JPH06196522A - Formation of ball in metal wire - Google Patents

Formation of ball in metal wire

Info

Publication number
JPH06196522A
JPH06196522A JP43A JP34582492A JPH06196522A JP H06196522 A JPH06196522 A JP H06196522A JP 43 A JP43 A JP 43A JP 34582492 A JP34582492 A JP 34582492A JP H06196522 A JPH06196522 A JP H06196522A
Authority
JP
Japan
Prior art keywords
ball
wire
recess
formation
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP43A
Other languages
Japanese (ja)
Other versions
JP3210456B2 (en
Inventor
Toshinori Kogashiwa
俊典 小柏
Hideyuki Akimoto
英行 秋元
Hiroyuki Shigyo
裕之 執行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP34582492A priority Critical patent/JP3210456B2/en
Publication of JPH06196522A publication Critical patent/JPH06196522A/en
Application granted granted Critical
Publication of JP3210456B2 publication Critical patent/JP3210456B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide a ball forming method wherein a ball of high sphericity can be formed when a metal wire easy of oxidation like Pb-Sn is used, neck cut at the time of bump formation is reduced by preventing the heat at the time of ball formation from travelling in the length direction of a wire, and a low loop can be realized at the time of bonding. CONSTITUTION:A nearly semi-spherical recess W7 is formed at a tip leading-out port W6 of a wire insertion path W5 of a capillary W4. The tip of a metal wire (a) protruding from the recess W7 is heated in a reaction gas atmosphere, and melted in the recess W7 to formed a ball a2. The upper side semi-circular part of the ball a2 in the molten state is made to abut against the inner surface of the recess W7, and surface tension is applied to the lower side semi-spherical part as the result of abutting. Thereby an excellent ball in a true spherical type can be formed. The heat at the time of ball formation is absorbed by the capillary W4 before the heat travels in the longitudinal direction of the wire (a), so that the coarse region a3 of structure can be shortened.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、ワイヤボンダを用いて
半導体素子のチップ電極と基板上の外部リードとを接続
するワイヤボンディング法、或いは前記チップ電極又は
外部リード上にバンプ電極を形成するワイヤレスボンデ
ィング法におけるボールの形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method for connecting a chip electrode of a semiconductor element to an external lead on a substrate using a wire bonder, or a wireless bonding for forming a bump electrode on the chip electrode or the external lead. Method of forming a ball in the method.

【０００２】[0002]

【従来の技術】従来から、例えばＡｕ，Ａｇ，Pb-Sn ，
Ｓｎ，Ａｌ，Ｃｕ等の金属元素からなるワイヤの先端を
溶融してボールを形成し、このボールをチップ電極に圧
着した後にワイヤを引張ってボールを切断してバンプ電
極を形成するバンプ接続法や、前記ボールをチップ電極
に圧着したワイヤをループ状に外部リードまで導いて圧
着させた後に切断するワイヤボンディング法が知られて
いる。2. Description of the Related Art Conventionally, for example, Au, Ag, Pb-Sn,
A bump connecting method in which a tip of a wire made of a metal element such as Sn, Al, Cu is melted to form a ball, the ball is pressure-bonded to a chip electrode, and then the wire is pulled to cut the ball to form a bump electrode, There is known a wire bonding method in which a wire obtained by crimping the ball onto a chip electrode is guided to an external lead in a loop shape, crimped, and then cut.

【０００３】また、上記ボールの形成方法として図３，
４に示すように、ワイヤボンダの先端キャピラリ100 に
垂下せしめた金属ワイヤ200 先端をアーク放電等で加
熱，溶融せしめてボール300 を作製することも周知であ
る。Further, as a method of forming the above-mentioned balls, FIG.
As shown in FIG. 4, it is also known that the ball 300 is produced by heating and melting the tip of the metal wire 200 suspended from the tip capillary 100 of the wire bonder by arc discharge or the like.

【０００４】[0004]

【発明が解決しようとする課題】しかし乍ら従来のボー
ル形成方法によれば、Ａｕ以外の金属元素からなるワイ
ヤ200 を用いた場合、その金属元素が酸化し易いことか
らボール300 を真球状に作製することが難しく、Ｃｕワ
イヤにおいては還元ガスを用いた不活性雰囲気中でボー
ル形成することで対処しているものの、その他Pb-Sn ワ
イヤ等では還元ガスを用いても真球度を向上させること
が困難であった。However, according to the conventional ball forming method, when the wire 200 made of a metal element other than Au is used, the metal element is easily oxidized, so that the ball 300 has a spherical shape. Although it is difficult to fabricate, Cu balls are formed by forming balls in an inert atmosphere using a reducing gas, but other Pb-Sn wires and the like improve the sphericity even when a reducing gas is used. Was difficult.

【０００５】また従来の方法においては、アーク放電等
による熱がボンダ先端から突出するワイヤ部分全域に伝
わることから、その熱によって組織が粗大化する領域40
0 が長くなる結果、バンプ形成時にはネック切れ高さ50
0 が高くなり、フリップチップ実装を行った際にそのネ
ックが隣接するバンプに触れて短絡不良などを起こす要
因となる。またボンディング時にはループ高さが高くな
って、近年におけるＬＳＩパッケージの小型，薄型化に
伴う低ループの要求を満足できない不具合が生じてい
た。Further, in the conventional method, heat generated by arc discharge or the like is transferred to the entire wire portion protruding from the tip of the bonder, so that the heat causes the tissue to become coarse.
As a result of 0 becoming longer, the neck cutting height is 50 when forming bumps.
When the flip-chip mounting is performed, the neck will contact the adjacent bumps and cause a short circuit failure or the like. Further, the loop height becomes high at the time of bonding, and there has been a problem that the demand for a low loop cannot be satisfied due to the recent miniaturization and thinning of LSI packages.

【０００６】本発明はこのような従来事情に鑑みてなさ
れたものであり、その目的とするところは、Pb-Sn 等の
酸化し易い金属元素からなるワイヤを用いても真球度の
高いボールを作製できると共に、ボール作製時の熱がワ
イヤの長さ方向に伝わらないようにしてバンプ形成時に
おけるネック切れ高さを短くし得、且つボンディング時
における低ループ化をなし得るボール形成方法を提供す
ることにある。The present invention has been made in view of such conventional circumstances, and an object thereof is to provide a ball having a high sphericity even if a wire made of a metal element such as Pb-Sn which is easily oxidized is used. And a ball forming method capable of reducing the neck break height during bump formation by preventing heat during ball formation from being transferred in the length direction of the wire and achieving a low loop during bonding. To do.

【０００７】[0007]

【課題を解決するための手段】前述の目的を達成するた
めに本発明の形成方法は、ワイヤボンダにおけるワイヤ
挿通路の先端導出口から突出する金属ワイヤ先端を還元
ガス雰囲気中にて加熱してボールを作製するボール形成
方法であって、前記導出口内面に形成した略半球形状の
凹部内にてワイヤ先端を加熱，溶融せしめてボールを作
製することを特徴とする。In order to achieve the above-mentioned object, the forming method of the present invention is to heat a tip of a metal wire projecting from a tip outlet of a wire insertion passage in a wire bonder in a reducing gas atmosphere to form a ball. The method for producing a ball is characterized in that the tip of the wire is heated and melted in a substantially hemispherical recess formed on the inner surface of the outlet to produce a ball.

【０００８】[0008]

【作用】上述の手段によれば、アーク放電等により加熱
されたワイヤ先端は凹部内にて溶融しボール形状となる
が、その際このボールは表面上半部を凹部内面に当接
し、且つ表面下半部には前記当接による表面張力が作用
することから、真球度の高いきれいなボールがワイヤの
軸線と同芯状に作製される。According to the above-mentioned means, the tip of the wire heated by arc discharge or the like is melted in the recess to form a ball shape, in which case the upper half of the surface of the ball abuts the inner surface of the recess and Since the lower half portion is subjected to the surface tension due to the contact, a clean ball having a high sphericity is produced concentrically with the axis of the wire.

【０００９】同時に、ボール形成時の熱を、ワイヤ長さ
方向へ伝わる以前にボンダに伝達させて吸収することで
ボール直上部分のワイヤ組織の粗大化領域を短くでき、
バンプ形成時にはネック切れ高さが低くなり、ボンディ
ング時にはループ高さが低くなる。At the same time, the heat of ball formation is transferred to the bonder before being transferred in the wire length direction and absorbed, whereby the coarse area of the wire structure immediately above the ball can be shortened,
The height of the neck break becomes low during bump formation, and the loop height becomes low during bonding.

【００１０】[0010]

【実施例】以下、本発明に係るボール形成方法の一実施
例を図面を参照して説明する。本発明で使用する金属ワ
イヤａは例えばＡｕ，Ａｇ，Pb-Sn ，Ｓｎ，Ａｌ，Ｃｕ
等の中の何れか一つを単独で、若しくは何れか一つを主
要元素として所望な添加元素を配合せしめ、これを線径
30μmm程度の細線状に作製したものである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the ball forming method according to the present invention will be described below with reference to the drawings. The metal wire a used in the present invention is, for example, Au, Ag, Pb-Sn, Sn, Al, Cu.
Etc. Any one of the
It was manufactured in the shape of a thin wire of about 30 μmm.

【００１１】また、本発明で用いるワイヤボンダＷは、
例えば図２に示すようなワイヤテンションW1，ワイヤク
ランパW2，トランスデューサW3，キャピラリ（又はツー
ル）W4等を備えた周知な構成において、そのワイヤ挿通
路W5の先端、即ち、キャピラリW4先端に開口するワイヤ
導出口W6の内面に、図１に示す如く略半球形状の凹部W7
を形成してなる。The wire bonder W used in the present invention is
For example, in a well-known configuration including a wire tension W1, a wire clamper W2, a transducer W3, a capillary (or a tool) W4, etc., as shown in FIG. 2, a wire opening at the tip of the wire insertion passage W5, that is, the tip of the capillary W4. As shown in FIG. 1, a recess W7 having a substantially hemispherical shape is formed on the inner surface of the outlet W6.
Is formed.

【００１２】尚、上記ワイヤボンダＷには、後述するボ
ール形成時の熱吸収作用を向上させるために、トランデ
ューサW3又はキャピラリW4用の水冷若しくは空冷冷却手
段を設け、さらにキャピラリW4をタングステンカーバイ
ド等の熱伝導のよい材質で形成する。The wire bonder W is provided with a water-cooling or air-cooling means for the transducer W3 or the capillary W4 in order to improve the heat absorption effect at the time of ball formation, which will be described later, and the capillary W4 is made of tungsten carbide or the like. It is made of a material with good thermal conductivity.

【００１３】そうして、上記金属ワイヤａをワイヤ挿通
路W5に挿通せしめてその先端a1を導出口W6から突出せし
め、且つその先端a1を還元ガス雰囲気中で、その先端a1
付近に設けた電極Ｙと金属ワイヤａとの間でのアーク放
電により加熱してボールa2を形成する。Then, the metal wire a is inserted into the wire insertion passage W5 so that its tip a1 projects from the outlet W6, and its tip a1 is in a reducing gas atmosphere, and its tip a1.
The balls a2 are formed by heating by arc discharge between the electrode Y and the metal wire a provided in the vicinity.

【００１４】上記還元ガスには例えばＡｒガス又はＮ2
ガスなどを用いる。また本実施例におけるアーク放電の
放電時間は0.0005〜0.01秒とする。The reducing gas is, for example, Ar gas or N 2
Gas or the like is used. In addition, the discharge time of the arc discharge in this embodiment is 0.0005 to 0.01 seconds.

【００１５】而して、金属ワイヤａの先端a1を凹部W7か
ら若干突出せしめた状態でアーク放電を行って加熱すれ
ば（図１-(a)）、その先端a1は凹部W7内にて溶融しボー
ル形状となるが、その際このボールa2は表面上半部を凹
部W7内面に当接し、且つ表面下半部には前記当接による
表面張力が作用することから、真球度が高くしわのない
きれいなボールa2がワイヤａの軸線と同芯状に作製され
る（図１-(b)）。When the tip a1 of the metal wire a is made to protrude from the recess W7 and heated by arc discharge (FIG. 1- (a)), the tip a1 is melted in the recess W7. In this case, the ball a2 has its upper half portion abutting against the inner surface of the recess W7, and the lower half portion of the ball is subjected to the surface tension due to the abutting, resulting in a high sphericity. A clean ball a2 without a core is produced concentrically with the axis of the wire a (FIG. 1- (b)).

【００１６】同時に、ボール形成時の熱がワイヤａ長さ
方向へ伝わる以前にキャピラリW4に伝達して吸収され
る。よって、ボール形成時の熱により組織が粗大化する
領域a3が短くなる。At the same time, heat during ball formation is transferred to and absorbed by the capillary W4 before being transferred in the length direction of the wire a. Therefore, the region a3 in which the structure is coarsened by the heat during ball formation is shortened.

【００１７】このようにして得られたボールa2を用い
て、半導体素子のチップ電極と基板上の外部リードとを
接続する。The ball a2 thus obtained is used to connect the chip electrode of the semiconductor element and the external lead on the substrate.

【００１８】ワイヤレスボンディング法においては図１
に示すように、上記ボールa2を半導体素子のチップ電極
（又は基板の外部リード）Ｘ上に供給してバンプ電極Ｚ
を形成する。即ち、キャピラリW4を下降させて金属ワイ
ヤａ先端に形成されたボールa2をチップ電極上のパッド
部に接合させ、その状態でキャピラリW4を引き上げるこ
とにより、ボールa2の根本部で金属ワイヤａから切断さ
れてバンプ電極Ｚが形成される。In the wireless bonding method, FIG.
, The ball a2 is supplied onto the chip electrode (or the external lead of the substrate) X of the semiconductor element to provide the bump electrode Z.
To form. That is, the capillary W4 is lowered to bond the ball a2 formed at the tip of the metal wire a to the pad portion on the chip electrode, and then the capillary W4 is pulled up in this state to cut the ball a2 from the metal wire a. Thus, the bump electrode Z is formed.

【００１９】上記ワイヤａの切断は、Pb-Sn ，Ｓｎ系の
金属ワイヤａでは急冷凝固法により作製することで格子
欠陥の導入，結晶粒の微細化，非平衡相の生成，元素相
互間の強制固溶などが生じ、この金属ワイヤａによりボ
ールa2を加熱形成した際に、ボール根本部において前記
非平衡相の消失，元素相互間の強制固溶の解放，格子欠
陥の解放，結晶粒の粗大化などが生じ、その部分（ボー
ル根本部）の引っ張り強度が減少し、キャピラリW4によ
りワイヤａを引き上げるだけでボールa2がその根本部で
降伏，破断することによって起こる。また、Pb-Sn ，Ｓ
ｎ系以外のワイヤについても、特開平4-12543 号公報に
開示される添加元素の種別及びその含有率の範囲によっ
て、前記同様のボール切断作用が得られる。The cutting of the wire a is carried out by the rapid solidification method for the Pb-Sn, Sn-based metal wire a, so that lattice defects are introduced, crystal grains are refined, non-equilibrium phases are formed, and elements are separated from each other. When the ball a2 is heated and formed by the metal wire a due to forced solid solution, the nonequilibrium phase disappears at the root of the ball, the forced solid solution between elements is released, the lattice defects are released, and the crystal grains Coarsening occurs, the tensile strength of that portion (ball root portion) decreases, and the ball a2 yields and breaks at its root portion only by pulling up the wire a by the capillary W4. In addition, Pb-Sn, S
With respect to wires other than the n-type wire, the same ball cutting action as described above can be obtained depending on the type of the additive element and the range of the content ratio disclosed in Japanese Patent Laid-Open No. 4-12543.

【００２０】次に、上記バンプ電極Ｚを、外部リード
（又はチップ電極）に直接接着させることにより、フィ
リップチップボンディング型の半導体装置が形成され
る。また、上記バンプ電極ＺをＴＡＢテープのリードに
接続すれば、テープキャリアボンディング型の半導体装
置が形成される。Next, the bump electrode Z is directly adhered to the external lead (or chip electrode) to form a Philip chip bonding type semiconductor device. If the bump electrode Z is connected to the lead of the TAB tape, a tape carrier bonding type semiconductor device is formed.

【００２１】この時、ワイヤａにおける組織の粗大化領
域a3を短くしたことからボールa2を切断した際のネック
高さa4が従来に比して極めて短くなると共に、真球度の
高いきれいなボールa2によりバンプ電極Ｚが形成される
ことから、接合強度が高く且つ導通不良などを引き起こ
す虞れのないバンプ接続がなされ、信頼性の高い半導体
装置の提供が可能になる。At this time, since the coarse area a3 of the structure of the wire a is shortened, the neck height a4 when the ball a2 is cut is much shorter than the conventional one, and a clean ball a2 having a high sphericity is obtained. Since the bump electrode Z is formed by this, bump connection with high bonding strength and without fear of causing conduction failure can be made, and a highly reliable semiconductor device can be provided.

【００２２】ワイヤボンディング法においては、図示し
ないが、上記のように作製されたボールa2をチップ電極
に圧着して接着せしめた後にループ状に外部リードまで
導いて該外部リードに圧着，切断することにより、チッ
プ電極と外部リードを接続させて半導体装置を形成す
る。In the wire bonding method, although not shown, the ball a2 produced as described above is pressure-bonded to the chip electrode to be adhered thereto, and then is led to the external lead in a loop shape and pressure-bonded and cut to the external lead. Thus, the semiconductor device is formed by connecting the chip electrode and the external lead.

【００２３】この時、前述の如くワイヤａにおける組織
の粗大化領域a3を短くしたことから、ボールa2をチップ
電極に接着せしめた後のループ形成においてそのループ
高さが低くなると共に、真球度の高いきれいなボールa2
により接合強度が高く且つ導通不良などを引き起こす虞
れのない接続がなされ、信頼性が高く、しかもＬＳＩパ
ッケージの小型，薄型化等の要求を満足し得る半導体装
置の提供が可能になる。At this time, since the coarsened region a3 of the structure of the wire a is shortened as described above, the loop height becomes low in the loop formation after the ball a2 is adhered to the chip electrode, and the sphericity is increased. High clean ball a2
As a result, it is possible to provide a semiconductor device which has a high bonding strength and which is free from the possibility of causing a conduction failure or the like, has high reliability, and which can satisfy the requirements for a small and thin LSI package.

【００２４】尚、ワイヤボンディング法に用いる金属ワ
イヤａは、急冷凝固法以外の周知な製法により作製した
もの、または、急冷凝固法により作製する特開平2-2162
8 号公報に開示される合金ワイヤ等を使用することがで
きる。The metal wire a used in the wire bonding method is manufactured by a known manufacturing method other than the rapid solidification method, or is manufactured by the rapid solidification method.
The alloy wire or the like disclosed in Japanese Patent No. 8 can be used.

【００２５】[0025]

【発明の効果】本発明に係るボール形成方法は以上説明
したように構成したので、Ａｕ以外の酸化し易い金属元
素からなるワイヤを用いても、ワイヤ導出口の内面形状
を利用して真球状のきれいなボールを作製できる。同時
に、ボール形成時の熱をボンダで吸収してワイヤ組織の
粗大化領域を短くし、ワイヤレスボンディングにおいて
はバンプ形成時のネック切れ高さを低くし得、ワイヤボ
ンディングにおいてはループ形成時の低ループ化が図れ
る。Since the ball forming method according to the present invention is configured as described above, even if a wire made of a metal element other than Au which is easily oxidized is used, the inner surface shape of the wire lead-out port is used to obtain a true spherical shape. You can make beautiful balls. At the same time, the bonder absorbs the heat during ball formation to shorten the coarse area of the wire structure, which can reduce the neck break height during bump formation in wireless bonding and the low loop during loop formation in wire bonding. Can be realized.

【００２６】従って、半導体素子のチップ電極と基板上
の外部リードとを、高い接合強度をもって導通不良など
を引き起こす虞れなく接続して、信頼性の高いワイヤボ
ンディング型，ワイヤレスボンディング型の半導体装置
を提供できる。またワイヤボンディング型においてはル
ープ形状の低ループ化により、ＬＳＩパッケージの小
型，薄型化の促進に寄与するなど、多くの効果を奏す
る。Therefore, the chip electrode of the semiconductor element and the external lead on the substrate are connected to each other with high bonding strength without fear of causing conduction failure, and a highly reliable wire bonding type or wireless bonding type semiconductor device is obtained. Can be provided. Further, in the wire bonding type, by reducing the loop shape, many effects can be achieved, such as contributing to promotion of miniaturization and thinning of the LSI package.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明に係るボール形成方法の一実施例を示す
断面図。FIG. 1 is a sectional view showing an embodiment of a ball forming method according to the present invention.

【図２】ワイヤボンダの側面図。FIG. 2 is a side view of the wire bonder.

【図３】従来の形成方法を示す斜視図。FIG. 3 is a perspective view showing a conventional forming method.

【図４】従来の形成方法を示す断面図。FIG. 4 is a cross-sectional view showing a conventional forming method.

【符号の説明】[Explanation of symbols]

ａ：金属ワイヤ a1：ワイヤ先端
a2：ボール a3：ワイヤ組織の粗大化領域 a4：ネック切れ高さ Ｗ：ワイヤボンダ W4：キャピラリ
W5：ワイヤ挿通路 W6：導出口 W7：凹部a: Metal wire a1: Wire tip
a2: Ball a3: Coarse area of wire structure a4: Neck breaking height W: Wire bonder W4: Capillary
W5: Wire insertion passage W6: Outlet W7: Recess

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】ワイヤボンダにおけるワイヤ挿通路の先端
導出口から突出する金属ワイヤ先端を還元ガス雰囲気中
にて加熱してボールを作製する方法であって、前記導出
口内面に形成した略半球形状の凹部内にてワイヤ先端を
加熱，溶融せしめてボールを作製することを特徴とする
金属ワイヤにおけるボールの形成方法。1. A method for producing a ball by heating the tip of a metal wire projecting from a lead-out port of a wire insertion passage in a wire bonder in a reducing gas atmosphere, the ball having a substantially hemispherical shape formed on the inner surface of the lead-out port. A method for forming a ball in a metal wire, characterized in that the tip of the wire is heated and melted in the recess to produce a ball.
JP34582492A 1992-12-25 1992-12-25 Method of forming ball on metal wire Expired - Lifetime JP3210456B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34582492A JP3210456B2 (en) 1992-12-25 1992-12-25 Method of forming ball on metal wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34582492A JP3210456B2 (en) 1992-12-25 1992-12-25 Method of forming ball on metal wire

Publications (2)

Publication Number Publication Date
JPH06196522A true JPH06196522A (en) 1994-07-15
JP3210456B2 JP3210456B2 (en) 2001-09-17

Family

ID=18379227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34582492A Expired - Lifetime JP3210456B2 (en) 1992-12-25 1992-12-25 Method of forming ball on metal wire

Country Status (1)

Country Link
JP (1) JP3210456B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1317751C (en) * 2005-01-12 2007-05-23 哈尔滨工业大学 Production of direct brazing filler metal button by double electrothermal filament smelting and cutting method
CN105755453A (en) * 2016-05-12 2016-07-13 重庆理工大学 Method for preparing geothermal water corrosion preventing nano chemical composite plated layer
JP2017132139A (en) * 2016-01-28 2017-08-03 株式会社沖データ Optical head, image forming apparatus, and image reading apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1317751C (en) * 2005-01-12 2007-05-23 哈尔滨工业大学 Production of direct brazing filler metal button by double electrothermal filament smelting and cutting method
JP2017132139A (en) * 2016-01-28 2017-08-03 株式会社沖データ Optical head, image forming apparatus, and image reading apparatus
CN105755453A (en) * 2016-05-12 2016-07-13 重庆理工大学 Method for preparing geothermal water corrosion preventing nano chemical composite plated layer

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