JPH01251628A - Bonding equipment - Google Patents

Bonding equipment

Info

Publication number
JPH01251628A
JPH01251628A JP63076249A JP7624988A JPH01251628A JP H01251628 A JPH01251628 A JP H01251628A JP 63076249 A JP63076249 A JP 63076249A JP 7624988 A JP7624988 A JP 7624988A JP H01251628 A JPH01251628 A JP H01251628A
Authority
JP
Japan
Prior art keywords
bonding
capillary
ball
wire
thin metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63076249A
Other languages
Japanese (ja)
Inventor
Yoshio Shimizu
義男 清水
Masaharu Kotani
小谷　正治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63076249A priority Critical patent/JPH01251628A/en
Publication of JPH01251628A publication Critical patent/JPH01251628A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78308—Removable capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To stabilize bonding capillary temperature, by installing a heating means arranged in the vicinity of a bonding capillary capable of freely moving in the vertical direction. CONSTITUTION:A bonding arm 1 linked with a supersonic horn is provided with a gap formed by dividing the tip part, and a ball bonding is completed by inserting a metal thin wire 3 into the hole formed in a capillary 2 fixed between in the gap. A specified length of the metal thin wire 3 inserted and fixed into the capillary 2 is sent out in the vertical direction, by the operation of a clamper. A heating source is installed, which melts the metal thin wire 3 of a specified length sent out from the capillary 2, and forms a ball having accurate roundness. For this purpose, an electric torch system is adopted, and a specified gas atmosphere is maintained in the vicinity of ball formation, in the case where copper or copper alloy being easily oxidized is applied to the thin metal wire 3.

Description

【発明の詳細な説明】 （発明の目的） （産業上の利用分野） 本発明はボンディング装置に係わり、特にボンディング
雰囲気にとって必要な温度上昇に伴って発生するボンデ
ィング装置用金属部品の熱膨張による弊害をも除去する
ものである。[Detailed Description of the Invention] (Objective of the Invention) (Industrial Application Field) The present invention relates to a bonding device, and in particular, the adverse effects caused by thermal expansion of metal parts for the bonding device that occur with the rise in temperature necessary for the bonding atmosphere. It also removes.

（従来の技術） 半導体素子の製造は半導体基板に回路やデバイスを造込
む前処理工程とこの半導体基板を組立てる組立工程に大
別され、この後者は前者より早期に自動化が進められポ
ンディング装置もマニュアル装置からフルオートボンダ
ー（Ｆｕｌｌ　Ａｕｔ。(Conventional technology) The manufacturing of semiconductor elements is broadly divided into a pretreatment process in which circuits and devices are built on a semiconductor substrate, and an assembly process in which the semiconductor substrate is assembled. From manual equipment to fully automatic bonder (Full Out.

Ｂｏｎｄｅｒ）に切替えられてゴミの発生源である人間
は極端に少なくなり、しかもいわゆる多台持ちフルオー
トボンダーも使用されているのが現状でおる。The number of people who are the source of waste has decreased dramatically, and moreover, so-called fully automatic bonders with multiple units are now in use.

ご多分に漏れず価格競争の激しい半導体産業では歩留り
ならびに製造装置の稼動率の向上が厳しく要求されてお
り、従ってポンディング装置にあっても技術的問題の探
求が進められている。In the semiconductor industry, where price competition is intense as most people do, there are strict demands for improvements in yield and the operating rate of manufacturing equipment, and therefore technical problems are being investigated even in bonding equipment.

一方ポンディング装置に付属して設置するクランパから
ツールに供給される金属細線としては金細線が主流であ
ったが、経済的な観点からＡβ細線も機種によっては適
用されており、更に銅細線も開発の段階から実用化の域
に達している。On the other hand, thin metal wires that were supplied to tools from clampers attached to bonding equipment were mainly thin gold wires, but thin Aβ wires were also used depending on the model from an economical point of view, and thin copper wires were also used. It has reached the stage of practical application from the development stage.

この銅細線の適用の外には、リードフレームの表面付近
に銅もしくは銅合金を形成したものも採用される等のよ
うに価格競争に耐える技術を目積して鋭意開発が進めら
れているのが現状でおる。In addition to the application of thin copper wires, efforts are being made to develop technologies that can withstand price competition, such as those with copper or copper alloy formed near the surface of the lead frame. is the current situation.

ところで、銅細線は従来から使用されている金細線より
硬い性質を持っているので熱圧着工程では印加する圧力
は当然大きくせざるを得ず、その雰囲気にも注意を払わ
なければならない。と言うのはこの銅細線の溶融によっ
て形成されるボールの真円度を維持するためにも、酸化
性に富んだ特、性を持つ表面には酸化物の形成を極力抑
制し、しかもこの熱圧着工程中にも酸化の進行を抑制し
て熱圧着強度に相関関係があるボールの真円度を維持す
る必要がおるためである。By the way, since thin copper wires have properties that are harder than thin gold wires that have been used conventionally, the pressure applied in the thermocompression bonding process must naturally be increased, and care must also be taken in the atmosphere. This is because, in order to maintain the roundness of the ball formed by melting this thin copper wire, the formation of oxides on the surface, which has highly oxidizing properties, must be suppressed as much as possible. This is because it is necessary to suppress the progress of oxidation during the compression bonding process and maintain the roundness of the ball, which is correlated with the thermocompression bonding strength.

従ってこの銅細線による熱圧着工程を行うにはボンディ
ング装置装置ならびにその付近の雰囲気を一定の状態に
保持するように特別の配慮が払われている。Therefore, in performing this thermocompression bonding process using thin copper wires, special care is taken to maintain the bonding equipment and the atmosphere around it in a constant state.

熱圧着工程の関する技術として特開昭６２−１６２３３
８号公報により開示したワイヤボンディング装置がある
。Japanese Patent Application Laid-Open No. 62-16233 as a technology related to thermocompression bonding process
There is a wire bonding device disclosed in Japanese Patent No. 8.

この技術はワイヤボンディング装置に設置するボンディ
ングアームの温度制御に配慮したもので、具体的にはこ
のボンディングアームと平行に設置したノズルに所定の
間隔で冷媒噴出孔を形成し、しかも噴出孔から噴出する
冷媒は対向する位置に存在するボンディングアームを冷
却する方式を採用している。と言うのは金属細線製ボー
ルを利用する熱圧着工程におってはボンディング用部品
の温度を制御してその精度や強度の増大を図っているこ
とが明らかでおる。This technology takes into consideration the temperature control of the bonding arm installed in wire bonding equipment. Specifically, coolant jet holes are formed at predetermined intervals in a nozzle installed parallel to the bonding arm, and the refrigerant is spouted from the nozzle. A method is adopted in which the refrigerant cools the bonding arms located in opposing positions. This is because it is clear that in the thermocompression bonding process that uses balls made of thin metal wire, the temperature of the bonding parts is controlled to increase their accuracy and strength.

ワイヤボールボンディング装置に超音波を適用する以前
は金属細線を長手方向に自在に移動し、かつ把持するツ
ールもしくはその付近に配置する部品に加熱装置を設置
することにより熱圧着強度等の特性を向上する方法か採
用されていた。しかしこの超音波を利用するワイヤボー
ルボンディング装置では超音波への影響を恐れてこの設
置を見合わせていたのが実状である。Before applying ultrasonic waves to wire ball bonding equipment, properties such as thermocompression bonding strength were improved by freely moving the thin metal wire in the longitudinal direction and installing a heating device on the tool to be gripped or on the parts placed near it. The method was adopted. However, in the case of wire ball bonding equipment that utilizes ultrasonic waves, the actual situation is that this installation has been postponed due to fear of the effect on the ultrasonic waves.

（発明が解決しようとする課題〉 前）ボのように被ボンディング材料を設置するボンディ
ングステージではボンディングアームが加熱に伴う熱膨
張により伸びるのを、冷媒の噴出により防止しているが
それでも問題が発生する。即ち、０）ボンディングアー
ムと冷却用冷媒を噴出するノズルの働きを同期させるこ
とが難しいので、ボンディングアームの温度が不安定に
なる。(Problems to be Solved by the Invention) Previous) In the bonding stage where materials to be bonded are placed, as in the case of a bonding stage, the bonding arm is prevented from elongating due to thermal expansion due to heating, but the problem still occurs. do. That is, 0) It is difficult to synchronize the functions of the bonding arm and the nozzle that spouts the cooling refrigerant, so the temperature of the bonding arm becomes unstable.

（２）ボンディングアームの冷却によりポンディングキ
ャピラリイの温度ひいては金属細線温度も低くなり熱圧
着強度が不安定になる。Ｑ′１１１金属細線として酸化
性の強い材料を適用した場合には酸化防止用雰囲気が不
可欠であり、従って前述のような気体の噴出等の手法は
不適当である。(2) Cooling of the bonding arm lowers the temperature of the bonding capillary and, by extension, the temperature of the thin metal wire, making the thermocompression bonding strength unstable. When a strongly oxidizing material is used as the Q'111 thin metal wire, an atmosphere for preventing oxidation is essential, and therefore the above-mentioned methods such as blowing out gas are inappropriate.

本発明は上記の欠点を除去する新規なボンディング装置
に係わり、特にボンディングキャピラリイ温度の安定化
を図ることを目的とするものでおる。The present invention relates to a new bonding apparatus that eliminates the above-mentioned drawbacks, and particularly aims at stabilizing the bonding capillary temperature.

〔発明の構成〕[Structure of the invention]

（課題を解決するための手段） この目的を達成するのに本発明では鉛直方向の移動が自
在なボンディングキャピラリイに近接する位置に配置す
る支持部材に発′熱体を設置する手法を採用する。(Means for Solving the Problem) In order to achieve this object, the present invention employs a method in which a heating element is installed on a support member placed close to a vertically movable bonding capillary. .

（作　用） ワイヤボンディング装置には超音波を利用する型と、先
端に熱圧着用硬質材料を取付けたボンディングキャピラ
リイ自体が鉛直方向に移動する型が適用されており、超
音波を利用する型ではいわゆるホーンを支持し、鉛直方
向に移動可能な部品の先端に熱圧着用硬質材料を取付で
おり、本発明ではこのいずれの型にも適用できることを
先ず明確にしておく。更に熱圧着工程に使用する金属細
線には金、ΔＢならびに銅からなる材料、そしてＡ℃な
らびに銅からなる材料におってはその合金も適用できる
。(Function) There are two types of wire bonding equipment: one uses ultrasonic waves, and the other uses a bonding capillary with a thermocompression hard material attached to its tip that moves vertically. In this case, a hard material for thermocompression is attached to the tip of a part that supports a so-called horn and is movable in the vertical direction, and it should first be made clear that the present invention can be applied to any of these types. Furthermore, materials made of gold, ΔB, and copper, and alloys of these metal wires used in the thermocompression bonding process can be used as materials made of A°C and copper.

前）ホのように本発明ではボンディングキャピラリイに
連続して配置する部品である支持部材に加熱体を設置し
たのは、超音波を利用する型と利用しない型の両ワイヤ
ボンディング装置でも、熱圧着工程時の温度を一定とす
ることにより金属細線の伸びも一定とすると熱圧着強度
等の特性が改善される事実に立脚して完成されたもので
ある。In the present invention, the heating element is installed on the support member, which is a part that is placed continuously on the bonding capillary, as shown in (e) above.The reason for this is that the heating element is installed in the support member, which is a part that is placed continuously with the bonding capillary, because both wire bonding machines that use ultrasonic waves and those that do not use This method was developed based on the fact that properties such as thermocompression bonding strength are improved by keeping the elongation of the thin metal wire constant by keeping the temperature constant during the crimping process.

下記の測定に当たっては熱圧着にとってキリキリな超音
波極少出力を適用して温度による影響を調査したもので
ある。In the following measurements, we investigated the influence of temperature by applying extremely low ultrasonic output, which is sharp for thermocompression bonding.

表　　１ このように熱圧着時におりる温度が高い場合がそのイ」
４率か良く、しかも熱圧着条件を多少アップ（ｕｐ）ｂ
だ時でもこの温度が低いてハガレが発生することか明ら
かであり、このような根拠を基にキャピラリイに連続し
て設置するボンディングアームを加熱する手段を設置す
る手法を採用する。Table 1 This is the case when the temperature during thermocompression bonding is high.
4 rate is good, and the thermocompression bonding conditions are slightly increased (up) b
It is obvious that peeling will occur even when the temperature is low, and based on this basis, we adopted a method of installing a means to heat the bonding arm that is installed continuously on the capillary.

即ら本発明では熱圧着時にあ（ブる熱による障害を除去
するのに、一定の温度雰囲気に曝した金属細線を適用す
るものであって結果的にはボンディング条イ〈１範囲を
広げるものである。その具体的手段としてはキャピラリ
イに接近して配置するその支持部材に発熱体を設置する
か、あるいはキャピラリイ付近をホットガスにより加熱
して、金属細線の温度を予め加熱するものでおる。That is, in the present invention, a thin metal wire exposed to a constant temperature atmosphere is applied to remove the trouble caused by the heat generated during thermocompression bonding, and as a result, the bonding strip (1) is expanded. Specific means for this include installing a heating element on the support member placed close to the capillary, or heating the vicinity of the capillary with hot gas to preheat the temperature of the thin metal wire. is.

（実施例） 第１図乃至第２図により本発明を詳述する。(Example) The present invention will be explained in detail with reference to FIGS. 1 and 2.

第２図イ、口に金属細線を埋設する例を、第１図はホッ
トガスによる場合が示されている。即ち第１図には超音
波ボールボンディング装置の一部のみを示し他は直接本
発明に関係が無いので割愛した。即ち超音波ホーンに連
結したボンディングアーム１にはその先端を分割して隙
間を設置し、ここに固定するキャピラリイ２に形成する
孔部（図示せず）に金属細線２を挿入して以下の工程を
経てボールボンディングを完成する。Figure 2A shows an example in which a thin metal wire is buried in the opening, and Figure 1 shows the case in which hot gas is used. That is, FIG. 1 shows only a part of the ultrasonic ball bonding apparatus, and the other parts are omitted because they are not directly related to the present invention. That is, the tip of the bonding arm 1 connected to the ultrasonic horn is divided to provide a gap, and a thin metal wire 2 is inserted into a hole (not shown) formed in the capillary 2 to be fixed there. Ball bonding is completed through the process.

キャビラリイ２に挿入固定される金属細線３は図示して
いないクランパーの稼動により一定長が鉛直方向に繰出
される構造となっており、更にこのキャピラリイ２から
一定の長さで繰出された金属細線３を溶融して正確な真
円度を持つボールを形成するための加熱源（図示せず〉
を設置する。The thin metal wire 3 inserted and fixed into the capillary 2 has a structure in which a fixed length is drawn out in the vertical direction by the operation of a clamper (not shown), and the thin metal wire 3 drawn out from the capillary 2 at a fixed length is A heating source (not shown) to melt 3 and form a ball with precise roundness.
Set up.

これには一般的に電気トーチ方式が採用されしかも金属
細線３として酸化し易い銅もしくは銅合金を適用する機
種では、このボール形成付近を一定の気体雰囲気を維持
するように配慮されている。Generally, an electric torch method is adopted for this purpose, and in models in which copper or copper alloy, which is easily oxidized, is used as the thin metal wire 3, care is taken to maintain a constant gas atmosphere around the ball formation area.

即ちボールならびに熱圧着工程にあける熱負荷によりこ
の銅もしくは銅合金製金属細線３の酸化を防止するもの
であり、この結果正確な真円度を持つボールを形成して
熱圧着特性の歩留りを一定に保持するように配慮してい
る。That is, the heat load applied during the ball and thermocompression bonding process prevents oxidation of the thin metal wire 3 made of copper or copper alloy.As a result, a ball with accurate roundness is formed and the yield of thermocompression bonding properties is constant. Care is taken to keep it in place.

第２図イにおるように、キャピラリイ２を支持する部材
でおるボン、ディングアーム１の外部には発熱体４を巻
付けて金属細線３に加熱を施す方式が示されているが、
場合によってはこの発熱体４を第２図口のようにボンデ
ィングアーム１内に埋込んでも差支えない。As shown in FIG. 2A, a method is shown in which a heating element 4 is wrapped around the outside of the bonding arm 1, which is a member that supports the capillary 2, to heat the thin metal wire 3.
In some cases, this heating element 4 may be embedded in the bonding arm 1 as shown in FIG. 2.

更に第１図にはホットガスによる加熱方式を示した。Furthermore, FIG. 1 shows a heating method using hot gas.

この場合ではキャピラリイ２に挿入支持され、しかも露
出する状態に維持した金属細線３が図示されているが、
この金属細線３を筒状部材内に収容する方式による機種
もある。いずれにしてもこの金属細線３もしくは筒状部
材の近所に設置するバーナ５からホットガスにより加熱
する。In this case, the thin metal wire 3 is shown inserted and supported by the capillary 2 and maintained in an exposed state.
There is also a model in which the thin metal wire 3 is housed in a cylindrical member. In any case, the thin metal wire 3 or the cylindrical member is heated with hot gas from a burner 5 installed near the cylindrical member.

このように両方式により加熱された金属細線３を利用す
る超音波熱圧着工程により特性の優れた接合状態が良好
な歩留りで得られる。As described above, by the ultrasonic thermocompression bonding process using the thin metal wire 3 heated by both methods, a bonded state with excellent characteristics can be obtained at a good yield.

（発明の効果〕 このように本発明に係わるボンディング装置では連続し
てボンディングを実施した場合と、この作業を中断する
搬送やポンディングパッドの検出時等の金属細線温度が
一定に保持される。(Effects of the Invention) As described above, in the bonding apparatus according to the present invention, the temperature of the thin metal wire is maintained constant when bonding is performed continuously and when the bonding operation is interrupted during transport or when a bonding pad is detected.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明に係わるボンディング装置の要部を示す
斜視図、第２図イ、口は他の実施例の概略を示す斜視図
である。 代理人　弁理士　　井　上　−男 窮１図 第　　２　　図 ／：、ボ゛ンゲンンフ゛アーム ｚ＝　Ａヤし°ウリ Ｊ　：　イに属８Ｆｆ３請灸 、５：　バーブ 会　＝７４色ｉ四体FIG. 1 is a perspective view showing essential parts of a bonding apparatus according to the present invention, and FIG. 2A is a perspective view schematically showing another embodiment. Agent Patent Attorney Inoue - Mankyu 1 Figure 2 Figure/:, Boingen arm z = A Yashio Uri J: I belong to 8Ff3 Moxibustion, 5: Barb society = 74 colors I four bodies

Claims (1)

【特許請求の範囲】[Claims] 　鉛直方向の移動が自在なボンディングキヤピラリイに
近接する位置に配置する支持部材を加熱する手段を設置
することを特徴とするボンディング装置。A bonding apparatus characterized in that a means for heating a support member disposed close to a vertically movable bonding capillary is installed.
JP63076249A 1988-03-31 1988-03-31 Bonding equipment Pending JPH01251628A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63076249A JPH01251628A (en) 1988-03-31 1988-03-31 Bonding equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63076249A JPH01251628A (en) 1988-03-31 1988-03-31 Bonding equipment

Publications (1)

Publication Number Publication Date
JPH01251628A true JPH01251628A (en) 1989-10-06

Family

ID=13599919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63076249A Pending JPH01251628A (en) 1988-03-31 1988-03-31 Bonding equipment

Country Status (1)

Country Link
JP (1) JPH01251628A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8073054B2 (en) 2002-01-17 2011-12-06 Trident Microsystems (Far East) Ltd. Unit for and method of estimating a current motion vector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8073054B2 (en) 2002-01-17 2011-12-06 Trident Microsystems (Far East) Ltd. Unit for and method of estimating a current motion vector

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