JPS59139637A - Wire bonder - Google Patents

Wire bonder

Info

Publication number
JPS59139637A
JPS59139637A JP58012728A JP1272883A JPS59139637A JP S59139637 A JPS59139637 A JP S59139637A JP 58012728 A JP58012728 A JP 58012728A JP 1272883 A JP1272883 A JP 1272883A JP S59139637 A JPS59139637 A JP S59139637A
Authority
JP
Japan
Prior art keywords
wire
capillary
electrode
tip
collar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58012728A
Other languages
Japanese (ja)
Inventor
Michio Okamoto
道夫 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58012728A priority Critical patent/JPS59139637A/en
Publication of JPS59139637A publication Critical patent/JPS59139637A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To make sure set work for conditions and the situation of the formation of a ball easily and rapidly by forming a cover by a transparent material. CONSTITUTION:One end of a bonding arm 12 is supported pivotally to a bonding head 11 loaded on an X-Y table 10 in a vertically vibratory manner, and a capillary 13 is fixed at the nose of the arm 12. A wire wound on a spool, an Al wire 14, is inserted into the capillary 13, and the tip of the Al wire is projected to the lower section of the capillary. An approximately L-shaped hollow electrode 19, an upper end thereof is supported 18 axially by a supporter 17, is disposed at a position near to the capillary 13, and a discharge section 20 on the lower side of the electrode 19 can be vibrated in the direction rectangular to a paper surface. A shielding cylinder 22 consists of a cylindrical collar 24 made of a transparent material, such as a transparent resin, heat-resistant glass, etc. and disks 25, 26, which are each fixed at both ends of the collar 24 and seal both ends of the collar 24, and one disk 25 is supported to the discharge section 20 of the electrode 19 under the state of penetration.

Description

【発明の詳細な説明】 本発明はボンダビリティの良好なワイヤボンダに関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonder with good bondability.

半導体装置の製造工程の一つにリードフレームに固着し
た半導体素子ペレットとリードフレームと′！ｉｌ−電
気的に接続する所謂ワイヤボンディングエ桿がある。そ
して、このワイヤボンディングに用いるワイヤとしてＡ
ｕ１ｌＪやＡｔ線が使用されているが、近年では低価格
なＡｔａが採用されている。One of the manufacturing processes for semiconductor devices is the semiconductor element pellet fixed to the lead frame, the lead frame, and '! There is a so-called wire bonding rod for electrical connection. The wire used for this wire bonding is A
Although u1lJ and At wires are used, in recent years the low-cost Ata wire has been adopted.

オた、Ａｔ線を使用した場合にも、所謂超音波ボンディ
ング法ではワイヤボンディング方向に制約を受けるため
にボンディング作業が面倒になシかつワイヤボンダの構
造が複雑になるという不具合があり、したがって熱圧着
法（ネイルヘッドボンディング法）が採用されるに到っ
ている。Additionally, even when At wire is used, the so-called ultrasonic bonding method has the disadvantage that the bonding process is troublesome and the structure of the wire bonder becomes complicated due to restrictions on the wire bonding direction. method (nail head bonding method) has been adopted.

即ち、このワイヤボンディング法は、本出願人が先に提
案しているところでオシ、第１図に示すようにボンディ
ングアームｌの先端に取着したキャピラリ２に挿通させ
ｆＣｈｔ線３の先端ラミ極４に対向位置させ、かつ電極
４に一体的に設けたカバー５にてＡｔｉ！ｉｌ先端を包
囲した上でカバー５内を所定のガス（例えばＨ２ガヌ）
雰囲気に保ち、しかる状態でＡｔ線３と電極４との間に
高電圧を印加して放ｔａ−発生させることによυＡ４線
先端にボールを形成するようにしたものである。ボール
形成後はＡｕ１ｔＪの場合と同様に熱圧着してＡｔ線含
金ペレットリードフレームに接続することは言うまでも
ない。That is, this wire bonding method was previously proposed by the present applicant, and as shown in FIG. With a cover 5 located opposite to the electrode 4 and integrally provided with the electrode 4, the Ati! After surrounding the tip of the il, the inside of the cover 5 is filled with a predetermined gas (for example, H2 gas).
A ball is formed at the tip of the υA4 wire by maintaining the atmosphere in the atmosphere and applying a high voltage between the At wire 3 and the electrode 4 to generate Ta-. Needless to say, after the ball is formed, it is connected to the At wire metal-containing pellet lead frame by thermocompression bonding as in the case of Au1tJ.

ところで、本発明者の実験によると、Ａｔ線３の先端に
形成されるボールの真球度が良い程ワイヤボンディング
の接続強度等の信頼性が向上することが判明している。By the way, according to the experiments conducted by the present inventor, it has been found that the better the sphericity of the ball formed at the tip of the At wire 3, the higher the reliability of the connection strength of wire bonding, etc.

そして、この真球度の良いボールを形成するためには放
電時におけるｐ、ｔｇ）先端、つ１ヤカバ−５内のガス
濃度、温度等の雰囲気条件や放電エネルギを良好にコン
トロールし、またＡｔ線先端と電極との距離を好適に設
定する必要がある。In order to form a ball with good sphericity, atmospheric conditions such as p, tg) tip, gas concentration and temperature in the shaft cover 5 and discharge energy must be well controlled during discharge, and At. It is necessary to suitably set the distance between the wire tip and the electrode.

このため、ワイヤボンディング作業の前には前述した各
々の条件が最適となるように各条件を設定する作業が必
要とされている。しかしながら、前記した従来のワイヤ
ボンダにおっては、カバ５を夫々黒色ベーク材からなる
外筒６と内筒７とで形成して外筒６の一部にスリット８
を形成し、このスリット８全通してキャピラリ２及びＡ
ｊａ線３をカバ内へ侵入位置させる構成としているため
、条件設定としてワイヤ７と電極４の間隔の設定状態及
び形成されたボールの状態上外部から観察すること１は
難かしい。したがって、従来では各条件を変えてボール
を形成する度にカバを揺動作動させてキャピラリ位置か
ら退避させ、Ａ４線先端を露呈してボール全観察しなけ
ればならず、１＊ワイヤ７と電極４との間隔のＮ竪は、
カバ５をいちいち砲外して行なわねばならない等、条件
設定作業が極めて煩雑なものになるという問題が生じて
いる。Therefore, before the wire bonding work, it is necessary to set each of the above-mentioned conditions so that they become optimal. However, in the conventional wire bonder described above, the cover 5 is formed of an outer cylinder 6 and an inner cylinder 7 made of black baking material, and a part of the outer cylinder 6 has a slit 8.
The capillaries 2 and A are passed through the slit 8.
Since the JA wire 3 is inserted into the cover, it is difficult to observe from the outside due to the condition setting of the distance between the wire 7 and the electrode 4 and the state of the formed ball. Therefore, in the past, each time a ball was formed under different conditions, the cover had to be oscillated to retreat from the capillary position to expose the tip of the A4 wire and observe the entire ball. The N vertical distance from 4 is
A problem arises in that the condition setting work becomes extremely complicated, such as having to remove the cover 5 from the gun each time.

したがって本発明の目的はカバの外側からもＡｔ線先端
に形成されるボールの真球度を観察でき、これによシ条
件設定作業及びボール形成状況の′ａ認を容易にかつ迅
速に行なうことができるワイヤボンダを提供することに
ある。Therefore, an object of the present invention is to enable observation of the sphericity of the ball formed at the tip of the At wire from the outside of the cover, and thereby to easily and quickly perform condition setting work and confirmation of the state of ball formation. Our goal is to provide a wire bonder that can.

この目的を達成する几めに本発明はカバ會透明材料にで
形成するようにしたものである。In order to achieve this object, the present invention is made of a transparent material.

以下、本発明を図示の実施例によシ説明する。Hereinafter, the present invention will be explained with reference to illustrated embodiments.

第２図は本発明の一実施例のワイヤボンダであり、ＸＹ
テーブルＩＯ上に搭載したボンディングヘッド１１には
ボンディングアーム１２を上下揺動可能に一端枢支し、
またこのアーム１２の先端Ｋｌｄキャピラリ１３を固着
している。このキャビラｌ　Ｉ　３には図外のスプール
に捲回したワイヤ、即ちＡｊｉｌ　４ｉ挿通し、ＡＬｆ
ｊｌの先端をキャピラリの下方に突出させている。前記
キャピラリ１３の下方にはボンディングステージ１５を
配設し、このステージ上にはワイヤがボンディングされ
る半導体構体１６がライン上を移動されてくるようＫな
っている。FIG. 2 shows a wire bonder according to an embodiment of the present invention.
A bonding arm 12 is pivoted at one end to the bonding head 11 mounted on the table IO so as to be able to swing vertically.
Further, a Kld capillary 13 at the tip of this arm 12 is fixed. A wire wound around a spool (not shown), namely Ajil 4i, is inserted into this cabil I 3, and ALf
The tip of jl is made to protrude below the capillary. A bonding stage 15 is provided below the capillary 13, on which a semiconductor structure 16 to which a wire is bonded is moved along a line.

一方、前記キャピラリ１３の近傍位置には、支持体１７
によってその上端を軸支１８した略り字状の中空の電極
１９を配設し、下辺の放電部２゜を紙面と直角方向に揺
動できるようにしている。On the other hand, a support 17 is located near the capillary 13.
An abbreviated hollow electrode 19 whose upper end is supported by a shaft 18 is disposed so that the lower discharge portion 2° can be swung in a direction perpendicular to the plane of the paper.

そして、この放電部２０には第３図に示すように、中空
内部に連通ずる複数個の孔２１＝ｉ形成すると共に、こ
の放電部２０を包囲するように円筒状のシールド筒２°
２を取着し、電極中空を通して供給される所要のガス（
例えばＨ，ガス）を孔２１からシールド筒２２内に充満
させ、内部１１ガス雰囲気とする。前記シールド筒２２
は、第３図及び第４図に示すように、透明樹脂や耐熱ガ
ラス等の透明材料からなる円筒状のカラー２４と、この
カラー２４の両端に夫々固着してカラー２４両端を封止
するディスク２５．２６とからなり、一方のディスク２
５が前記電極１９の放電部２０に貫通状態で支持される
。この場合、両ディスク２５．２６は透明材料でなくと
もよくベーク材等が使用される。−＆−ｈ、前記力′″
７−２４の円周一部には切欠き２３全形成し、前記キャ
ピラ１３１３の下端が侵入できるようにしている。As shown in FIG. 3, this discharge part 20 is formed with a plurality of holes 21=i communicating with the hollow interior, and a cylindrical shield tube 2° is formed to surround this discharge part 20.
2 and the required gas (
For example, H, gas) is filled into the shield cylinder 22 through the hole 21 to create a gas atmosphere inside the shield cylinder 22 . The shield tube 22
As shown in FIGS. 3 and 4, the cylindrical collar 24 is made of a transparent material such as transparent resin or heat-resistant glass, and the disks are fixed to both ends of the collar 24 to seal both ends of the collar 24. 25, 26, one disk 2
5 is supported by the discharge part 20 of the electrode 19 in a penetrating state. In this case, both disks 25 and 26 do not need to be made of transparent material, and baking material or the like may be used. -&-h, said force'''
A notch 23 is entirely formed in a part of the circumference of 7-24 so that the lower end of the capillary 1313 can enter therein.

以上の構成によれば、図示のように電極１９をキャビラ
ＩＪ　１３の側方位置から下方に揺動すればシールド筒
２２も一対にキャピラリに向かって揺動され、放電部２
０が真下に位置されたときに切欠き２３内にキャビラＩ
Ｊ　ｌ　３が侵入される。このとき、Ａ４線１４の下端
は放電部２０に対向位置される。この状態で電極１９中
空内にガスを供給すれば放電部２０の孔２１からシール
ド筒２２内にガスが滴定され、Ａｚｉ１４先端の雰囲気
を所要のガス雰囲気とする。そして、Ａｔ線線番４電極
１９との間に高電圧を印加すれば放電部２０とＡｌ線先
端との間に放電が発生しそのエネルギによってボールが
形成されることになる。According to the above configuration, when the electrode 19 is swung downward from the side position of the capillary IJ 13 as shown in the figure, the shield cylinder 22 is also swung toward the capillary as a pair, and the discharge part 2
When 0 is positioned directly below, the cab I is placed in the notch 23.
J l 3 is invaded. At this time, the lower end of the A4 wire 14 is positioned opposite to the discharge section 20. If gas is supplied into the hollow part of the electrode 19 in this state, the gas is titrated into the shield cylinder 22 from the hole 21 of the discharge part 20, and the atmosphere at the tip of the Azi 14 is made into a required gas atmosphere. If a high voltage is applied between the At wire number 4 electrode 19, a discharge will occur between the discharge portion 20 and the tip of the Al wire, and the energy will form a ball.

このとき、本例ではシールド筒２２のカラー２４を透明
材料にて形成しているので、Ａｌ線＋４の先端に形成さ
れるボールの状態をシールド筒２２の外側から観察する
ことができる。したがって、供給ガスや放電に関する各
条件を設定する際におけるボール形成においても・、ボ
ール形成の試み毎にシールド筒２２、つまシミ極２０を
作動させる必要は全くない。これにより、Ａｔ線先端に
おける雰囲気の安定化を図ってボール真球状態の観察が
可能とされる一方、条件設定作業の容易化及び迅速化ケ
達成することができる。特に、Ａｔ線先端と電極（放電
部）との距離の設定は、電極を下動さぜた状態でこれ全
行なうことができるので高精度な寸法設定を極めて容易
に行なうことができる。At this time, since the collar 24 of the shield tube 22 is made of a transparent material in this example, the state of the ball formed at the tip of the Al wire +4 can be observed from the outside of the shield tube 22. Therefore, even when forming a ball when setting various conditions related to supply gas and discharge, there is no need to operate the shield tube 22 and the tab stain pole 20 every time a ball formation is attempted. This makes it possible to stabilize the atmosphere at the tip of the At wire and observe the true spherical state of the ball, while facilitating and speeding up the condition setting work. In particular, since the distance between the tip of the At wire and the electrode (discharge portion) can be completely set while the electrode is being moved downward, highly accurate dimension setting can be carried out extremely easily.

ここで、本発明はＡｔ線先端と電極をシールド筒外部か
ら観察できればよいので、カラー２４の一部や場合によ
ってはディスク２６を透明材料にて形成してもよい。Here, in the present invention, since it is sufficient that the At wire tip and the electrode can be observed from outside the shield cylinder, a part of the collar 24 and, as the case may be, the disk 26 may be formed of a transparent material.

以上のように本発明のワイヤボンダによれば、シールド
筒を透明材料にて形成しているのでＡｔ線先端に形成さ
れるボールの真球度の観察をシールド筒外部から行なう
ことができ、ボール形成の各条件の設定作業の容易化及
び迅速化を図り、これによシ真球度の高いボールの形成
を可能にしてワイヤボンディングの信頼性を向上するこ
ともできるという効果を奏する。尚第３図のディスク２
５．２６およびシールド筒２４を絶縁性利料あるいは側
熱性材料で構成しボールの形成性、耐久性及び安全性を
向上させる事が出来る。As described above, according to the wire bonder of the present invention, since the shield tube is formed of a transparent material, the sphericity of the ball formed at the tip of the At wire can be observed from outside the shield tube, and the ball formation The present invention has the effect of facilitating and speeding up the work of setting each condition, thereby making it possible to form a ball with high sphericity and improving the reliability of wire bonding. In addition, disk 2 in Figure 3
5.26 and the shield tube 24 are made of an insulating material or a heat-generating material to improve the formability, durability, and safety of the ball.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来構造の断面図、 第２図は大発明のワイヤホンダの全体構成図、第３図及
び第４図は要部の拡大断面図である。 １２・・・ボンディングアーム、１３°°°キヤピラリ
。 １４・・・ＡＡ線、１９・・・電極、２０・・・放電部
、２２・・・シールド筒、２３・・・切欠き、２４・・
・カラー、２５．２６・・・ディスク。 第　　１　　図 第　　２　　図 １／９ 第　　３　　図 第４図FIG. 1 is a sectional view of the conventional structure, FIG. 2 is an overall configuration diagram of the wire honda of the great invention, and FIGS. 3 and 4 are enlarged sectional views of the main parts. 12...Bonding arm, 13°°° capillary. 14...AA wire, 19...electrode, 20...discharge part, 22...shield tube, 23...notch, 24...
・Color, 25.26...disc. Figure 1 Figure 2 Figure 1/9 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】 １、ボンディング用ワイヤの先端と電極の放電部との間
に放ｔを発生して前記ワイヤ先端にボールを形成するワ
イヤボンダであって、放！発生時に前記ワイヤの先端を
包囲してこれを所要のガス雰囲気に保持するカバーを透
明材料にて形成したこトラ特徴とするワイヤボンダ。 ２、前記カバーは少なくとも周面を透明材料にて形成し
てなる特許請求の範囲第１項記載のワイヤボンダ。 ３、前記カバーを耐熱性あるいは耐火性材料で形成して
なる特許請求の範囲第１項記載のワイヤボンダ。 ４、前記カバーを絶縁性制料で形成して々る特許請求の
範囲第１項記載のワイヤボンダ。[Scope of Claims] 1. A wire bonder that generates radiation between the tip of a bonding wire and a discharge portion of an electrode to form a ball at the tip of the wire, which generates radiation! A wire bonder characterized in that a cover is formed of a transparent material to surround the tip of the wire and maintain it in a required gas atmosphere when the wire is generated. 2. The wire bonder according to claim 1, wherein the cover has at least a peripheral surface made of a transparent material. 3. The wire bonder according to claim 1, wherein the cover is made of a heat-resistant or fire-resistant material. 4. The wire bonder according to claim 1, wherein the cover is formed of an insulating material.
JP58012728A 1983-01-31 1983-01-31 Wire bonder Pending JPS59139637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58012728A JPS59139637A (en) 1983-01-31 1983-01-31 Wire bonder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58012728A JPS59139637A (en) 1983-01-31 1983-01-31 Wire bonder

Publications (1)

Publication Number Publication Date
JPS59139637A true JPS59139637A (en) 1984-08-10

Family

ID=11813493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58012728A Pending JPS59139637A (en) 1983-01-31 1983-01-31 Wire bonder

Country Status (1)

Country Link
JP (1) JPS59139637A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182534A (en) * 1983-04-01 1984-10-17 Shinkawa Ltd Ball forming device for wire bonder
JPS60213038A (en) * 1984-04-09 1985-10-25 Toshiba Corp Wire bonding device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440570A (en) * 1977-07-26 1979-03-30 Welding Inst Method of bonding high voltage aluminum ball

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440570A (en) * 1977-07-26 1979-03-30 Welding Inst Method of bonding high voltage aluminum ball

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182534A (en) * 1983-04-01 1984-10-17 Shinkawa Ltd Ball forming device for wire bonder
JPS60213038A (en) * 1984-04-09 1985-10-25 Toshiba Corp Wire bonding device

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