JPH0367340B2 - - Google Patents

Info

Publication number
JPH0367340B2
JPH0367340B2 JP59219903A JP21990384A JPH0367340B2 JP H0367340 B2 JPH0367340 B2 JP H0367340B2 JP 59219903 A JP59219903 A JP 59219903A JP 21990384 A JP21990384 A JP 21990384A JP H0367340 B2 JPH0367340 B2 JP H0367340B2
Authority
JP
Japan
Prior art keywords
bonding
wire
lead frame
bonding wire
reducing gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59219903A
Other languages
Japanese (ja)
Other versions
JPS6197938A (en
Inventor
Mitsuo Kobayashi
Osamu Usuda
Yoshihiko Sano
Koichiro Atsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59219903A priority Critical patent/JPS6197938A/en
Priority to EP85109406A priority patent/EP0169574B1/en
Priority to US06/759,273 priority patent/US4732313A/en
Priority to DE8585109406T priority patent/DE3577371D1/en
Priority to KR1019850005537A priority patent/KR900000205B1/en
Priority to CN85106110A priority patent/CN85106110B/en
Publication of JPS6197938A publication Critical patent/JPS6197938A/en
Publication of JPH0367340B2 publication Critical patent/JPH0367340B2/ja
Granted legal-status Critical Current

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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable to perform a high strength wire bonding on a semiconductor pellet at low cost in a highly reliable manner by a method wherein the ball formed at the tip of a bonding wire is inroaded into the region to be bonded in a sufficient reducing atmosphere. CONSTITUTION:Reducing gas such as N2 and H2 10% is continuously fed into the conveying path 10 with which a lead frame 11 is conveyed, and the conveying path 10 is maintained in a sufficient reducing atmosphere. A capillary 18 is lowered, and a bonding wire 17 is thermo-press welded on an electrode pad 27 through the intermediary of a ball 29. At this time, the ball 29 is crushed in the state wherein it is inroaded into an electrode pad 27 at least as deep as the thickness (x) of 0.5-3mum of the ball 29, it is turned into a flat part 29a and formed into one body with the electrode pad 27.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体素子の組立方法に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a method for assembling semiconductor devices.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来の半導体素子の組立方法では、第６図に示
す如く、リードフレーム１のマウント床に装着さ
れた半導体ペレツト２上の電極パツド３と外部リ
ード４との接続は、金線で作られたボンデイング
線５を架設することにより行われている。このよ
うにボンデイング線５に金線を採用するもので
は、次のような問題がある。 In the conventional semiconductor device assembly method, as shown in FIG. 6, the connection between the electrode pad 3 on the semiconductor pellet 2 mounted on the mounting floor of the lead frame 1 and the external lead 4 is made by bonding made of gold wire. This is done by constructing a line 5. In this way, the bonding wire 5 made of gold wire has the following problems.

高温でボンデイング線５の架設を行うと、
Al製の電極パツド３とボンデイング線５の接
合部に金とアルミニウムの化合物が生じる。こ
のため接合部で電気特性の劣化が生じる。 When the bonding wire 5 is installed at high temperature,
A compound of gold and aluminum is generated at the joint between the electrode pad 3 made of Al and the bonding wire 5. This causes deterioration of electrical characteristics at the joint.

金線からなるボンデイング線５自身に酸化が
起きない場合であつても、接合部の電気特性の
劣化によつて半導体素子の信頼性が低下する。 Even if the bonding wire 5 itself made of gold wire is not oxidized, the reliability of the semiconductor device is reduced due to the deterioration of the electrical characteristics of the bonding portion.

金とアルミニウムの化合物はボンデイング処
理後の放置された状態下でも発生するため、電
気特性の安定した半導体素子が得られない。 Since a compound of gold and aluminum is generated even when the bonding process is left unattended, a semiconductor element with stable electrical characteristics cannot be obtained.

金線は高価であるため、製造価格が高くな
る。 Since gold wire is expensive, manufacturing costs are high.

このような問題を解消するために特願昭55−
88318号公報にて被ボンデイング領域を選択的に
活性化することにより、銅線からなるボンデイン
グ線と銅製のリードフレーム間でボンデイング線
の架設を行う技術が開示されている。しかしなが
ら、この技術ではボンデイング線の方に発生する
酸化物によつて接合不良が発生すると共に、ボン
デイング線の先端部に所定のボールを形成するの
が難しいため、接合不良を招く問題がある。更
に、各々のボンデイング処理毎に被ボンデイング
領域の活性化を行うため、作業性が悪い。 In order to solve this problem, a special patent application was filed in 1983.
Japanese Patent No. 88318 discloses a technique for constructing a bonding wire between a copper wire and a copper lead frame by selectively activating a region to be bonded. However, this technique has problems in that bonding defects occur due to oxides generated on the bonding wire, and that it is difficult to form a predetermined ball at the tip of the bonding wire, resulting in bonding defects. Furthermore, since the bonding target region is activated for each bonding process, workability is poor.

また、特願昭57−51237号公報では、ボンデイ
ング線を導出するキヤピラリの先端部を還元雰囲
気に保たれたカバー内に導入して、所望形状のボ
ールを形成すると共にボンデイング線の酸化防止
をしてボンデイング処理を行う技術が開示されて
いる。しかしながら、この技術では還元雰囲気を
保つためのカバーを含んだ複雑な機構が必要とな
り、１秒以下の処理速度で行われるボンデイング
処理の下では、故障が起き易すく保守管理に手間
を要する問題がある。また、外部リードが形成さ
れたリードフレーム側の酸化物を除去できないた
め、銅線からなるボンデイグ線と銅製のリードフ
レームとの間では信頼性の高いボンデイング処理
を行うことができない問題がある。 Furthermore, in Japanese Patent Application No. 57-51237, the tip of a capillary leading out the bonding wire is introduced into a cover kept in a reducing atmosphere to form a ball of a desired shape and to prevent the bonding wire from oxidizing. A technique for performing a bonding process is disclosed. However, this technology requires a complicated mechanism including a cover to maintain a reducing atmosphere, and when bonding is performed at a processing speed of less than 1 second, it is prone to breakdowns and requires time-consuming maintenance. be. Furthermore, since the oxide on the lead frame side where the external leads are formed cannot be removed, there is a problem in that highly reliable bonding cannot be performed between the bonding wire made of copper wire and the copper lead frame.

〔発明の目的〕[Purpose of the invention]

本発明は、半導体ペレツトに高い信頼性と高い
強度の下に、しかも安価にワイヤボンデイングを
施すことができる半導体素子の組立方法を提供す
ることをその目的とするものである。 SUMMARY OF THE INVENTION An object of the present invention is to provide a method for assembling a semiconductor element, which enables wire bonding to semiconductor pellets with high reliability and high strength, and at low cost.

〔発明の概要〕[Summary of the invention]

本発明は、リードフレームの搬送路、ボンデイ
ング処理を行うボンデイング処理部及びボンデイ
ング線を導出するキヤピラリの周辺領域を常に十
分な還元雰囲気に保ち、かつ、ボンデイング線の
先端部に形成したボールをその肉厚の0.5〜3μｍ
が被ボンデイング領域に喰込むようにしたことに
より、半導体ペレツトに高い信頼性と高い強度に
下に、しかも安価にワイヤボンデイングを行うこ
とができる半導体素子の組立方法である。 The present invention always maintains a sufficient reducing atmosphere in the lead frame conveyance path, the bonding processing section that performs the bonding process, and the surrounding area of the capillary that leads out the bonding wire, and the ball formed at the tip of the bonding wire is Thickness 0.5~3μm
This is a method of assembling a semiconductor device, in which wire bonding can be performed on semiconductor pellets with high reliability and high strength, and at low cost, by making the wires bite into the region to be bonded.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例について図面を参照して
説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第１図は、本発明方法をリードフレームの移動
順路に従つて示す説明図である。図中１０は、リ
ードフレーム１１を搬送する搬送路である。搬送
路１０内には例えばガス源からN2とH210％のよ
うな還元性のガスが連続的に供給され、十分に還
元性の雰囲気に保たれている。搬送路１０内に
は、ダイボンデイング部１２、ワイヤボンデイン
グ部１３、ポストボンデイング部１４が所定の間
隔を設けて配置されている。ダイボンデイング部
の搬送路１０の天井部には、半導体ペレツト１５
をダイボンデイング部１２に供給するコレツト等
の把持具が出入する窓１６が開口している。ワイ
ヤボンデイグ部１３の搬送路１０の天井部には、
ボンデイング線１７を供給するキヤピラリ１８を
ボンデイング部１３内に出入させるための窓１９
が開口されている。ポストボンデイング部１４の
搬送路１０の天井部には、ボンデイング線１７を
リードフレーム１１の外部リード２１側に熱圧着
させるための押圧具２０が出入する窓２２が開口
されている。また、搬送路１０の床部には、ガイ
ドレール等からなる搬送手段が設けられている。
ダイボンデイング部１２、ワイヤボンデイング部
１３、ポストボンデイング部１４の床部には、リ
ードフレーム１１を所定温度に加熱するためのヒ
ータ２３，２４，２５が内蔵されている。 FIG. 1 is an explanatory diagram showing the method of the present invention according to the moving route of a lead frame. Reference numeral 10 in the figure is a conveyance path for conveying the lead frame 11. A reducing gas such as N 2 and 10% H 2 is continuously supplied into the conveyance path 10 from a gas source to maintain a sufficiently reducing atmosphere. In the conveyance path 10, a die bonding section 12, a wire bonding section 13, and a post bonding section 14 are arranged at predetermined intervals. Semiconductor pellets 15 are placed on the ceiling of the conveyance path 10 in the die bonding section.
A window 16 is opened through which a gripping tool such as a collet for supplying the die bonding portion 12 to the die bonding section 12 enters and exits. On the ceiling of the conveyance path 10 of the wire bonding section 13,
A window 19 for allowing the capillary 18 that supplies the bonding wire 17 to enter and exit the bonding section 13
is opened. A window 22 is opened in the ceiling of the conveyance path 10 of the post bonding section 14 through which a pressing tool 20 for thermocompression bonding the bonding wire 17 to the external lead 21 side of the lead frame 11 enters and exits. Furthermore, a conveyance means such as a guide rail is provided on the floor of the conveyance path 10.
Heaters 23, 24, and 25 for heating the lead frame 11 to a predetermined temperature are built into the floors of the die bonding section 12, wire bonding section 13, and post bonding section 14.

而して、先ず、リードフレーム１１を搬送手段
によりダイボンデイグ部１２に供給する。リード
フレーム１１は、無酸素銅、リン脱酸銅、Cu−
20％Au等の銅または銅合金で形成されている。
ダイボンデイング部１２に供給されたリードフレ
ーム１１は、ヒータ２３で所定温度に加熱され
る。この状態で窓１６から半導体ペレツト１５が
供給され、リードフレーム１１のマウント部に半
田層２６を介して半導体ペレツト１５が装着され
る。 First, the lead frame 11 is supplied to the die bonding section 12 by the conveying means. The lead frame 11 is made of oxygen-free copper, phosphorus-deoxidized copper, Cu-
It is made of copper or copper alloy such as 20% Au.
The lead frame 11 supplied to the die bonding section 12 is heated to a predetermined temperature by the heater 23. In this state, the semiconductor pellet 15 is supplied through the window 16, and is mounted on the mount portion of the lead frame 11 via the solder layer 26.

次に、第２図Ａに示す如く、半導体ペレツト１
５が装着されたリードフレーム１１は、ワイヤボ
ンデイング１３に供給される。ワイヤボンデイン
グ１３の所定位置に設定されると、リードフレー
ム１１はヒータ２４によつて約300℃に加熱され、
半導体ペレツト１５上の電極も所定温度に加熱さ
れる。次いで、窓１９の入口部までキヤピラリ１
８が降下し、窓１９の近傍に設けられたバーナー
２８によりキヤピラリ１８の先端部から導出した
ボンデイング線１７の先端部分にボール２９を形
成する。ボンデイング線１７は、無酸素銅、リン
脱酸銅、Cu−20％Au等の銅または銅合金で形成
されている。ここで、バーナー２８は、第３図に
示す如く、外管２８ａとこれよりも僅に内側に入
つた内管２８ｂとからなる２重構造を有してい
る。内管２８ｂからはH2とO2の混合ガスが噴出
して酸水素炎３０を形成し、この酸水素炎３０に
よりボール２９を形成するようになつている。外
管２８ａからは空気が噴出し、酸水素炎３０を囲
むエアカーテン３１を形成している。而して、バ
ーナー２８によるボール２９の形成は、窓１９を
構成する可動カバー３２でボンデイング線１７の
先端部を囲みながら、ワイヤボンデイング部から
噴上げる還元性ガス３３の雰囲気内でエアカーテ
ン３１に包まれた酸水素炎３０によつて行われ
る。 Next, as shown in FIG. 2A, the semiconductor pellet 1
The lead frame 11 to which the lead frame 5 is attached is supplied to the wire bonding 13. Once set at the predetermined position of the wire bonding 13, the lead frame 11 is heated to approximately 300°C by the heater 24.
The electrodes on the semiconductor pellet 15 are also heated to a predetermined temperature. Next, connect the capillary 1 to the entrance of the window 19.
8 descends, and a burner 28 provided near the window 19 forms a ball 29 at the tip of the bonding wire 17 led out from the tip of the capillary 18. The bonding wire 17 is made of copper or copper alloy such as oxygen-free copper, phosphorus-deoxidized copper, Cu-20% Au, or the like. As shown in FIG. 3, the burner 28 has a double structure consisting of an outer tube 28a and an inner tube 28b slightly inside the outer tube 28a. A mixed gas of H 2 and O 2 is ejected from the inner tube 28b to form an oxyhydrogen flame 30, and the ball 29 is formed by this oxyhydrogen flame 30. Air blows out from the outer tube 28a, forming an air curtain 31 surrounding the oxyhydrogen flame 30. Thus, the formation of the ball 29 by the burner 28 is carried out by enclosing the tip of the bonding wire 17 with the movable cover 32 constituting the window 19, and applying it to the air curtain 31 in the atmosphere of the reducing gas 33 spouted from the wire bonding part. This is carried out by a wrapped oxyhydrogen flame 30.

次に、キヤピラリ１８を降下して電極パツド２
７上にボール２９の部分を介してボンデイング線
１７を熱圧着する。その時、ボール２９はボンデ
イング線１７を押し出す荷重に応じて第４図Ａに
示す如く、少なくともボール２９の肉厚の0.5〜
3μｍの厚さＸだけ電極パツド２７内に喰込んだ
状態で押し潰されて偏平な形状となつて電極パツ
ド２７と一体化する。この偏平した端部２９の喰
込み深さＸは、例えば電極パツド２７が厚さ１〜
3μのAl層で形成されており、ボンデイング線１
７が２５μｍφの銅線である場合、80〜100ｇの
荷重をボンデイング線１７に加えると0.5〜3μｍ
の範囲に設定することができる。 Next, the capillary 18 is lowered to the electrode pad 2.
The bonding wire 17 is thermocompression bonded onto the ball 7 via the ball 29 portion. At this time, the ball 29 is at least 0.5 to 0.5 of the wall thickness of the ball 29 as shown in FIG.
It bites into the electrode pad 27 by a thickness X of 3 μm and is crushed into a flat shape and integrated with the electrode pad 27. The biting depth X of the flattened end portion 29 is, for example, such that the electrode pad 27 has a thickness of 1 to
It is formed of a 3μ Al layer, and the bonding line 1
If 7 is a copper wire with a diameter of 25 μm, if a load of 80 to 100 g is applied to the bonding wire 17, the wire will become 0.5 to 3 μm.
It can be set to a range of .

次に、第２図Ｂに示す如く、キヤピラリ１８を
引き上げて窓１９の部分でバーナー２８によりボ
ンデイング線１７を所定の長さに切断すると共
に、電極パツド２７に接続したボンデイング線１
７ａの端部及びキヤピラリ１８側に残つたボンデ
イング線１７の端部にボール２９ａ，２９ｂを
夫々形成する。この時もボンデイング線１７ａ，
１７ｂは、還元性ガス３３で囲まれている。 Next, as shown in FIG. 2B, the capillary 18 is pulled up and the bonding wire 17 is cut to a predetermined length using the burner 28 at the window 19, and the bonding wire 17 connected to the electrode pad 27 is removed.
Balls 29a and 29b are formed at the end of bonding wire 17 remaining on the capillary 18 side. At this time as well, the bonding wire 17a,
17b is surrounded by reducing gas 33.

次に、第２図Ｃに示す如く、ボンデイング線１
７ａを外部リード２１側に所定の角度で折曲して
ホーミングしてから、リードフレーム１１を次の
ポストボンデイング部１４に供給する。このとき
搬送路１０内の雰囲気ガスの温度は、200〜300℃
に保たれている。 Next, as shown in FIG. 2C, bonding wire 1
7a is bent at a predetermined angle toward the external lead 21 and homed, and then the lead frame 11 is supplied to the next post bonding section 14. At this time, the temperature of the atmospheric gas in the conveyance path 10 is 200 to 300°C.
is maintained.

次に、第２図Ｄに示す如く、リードフレーム１
１がポストボンデイング部１４の所定位置に設定
されたところで、これを約300℃以上の温度で加
熱しながら、押圧具２０を窓２２から挿入降下
し、ホーミングされたボンデイング線１７ａの端
部のボール２９ａの部分を外部リード２１に熱圧
着する。このとき、ボール２９ａには300〜500ｇ
の荷重を加えて、第４図Ｂに示す如く、外部リー
ド２１にボール２９ａを20〜50μｍの深さまで喰
込ませる。このポストボンデイング処理の際にも
押圧具２０は可動カバー３２で囲まれており、押
圧具２０、ボール２９ａ及びボンデイング線17a
は、、還元性ガス３３で包まれている。このよう
にして銅または銅合金からなるリードフレーム１
１に装着された半導体ペレツト１５に、銅または
銅合金からなるボンデイング線１７を架設する。 Next, as shown in FIG. 2D, the lead frame 1
1 is set at a predetermined position in the post bonding part 14, the pressing tool 20 is inserted and lowered through the window 22 while heating it at a temperature of about 300° C. or more, and the ball at the end of the homed bonding wire 17a is removed. The portion 29a is thermocompression bonded to the external lead 21. At this time, the ball 29a contains 300 to 500 g.
The ball 29a is made to bite into the external lead 21 to a depth of 20 to 50 .mu.m by applying a load of . During this post bonding process, the pressing tool 20 is surrounded by a movable cover 32, and includes the pressing tool 20, the ball 29a, and the bonding line 17a.
is surrounded by reducing gas 33. In this way, the lead frame 1 made of copper or copper alloy
A bonding wire 17 made of copper or a copper alloy is installed on the semiconductor pellet 15 mounted on the semiconductor pellet 1.

このようにしてボンデイング線１７を架設した
半導体素子では、第５図に示す高温放置試験での
不良品発生特性線Ａから有らかなように200℃の
温度下で200時間放置しても不良品は全く発生し
なかつた。これに対して従来の方法でボンデイン
グ線の架設をした半導体装置では不良品発生特性
線Ｂから明らかなように、100時間放置後には不
良品が25％発生し、200時間後には50％の不良品
が発生した。 In the semiconductor device in which the bonding wire 17 is installed in this way, even if the semiconductor device is left at a temperature of 200°C for 200 hours, it will still be defective, as shown in the defect occurrence characteristic line A in the high temperature storage test shown in Figure 5. did not occur at all. On the other hand, in semiconductor devices with bonding lines installed using the conventional method, 25% of the products are defective after being left unused for 100 hours, and 50% of the products are defective after 200 hours, as is clear from the defective product occurrence characteristic line B. A good product was found.

また、本発明方法では、銅または銅合金からな
るボンデイング線１７を架設するので、引張り強
度は13〜15ｇであり金線の５〜９ｇに比べ２〜
2.5倍向上させることができる。 In addition, in the method of the present invention, since the bonding wire 17 made of copper or copper alloy is constructed, the tensile strength is 13 to 15 g, which is 2 to 2 g compared to 5 to 9 g for gold wire.
It can be improved by 2.5 times.

また、本発明方法では、銅または銅合金からな
るボンデイング線１７を使用するので、電極パツ
ド２７との接合部においてアルミニウム−金の化
合物が発生する虞れはなく、ボンデイング時の温
度を150〜450℃の高温域に設定することができ
る。その結果、ボンデイング線１７と電極パツド
２７及び外部リード２１との接合を良好にして半
導体素子の電気特性を向上させることができる。 Furthermore, in the method of the present invention, since the bonding wire 17 made of copper or copper alloy is used, there is no possibility that an aluminum-gold compound will be generated at the joint with the electrode pad 27, and the temperature at the time of bonding is set at 150 to 450. It can be set to a high temperature range of ℃. As a result, it is possible to improve the bonding between the bonding wire 17, the electrode pad 27, and the external lead 21, thereby improving the electrical characteristics of the semiconductor element.

また、銅または銅合金からなるボンデイング線
１７を使用するので製造コストを低減させること
ができる。 Furthermore, since the bonding wire 17 made of copper or copper alloy is used, manufacturing costs can be reduced.

なお、実施例では、ワイヤボンデイングとポス
トボンデイングの前にボンデイング線１７にボー
ル２９を予め形成しておく所謂ボールツーボール
方式のボンデイング手段を使用した場合について
説明したが、本発明は、この他にもワイヤボンデ
イグ後のボンデイング線１７の切断をキヤピラリ
１８のエツジ部分で行う所謂ウエツジ方式のボン
デンイング手段を採用しても良いことは勿論であ
る。 In addition, in the embodiment, a case has been described in which a so-called ball-to-ball type bonding means is used, in which a ball 29 is formed in advance on the bonding line 17 before wire bonding and post bonding, but the present invention is also applicable to other methods. It goes without saying that a so-called wedge type bonding means in which the bonding wire 17 is cut at the edge portion of the capillary 18 after wire bonding may be employed.

〔発明の効果〕〔Effect of the invention〕

以上説明した如く、本発明に係る半導体素子の
組立方法によれば、半導体ペレツトに高い信頼性
と高い強度の下に、しかも安価にワイヤボンデイ
ングを施すことができるものである。 As explained above, according to the method for assembling a semiconductor device according to the present invention, wire bonding can be performed on semiconductor pellets with high reliability and high strength at a low cost.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、本発明の実施例の概略構成を示す説
明図、第２図Ａ乃至同図Ｄは、本発明方法の主な
工程を示す説明図、第３図は、本発明方法で使用
するバーナーの炎の状態を示す説明図、第４図
Ａ，Ｂは、本発明方法で接続されたボンデイング
線の接続部を示す説明図、第５図は、不良品発生
率と時間との関係を示す特性図、第６図は、従来
方法でボンデイング線を架設したリードフレーム
の要部を示す斜視図である。 １０……搬送路、１１……リードフレーム、１
２……ダイボンデイング部、１３……ワイヤボン
デイング部、１４……ポストボンデイング部、１
５……半導体ペレツト、１６，１９，２２……
窓、１７……ボンデイング線、１８……キヤピラ
リ、２０……押圧具、２１……外部リード、２
３，２４，２５……ヒータ、２６……半田層、２
７……電極パツド、２８……バーナー、２９……
ボール、３０……酸水素炎、３１……エアカーテ
ン、３２……可動カバー、３３……還元性ガス。 FIG. 1 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention, FIGS. 2A to 2D are explanatory diagrams showing the main steps of the method of the present invention, and FIG. 3 is an explanatory diagram showing the main steps of the method of the present invention. 4A and 4B are explanatory diagrams showing the state of the flame of the burner, and FIG. 5 is an explanatory diagram showing the connection part of the bonding wire connected by the method of the present invention. FIG. 6 is a perspective view showing a main part of a lead frame in which a bonding wire is installed using a conventional method. 10... Conveyance path, 11... Lead frame, 1
2...Die bonding part, 13...Wire bonding part, 14...Post bonding part, 1
5... Semiconductor pellets, 16, 19, 22...
Window, 17... Bonding wire, 18... Capillary, 20... Pressing tool, 21... External lead, 2
3, 24, 25...Heater, 26...Solder layer, 2
7... Electrode pad, 28... Burner, 29...
Ball, 30...Oxyhydrogen flame, 31...Air curtain, 32...Movable cover, 33...Reducing gas.

Claims (1)

【特許請求の範囲】 １ 半導体ペレツト、銅若しくは銅合金製のリー
ドフレーム、及び銅若しくは銅合金製のボンデイ
ング線を使用して半導体素子を組立てる方法であ
つて、 前記リードフレームに取付けられた前記半導体
ペレツトに前記ボンデイング線の一方の端部を接
着する為のワイヤボンデイング部、及び、前記リ
ードフレームに前記ボンデイング線の他方の端部
を接着する為のポストボンデイング部、を搬送路
に沿つて一体的に順次形成し、且つ前記搬送路全
体を還元性ガス雰囲気の概ね閉鎖された空間とし
て形成し、前記搬送路に沿つて前記リードフレー
ムを搬送する工程と、 前記ワイヤボンデイング部において、前記ボン
デイング線の原材を供給すると共に、前記還元性
ガス雰囲気中で、前記ボンデイング線の前記一方
の端部を加熱してボール状に変形する工程と、 前記ワイヤボンデイング部において、前記還元
性ガス雰囲気中で、前記リードフレームを加熱し
ながら前記ボンデイング線の前記一方の端部を前
記半導体ペレツトに対して押圧し、前記半導体ペ
レツトに対して前記ボール状の一方の端部が0.5
〜3μｍ食込むように熱圧着する工程と、 前記ワイヤボンデイング部において、前記還元
性ガス雰囲気中で、前記ボンデイング線の原材を
所定寸法に溶断し、前記ボンデイング線の前記他
方の端部を得る工程と、 前記ポストボンデイング部において、前記還元
性ガス雰囲気中で、前記リードフレームを加熱し
ながら前記ボンデイング線の前記他方の端部を前
記リードフレームに対して押圧し、前記リードフ
レームに対して前記他方の端部が20〜50μｍ食込
むように熱圧着する工程と、 を具備することを特徴とする半導体素子の組立方
法。 ２ 前記リードフレームに前記半導体ペレツトを
接着する為のダイボンデイング部を、前記ワイヤ
ボンデイング部、及び前記ポストボンデイング部
と共に、前記搬送路に沿つて一体的に順次形成
し、且つ前記搬送路全体を還元性ガス雰囲気の概
ね閉鎖された空間として形成し、 前記ダイボンデイング部において、前記還元性
ガス雰囲気中で、前記リードフレームを加熱しな
がら前記リードフレーム上に半田層を介して前記
半導体ペレツトを接着する、 特許請求の範囲第１項に記載の方法。[Scope of Claims] 1. A method for assembling a semiconductor element using a semiconductor pellet, a lead frame made of copper or a copper alloy, and a bonding wire made of copper or a copper alloy, comprising: the semiconductor attached to the lead frame; A wire bonding section for bonding one end of the bonding wire to the pellet, and a post bonding section for bonding the other end of the bonding wire to the lead frame are integrated along a conveyance path. forming the entire conveyance path as a generally closed space with a reducing gas atmosphere, and conveying the lead frame along the conveyance path; supplying a raw material and heating the one end of the bonding wire in the reducing gas atmosphere to deform it into a ball shape; in the wire bonding part, in the reducing gas atmosphere; While heating the lead frame, the one end of the bonding wire is pressed against the semiconductor pellet, and the one end of the ball shape is pressed against the semiconductor pellet by 0.5 cm.
a step of thermocompression bonding so as to penetrate by ~3 μm, and cutting the raw material of the bonding wire to a predetermined size in the reducing gas atmosphere in the wire bonding part to obtain the other end of the bonding wire. In the post bonding section, the other end of the bonding wire is pressed against the lead frame while heating the lead frame in the reducing gas atmosphere, and the other end of the bonding wire is pressed against the lead frame. 1. A method for assembling a semiconductor device, comprising the steps of thermocompression bonding so that the other end digs in by 20 to 50 μm. 2. A die bonding section for bonding the semiconductor pellet to the lead frame is integrally and sequentially formed along the conveyance path together with the wire bonding section and the post bonding section, and the entire conveyance path is reduced. forming a generally closed space in a reducing gas atmosphere, and bonding the semiconductor pellet onto the lead frame via a solder layer while heating the lead frame in the reducing gas atmosphere in the die bonding section. , the method according to claim 1.
JP59219903A 1984-07-27 1984-10-19 Method for assembling semiconductor element Granted JPS6197938A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59219903A JPS6197938A (en) 1984-10-19 1984-10-19 Method for assembling semiconductor element
EP85109406A EP0169574B1 (en) 1984-07-27 1985-07-26 Apparatus for manufacturing semiconductor device
US06/759,273 US4732313A (en) 1984-07-27 1985-07-26 Apparatus and method for manufacturing semiconductor device
DE8585109406T DE3577371D1 (en) 1984-07-27 1985-07-26 APPARATUS FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT.
KR1019850005537A KR900000205B1 (en) 1984-10-19 1985-07-31 Method for assembling semiconductor element
CN85106110A CN85106110B (en) 1984-10-19 1985-08-13 Make device and the using method thereof of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59219903A JPS6197938A (en) 1984-10-19 1984-10-19 Method for assembling semiconductor element

Publications (2)

Publication Number Publication Date
JPS6197938A JPS6197938A (en) 1986-05-16
JPH0367340B2 true JPH0367340B2 (en) 1991-10-22

Family

ID=16742835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59219903A Granted JPS6197938A (en) 1984-07-27 1984-10-19 Method for assembling semiconductor element

Country Status (1)

Country Link
JP (1) JPS6197938A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52142485A (en) * 1976-05-21 1977-11-28 Mitsubishi Electric Corp Wire bonding device
JPS5713747A (en) * 1980-06-27 1982-01-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS58223339A (en) * 1982-06-22 1983-12-24 Toshiba Corp Wire bonding method of semiconductor pellet

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52142485A (en) * 1976-05-21 1977-11-28 Mitsubishi Electric Corp Wire bonding device
JPS5713747A (en) * 1980-06-27 1982-01-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS58223339A (en) * 1982-06-22 1983-12-24 Toshiba Corp Wire bonding method of semiconductor pellet

Also Published As

Publication number Publication date
JPS6197938A (en) 1986-05-16

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