JPH0126531B2 - - Google Patents
Info
- Publication number
- JPH0126531B2 JPH0126531B2 JP57104352A JP10435282A JPH0126531B2 JP H0126531 B2 JPH0126531 B2 JP H0126531B2 JP 57104352 A JP57104352 A JP 57104352A JP 10435282 A JP10435282 A JP 10435282A JP H0126531 B2 JPH0126531 B2 JP H0126531B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- point
- bonding
- capillary
- bonding point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 10
- 239000008188 pellet Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
本発明は半導体ペレツトと外部リードとの間を
ワイヤで接続するワイヤボンデイング方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonding method for connecting a semiconductor pellet and an external lead with a wire.
半導体集積回路（IC、LSI）等の組立工程にお
いては、第１図ａに示すようにキヤピラリ１に挿
通したワイヤ２の先端にボール３を形成し、同図
ｂに示すようにボール３を半導体基板４に設けた
タブ５に溶着されたペレツト６の第１ボンデイン
グ点Ａにキヤピラリ１を押圧して接続し、次にキ
ヤピラリ１を移動して同図ｃに示すように外部リ
ード７の第２ボンデイング点Ｂへワイヤ２を接続
する。なお、図中、８は半導体基板４及び外部リ
ード７を加熱する加熱体である。 In the assembly process of semiconductor integrated circuits (IC, LSI), etc., a ball 3 is formed at the tip of a wire 2 inserted into a capillary 1 as shown in FIG. The capillary 1 is pressed and connected to the first bonding point A of the pellet 6 welded to the tab 5 provided on the substrate 4, and then the capillary 1 is moved to connect the second bonding point A of the external lead 7 as shown in FIG. Connect wire 2 to bonding point B. Note that in the figure, reference numeral 8 denotes a heating body that heats the semiconductor substrate 4 and the external leads 7.
ところで従来、前記第１ボンデイング点Ａから
第２ボンデイング点Ｂへのキヤピラリ１の移動
は、第２図に点線で示す軌跡を通つて行つてい
る。即ち、第１ボンデイング点Ａより上方にＣ点
まで上昇させ、次に斜め上方のＤ点に上昇させ、
続いてＥ点に水平移動させ、次に第２ボンデイン
グ点Ｂの上方のＦ点まで斜め下方に下降させ、最
後にＢ点に下降させている。 Conventionally, the capillary 1 moves from the first bonding point A to the second bonding point B along a trajectory shown by a dotted line in FIG. That is, it is raised above the first bonding point A to point C, then raised diagonally upward to point D,
Subsequently, it is moved horizontally to point E, then lowered obliquely to point F above the second bonding point B, and finally lowered to point B.
このように、キヤピラリ１を直線的に移動させ
てループコントロールを行つており、キヤピラリ
１がＥ点に移動した時にワイヤ２が最も繰り出さ
れる。この時のワイヤ長さはｙ＋l1である。ここ
で、ｙは理想ループ高さを示す。ところで、キヤ
ピラリ１がＥ点からＦ点に移動する途中において
は、即ちＥ点からＧ点に達する時はワイヤ長がl2
となり、l1−l2＝△ｌだけ短くなる軌跡をとる。
しかしながら、キヤピラリ１から繰り出されたワ
イヤ２はキヤピラリ１に逆戻りしにくくなるた
め、キヤピラリ１がＧ点に達した時は、l1−l2＝
△ｌだけワイヤが垂んでしまう。そして、Ｇ点か
らＦ点までは前記ワイヤの垂みを伸ばす動きを行
う。しかるに、一度ワイヤに垂み癖がついてしま
うと、それを伸ばそうとしても完全には元に戻ら
ず、また伸ばそうとする動きによりボンデイング
されたワイヤにストレス（歪）がかかり弱くなつ
てしまうという欠点があつた。 In this way, loop control is performed by linearly moving the capillary 1, and when the capillary 1 moves to point E, the wire 2 is fed out the most. The wire length at this time is y+l 1 . Here, y indicates the ideal loop height. By the way, while the capillary 1 is moving from point E to point F, that is, when it reaches point G from point E, the wire length is l 2
The trajectory becomes shorter by l 1 −l 2 =△l.
However, the wire 2 fed out from the capillary 1 becomes difficult to return to the capillary 1, so when the capillary 1 reaches point G, l 1 − l 2 =
The wire hangs down by △l. Then, from point G to point F, the wire is stretched out. However, once the wire has a tendency to sag, it cannot be completely restored even if you try to stretch it, and the movement of stretching it puts stress (distortion) on the bonded wire and weakens it. It was hot.
本発明は上記従来技術の欠点に鑑みなされたも
ので、ワイヤにストレスをかけずにループコント
ロールを行い得るワイヤボンデイング方法を提供
することを目的とする。 The present invention was made in view of the above-mentioned drawbacks of the prior art, and it is an object of the present invention to provide a wire bonding method that can perform loop control without applying stress to the wire.
以下、本発明を図示の実施例により説明する。
第３図は本発明になるワイヤボンデイング方法の
一実施例を示す。なお、第１図と同じまたは相当
部分には同一符号を付して説明する。第３図ａに
示す状態よりキヤピラリ１が下降し、同図ｂに示
すようにペレツト６の第１ボンデイング点Ａにボ
ール３をキヤピラリ１で押圧して接続した後、理
想的なワイヤループに必要なワイヤ長分Ｚだけペ
レツト６の上方のＨ点にキヤピラリ１を上昇さ
せ、次に理想的ループ高さｙを中心として半径ｘ
＝Ｚ−ｙの円弧運動をさせ、同図ｃに示すように
第２ボンデイング点Ｂにワイヤを接続させる。 Hereinafter, the present invention will be explained with reference to illustrated embodiments.
FIG. 3 shows an embodiment of the wire bonding method according to the present invention. Note that the same or equivalent parts as in FIG. 1 will be described with the same reference numerals. The capillary 1 is lowered from the state shown in Fig. 3a, and after pressing the ball 3 with the capillary 1 to connect it to the first bonding point A of the pellet 6 as shown in Fig. 3b, the ball 3 is connected to the first bonding point A of the pellet 6, and then The capillary 1 is raised to the point H above the pellet 6 by the wire length Z, and then the ideal loop height y is centered at a radius x.
= Zy, and connect the wire to the second bonding point B as shown in c of the same figure.
このように、第１ボンデイング点Ａの上方のＨ
点までキヤピラリ１を上昇させてボンデイングに
必要なワイヤを繰り出した後、円運動をさせてキ
ヤピラリ１を第２ボンデイング点Ｂに導くので、
ワイヤを引つぱることも押すこともなくワイヤに
ストレスをかけずにボンデイングすることができ
る。またこれによりボンデイングされたワイヤネ
ツクにストレスがかからないので、ネツクも強く
高いループができる。また円運動の中心の高さ、
即ち理想ループ高さｙを変えることでワイヤルー
プ高さをコントロールできる。 In this way, H above the first bonding point A
After raising the capillary 1 to the point and feeding out the wire necessary for bonding, the capillary 1 is guided to the second bonding point B by a circular motion.
Bonding can be performed without stress on the wire without pulling or pushing the wire. Also, since stress is not applied to the bonded wire neck, the wire is strong and a high loop can be formed. Also, the height of the center of circular motion,
That is, the wire loop height can be controlled by changing the ideal loop height y.
第４図は本発明の第２実施例を示す。本実施例
はキヤピラリ１を第１ボンデイング点Ａの上方の
Ｊ点で上昇させ、その後Ｋ点まで水平移動させて
理想的なワイヤループに必要なワイヤ長分だけワ
イヤを繰り出し、その後円運動をさせてキヤピラ
リ１を第２ボンデイング点Ｂに導いている。この
ようにしても前記実施例と同様な効果が得られ
る。 FIG. 4 shows a second embodiment of the invention. In this embodiment, the capillary 1 is raised at point J above the first bonding point A, then moved horizontally to point K to feed out the wire by the wire length required for an ideal wire loop, and then moved in a circular motion. and leads the capillary 1 to the second bonding point B. Even in this case, the same effects as in the embodiment described above can be obtained.
第５図は本発明の第３実施例を示す。本実施例
はキヤピラリ１をボンデイング点Ａの上方のＬ点
まで上昇させた後、第２ボンデイング点Ｂと逆方
向の斜め上方のＭ点まで上昇させて理想的なワイ
ヤループに必要なワイヤ長分だけワイヤを繰り出
し、その後円運動をさせてキヤピラリ１を第２ボ
ンデイング点Ｂに導いている。このようにしても
前記各実施例と同様な効果が得られる。 FIG. 5 shows a third embodiment of the invention. In this embodiment, the capillary 1 is raised to a point L above the bonding point A, and then raised to a point M diagonally above the second bonding point B in the opposite direction to the wire length required for an ideal wire loop. After that, the wire is let out by a circular motion to guide the capillary 1 to the second bonding point B. Even in this case, the same effects as in each of the embodiments described above can be obtained.
なお、上記各実施例は本発明の一実施例を示し
たにすぎなく、本発明は要旨を逸脱しない範囲で
種々の変形が考えられることを理解されるべきで
ある。例えば、理想的なワイヤループに必要なワ
イヤ長分だけワイヤを繰り出す軌跡は種々考えら
れ、第２図と同じようにＡ→Ｃ→Ｄ→Ｅの軌跡を
とつてもよい。また円運動によつて第２ボンデイ
ング点Ｂの近傍までキヤピラリ１を導き、その後
キヤピラリ１を第２ボンデイング点に導いてもよ
い。 It should be noted that the above-mentioned embodiments are merely examples of the present invention, and it should be understood that various modifications can be made to the present invention without departing from the spirit thereof. For example, various trajectories for unwinding the wire by the wire length required for an ideal wire loop can be considered, and a trajectory of A→C→D→E may be taken as in FIG. 2. Alternatively, the capillary 1 may be guided to the vicinity of the second bonding point B by circular motion, and then the capillary 1 may be guided to the second bonding point.
以上の説明から明らかな如く、本発明になるワ
イヤボンデイング方法によれば、ワイヤボンデイ
ング時にワイヤに過度のストレスをかけずにルー
プコントロールができ、安定したループを作るこ
とができる。 As is clear from the above description, according to the wire bonding method of the present invention, loop control can be performed without applying excessive stress to the wire during wire bonding, and a stable loop can be created.
第１図ａ，ｂ，ｃ及び第２図は従来のワイヤボ
ンデイング方法を示す説明図、第３図ａ，ｂ，ｃ
は本発明になるワイヤボンデイング方法を示す説
明図、第４図及び第５図はそれぞれ本発明になる
ワイヤボンデイング方法の第２、第３実施例を示
す説明図である。
１…キヤピラリ、２…ワイヤ、Ａ…第１ボンデ
イング点、Ｂ…第２ボンデイング点。
Fig. 1 a, b, c and Fig. 2 are explanatory diagrams showing the conventional wire bonding method, Fig. 3 a, b, c
FIG. 4 is an explanatory diagram showing a wire bonding method according to the present invention, and FIGS. 4 and 5 are explanatory diagrams showing second and third embodiments of the wire bonding method according to the present invention, respectively. 1... Capillary, 2... Wire, A... First bonding point, B... Second bonding point.
Claims (1)
の間をワイヤで接続するワイヤボンデイング方法
において、第１ボンデイング点にワイヤを接続
後、キヤピラリをボンデイングに必要なワイヤ長
分第１ボンデイング点の上方に移動させ、第２ボ
ンデイング点の位置又は第２ボンデイング点の近
傍まで円運動させてワイヤを第２ボンデイング点
に接続することを特徴とするワイヤボンデイング
方法。1 In a wire bonding method that connects a first bonding point and a second bonding point with a wire, after connecting the wire to the first bonding point, move the capillary above the first bonding point by the wire length necessary for bonding. A wire bonding method comprising: connecting the wire to the second bonding point by circularly moving the wire to the position of the second bonding point or near the second bonding point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57104352A JPS58220436A (en) | 1982-06-17 | 1982-06-17 | Wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57104352A JPS58220436A (en) | 1982-06-17 | 1982-06-17 | Wire bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58220436A JPS58220436A (en) | 1983-12-22 |
| JPH0126531B2 true JPH0126531B2 (en) | 1989-05-24 |
Family
ID=14378483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57104352A Granted JPS58220436A (en) | 1982-06-17 | 1982-06-17 | Wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58220436A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6270000B1 (en) | 1999-03-02 | 2001-08-07 | Kabushiki Kaisha Shinkawa | Wire bonding method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6342135A (en) * | 1986-08-08 | 1988-02-23 | Shinkawa Ltd | Wire bonding method |
| JPS63257236A (en) * | 1987-04-14 | 1988-10-25 | Mitsubishi Electric Corp | Wire bonding |
-
1982
- 1982-06-17 JP JP57104352A patent/JPS58220436A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6270000B1 (en) | 1999-03-02 | 2001-08-07 | Kabushiki Kaisha Shinkawa | Wire bonding method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58220436A (en) | 1983-12-22 |
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