のガスが連続的に䟛絊
され、十分に還元性の雰囲気に保たれる。搬送路
内には、ダむボンデむング郚、ワむダボ
ンデむング郚、ポストボンデむング郚が
所定の間隔を蚭けお配眮されおいる。ダむボンデ
むング郚の搬送路の倩井郚には、半導䜓ペレ
ツトをダむボンデむング郚に䟛絊するコ
レツト等の把持具が出入する窓が開口しおい
る。ワむダボンデむング郚の搬送路の倩
井郚には、ボンデむング線を䟛絊するキダピ
ラリをボンデむング郚内に出入させるた
めの窓が開口されおいる。ポストボンデむン
グ郚の搬送路の倩井郚は、ボンデむング
線をリヌドフレヌムの倖郚リヌド偎
に熱圧着させるための抌圧具が出入する窓
が開口されおいる。たた、搬送路の床郚に
は、ガむドレヌル等からなる搬送手段が蚭けられ
おいる。ダむボンデむング郚、ワむダボンデ
むング郚、ポストボンデむング郚の床郚に
は、リヌドフレヌムを所定枩床に加熱するた
めのヒヌタが内蔵されおいる。 FIG. 1 is an explanatory diagram showing the method and apparatus of the present invention according to the moving route of a lead frame. Reference numeral 10 in the figure is a conveyance path for conveying the lead frame 11. For example, N2 is supplied from a gas source into the conveyance path 10.
A reducing gas such as 10% and H 2 is continuously supplied to maintain a sufficiently reducing atmosphere. In the conveyance path 10, a die bonding section 12, a wire bonding section 13, and a post bonding section 14 are arranged at predetermined intervals. A window 16 is opened in the ceiling of the conveyance path 10 of the die bonding section through which a gripping tool such as a collet for supplying semiconductor pellets 15 to the die bonding section 12 enters and exits. A window 19 is opened in the ceiling of the conveyance path 10 of the wire bonding section 13 for allowing a capillary 18 for supplying the bonding wire 17 to enter and exit the bonding section 13. The ceiling of the conveyance path 10 of the post bonding section 14 is provided with a window 2 through which a pressing tool 20 for thermocompression bonding the bonding wire 17 to the external lead 21 side of the lead frame 11 enters and exits.
2 is open. Further, on the floor of the conveyance path 11, a conveyance means consisting of a guide rail or the like is provided. Heaters 23, 24, and 25 for heating the lead frame 11 to a predetermined temperature are built into the floor portions of the die bonding section 12, the wire bonding section, and the post bonding section 14.

而しお、先ず、リヌドフレヌムを搬送手段
によりダむボンデむング郚に䟛絊する。リヌ
ドフレヌムは、無酞玠銅、リン脱酞銅、Cu
−20Au等の銅たたは銅合金で圢成されおいる。
ダむボンデむング郚に䟛絊されたリヌドフレ
ヌムは、ヒヌタで所定枩床に加熱され
る。この状態で窓から半導䜓ペレツトが
䟛絊され、リヌドフレヌムのマりント郚に半
田局を介しお半導䜓ペレツトが装着され
る。 First, the lead frame 11 is supplied to the die bonding section 12 by the conveying means. The lead frame 11 is made of oxygen-free copper, phosphorus-deoxidized copper, Cu
-Made of copper or copper alloy such as 20% Au.
The lead frame 11 supplied to the die bonding section 12 is heated to a predetermined temperature by the heater 23. In this state, the semiconductor pellet 15 is supplied through the window 16, and is mounted on the mount portion of the lead frame 11 via the solder layer 26.

次に、第図に瀺す劂く、半導䜓ペレツト
が装着されたリヌドフレヌムは、ワむダボ
ンデむング郚に䟛絊される。ワむダボンデむ
ング郚の所定䜍眮に蚭定されるず、リヌドフ
レヌムはヒヌタによ぀お玄300℃に加熱
され、半導䜓ペレツト䞊の電極も所定枩床に
加熱される。次いで、窓の入口郚たでキダピ
ラリが降䞋し、窓の近傍に蚭けられたバ
ヌナヌによりキダピラリの先端郚から導
出したボンデむング線の先端郚分にボヌル
を圢成する。ボンデむング線は、無酞玠
銅、リン脱酞銅、Cu−20Au等の銅たたは銅合
金で圢成されおいる。ここで、バヌナヌは、
第図に瀺す劂く、倖管ずこれよりも僅に
内偎に入぀た内管ずからなる重構造を有
しおいる。内管からはH2ずO2の混合ガス
が噎出しお酞氎玠炎を圢成し、この酞氎玠炎
によりボヌルを圢成するようにな぀おい
る。倖管からは空気が噎出し、酞氎玠炎
を囲む゚アカヌテンを圢成しおいる。而し
お、バヌナヌによるボヌルの圢成は、窓
を構成する可動カバヌでボンデむング線
の先端郚を囲みながら、ワむダボンデむング
郚から噎䞊げる還元性ガスの雰囲気内で゚ア
カヌテンに包たれた酞氎玠炎によ぀お行
われる。 Next, as shown in FIG. 2A, the semiconductor pellet 1
The lead frame 11 to which the lead frame 5 is attached is supplied to the wire bonding section 13. When set at a predetermined position in the wire bonding section 13, the lead frame 11 is heated to about 300 DEG C. by the heater 24, and the electrodes on the semiconductor pellet 15 are also heated to a predetermined temperature. Next, the capillary 18 is lowered to the entrance of the window 19, and a burner 28 installed near the window 19 attaches the ball 2 to the tip of the bonding wire 17 led out from the tip of the capillary 18.
form 9. The bonding wire 17 is made of copper or copper alloy such as oxygen-free copper, phosphorus-deoxidized copper, Cu-20% Au, or the like. Here, the burner 28 is
As shown in FIG. 3, it has a double structure consisting of an outer tube 28a and an inner tube 28b slightly inside. A mixed gas of H 2 and O 2 is ejected from the inner tube 28b to form an oxyhydrogen flame 30, and the ball 29 is formed by this oxyhydrogen flame 30. Air blows out from the outer tube 28a, and an oxyhydrogen flame 3
An air curtain 31 surrounding 0 is formed. Thus, the formation of the ball 29 by the burner 28 is carried out by enclosing the tip of the bonding wire 17 with the movable cover 32 constituting the window 19, and applying it to the air curtain 31 in the atmosphere of the reducing gas 33 spouted from the wire bonding part. This is carried out by a wrapped oxyhydrogen flame 30.

次に、キダピラリを降䞋しお電極パツド
䞊にボヌルの郚分を介しおボンデむング線
を熱圧着する。この時、ボヌルはボンデ
むング線を抌し出す荷重に応じお第図に
瀺す劂く、少なくずもボヌルの肉厚の0.5〜
3Όの厚さだけ電極パツド内に食蟌んだ
状態で抌し挬されお扁平な圢状ずな぀お電極パツ
ドず䞀䜓化する。この扁平な端郚の喰蟌
み深さは、䟋えば電極パツドが厚さ〜
3ΌのAl局応で圢成されおおり、ボンデむング線
が25Όφの銅線である堎合、80〜100の
荷重をボンデむング線に加えるず0.5〜3Ό
の範囲に蚭定するこずができる。 Next, the capillary 18 is lowered to the electrode pad 2.
The bonding wire 17 is thermocompression bonded onto the ball 7 via the ball 29 portion. At this time, the ball 29 depends on the load pushing out the bonding wire 17, as shown in FIG.
It is pressed into the electrode pad 27 by a thickness x of 3 ÎŒm and is pressed into a flat shape to be integrated with the electrode pad 27. The biting depth x of the flat end portion 29 is, for example, such that the electrode pad 27 has a thickness of 1 to
If the bonding wire 17 is a copper wire with a diameter of 25 ÎŒm, if a load of 80 to 100 g is applied to the bonding wire 17, the thickness of the bonding wire 17 will be 0.5 to 3 ÎŒm.
It can be set to a range of .

次に、第図に瀺す劂く、キダピラリを
匕き䞊げお窓の郚分でバヌナヌによりボ
ンデむング線を所定の長さに切断するず共
に、電極パツドに接続したボンデむング線
の端郚及びキダピラリ偎に残぀たボンデ
むング線の端郚にボヌルを
倫々圢成する。この時もボンデむング線
は、還元性ガスで囲たれおいる。 Next, as shown in FIG. 2B, the capillary 18 is pulled up and the bonding wire 17 is cut to a predetermined length using the burner 28 at the window 19, and the bonding wire 17 connected to the electrode pad 27 is removed.
Balls 29a and 29b are formed at the end of bonding wire 7a and the end of bonding wire 17b remaining on the capillary 18 side, respectively. At this time as well, the bonding wire 17a,
17b is surrounded by reducing gas 33.

次に、第図に瀺す劂く、ボンデむング線
を倖郚リヌド偎に所定の角床で折曲しお
ホヌミングしおから、リヌドフレヌムを次の
ポストボンデむング郚に䟛絊する。このずき
搬送路内の雰囲気ガスの枩床は、200〜300℃
に保たれおいる。 Next, as shown in FIG. 2C, bonding wire 1
7a is bent at a predetermined angle toward the external lead 21 and homed, and then the lead frame 11 is supplied to the next post bonding section 14. At this time, the temperature of the atmospheric gas in the conveyance path 10 is 200 to 300°C.
is maintained.

次に、第図に瀺す劂く、リヌドフレヌム
がポストボンデむン郚の所定䜍眮に蚭定さ
れたずころで、これを玄300℃以䞊の枩床で加熱
しながら、抌圧具を窓から挿入降䞋し、
ホヌミングされたボンデむング線の端郚の
ボヌルを郚分を倖郚リヌドに熱圧着す
る。こずずき、ボヌルには300〜500の荷
重を加えお、第図に瀺す劂く、倖郚リヌド
にボヌルを20〜50Όの深さたで喰蟌た
れる。このポストボンデむング凊理の際にも抌圧
具は可動カバヌで囲たれおおり、抌圧具
、ボヌル及びボンデむング線
は、還元性ガスで包たれおいる。このように
しお銅たたは銅合金からなるリヌドフレヌム
に装着された半導䜓ペレツトに、銅たたは銅
合金からなるボンデむング線を架蚭する。 Next, as shown in FIG. 2D, the lead frame 1
1 is set at a predetermined position in the post bonding part 14, the pressing tool 20 is inserted and lowered through the window 22 while heating it at a temperature of about 300° C. or more,
A portion of the ball 29a at the end of the homed bonding wire 17a is bonded to the external lead 21 by thermocompression. At this time, a load of 300 to 500 g is applied to the ball 29a, and as shown in FIG. 4B, the external lead 2
1, the ball 29a is bitten to a depth of 20 to 50 ÎŒm. During this post bonding process, the pressing tool 20 is surrounded by a movable cover 32, and includes the pressing tool 20, the ball 29a, and the bonding line 17a.
is surrounded by reducing gas 33. In this way, the lead frame 11 made of copper or copper alloy
A bonding wire 17 made of copper or a copper alloy is installed on the semiconductor pellet 15 attached to the semiconductor pellet.

このようにしおボンデむング線を架蚭した
半導䜓玠子では、第図に瀺す高枩攟眮詊隓での
䞍良品発生特性線から明らかなように200℃の
枩床䞋で200時間攟眮しおも䞍良品は党く発生し
なか぀た。これに察しお埓来の方法でボンデむン
グ線の架蚭をした半導䜓玠子では䞍良品発生特性
線から明らかなように、100時間攟眮埌には䞍
良品が25発生し、200時間埌には50の䞍良品
が発生した。 In the semiconductor device in which the bonding wires 17 are installed in this way, no defective products occur even if the semiconductor device is left at a temperature of 200°C for 200 hours, as is clear from the defect occurrence characteristic line A in the high temperature storage test shown in FIG. It didn't happen at all. On the other hand, in semiconductor devices with bonding lines constructed using the conventional method, 25% of the products are defective after being left for 100 hours, and 50% of the products are defective after 200 hours, as is clear from the defective product occurrence characteristic line B. A good product was found.

たた、本発明方法では、銅たたは銅合金からな
るボンデむング線を架蚭するので、匕匵り匷
床は13〜15であり金線の〜に比べ〜
2.5倍向䞊させるこずができる。 In addition, in the method of the present invention, since the bonding wire 17 made of copper or copper alloy is constructed, the tensile strength is 13 to 15 g, which is 2 to 2 g compared to 5 to 9 g for gold wire.
It can be improved by 2.5 times.

たた、本発明方法では、銅たたは銅合金からな
るボンデむング線を䜿甚するので、電極パツ
ドずの接合郚においおアルミニりム−金の化
合物が発生する虞れはなく、ボンデむング時の枩
床を150〜450℃の高音域に蚭定するこずができ
る。その結果、ボンデむング線ず電極パツド
及び倖郚リヌドずの接合を良奜にしお半
導䜓玠子の電気特性を向䞊させるこずができる。 Furthermore, in the method of the present invention, since the bonding wire 17 made of copper or copper alloy is used, there is no possibility that an aluminum-gold compound will be generated at the joint with the electrode pad 27, and the temperature at the time of bonding is set at 150 to 450. Can be set in the treble range of °C. As a result, it is possible to improve the bonding between the bonding wire 17, the electrode pad 27, and the external lead 21, thereby improving the electrical characteristics of the semiconductor element.

たた、銅たたは銅合金からなるボンデむング線
を䜿甚するので補造コストを䜎枛させるこず
ができる。 Furthermore, since the bonding wire 17 made of copper or copper alloy is used, manufacturing costs can be reduced.

なお、実斜䟋では、ワむダボンデむングずポス
トボンデむングの前にボンデむング線にボヌ
ルを予め圢成しおおく所謂ボヌルツヌボヌル
方匏のボンデむング手段を䜿甚した堎合に぀いお
説明したが、本発明は、この他にもワむダボンデ
むング埌のボンデむング線の切断をキダピラ
リの゚ツゞ郚分で行う所謂り゚ツゞ方匏のボ
ンデむング手段を採甚しおも良いこずは勿論であ
る。 In addition, in the embodiment, a case has been described in which a so-called ball-to-ball type bonding means is used, in which a ball 29 is formed in advance on the bonding line 17 before wire bonding and post bonding, but the present invention is also applicable to other methods. It goes without saying that a so-called wedge type bonding means in which the bonding wire 17 is cut at the edge portion of the capillary 18 after wire bonding may be employed.

〔発明の効果〕〔Effect of the invention〕

以䞊説明した劂く、本発明に係る半導䜓玠子の
組立方法及びその装眮によれば、半導䜓ペレツト
に高い信頌性ず高い匷床の䞋に、しかも安䟡にワ
むダボンデむングを斜すこずができるものであ
る。 As described above, according to the method and apparatus for assembling a semiconductor element according to the present invention, wire bonding can be performed on semiconductor pellets with high reliability and high strength at a low cost.

【図面の簡単な説明】[Brief explanation of drawings]

第図は、本発明の実斜䟋の抂略構成を瀺す説
明図、第図乃至同図は、本発明方法及びそ
の装眮の䞻な工皋を瀺す説明図、第図は、本発
明方法及びその装眮で䜿甚するバヌナヌの炎の状
態を瀺す説明図、第図は、本発明方法及
びその装眮で接続されたボンデむング線の接続郚
を瀺す説明図、第図は、䞍良品発生率ず時間ず
の関係を瀺す特性図、第図は、埓来方法でボン
デむング線を架蚭したリヌドフレヌムの芁郚を瀺
す斜芖図である。   搬送路、  リヌドフレヌム、
  ダむボンデむング郚、  ワむダボン
デむング郚、  ポストボンデむング郚、
  半導䜓ペレツト、  
窓、  ボンデむング線、  キダピラ
リ、  抌圧具、  倖郚リヌド、
  ヒヌタ、  半田局、
  電極パツド、  バヌナヌ、  
ボヌル、  酞氎玠炎、  ゚アカヌテ
ン、  可動カバヌ、  還元性ガス。 FIG. 1 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention, FIGS. 2A to 2D are explanatory diagrams showing the main steps of the method and apparatus of the present invention, and FIG. 3 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention. FIGS. 4A and 4B are explanatory diagrams showing the state of the flame of the burner used in the method and the device; FIG. FIG. 6, which is a characteristic diagram showing the relationship between the defective product incidence rate and time, is a perspective view showing the main part of a lead frame in which a bonding line is installed using a conventional method. 10... Conveyance path, 11... Lead frame, 1
2...Die bonding part, 13...Wire bonding part, 14...Post bonding part, 1
5... Semiconductor pellets, 16, 19, 22...
Window, 17... Bonding wire, 18... Capillary, 20... Pressing tool, 21... External lead, 2
3, 24, 25...Heater, 26...Solder layer, 2
7... Electrode pad, 28... Burner, 29...
Ball, 30...Oxyhydrogen flame, 31...Air curtain, 32...Movable cover, 33...Reducing gas.

Claims (1)

【特蚱請求の範囲】  半導䜓ペレツト、銅若しくは銅合金補のリヌ
ドフレヌム、及び銅若しくは銅合金補のボンデむ
ング線を䜿甚しお半導䜓玠子を組立おる方法であ
぀お、 前蚘リヌドフレヌムに前蚘半導䜓ペレツトを接
着する為のダむボンデむング郚、前蚘半導䜓ペレ
ツトに前蚘ボンデむング線の䞀方の端郚を接着す
る為のワむダボンデむング郚、及び、前蚘リヌド
フレヌムに前蚘ボンデむング線の他方の端郚を接
着する為のポストボンデむング郚、を搬送路に沿
぀お䞀䜓的に順次圢成し、䞔぀前蚘搬送路党䜓を
還元性ガス雰囲気の抂ね閉鎖された空間ずしお圢
成し、前蚘搬送路に沿぀お前蚘リヌドフレヌムを
搬送する工皋ず、 前蚘ダむボンデむング郚においお、前蚘還元性
ガス雰囲気䞭で、前蚘リヌドフレヌムを加熱しな
がら前蚘リヌドフレヌム䞊に半田局を介しお前蚘
半導䜓ペレツトを接着する工皋ず、 前蚘ワむダボンデむング郚においお、前蚘ボン
デむング線の原材を䟛絊するず共に、前蚘還元性
ガス雰囲気䞭で、前蚘ボンデむング線の前蚘䞀方
の端郚を加熱しおボヌル状に倉圢する工皋ず、 前蚘ワむダボンデむング郚においお、前蚘還元
性ガス雰囲気䞭で、前蚘リヌドフレヌムを加熱し
ながら前蚘ボンデむング線の前蚘䞀方の端郚を前
蚘半導䜓ペレツトに察しお熱圧着する工皋ず、 前蚘ワむダボンデむング郚においお、前蚘還元
性ガス雰囲気䞭で、前蚘ボンデむング線の原材を
所定寞法に溶断し、前蚘ボンデむング線の前蚘他
方の端郚を埗る工皋ず、 前蚘ポストボンデむング郚においお、前蚘還元
性ガス雰囲気䞭で、前蚘リヌドフレヌムを加熱し
ながら前蚘ボンデむング線の前蚘他方の端郚を前
蚘リヌドフレヌムに察しお熱圧着する工皋ず、 を具備するこずを特城ずする半導䜓玠子の組立方
法。  半導䜓ペレツト、銅若しくは銅合金補のリヌ
ドフレヌム、及び銅若しくは銅合金補のボンデむ
ング線を䜿甚しお半導䜓玠子を組立おる装眮であ
぀お、 前蚘リヌドフレヌムを搬送する為の搬送手段を
有するず共に、党䜓が還元性ガス雰囲気の抂ね閉
鎖された空間を圢成する搬送路ず、 前蚘搬送路に沿぀お䞀䜓的に順次圢成された、
前蚘リヌドフレヌムに前蚘半導䜓ペレツトを接着
する為のダむボンデむング郚、前蚘半導䜓ペレツ
トに前蚘ボンデむング線の䞀方の端郚を接着する
為のワむダボンデむング郚、及び、前蚘リヌドフ
レヌムに前蚘ボンデむング線の他方の端郚を接着
する為のポストボンデむング郚ず、 前蚘リヌドフレヌムを加熱する為、前蚘ダむボ
ンデむング郚、ワむダボンデむング郚、及びポス
トボンデむング郚に配蚭されたヒヌタず、 前蚘リヌドフレヌム䞊に前蚘半導䜓ペレツトを
䟛絊する為、前蚘ダむボンデむング郚に配蚭され
たペレツト䟛絊郚材ず、 前蚘ボンデむング線を䟛絊するず共に、前蚘半
導䜓ペレツトに察しお前蚘ボンデむング線の前蚘
䞀方の端郚を抌圧する為、前蚘ワむダボンデむン
グ郚に配蚭された䞊䞋駆動型のキダピラリず、 前蚘ボンデむング線を溶断するず共に前蚘ボン
デむング線の端郚を加熱しおボヌル状に倉圢する
為、前蚘ワむダボンデむング郚に配蚭されたバヌ
ナヌず、 前蚘ボンデむング線の前蚘他方の端郚を前蚘リ
ヌドフレヌムに抌圧する為、前蚘ポストボンデむ
ング郚に配蚭された抌圧具ず、 を具備するこずを特城ずする半導䜓玠子の組立装
眮。[Scope of Claims] 1. A method for assembling a semiconductor element using a semiconductor pellet, a lead frame made of copper or a copper alloy, and a bonding wire made of copper or a copper alloy, the method comprising bonding the semiconductor pellet to the lead frame. a die bonding section for bonding one end of the bonding wire to the semiconductor pellet; and a post bonding section for bonding the other end of the bonding wire to the lead frame. , integrally and sequentially formed along a conveyance path, and forming the entire conveyance path as a generally closed space with a reducing gas atmosphere, and conveying the lead frame along the conveyance path; a step of bonding the semiconductor pellet onto the lead frame via a solder layer while heating the lead frame in the reducing gas atmosphere in the die bonding section; supplying a material and heating the one end of the bonding wire in the reducing gas atmosphere to deform it into a ball shape; bonding the one end of the bonding wire to the semiconductor pellet by thermocompression while heating the lead frame; and in the wire bonding section, the raw material of the bonding wire is heated to a predetermined value in the reducing gas atmosphere. fusing to size to obtain the other end of the bonding wire; and in the post bonding section, heating the lead frame in the reducing gas atmosphere while cutting the other end of the bonding wire. A method for assembling a semiconductor device, comprising the steps of thermocompression bonding to the lead frame. 2. An apparatus for assembling semiconductor elements using semiconductor pellets, a lead frame made of copper or a copper alloy, and a bonding wire made of copper or a copper alloy, which has a conveying means for conveying the lead frame, and also has a conveying means for conveying the lead frame, and a conveyance path forming a generally closed space with a reducing gas atmosphere; and integrally formed sequentially along the conveyance path.
a die bonding part for bonding the semiconductor pellet to the lead frame; a wire bonding part for bonding one end of the bonding wire to the semiconductor pellet; and the other end of the bonding wire to the lead frame. a post bonding section for bonding the lead frame; a heater disposed in the die bonding section, wire bonding section, and post bonding section for heating the lead frame; and supplying the semiconductor pellet onto the lead frame. In order to supply the bonding wire and press the one end of the bonding wire against the semiconductor pellet, a pellet supply member disposed in the die bonding section is provided. a vertically driven capillary disposed therein; a burner disposed in the wire bonding section for fusing the bonding wire and heating the end portion of the bonding wire to deform it into a ball shape; An apparatus for assembling a semiconductor device, comprising: a pressing tool disposed in the post bonding section for pressing the other end of the lead frame against the lead frame.
JP59219902A 1984-07-27 1984-10-19 Method for assembling semiconductor element Granted JPS6197937A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59219902A JPS6197937A (en) 1984-10-19 1984-10-19 Method for assembling semiconductor element
DE8585109406T DE3577371D1 (en) 1984-07-27 1985-07-26 APPARATUS FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT.
US06/759,273 US4732313A (en) 1984-07-27 1985-07-26 Apparatus and method for manufacturing semiconductor device
EP85109406A EP0169574B1 (en) 1984-07-27 1985-07-26 Apparatus for manufacturing semiconductor device
KR1019850005537A KR900000205B1 (en) 1984-10-19 1985-07-31 Method for assembling semiconductor element
CN85106110A CN85106110B (en) 1984-10-19 1985-08-13 Make device and the using method thereof of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59219902A JPS6197937A (en) 1984-10-19 1984-10-19 Method for assembling semiconductor element

Publications (2)

Publication Number Publication Date
JPS6197937A JPS6197937A (en) 1986-05-16
JPH0367339B2 true JPH0367339B2 (en) 1991-10-22

Family

ID=16742820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59219902A Granted JPS6197937A (en) 1984-07-27 1984-10-19 Method for assembling semiconductor element

Country Status (1)

Country Link
JP (1) JPS6197937A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63314837A (en) * 1987-06-18 1988-12-22 Mitsubishi Electric Corp Semiconductor manufacturing equipment
JP6810222B2 (en) * 2014-07-11 2021-01-06 ロヌム株匏䌚瀟 Electronic device
JP2016028417A (en) * 2014-07-11 2016-02-25 ロヌム株匏䌚瀟 Electronic device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52142485A (en) * 1976-05-21 1977-11-28 Mitsubishi Electric Corp Wire bonding device
JPS58223339A (en) * 1982-06-22 1983-12-24 Toshiba Corp Wire bonding method of semiconductor pellet

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52142485A (en) * 1976-05-21 1977-11-28 Mitsubishi Electric Corp Wire bonding device
JPS58223339A (en) * 1982-06-22 1983-12-24 Toshiba Corp Wire bonding method of semiconductor pellet

Also Published As

Publication number Publication date
JPS6197937A (en) 1986-05-16

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