JPS5974640A - Bonder for wire - Google Patents

Bonder for wire

Info

Publication number
JPS5974640A
JPS5974640A JP57184578A JP18457882A JPS5974640A JP S5974640 A JPS5974640 A JP S5974640A JP 57184578 A JP57184578 A JP 57184578A JP 18457882 A JP18457882 A JP 18457882A JP S5974640 A JPS5974640 A JP S5974640A
Authority
JP
Japan
Prior art keywords
shield
wire
gas
electrode
cylinder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57184578A
Other languages
Japanese (ja)
Inventor
Hiromichi Suzuki
博通 鈴木
Hiroshi Mikino
三木野 博
Susumu Okikawa
進 沖川
Wahei Kitamura
北村 和平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57184578A priority Critical patent/JPS5974640A/en
Publication of JPS5974640A publication Critical patent/JPS5974640A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/78268Discharge electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053Bonding environment
    • H01L2224/85054Composition of the atmosphere
    • H01L2224/85075Composition of the atmosphere being inert
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent the mixing of air into a necessary gas by the curtain action of an inert-gas flow, to form a ball of the high degree of vacuum and to improve bondability by forming a section on the capillary intruding side of a shield cylinder in double structure and flowing an inert gas to the inside. CONSTITUTION:A bonding head 11 is loaded on an XY table 10, one end of a bonding arm 12 is supported to the head 11 in a vertically vibratory shape, and a capillary 13 is fixed at the nose of the arm 12. An approximately L-shaped electrode 19 is arranged where adjacent to the capillary 13, and the discharge section 20 of a lower side is vibrated as a nose. The electrode 19 is formed to a hollow-pipe shape, a tube 21 communicated with a gas source is connected at an end section on the axial support 18 side, the electrode 19 is supplied with the necessary gas. A nozzle 23 is formed at the nose of the discharge section 20, a shield inner cylinder 24 is set up tightly so as to cover the discharge section 20 of the electrode 19, and the cylinder 24 is covered with a shield outer cylinder 25. The inert gas is flowed through the inner cylinder 24, and the mixing of air into the necessary gas is prevented.

Description

【発明の詳細な説明】 本発明はボンダビリティの良好なワイヤボンダに関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonder with good bondability.

半導体装置の製造工程の一つに、リードフレームに固着
した半導体素子ペレットとリードフレームとを電気的に
接続する所謂ワイヤボンディング工程がある。そして、
このワイヤボンディングに用いるワイヤとしてAu線や
A4.lj!が使用されているが、近年では低価格なA
t線が採用されている。また、At@’5使用した場合
にも、所謂超音波ボンディング法ではワイヤボンディン
グ方向に制約を受けるためボンディング作業が面倒にな
りかつワイヤボンダの構造が複雑になるという不具合が
あり、熱圧着法(ネイルヘッドボンディング法)が採用
されるに到っている。
One of the manufacturing processes for semiconductor devices is a so-called wire bonding process in which a semiconductor element pellet fixed to a lead frame is electrically connected to the lead frame. and,
Wires used for this wire bonding include Au wire and A4. lj! However, in recent years, the low-priced A
T-line is used. Furthermore, even when At@'5 is used, the so-called ultrasonic bonding method is constrained in the wire bonding direction, which makes the bonding work troublesome and the structure of the wire bonder complicated. head bonding method) has come to be adopted.

即ち、このワイヤボンディング法は、本出願人が先に提
案しているところであり、第1図に示すようにボンディ
ングアーム1の先端に取着したキャピラリ2に挿通させ
たAt線3の先端を電極4に対向位置させ、かつ電極4
に一体的に設けたシールド筒5にてAt線先端を覆った
上でシールド筒5内を所定のガス(例えばH2ガス)雰
囲気に保ち、しかる状態でAt線3と電極4との間に高
電圧を印加して放電を発生させることによりAt線先端
にボールを形成するようにしたものである。
That is, this wire bonding method was previously proposed by the present applicant, and as shown in FIG. 4, and the electrode 4
The tip of the At wire is covered with a shield tube 5 integrally provided in the shield tube 5, and the inside of the shield tube 5 is maintained in a predetermined gas atmosphere (for example, H2 gas), and in this state, a high temperature is created between the At wire 3 and the electrode 4. A ball is formed at the tip of the At wire by applying a voltage and generating a discharge.

ボール形成後はAu線の場合と同様に熱圧着してAt線
をペレットやリードフレームに接続することは言うまで
もない。
Needless to say, after the ball is formed, the At wire is connected to the pellet or lead frame by thermocompression bonding in the same manner as in the case of the Au wire.

ところで、本発明者の実験によると、At線3の先端に
形成されるボールの真球度が良い程ワイヤボンディング
の接続強度等の信頼性が向上することが判明しており、
また、真球度の良いボールを形成するためには放電時に
おけるAt線先端のN2ガス雰囲気を一定状態に保つこ
とが重要であることも判っている。
By the way, according to the inventor's experiments, it has been found that the better the sphericity of the ball formed at the tip of the At wire 3, the better the reliability of the connection strength of wire bonding, etc.
It has also been found that in order to form a ball with good sphericity, it is important to keep the N2 gas atmosphere at the tip of the At wire constant during discharge.

しかしながら、前述したような従来装置にあっては、シ
ールド筒5の一部に切欠きゃ穴を形成し、これら切欠き
ゃ穴を通してキャピラリ2をシールド筒内へ侵入位置さ
せる構成を用いているため、キャピラリと切欠き、穴と
の間の隙間から外気(02等)がシールド筒内に侵入し
易(、シールド筒内、つまりAt線先端のN2ガス雰囲
気を一定に保持することが難かしいという問題がある。
However, in the conventional device as described above, a notch hole is formed in a part of the shield tube 5, and the capillary 2 is inserted into the shield tube through the notch hole. Outside air (02, etc.) easily enters the shield cylinder through the gap between the shield cylinder, notch, and hole (there is a problem that it is difficult to maintain a constant N2 gas atmosphere inside the shield cylinder, that is, at the tip of the At wire). be.

特に、シールド筒は電極4と一体的に構成してボールの
形成時にはキャピラリ側方の退避位置からキャピラリ位
置にまで移動されるよう構成されているため、シールド
筒がキャピラリ位置に移動されかつ停止されたときには
所謂空気巻込み現象が発生して/−ルド筒内に空気とN
2ガスとの混合乱流を生じさせ、前述した真球度の高い
ボールを形成するための142ガス雰囲気の安定性が極
めて悪いものとなる。
In particular, since the shield cylinder is constructed integrally with the electrode 4 and is configured to be moved from a retracted position on the side of the capillary to the capillary position when forming a ball, the shield cylinder is moved to the capillary position and stopped. When this happens, a so-called air entrainment phenomenon occurs, causing air and nitrogen to enter the cylinder.
This causes a turbulent flow of mixture with the two gases, and the stability of the 142 gas atmosphere for forming the ball with high sphericity described above becomes extremely poor.

したがって本発明の目的は、シールド筒内におけるAt
線先端のガス雰囲気を安定状態に保持し、これにより真
球度の高いボールを形成してボンダビリティ全向上する
ことができるワイヤボンダを提供することにある。
Therefore, an object of the present invention is to
It is an object of the present invention to provide a wire bonder capable of keeping the gas atmosphere at the tip of the wire in a stable state, thereby forming a ball with high sphericity and completely improving bondability.

このような目的を達成するために本発明はシールド筒の
キャピラリ侵入側の部位を二重構造とし、内部側に所要
のガスを逆流すると共に外部側に不活性ガスを通流し、
この不活性ガス流のカーテン作用によって所要ガス内へ
の空気の混入を防止さぜようとするものである。
In order to achieve such an object, the present invention has a double structure in the part of the shield cylinder on the capillary entry side, and allows the required gas to flow back inside and inert gas to flow outside.
This curtain effect of the inert gas flow is intended to prevent air from entering the required gas.

以下、本発明を図示の実施例により説明する。Hereinafter, the present invention will be explained with reference to illustrated embodiments.

第2図は本発明の一実施例のワイヤボンダであり、XY
テーブル10上に搭載したボンディングヘッド11には
上下揺動可能にボンディングアーム12を一端枢支し、
またこのアーム12の先端にはキャピラリ13を固着し
ている。このキャピラリ13には図外のスプールに捲回
したワイヤ、即ちAL線14を挿通し、At線の先端を
キャピラリ13の下方へ突出させている。前記キャピラ
リ13の下方にはボンディングステージ15を配設し、
このステージ15上にはワイヤボンディングが施される
半導体構体16がライン上を移動されてくるようになっ
ている。
FIG. 2 shows a wire bonder according to an embodiment of the present invention.
A bonding arm 12 is pivoted at one end to a bonding head 11 mounted on a table 10 so as to be able to swing up and down.
Further, a capillary 13 is fixed to the tip of this arm 12. A wire wound around a spool (not shown), that is, an AL wire 14 is inserted into the capillary 13, and the tip of the At wire is made to protrude below the capillary 13. A bonding stage 15 is arranged below the capillary 13,
On this stage 15, a semiconductor structure 16 to which wire bonding is to be performed is moved along a line.

一方、前記キャピラリ13の近傍位置には支持体17に
よってその上端を軸支18した略し字状の電極19を配
設し、下辺の放電部20を先端として全体を紙面と直角
方向に揺動できるようにしている。この電極19は第3
図に詳細を示すように全体を中空パイプ状に形成され、
軸支18側の端部には図外のガス源に連通するチーーブ
21を接続して電極内に所要のガス(本例ではN2ガス
)が供給される。また電極19の放電部20上側には複
数個のガス孔22金形成して内部に供給されたN2ガス
を噴出させる。更に、放電部20の先端は若干絞り加工
されてノズル23として構成している。そして、前記電
極19は放電部20を覆うようにしてシールド内筒24
を固設し、更にこのシールド内筒24を覆うようにして
断面略し字状のシールド外筒25を固設している。この
とき、第4図に断面構造を示すようにシールド内筒24
とシールド外筒25とは下側で密接するも両側から上側
にわたって両者間に空隙26を画成している。また、シ
ールド内筒24と外筒25の上面にはキャピラリ13侵
入用の穴27.28全形成している。なお、前記空隙2
6は先端側位置で開放される一方、基端側ではシールド
外筒25に接続したチーープ29全通して不活性なガス
(本例ではN2ガス)が供給されるようになっている。
On the other hand, an abbreviated-shaped electrode 19 whose upper end is pivotally supported 18 by a supporter 17 is disposed near the capillary 13, and the entire structure can be swung in a direction perpendicular to the plane of the paper with the discharge section 20 on the lower side as the tip. That's what I do. This electrode 19 is the third
The entire structure is shaped like a hollow pipe, as shown in detail in the figure.
A tube 21 communicating with a gas source (not shown) is connected to the end on the shaft support 18 side, and a necessary gas (N2 gas in this example) is supplied into the electrode. Further, a plurality of gas holes are formed on the upper side of the discharge portion 20 of the electrode 19 to blow out the N2 gas supplied inside. Furthermore, the tip of the discharge section 20 is slightly drawn to form a nozzle 23. The electrode 19 is arranged in a shield inner cylinder 24 so as to cover the discharge part 20.
A shield outer cylinder 25 having an oval-shaped cross section is further fixed to cover the shield inner cylinder 24. At this time, as shown in FIG. 4, the shield inner cylinder 24
Although the shield outer cylinder 25 and the shield outer cylinder 25 are in close contact with each other on the lower side, a gap 26 is defined between them from both sides to the upper side. In addition, holes 27 and 28 for the capillary 13 to enter are completely formed on the upper surfaces of the shield inner cylinder 24 and outer cylinder 25. Note that the void 2
6 is opened at the distal end position, while an inert gas (N2 gas in this example) is supplied through the entire cheep 29 connected to the shield outer cylinder 25 at the proximal end side.

以上の構成によれば、図示のように電極19を1方に揺
動位置した上でキャピラリ13を下動してキャピラリを
シールド外筒25およびシールド内筒24の穴28.2
7内に侵入させ、ht線14の先端をシールド内筒24
内に位置させてAt線14と電極19間に高電圧を印加
すれば、放電部20とA4線14先端との間に放電が発
生しそのエネルギーによってAt線先端にボールが形成
される。このとき、電極19内にN2ガス或いは他の還
元用ガスを供給すればN2ガスは放電部20のガス孔2
2かもシールド内筒24内に噴出されシールド内筒内、
つまりAt線の先端雰囲気をN2ガス雰囲気に保ってボ
ールの真球度を向上させる。
According to the above configuration, the capillary 13 is moved downward after the electrode 19 is swung to one side as shown in the figure, and the capillary is inserted into the hole 28.2 of the shield outer cylinder 25 and the shield inner cylinder 24.
7 and insert the tip of the HT wire 14 into the shield inner cylinder 24.
If a high voltage is applied between the At wire 14 and the electrode 19, a discharge will occur between the discharge portion 20 and the tip of the A4 wire 14, and the energy will form a ball at the tip of the At wire. At this time, if N2 gas or other reducing gas is supplied into the electrode 19, the N2 gas will flow through the gas hole 2 of the discharge section 20.
2 is also ejected into the shield inner cylinder 24 and inside the shield inner cylinder,
In other words, the sphericity of the ball is improved by keeping the atmosphere at the tip of the At wire in an N2 gas atmosphere.

これと同時に、チーーブ29′f:通してシールド外筒
25内にN2ガスを供給すると、N2ガスはシールド外
筒25と内筒24との間の空隙26を通流されることに
なり、これにより所謂カーテン作J’ll−発生させて
シールド内筒24とシールド外筒25との間を隔絶する
。したがって、シールド内筒24内のN2ガスが穴27
全通してシールド外筒側へ流出されるのが防止されると
共に、シールド外筒25外の空気が穴28.27全通し
てシールド内筒24内に流入されることも防止される。
At the same time, when N2 gas is supplied into the shield outer cylinder 25 through the tube 29'f, the N2 gas is forced to flow through the gap 26 between the shield outer cylinder 25 and the inner cylinder 24. A so-called curtain action is generated to isolate the shield inner cylinder 24 and the shield outer cylinder 25. Therefore, the N2 gas inside the shield inner cylinder 24 flows into the hole 27.
The air outside the shield outer cylinder 25 is prevented from passing completely through the holes 28 and 27 and flowing into the shield inner cylinder 24.

これにより、シールド内筒24内を安定したN2ガス雰
囲気に保持してボールの真球度を向上する。
This maintains a stable N2 gas atmosphere inside the shield inner cylinder 24 and improves the sphericity of the ball.

また、電極19が揺動された直後であってもN2ガスの
カーテン作用によって空気がシールド内筒内に侵入する
ことが防止できるので、空気の混入による乱流が生じる
こともない。この結果、電極の高速揺動によってもシー
ルド内筒内の雰囲気を安定に保持することが可能となり
、高速ワイヤボンディングに有効となる。
In addition, even immediately after the electrode 19 is swung, the curtain action of the N2 gas prevents air from entering the shield inner cylinder, so turbulence due to air intrusion does not occur. As a result, it becomes possible to stably maintain the atmosphere inside the shield cylinder even with high-speed rocking of the electrode, which is effective for high-speed wire bonding.

ここで、電極19内に供給したN2ガスは先端のノズル
2;3かも排出されるが、N2ガスの外気への放散に伴
なう環境の低下を防止するためにノズル23においてN
2ガスを燃焼させるようにしている。勿論、ノズル23
に排気チューブを接続して所定の処理装置へ導出するよ
うにしてもよい。
Here, the N2 gas supplied into the electrode 19 is also discharged from the nozzles 2 and 3 at the tip, but in order to prevent the environment from deteriorating due to the dissipation of the N2 gas into the outside air, the N2 gas is discharged from the nozzle 23.
It is designed to burn two gases. Of course, nozzle 23
It is also possible to connect an exhaust tube to the tube and lead it out to a predetermined processing device.

なお、ボール形成後は電極19f:上方へ揺動して放電
部をキャピラリ13の下方から退避させ、しかる上でボ
ンディングアーム12を作動してボールを半導体構体1
6上に圧着し、ワイヤボンディングを完了させることは
言うまでもない。
After the ball is formed, the electrode 19f swings upward to evacuate the discharge portion from below the capillary 13, and then the bonding arm 12 is actuated to attach the ball to the semiconductor structure 1.
Needless to say, the wire bonding is completed by crimping the wire bonding on the wire 6.

以上のように本発明のワイヤボンダによれば、シールド
筒を二重構造とし、内部に所要のガスを通流すると共に
外部に不活性ガスを通流し、この不活性ガスのカーテン
作用によって所要ガス内への空気の混入を防止している
ので、At線の先端におけるガス雰囲気を安定に保持で
き、これによりAt線に形成するボールの真球度を向上
してボンダビリティの向上を実現することができるとい
う効果を奏する。
As described above, according to the wire bonder of the present invention, the shield tube has a double structure, and the required gas is passed inside and the inert gas is passed outside, and the curtain action of this inert gas allows the required gas to be contained. Since the mixture of air is prevented, the gas atmosphere at the tip of the At wire can be maintained stably, which improves the sphericity of the ball formed on the At wire and improves bondability. It has the effect of being able to do it.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のワイヤボンダの一部の断面図、第2図は
本発明のワイヤボンダの全体構成図、第3図は要部の拡
大断面図、 第4図は第3図のAA線拡大断面図である。 11・・・ボンディングヘッド、12・・・ボンディン
グアーム、13・・・キャピラリ、14・・・At線、
16・・・半導体構体、19・・電極、20・・・放電
部、22−・・ガス孔、24・・・シールド内筒、25
・・・7−ルド外筒、26・・・空隙、27.28・・
穴。 代理人 弁理士  薄 1)利 幸イτ〉−2、第  
1  図
Fig. 1 is a cross-sectional view of a part of a conventional wire bonder, Fig. 2 is an overall configuration diagram of the wire bonder of the present invention, Fig. 3 is an enlarged sectional view of main parts, and Fig. 4 is an enlarged cross-section taken along the line AA in Fig. 3. It is a diagram. 11... Bonding head, 12... Bonding arm, 13... Capillary, 14... At wire,
16... Semiconductor structure, 19... Electrode, 20... Discharge part, 22-... Gas hole, 24... Shield inner cylinder, 25
...7-old outer cylinder, 26... air gap, 27.28...
hole. Agent Patent Attorney Susuki 1) Toshiyuki τ〉-2, No.
1 figure

Claims (1)

【特許請求の範囲】[Claims] 1 ボンディング用ワイヤとしてA4線を使用し、この
A4線の先端と電極の放電部との間に放電を発生してA
t線先端に熱圧着用のボールを形成するワイヤボンダで
あって、放電発生時に前記At線の先端を覆うようにし
て前記電極に取着されたシールド筒を有し、このシール
ド筒はAt線先端を覆うシールド内筒と、この外側に設
けたシールド外筒とで二重構造とし、シールド内筒内に
は所要のガスを通流させる一方、両筒の間には不活性ガ
スを通流し、この不活性ガスのカーテン作用によってシ
ールド内筒を外気と隔絶させるように構成したことを特
徴とするワイヤボンダ。
1 A4 wire is used as the bonding wire, and a discharge is generated between the tip of this A4 wire and the discharge part of the electrode.
This wire bonder forms a ball for thermocompression at the tip of the T wire, and has a shield tube attached to the electrode so as to cover the tip of the At wire when discharge occurs, and this shield tube is attached to the tip of the At wire. It has a double structure with a shield inner cylinder that covers the shield and an outer shield cylinder provided outside the shield, and while the required gas is passed through the shield inner cylinder, an inert gas is passed between the two cylinders. A wire bonder characterized in that the shield inner cylinder is isolated from the outside air by the curtain action of the inert gas.
JP57184578A 1982-10-22 1982-10-22 Bonder for wire Pending JPS5974640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57184578A JPS5974640A (en) 1982-10-22 1982-10-22 Bonder for wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57184578A JPS5974640A (en) 1982-10-22 1982-10-22 Bonder for wire

Publications (1)

Publication Number Publication Date
JPS5974640A true JPS5974640A (en) 1984-04-27

Family

ID=16155654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57184578A Pending JPS5974640A (en) 1982-10-22 1982-10-22 Bonder for wire

Country Status (1)

Country Link
JP (1) JPS5974640A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101003685B1 (en) * 2008-07-11 2010-12-23 엘에스산전 주식회사 Electrode for vacuum interrupter
WO2016021251A1 (en) * 2014-08-06 2016-02-11 株式会社カイジョー Bonding method and bonding device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101003685B1 (en) * 2008-07-11 2010-12-23 엘에스산전 주식회사 Electrode for vacuum interrupter
WO2016021251A1 (en) * 2014-08-06 2016-02-11 株式会社カイジョー Bonding method and bonding device
JP2016039221A (en) * 2014-08-06 2016-03-22 株式会社カイジョー Bonding method and bonding device
CN106463424A (en) * 2014-08-06 2017-02-22 华祥股份有限公司 Bonding method and bonding device
US10022821B2 (en) 2014-08-06 2018-07-17 Kaijo Corporation Bonding method and bonding device

Similar Documents

Publication Publication Date Title
US4998002A (en) Wire-bonding method, wire-bonding apparatus, and semiconductor device produced by the wire-bonding method
JP3996216B2 (en) Improved capillary and fine pitch ball bonding method
US8066170B2 (en) Gas delivery system for reducing oxidation in wire bonding operations
JPS58169918A (en) Wire bonder
US8096461B2 (en) Wire-bonding machine with cover-gas supply device
JP5916814B2 (en) Bonding method and bonding apparatus
US5152450A (en) Wire-bonding method, wire-bonding apparatus,and semiconductor device produced by the wire-bonding method
JP2008130825A (en) Wire bonding device
JPS5974640A (en) Bonder for wire
JPS60227432A (en) Ball forming device of bonding wire
JPH0428136B2 (en)
JPS6146034A (en) Wire bonder
JPS5966136A (en) Wire bonder
JPS6054446A (en) Wire bonding device
JPS61189652A (en) Semiconductor device
JPS59139637A (en) Wire bonder
JPH06196522A (en) Formation of ball in metal wire
JPH0737930A (en) Bonding device and bump formation
JPS61198737A (en) Wire bonding device
JPS61191040A (en) Torch device for wire bonding
JPS60211951A (en) Wire-bonding device
JPS61119053A (en) Wire-bonding method
JPH0325020B2 (en)
JPH01280330A (en) Semiconductor device
JPH0587976B2 (en)