JPH0428136B2 - - Google Patents

Info

Publication number
JPH0428136B2
JPH0428136B2 JP59098484A JP9848484A JPH0428136B2 JP H0428136 B2 JPH0428136 B2 JP H0428136B2 JP 59098484 A JP59098484 A JP 59098484A JP 9848484 A JP9848484 A JP 9848484A JP H0428136 B2 JPH0428136 B2 JP H0428136B2
Authority
JP
Japan
Prior art keywords
wire
bonding
ball
cylindrical cover
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59098484A
Other languages
Japanese (ja)
Other versions
JPS60244034A (en
Inventor
Hideo Ichimura
Masamitsu Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59098484A priority Critical patent/JPS60244034A/en
Publication of JPS60244034A publication Critical patent/JPS60244034A/en
Publication of JPH0428136B2 publication Critical patent/JPH0428136B2/ja
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/788—Means for moving parts
    • H01L2224/78801—Lower part of the bonding apparatus, e.g. XY table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00015—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
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    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To maintain the circumferential part of a ball in a reducing or inert atmosphere during the period between the time when the ball is formed and the point of bonding by a method wherein reducing or inert gas is jetted into a cylinder from the side face of the cylindrical cover which is positioned enveloping a capillary. CONSTITUTION:A cylindrical cover 1 is fixed to a bonding head or an X-Y table, it is electrically insulated and constituted in such a manner that it envelopes a capillary 2. A gas sucking hole 3 is provided on the side face of the cylindrical cover 1, gas is injected, and inside the cylindrical cover 1 is maintained in a reducing atmosphere or an inert atmosphere. Accordingly, as the oxidization of the ball 7, which is formed when it is fused by the heat of electric discharge, is prevented and an excellent and stabilized bonding can be performed at all times even when the wire other than a gold wire such as an aluminum wire and a copper wire are used.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、ワイヤボンデイング用雰囲気形成装
置に関するものであつて、更に詳しくはアルミニ
ウムまたは銅を用いたワイヤボンデイングにおい
て、放電によりワイヤ先端にボールを形成する際
の酸化を防ぐため、還元雰囲気あるいは不活性雰
囲気を形成する装置に関する。Detailed Description of the Invention [Technical Field of the Invention] The present invention relates to an atmosphere forming device for wire bonding, and more specifically, in wire bonding using aluminum or copper, forming a ball at the tip of a wire by electric discharge. It relates to an apparatus for forming a reducing atmosphere or an inert atmosphere to prevent oxidation during processing.

〔従来技術〕[Prior art]

ダイボンデイングされた半導体チツプの電極薄
膜とリードフレームを結ぶワイヤボンデイングで
は、金線を用いるのが一般的であるが、近年原価
低減のためにアルミニウム線や銅線を用いる試み
がなされている、しかし、ボールボンデイングに
おいては、トーチ電極との放電によりワイヤ先端
にボールを形成する際に酸化するため、良好で安
定したボンデイングを行うにはワイヤ先端部を還
元雰囲気あるいは不活性雰囲気に保つ必要があ
る。 Gold wire is commonly used in wire bonding to connect the electrode thin film of a die-bonded semiconductor chip to the lead frame, but in recent years attempts have been made to use aluminum wire or copper wire to reduce costs. In ball bonding, oxidation occurs when a ball is formed at the tip of the wire due to discharge with the torch electrode, so it is necessary to maintain the tip of the wire in a reducing atmosphere or inert atmosphere in order to perform good and stable bonding.

従来、このための還元雰囲気あるいは不活性雰
囲気を形成する装置としては、キヤピラリにガス
噴射装置を取付けたものがある。しかしこの装置
では、ワイヤ先端に作られるボールの下面まで十
分に還元雰囲気あるいは不活性雰囲気を保つのが
困難であるのに加えて、キヤピラリの重量が増加
するため、特に超音波熱圧着方式のボンデイング
では、超音波ホーンの先端負荷増大により振動モ
ードが変化してボンデイングが不安定になり易い
といつた欠点がある。 Conventionally, as a device for forming a reducing atmosphere or an inert atmosphere for this purpose, there is a device in which a gas injection device is attached to a capillary. However, with this device, it is difficult to maintain a sufficiently reducing or inert atmosphere to the underside of the ball formed at the tip of the wire, and the weight of the capillary increases, so it is especially difficult to maintain a sufficiently reducing or inert atmosphere to the underside of the ball formed at the tip of the wire. However, there is a drawback that the vibration mode changes due to an increase in the load on the tip of the ultrasonic horn, which tends to make bonding unstable.

また、トーチ電極外壁面に沿つて還元ガスある
いは不活性ガスを導くことにより、放電空間を還
元雰囲気あるいは不活性雰囲気に保つ装置があ
る。しかしこの装置では、トーチ電極が振り込ま
れている時にしか雰囲気を形成することができな
いという欠点がある。 There is also a device that maintains the discharge space in a reducing atmosphere or inert atmosphere by guiding reducing gas or inert gas along the outer wall surface of the torch electrode. However, this device has the disadvantage that an atmosphere can only be created when the torch electrode is inserted.

さらに、還元ガスあるいは不活性ガスを充満さ
せたチヤンバーでヘツド空間全体を囲む方法もあ
る。しかしこの方法では、密閉性が悪いのに加
え、チヤンバーの構造が複雑になる欠点がある。 Another method is to surround the entire head space with a chamber filled with reducing gas or inert gas. However, this method has the disadvantage that it has poor sealing performance and the structure of the chamber is complicated.

〔発明の概要〕[Summary of the invention]

本発明は、上記のような従来技術の欠点を除去
し、ボール形成時からボンデイング点に至るまで
ワイヤ先端部を還元雰囲気あるいは不活性雰囲気
に保つことを目的とするものであつて、その骨子
とするところは、ボールボンデイング装置のボン
デイングヘツドあるいはＸ，Ｙテーブルに固定さ
れた円筒カバーをキヤピラリを包み込むように置
き、該円筒カバーの側面から還元性あるいは不活
性ガスを円筒内に噴出させるという簡単な構造に
より、ボール形成時からボンデイング点に至るま
でボール周辺部を還元あるいは不活性雰囲気に保
つようにしたワイヤボンデイング用雰囲気形成装
置に関するものである。 The present invention aims to eliminate the above-mentioned drawbacks of the prior art and maintain the tip of the wire in a reducing atmosphere or inert atmosphere from the time of ball formation to the bonding point. The process is as simple as placing a cylindrical cover fixed to the bonding head of the ball bonding machine or the X, Y table so as to enclose the capillary, and then blowing reducing or inert gas into the cylinder from the side of the cylindrical cover. The present invention relates to an atmosphere forming apparatus for wire bonding which is structured to maintain a reducing or inert atmosphere around the ball from the time of ball formation to the bonding point.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明装置の一実施例を第１図により説
明する。第１図ａはボール形成時を、第１図ｂは
ボンデイング時をそれぞれ示す。図中の符号１は
本発明で重要な円筒カバーであり、図のようにボ
ンデイングヘツドあるいはＸ，Ｙテーブルに固定
し、電気的に絶縁されていて、キヤピラリ２を包
み込むように構成されている。該円筒カバー１の
側面にはガス吸入孔３が設けてあり、ここからガ
スを注入することにより、円筒カバー１内を還元
雰囲気あるいは不活性雰囲気に保つ。また側面に
は、トーチ電極４が出入りする電極穴５を設けて
ある。 An embodiment of the apparatus of the present invention will be described below with reference to FIG. FIG. 1a shows the state during ball formation, and FIG. 1b shows the state during bonding. Reference numeral 1 in the figure is a cylindrical cover that is important in the present invention, and as shown in the figure, it is fixed to a bonding head or an X, Y table, is electrically insulated, and is configured to wrap around a capillary 2. A gas suction hole 3 is provided on the side surface of the cylindrical cover 1, and by injecting gas through the gas suction hole 3, the inside of the cylindrical cover 1 is maintained in a reducing atmosphere or an inert atmosphere. Furthermore, an electrode hole 5 is provided on the side surface, through which the torch electrode 4 enters and exits.

次に、上記の本発明装置の動作について説明す
る。まず、キヤピラリ２の先端が円筒カバー１の
上口部から出ない位置まで上昇した後、トーチ電
極４が電極穴５より振り込まれ、ワイヤ６の先端
との間で放電を起こすことによりボール７が形成
される。その後トーチ電極４が円筒カバー１の外
部に退避する。次いで、キヤピラリ２が降下し、
ボール７を半導体チツプ面８に押しつけ熱圧着あ
るいは超音波熱圧着により接合する。 Next, the operation of the above device of the present invention will be explained. First, after the tip of the capillary 2 rises to a position where it does not come out from the upper opening of the cylindrical cover 1, the torch electrode 4 is inserted through the electrode hole 5, and the ball 7 is caused to generate electric discharge between it and the tip of the wire 6. It is formed. Thereafter, the torch electrode 4 is retracted to the outside of the cylindrical cover 1. Then, capillary 2 descends,
The ball 7 is pressed against the semiconductor chip surface 8 and bonded by thermocompression bonding or ultrasonic thermocompression bonding.

従つて、ワイヤ先端部を、ボール形成時はもと
より、円筒カバー１の下口部から流出するガスに
よりボンデイング点直前まで、還元雰囲気あるい
は不活性雰囲気に保つことができ、放電により加
熱・溶融して形成されるボール７の酸化を防くた
め、金線以外の例えばアルミニウム線や銅線を用
いても常に良好で安定したボンデイングが可能に
なる。また、本発明装置は構造が簡単なのに加え
て、円筒カバー１は水平面内を移動するだけで上
下方向には動かないため、少ないガス消費量で効
率よく雰囲気を形成することができる。 Therefore, the tip of the wire can be kept in a reducing atmosphere or an inert atmosphere not only during the formation of the ball but also until just before the bonding point by the gas flowing out from the lower opening of the cylindrical cover 1, so that the tip is heated and melted by electric discharge. In order to prevent the formed ball 7 from being oxidized, good and stable bonding can always be achieved even if a wire other than gold wire, such as aluminum wire or copper wire, is used. Furthermore, the device of the present invention has a simple structure, and since the cylindrical cover 1 only moves in the horizontal plane and does not move in the vertical direction, it is possible to efficiently create an atmosphere with less gas consumption.

第２図は本発明の他の実施例を示す。ここでは
円筒カバー１は二重構造になつており、ガス吸入
孔３から注入されたガスは中空部９に充満し、内
壁１０に設けられた複数個の噴出口１１から円筒
カバー１の内部に噴き出す構成にしてある。 FIG. 2 shows another embodiment of the invention. Here, the cylindrical cover 1 has a double structure, and the gas injected from the gas suction hole 3 fills the hollow part 9 and flows into the cylindrical cover 1 from a plurality of jet ports 11 provided on the inner wall 10. It is configured to gush out.

この実施例装置の場合は、ワイヤ先端部により
均一な還元雰囲気あるいは不活性雰囲気を形成す
ることができる。なお、円筒カバー１の上口部か
らガスが流出するのを防ぐため、上口部にフラン
ジ１２を設けてもよい、また、ボール７が円筒カ
バー１の下口部から出てボンデイング点に達する
までのボール７周辺部のガス濃度を上げるため
に、噴出口１１の一部あるいは全部を下向きに設
けて、下口部からのガス流出量を増やしてもよ
い。 In the case of the device of this embodiment, a uniform reducing atmosphere or inert atmosphere can be formed at the tip of the wire. In addition, in order to prevent gas from flowing out from the upper opening of the cylindrical cover 1, a flange 12 may be provided at the upper opening, and the ball 7 comes out from the lower opening of the cylindrical cover 1 and reaches the bonding point. In order to increase the gas concentration around the ball 7, part or all of the spout 11 may be provided facing downward to increase the amount of gas flowing out from the lower opening.

〔発明の効果〕〔Effect of the invention〕

以上のように、本発明によれば金線以外のワイ
ヤ、例えばアルミニウム線や銅線を用いても良好
で安定したワイヤボンデイングを行うことがで
き、半導体製造コストの大幅な低減が可能とな
る。 As described above, according to the present invention, good and stable wire bonding can be performed even when wires other than gold wires, such as aluminum wires and copper wires, are used, and semiconductor manufacturing costs can be significantly reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第１図ａ，ｂは本発明の一実施例による雰囲気
形成装置を示す断面図、第２図は本発明の他の実
施例を示す断面図である。 １……円筒カバー、２……キヤピラリ、３……
ガス吸入孔、４……トーチ電極、５……電極穴、
６……ワイヤ、７……ボール、８……半導体チツ
プ面、９……中空部、１０……内壁、１１……噴
出口、１２……フランジ。なお、図中同一符号は
同一、又は相当部分を示す。 1A and 1B are cross-sectional views showing an atmosphere forming apparatus according to one embodiment of the present invention, and FIG. 2 is a cross-sectional view showing another embodiment of the present invention. 1... Cylindrical cover, 2... Capillary, 3...
Gas suction hole, 4...torch electrode, 5...electrode hole,
6... wire, 7... ball, 8... semiconductor chip surface, 9... hollow part, 10... inner wall, 11... spout, 12... flange. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] １ ワイヤの先端にトーチ電極からの放電により
ボールを形成してボンデイングを行うボールボン
デイング装置に、該装置のボンデイングヘツドあ
るいはＸ，Ｙテーブルに固定されていて、上下す
るキヤピラリを包み込むように位置する電気的に
絶縁された円筒カバーを設け、該円筒カバーの内
部に還元ガスあるいは不活性ガスを注入してワイ
ヤ先端部を常に還元雰囲気あるいは不活性雰囲気
に保つように構成したことを特徴とするワイヤボ
ンデイング用雰囲気形成装置。1. In a ball bonding device that performs bonding by forming a ball at the tip of a wire by discharging from a torch electrode, there is an electric wire that is fixed to the bonding head of the device or the X, Y table and is positioned so as to wrap around the capillary that moves up and down. Wire bonding characterized in that a cylindrical cover is provided which is insulated, and a reducing gas or an inert gas is injected into the cylindrical cover so that the tip of the wire is always kept in a reducing atmosphere or an inert atmosphere. atmosphere forming device.
JP59098484A 1984-05-18 1984-05-18 Atmosphere forming device for wire bonding Granted JPS60244034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59098484A JPS60244034A (en) 1984-05-18 1984-05-18 Atmosphere forming device for wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59098484A JPS60244034A (en) 1984-05-18 1984-05-18 Atmosphere forming device for wire bonding

Publications (2)

Publication Number Publication Date
JPS60244034A JPS60244034A (en) 1985-12-03
JPH0428136B2 true JPH0428136B2 (en) 1992-05-13

Family

ID=14220921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59098484A Granted JPS60244034A (en) 1984-05-18 1984-05-18 Atmosphere forming device for wire bonding

Country Status (1)

Country Link
JP (1) JPS60244034A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012244093A (en) * 2011-05-24 2012-12-10 Renesas Electronics Corp Manufacturing method of semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
JP2008034811A (en) * 2006-07-03 2008-02-14 Shinkawa Ltd Ball forming device in wire bonding device, and bonding device
US7658313B2 (en) * 2006-07-03 2010-02-09 Kabushiki Kaisha Shinkawa Ball forming device in a bonding apparatus and ball forming method
US7628307B2 (en) * 2006-10-30 2009-12-08 Asm Technology Singapore Pte Ltd. Apparatus for delivering shielding gas during wire bonding
JP4392015B2 (en) * 2006-11-21 2009-12-24 株式会社カイジョー Wire bonding equipment
WO2009152066A2 (en) * 2008-06-10 2009-12-17 Kulicke Adn Sofa Industries, Inc. Gas delivery system for reducing oxidation in wire bonding operations
US8186562B1 (en) * 2010-12-14 2012-05-29 Asm Technology Singapore Pte Ltd Apparatus for increasing coverage of shielding gas during wire bonding
WO2013111452A1 (en) * 2012-01-26 2013-08-01 株式会社新川 Oxidation preventing gas spray unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012244093A (en) * 2011-05-24 2012-12-10 Renesas Electronics Corp Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS60244034A (en) 1985-12-03

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