JP3381910B2 - Wire bonding equipment - Google Patents

Wire bonding equipment

Info

Publication number
JP3381910B2
JP3381910B2 JP2000283791A JP2000283791A JP3381910B2 JP 3381910 B2 JP3381910 B2 JP 3381910B2 JP 2000283791 A JP2000283791 A JP 2000283791A JP 2000283791 A JP2000283791 A JP 2000283791A JP 3381910 B2 JP3381910 B2 JP 3381910B2
Authority
JP
Japan
Prior art keywords
wire
stage
bonded
capillary
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000283791A
Other languages
Japanese (ja)
Other versions
JP2002093846A (en
Inventor
博 相澤
寛朗 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Seiki Co Ltd
Original Assignee
Nippon Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Seiki Co Ltd filed Critical Nippon Seiki Co Ltd
Priority to JP2000283791A priority Critical patent/JP3381910B2/en
Publication of JP2002093846A publication Critical patent/JP2002093846A/en
Application granted granted Critical
Publication of JP3381910B2 publication Critical patent/JP3381910B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/787Means for aligning
    • H01L2224/78703Mechanical holding means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、ワイヤボンディン
グ装置に関する。特に、ワイヤの先端に放電により電気
火花を飛ばしてボールを形成するワイヤボンディング装
置に関する。
TECHNICAL FIELD The present invention relates to a wire bonding apparatus. In particular, the present invention relates to a wire bonding apparatus that blows electric sparks to the tip of a wire by electric discharge to form a ball.

【0002】[0002]

【従来の技術】図4には、一般的に用いられるワイヤボ
ンディング装置の一例が示されており、図中、1は金な
どの導電材料からなるワイヤ、2はワイヤ1を導出し、
垂直水平方向に移動可能なキャピラリ、3はキャピラリ
2から導出されたワイヤ1の先端に放電により電気火花
を飛ばしてボール1aを形成するトーチロッド、4はワ
イヤ1でボンディングされるICなどの半導体チップ、
5は同じくワイヤ1でボンディングされるパッドを備え
た基板、6は半導体チップ4を載せた基板5を載置する
ステンレスなどの金属からなるステージ、7は基板5上
面に当接し、ステージ6とともに基板5を保持するステ
ンレスなどの金属からなる保持部材、8はヒータユニッ
ト、9はステージ6をヒータユニット8に固定するビス
である。
2. Description of the Related Art FIG. 4 shows an example of a commonly used wire bonding apparatus. In the figure, 1 is a wire made of a conductive material such as gold, 2 is a wire 1, and 2 is a wire.
Capillary 3 movable in the vertical and horizontal directions is a torch rod 3 which discharges electric sparks at the tip of the wire 1 led out from the capillary 2 to form a ball 1a, and 4 is a semiconductor chip such as an IC to be bonded with the wire 1. ,
5 is a substrate also provided with a pad to be bonded with the wire 1, 6 is a stage made of metal such as stainless steel on which the substrate 5 on which the semiconductor chip 4 is placed, 7 is abutted on the upper surface of the substrate 5, and the stage 6 and the substrate A holding member made of metal such as stainless steel for holding 5 is a heater unit, and 9 is a screw for fixing the stage 6 to the heater unit 8.

【0003】次に、その動作について説明する。まず、
キャピラリ2から伸びたワイヤ1の先端にボール1aが
予め形成してある。次に、キャピラリ2がヘッド上下駆
動機構により下降し、キャピラリ2に設けた超音波ホー
ン10を介して超音波発振器11からの発振された超音
波と圧力とを加えることによって接続するボールボンデ
ィングにより、半導体チップ4の電極にボール1aと半
導体チップ4の電極とを接合する。次に、キャピラリ2
が一定量上昇し、平面方向に一定量移動後下降し、キャ
ピラリ2に設けた超音波ホーン10を介して超音波発振
器11からの発振された超音波と圧力とを加えることに
よって接続するウェッジボンディングにより、基板5の
電極にワイヤ1を接合する。次に、キャピラリ2が一定
量上昇した後、ワイヤ1を図示しないクランパにより保
持して上昇し、基板5の電極部に接合されたワイヤ部分
からワイヤ1を断裂し、半導体チップ4と基板5とのワ
イヤ1による接続が完成する。そして、次のワイヤ1の
接続に備えて、キャピラリ2から出たワイヤ1の先端
に、トーチロッド3から放電により電気火花を飛ばし
て、ボール1aを形成する。
Next, the operation will be described. First,
A ball 1a is previously formed on the tip of the wire 1 extending from the capillary 2. Next, the capillary 2 is lowered by the head up-and-down drive mechanism, and the ultrasonic waves oscillated from the ultrasonic oscillator 11 and pressure are applied via the ultrasonic horn 10 provided on the capillary 2 to perform connection by ball bonding. The ball 1a and the electrode of the semiconductor chip 4 are bonded to the electrode of the semiconductor chip 4. Next, the capillary 2
Rises by a certain amount, moves by a certain amount in the plane direction, then descends, and is connected by applying pressure and ultrasonic waves oscillated from the ultrasonic oscillator 11 via the ultrasonic horn 10 provided in the capillary 2. Thus, the wire 1 is bonded to the electrode of the substrate 5. Next, after the capillary 2 is lifted by a certain amount, the wire 1 is held and lifted by a clamper (not shown), and the wire 1 is ruptured from the wire portion bonded to the electrode portion of the substrate 5, and the semiconductor chip 4 and the substrate 5 are separated. The connection by wire 1 is completed. Then, in preparation for the next connection of the wire 1, electric sparks are blown from the torch rod 3 to the tip of the wire 1 coming out of the capillary 2 by discharge to form a ball 1a.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、ワイヤ
1が確実に半導体チップ4や基板5に接続されるとは限
らず、例えば、図中で示すように、半導体チップ4に接
続しているが、基板5への接続に失敗した場合に、接続
に失敗したワイヤ12へ電気火花が飛び、ワイヤ12か
ら伝わった電気は、半導体チップ4,基板5そして保持
部材7へ、あるいは、半導体チップ4,基板5,基板5
に形成したスルーホール5aそしてステージ6へと伝わ
ることにより、半導体チップ4に過度の電気が流れて、
半導体チップ4を破壊するため、その半導体チップ4は
不良品となる。
However, the wire 1 is not always connected to the semiconductor chip 4 or the substrate 5 with certainty. For example, as shown in the drawing, the wire 1 is connected to the semiconductor chip 4. When the connection to the substrate 5 fails, electric sparks fly to the wire 12 that has failed to connect, and the electricity transmitted from the wire 12 is transferred to the semiconductor chip 4, the substrate 5, and the holding member 7, or the semiconductor chip 4, the substrate. 5, substrate 5
Excessive electricity flows to the semiconductor chip 4 by being transmitted to the through hole 5a formed in and the stage 6,
Since the semiconductor chip 4 is destroyed, the semiconductor chip 4 becomes a defective product.

【0005】また、ワイヤ1が確実に半導体チップ4と
基板5に接続された場合でも、例えば、基板5へのボン
ディング作業時に、ワイヤ1が基板5に接続された部分
から切断されてしまい、キャピラリ2を引き上げるとき
に、ワイヤ1も同時に引き上げられ、キャピラリ2の先
端にワイヤ1が位置しない場合などがある。このような
キャピラリ2の先端にワイヤ1が位置しない場合におい
ては、正常に接続されたワイヤ1にトーチロッド3から
の放電による電気火花が飛んでしまい、前述と同様に、
半導体チップ4に過度の電気が流れて、半導体チップ4
を破壊するため、その半導体チップ4は不良品となる。
Further, even when the wire 1 is reliably connected to the semiconductor chip 4 and the substrate 5, the wire 1 is cut from the portion connected to the substrate 5 during the bonding work to the substrate 5, for example, and thus the capillary is obtained. In some cases, when the wire 2 is pulled up, the wire 1 is also pulled up at the same time, and the wire 1 is not located at the tip of the capillary 2. In the case where the wire 1 is not located at the tip of the capillary 2 as described above, electric sparks due to the discharge from the torch rod 3 fly to the wire 1 that is normally connected, and as described above,
Excessive electricity flows to the semiconductor chip 4 and the semiconductor chip 4
Therefore, the semiconductor chip 4 becomes a defective product.

【0006】また、ワイヤ1が確実に接続された場合で
も、トーチロッド3からの放電が常にキャピラリ2から
伸びるワイヤ1の先端に与えられるとは限らず、キャピ
ラリ2から伸びるワイヤ1の先端に放電されない場合も
あり、この場合、次の動作時にはワイヤ1にボール1a
が形成されないという問題があった。
Even when the wire 1 is securely connected, the discharge from the torch rod 3 is not always applied to the tip of the wire 1 extending from the capillary 2, and the discharge is generated at the tip of the wire 1 extending from the capillary 2. In this case, the ball 1a may be attached to the wire 1 during the next operation.
There was a problem that was not formed.

【0007】本発明は、半導体チップなどの被ボンディ
ング物への放電を防止し、被ボンディング物の不良の発
生を防止する。また、安定したボンディング作業が行え
るワイヤボンディング装置を提供することを目的とす
る。
The present invention prevents discharge to an object to be bonded such as a semiconductor chip and prevents occurrence of defects in the object to be bonded. Moreover, it aims at providing the wire bonding apparatus which can perform stable bonding work.

【0008】[0008]

【課題を解決するための手段】本発明は、ワイヤを導出
するキャピラリと、このキャピラリから導出されたワイ
ヤの先端に電気火花を飛ばしてボールを形成するトーチ
ロッドと、前記ワイヤでボンディングされる被ボンディ
ング物を載置するステージと、前記被ボンディング物を
前記ステージとで保持する保持部材とを備えたワイヤボ
ンディング装置において、前記ステージと前記保持部材
を絶縁部材で覆ったものである。
SUMMARY OF THE INVENTION According to the present invention, a capillary for guiding a wire, a torch rod for ejecting electric sparks to form a ball at the tip of the wire drawn out of the capillary, and a wire bonded by the wire. In a wire bonding apparatus including a stage on which a bonding object is placed and a holding member that holds the object to be bonded by the stage, the stage and the holding member are covered with an insulating member.

【0009】また、ワイヤを導出するキャピラリと、こ
のキャピラリから導出されたワイヤの先端に電気火花を
飛ばしてボールを形成するトーチロッドと、前記ワイヤ
でボンディングされる被ボンディング物を載置するステ
ージと、前記被ボンディング物を前記ステージとで保持
する保持部材とを備えたワイヤボンディング装置におい
て、前記ステージの少なくとも前記被ボンディング物を
載置する部分に絶縁部材で覆うとともに前記保持部材の
少なくとも前記被ボンディング物と接触する部分を絶縁
部材で覆ったものである。
Further, a capillary for leading out the wire, a torch rod for forming a ball by flying electric sparks at the tip of the wire led out from the capillary, and a stage for mounting an object to be bonded by the wire. A wire bonding apparatus having a holding member for holding the object to be bonded with the stage, wherein at least a portion of the stage on which the object to be bonded is placed is covered with an insulating member and at least the object to be bonded of the holding member. The part that comes into contact with an object is covered with an insulating member.

【0010】また、ワイヤを導出するキャピラリと、こ
のキャピラリから導出されたワイヤの先端に電気火花を
飛ばしてボールを形成するトーチロッドと、前記ワイヤ
でボンディングされる被ボンディング物を載置するステ
ージと、前記被ボンディング物を前記ステージとで保持
する保持部材とを備えたワイヤボンディング装置におい
て、前記ステージを絶縁部材で形成するとともに前記保
持部材を絶縁部材で覆ったものである。
Further, a capillary for guiding the wire, a torch rod for forming a ball by flying electric sparks at the tip of the wire led out of the capillary, and a stage for mounting an object to be bonded by the wire. A wire bonding apparatus including a holding member for holding the object to be bonded with the stage, wherein the stage is formed of an insulating member and the holding member is covered with an insulating member.

【0011】また、ワイヤを導出するキャピラリと、こ
のキャピラリから導出されたワイヤの先端に電気火花を
飛ばしてボールを形成するトーチロッドと、前記ワイヤ
でボンディングされる被ボンディング物を載置するステ
ージと、前記被ボンディング物を前記ステージとで保持
する保持部材とを備えたワイヤボンディング装置におい
て、前記ステージを絶縁部材で形成するとともに前記保
持部材の少なくとも前記被ボンディング物と接触する部
分を絶縁部材で覆ったものである。
Further, a capillary for leading out the wire, a torch rod for forming a ball by flying an electric spark at the tip of the wire led out from the capillary, and a stage for mounting an object to be bonded by the wire. In a wire bonding apparatus including a holding member that holds the object to be bonded with the stage, the stage is formed of an insulating member, and at least a portion of the holding member that is in contact with the object to be bonded is covered with an insulating member. It is a thing.

【0012】また、前記ステージを形成する前記絶縁部
材がセラミックからなるものである。
The insulating member forming the stage is made of ceramic.

【0013】また、前記トーチロッドの近傍に避雷針を
設けたものである。
A lightning rod is provided near the torch rod.

【0014】[0014]

【発明の実施の形態】本発明によるワイヤボンディング
装置は、ワイヤ1を導出するキャピラリ2と、このキャ
ピラリ2から導出されたワイヤ1の先端に電気火花を飛
ばしてボール1aを形成するトーチロッド3と、ワイヤ
1でボンディングされる被ボンディング物である半導体
チップ4や基板5を載置するステージ6と、半導体チッ
プ4や基板5をステージ6とで保持する保持部材7とを
備えたワイヤボンディング装置において、ステージ6と
保持部材7を絶縁部材13,14で覆ったものである。
このように構成したことにより、ボンディングに失敗し
たワイヤを介して半導体チップ4や基板5などの被ボン
ディング物への放電を防止することができ、被ボンディ
ング物の不良の発生を防止することができる。また、ワ
イヤ1が確実に接続された場合には、ワイヤ1とトーチ
ロッド3との間に確実に放電を生じさせることができ、
安定したボンディング作業が行うことができる。
BEST MODE FOR CARRYING OUT THE INVENTION A wire bonding apparatus according to the present invention comprises a capillary 2 for leading a wire 1 and a torch rod 3 for forming a ball 1a by flying an electric spark at the tip of the wire 1 led out of the capillary 2. In a wire bonding apparatus including a stage 6 on which a semiconductor chip 4 or a substrate 5 to be bonded by the wire 1 is placed, and a holding member 7 for holding the semiconductor chip 4 or the substrate 5 on the stage 6. The stage 6 and the holding member 7 are covered with insulating members 13 and 14.
With this configuration, it is possible to prevent discharge to an object to be bonded such as the semiconductor chip 4 and the substrate 5 through the wire that has failed to be bonded, and it is possible to prevent a defect in the object to be bonded from occurring. . In addition, when the wire 1 is securely connected, it is possible to reliably generate an electric discharge between the wire 1 and the torch rod 3,
Stable bonding work can be performed.

【0015】また、ワイヤ1を導出するキャピラリ2
と、このキャピラリ2から導出されたワイヤ1の先端に
電気火花を飛ばしてボール1aを形成するトーチロッド
3と、ワイヤ1でボンディングされる被ボンディング物
である半導体チップ4や基板5を載置するステージ6
と、半導体チップ4や基板5をステージ6とで保持する
保持部材7とを備えたワイヤボンディング装置におい
て、ステージ6の少なくとも基板5を載置する部分6a
を絶縁部材13で覆うとともに保持部材7の少なくとも
基板5と接触する部分7aを絶縁部材14で覆ったもの
である。このように構成したことにより、ボンディング
に失敗したワイヤを介して半導体チップ4や基板5など
の被ボンディング物への放電を防止することができ、被
ボンディング物の不良の発生を防止することができる。
また、ワイヤ1が確実に接続された場合には、ワイヤ1
とトーチロッド3との間に確実に放電を生じさせること
ができ、安定したボンディング作業が行うことができ
る。
Further, a capillary 2 for leading out the wire 1
Then, a torch rod 3 for forming an electric spark to form a ball 1a, a semiconductor chip 4 and a substrate 5 to be bonded by the wire 1 are placed on the tip of the wire 1 led out from the capillary 2. Stage 6
And a holding member 7 that holds the semiconductor chip 4 and the substrate 5 with the stage 6, a portion 6a of the stage 6 on which at least the substrate 5 is mounted.
Is covered with an insulating member 13, and at least a portion 7a of the holding member 7 that contacts the substrate 5 is covered with an insulating member 14. With this configuration, it is possible to prevent discharge to an object to be bonded such as the semiconductor chip 4 and the substrate 5 through the wire that has failed to be bonded, and it is possible to prevent a defect in the object to be bonded from occurring. .
If the wire 1 is securely connected, the wire 1
A discharge can be reliably generated between the torch rod 3 and the torch rod 3, and a stable bonding operation can be performed.

【0016】また、ワイヤ1を導出するキャピラリ2
と、このキャピラリ2から導出されたワイヤ1の先端に
電気火花を飛ばしてボール1aを形成するトーチロッド
3と、ワイヤ1でボンディングされる被ボンディング物
である半導体チップ4や基板5を載置するステージ6
と、半導体チップ4や基板5をステージ6とで保持する
保持部材7とを備えたワイヤボンディング装置におい
て、ステージ6を絶縁部材で形成するとともに保持部材
7を絶縁部材14で覆ったものである。このように構成
したことにより、ボンディングに失敗したワイヤを介し
て半導体チップ4や基板5などの被ボンディング物への
放電を防止することができ、被ボンディング物の不良の
発生を防止することができる。また、ワイヤ1が確実に
接続された場合には、ワイヤ1とトーチロッド3との間
に確実に放電を生じさせることができ、安定したボンデ
ィング作業が行うことができる。
Further, a capillary 2 for leading out the wire 1
Then, a torch rod 3 for forming an electric spark to form a ball 1a, a semiconductor chip 4 and a substrate 5 to be bonded by the wire 1 are placed on the tip of the wire 1 led out from the capillary 2. Stage 6
And a holding member 7 for holding the semiconductor chip 4 and the substrate 5 with the stage 6, the stage 6 is formed of an insulating member, and the holding member 7 is covered with the insulating member 14. With this configuration, it is possible to prevent discharge to an object to be bonded such as the semiconductor chip 4 and the substrate 5 through the wire that has failed to be bonded, and it is possible to prevent a defect in the object to be bonded from occurring. . Further, when the wire 1 is securely connected, the electric discharge can be surely generated between the wire 1 and the torch rod 3, and the stable bonding work can be performed.

【0017】また、ワイヤ1を導出するキャピラリ2
と、このキャピラリ2から導出されたワイヤ1の先端に
電気火花を飛ばしてボール1aを形成するトーチロッド
3と、ワイヤ1でボンディングされる被ボンディング物
である半導体チップ4や基板5を載置するステージ6
と、半導体チップ4や基板5をステージ6とで保持する
保持部材7とを備えたワイヤボンディング装置におい
て、ステージ6を絶縁部材で形成するとともに保持部材
7の少なくとも基板5と接触する部分7aを絶縁部材1
4で覆ったものである。このように構成したことによ
り、ボンディングに失敗したワイヤを介して半導体チッ
プ4や基板5などの被ボンディング物への放電を防止す
ることができ、被ボンディング物の不良の発生を防止す
ることができる。また、ワイヤ1が確実に接続された場
合には、ワイヤ1とトーチロッド3との間に確実に放電
を生じさせることができ、安定したボンディング作業が
行うことができる。
Further, a capillary 2 for leading out the wire 1
Then, a torch rod 3 for forming an electric spark to form a ball 1a, a semiconductor chip 4 and a substrate 5 to be bonded by the wire 1 are placed on the tip of the wire 1 led out from the capillary 2. Stage 6
And a holding member 7 that holds the semiconductor chip 4 and the substrate 5 with the stage 6, the stage 6 is formed of an insulating member, and at least a portion 7a of the holding member 7 that contacts the substrate 5 is insulated. Member 1
It is covered with 4. With this configuration, it is possible to prevent discharge to an object to be bonded such as the semiconductor chip 4 and the substrate 5 through the wire that has failed to be bonded, and it is possible to prevent a defect in the object to be bonded from occurring. . Further, when the wire 1 is securely connected, the electric discharge can be surely generated between the wire 1 and the torch rod 3, and the stable bonding work can be performed.

【0018】また、ステージ6を形成する絶縁部材がセ
ラミックからなるものである。このように構成したこと
により、ボンディングに失敗したワイヤを介して半導体
チップ4や基板5などの被ボンディング物への放電を防
止することができ、被ボンディング物の不良の発生を防
止することができる。また、ワイヤ1が確実に接続され
た場合には、ワイヤ1とトーチロッド3との間に確実に
放電を生じさせることができ、安定したボンディング作
業が行うことができる。また、耐摩耗性に優れており、
耐久性のよいステージを備えたワイヤボンディング装置
を提供することができる。
The insulating member forming the stage 6 is made of ceramic. With this configuration, it is possible to prevent discharge to an object to be bonded such as the semiconductor chip 4 and the substrate 5 through the wire that has failed to be bonded, and it is possible to prevent a defect in the object to be bonded from occurring. . Further, when the wire 1 is securely connected, the electric discharge can be surely generated between the wire 1 and the torch rod 3, and the stable bonding work can be performed. It also has excellent wear resistance,
It is possible to provide a wire bonding apparatus including a stage having good durability.

【0019】また、トーチロッド3の近傍に避雷針16
を設けたものである。このように構成したことにより、
ボンディングに失敗したワイヤを介して半導体チップ4
や基板5などの被ボンディング物への放電を防止するこ
とができ、被ボンディング物の不良の発生を防止するこ
とができる。
A lightning rod 16 is provided near the torch rod 3.
Is provided. With this configuration,
Semiconductor chip 4 through the wire that failed in bonding
It is possible to prevent electric discharge to an object to be bonded such as the substrate 5 and the substrate 5, and prevent occurrence of a defect in the object to be bonded.

【0020】[0020]

【実施例】以下、図1に基づいて本発明の第一実施例を
説明する。なお、前記従来例と同一及び相当箇所には同
一符号を付してその詳細な説明は省略する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIG. The same or corresponding portions as those of the conventional example are designated by the same reference numerals, and detailed description thereof will be omitted.

【0021】図1において、1はワイヤ、2はキャピラ
リ、3はトーチロッド、4は半導体チップ、5は基板、
6はステージ、7は保持部材、8はヒータユニット、9
はビス、13,14は絶縁部材である。
In FIG. 1, 1 is a wire, 2 is a capillary, 3 is a torch rod, 4 is a semiconductor chip, 5 is a substrate,
6 is a stage, 7 is a holding member, 8 is a heater unit, 9
Is a screw, and 13 and 14 are insulating members.

【0022】本実施例においては、半導体チップ4と基
板5が、ボンディング装置にてボンディングされる被ボ
ンディング物であるが、基板5の代わりにリードフレー
ムなどを用いたものでもよい。
In the present embodiment, the semiconductor chip 4 and the substrate 5 are objects to be bonded by a bonding apparatus, but a lead frame or the like may be used instead of the substrate 5.

【0023】ステージ6は、半導体チップ4と基板5と
をその上面に載置した状態で、図示しない駆動手段にて
ヒータユニット8とともに昇降動作をさせられる。保持
手段7は、昇ってくるステージ6上に載置された基板5
の上面をおさえるもので、ステージ6との間で、基板5
を狭持するものである。
The stage 6 can be moved up and down together with the heater unit 8 by a driving means (not shown) with the semiconductor chip 4 and the substrate 5 placed on the upper surface thereof. The holding means 7 is the substrate 5 placed on the ascending stage 6.
The upper surface of the substrate 5 between the stage 6 and
Is to hold.

【0024】従来は、ステージ6と保持部材7は図4で
示すように露出しているものであったが、本実施例にお
いては、ステージ6と保持部材7はその表面を絶縁部材
である四フッ化エチレン樹脂からなる粘着テープ13,
14が貼り付けられて覆われている。
Conventionally, the stage 6 and the holding member 7 were exposed as shown in FIG. 4, but in the present embodiment, the surfaces of the stage 6 and the holding member 7 are insulating members. Adhesive tape 13 made of fluorinated ethylene resin,
14 is attached and covered.

【0025】このように、ステージ6と保持部材7を絶
縁部材である四フッ化エチレン樹脂からなる粘着テープ
13,14で覆ったことにより、トーチロッド3からの
放電がボンディングに失敗したワイヤ12に生じること
がなく、ワイヤ12を介して半導体チップ4や基板5に
放電されず、半導体チップ4や基板5の損傷を防止する
ことができ、不良の発生を防止することができる。ま
た、ワイヤ1がボンディングに確実に接続した場合に
は、ワイヤ1の先端に以外に放電することなく、確実に
ワイヤ1の先端に放電することで、ボール1aを形成す
ることができ、安定したボンディング作業を行うことが
できる。
As described above, since the stage 6 and the holding member 7 are covered with the adhesive tapes 13 and 14 made of tetrafluoroethylene resin, which is an insulating member, the wire 12 in which the discharge from the torch rod 3 fails in the bonding. It does not occur and is not discharged to the semiconductor chip 4 or the substrate 5 through the wire 12, so that the semiconductor chip 4 or the substrate 5 can be prevented from being damaged, and the occurrence of defects can be prevented. When the wire 1 is securely connected to the bonding, the ball 1a can be formed by discharging the wire 1 to the tip of the wire 1 without being discharged to the tip of the wire 1 and to be stable. Bonding work can be performed.

【0026】なお、前記実施例では、絶縁部材として四
フッ化エチレン樹脂の粘着テープ13,14を例にとっ
たが、また、四フッ化エチレン樹脂やセラミックなどの
絶縁部材からなる皮膜でステージ6と保持部材7を覆っ
たものでもよい。また、他の材料としては、耐熱性硬質
ゴム、耐熱性プラスチックなどであってもよい。
In the above-described embodiment, the adhesive tapes 13 and 14 made of tetrafluoroethylene resin are used as the insulating member, but the stage 6 is made of a film made of an insulating member such as ethylene tetrafluoride resin or ceramic. The holding member 7 may be covered. Further, other materials may be heat-resistant hard rubber, heat-resistant plastic, or the like.

【0027】また、前記実施例では、ステージ6と保持
部材7の全面を絶縁部材で覆っていたが、図2の第二実
施例で示すように、ステージ6の半導体チップ4や基板
5を載置する部分7aとステージ6の側面の一部を絶縁
部材13で覆ったものでもよい。また、保持部材7の少
なくとも基板5と接触する部分を絶縁部材14で覆った
ものでもよい。なお、図示していないが、ステージ6の
半導体チップ4や基板5を載置する部分7aのみを絶縁
部材13で覆ったものでもよい。
Further, in the above-mentioned embodiment, the entire surfaces of the stage 6 and the holding member 7 are covered with the insulating member, but as shown in the second embodiment of FIG. 2, the semiconductor chip 4 and the substrate 5 of the stage 6 are mounted. The portion 7a to be placed and a part of the side surface of the stage 6 may be covered with the insulating member 13. In addition, at least the portion of the holding member 7 that contacts the substrate 5 may be covered with the insulating member 14. Although not shown, only the portion 7a of the stage 6 on which the semiconductor chip 4 and the substrate 5 are mounted may be covered with the insulating member 13.

【0028】次に本発明の第三実施例を説明する。本実
施例は、トーチロッド3の近傍に避雷針15を設けたも
のである。この避雷針15の設けられる位置は、キャピ
ラリ2が垂直水平方向に移動し、ボール1aを形成する
位置に位置したときに、避雷針15からトーチロッド3
までの距離L1が、キャピラリ2から導出され予め所定
の位置にあるべきワイヤ1の先端(ボール1aの位置)
からトーチロッド3までの距離L2より遠い位置で、か
つ、被ボンディング物やキャピラリ2の先端や保持部材
7などの他の部材からトーチロッド3までの距離L3よ
り近い位置である。すなわち、距離の関係は、L2<L
1<L3で示される。
Next, a third embodiment of the present invention will be described. In this embodiment, a lightning rod 15 is provided near the torch rod 3. The position where the lightning rod 15 is provided is such that when the capillary 2 moves in the vertical and horizontal direction to form the ball 1a, the lightning rod 15 moves from the torch rod 3 to the torch rod 3.
The distance L1 to the tip of the wire 1 (position of the ball 1a) which is derived from the capillary 2 and should be in a predetermined position in advance.
From the torch rod 3 to the torch rod 3, and is closer to the torch rod 3 from the to-be-bonded object, the tip of the capillary 2, and other members such as the holding member 7. That is, the relationship of distance is L2 <L
1 <L3.

【0029】このように構成したことにより、キャピラ
リ2の先端に所定の長さのワイヤ1がなく、先端に放電
されない場合、トーチロッド3からの放電による電気火
花がキャピラリ2の先端のワイヤ1以外に生じることが
なく、避雷針15に放電されるので、半導体チップ4や
基板5の損傷を防止することができる。また、仮にボン
ディングに失敗したワイヤ12の先端12aが避雷針1
5からトーチロッド3までの距離L1より近い位置に位
置した場合でも、前記第一第二実施例で示したように、
ステージ6や保持部材7に絶縁部材13,14を設けた
ことにより、半導体チップ4や基板5などの被ボンディ
ング物にワイヤ12を介して放電されることがなく、被
ボンディング物の損傷を防止することができる。
With this configuration, when there is no wire 1 having a predetermined length at the tip of the capillary 2 and no discharge is made at the tip, electric sparks due to discharge from the torch rod 3 are other than the wire 1 at the tip of the capillary 2. Since the lightning rod 15 is discharged without being generated, it is possible to prevent the semiconductor chip 4 and the substrate 5 from being damaged. Further, if the tip 12a of the wire 12 that has failed to be bonded is the lightning rod 1
Even if it is located at a position closer to the torch rod 3 than the distance L1 from 5 as shown in the first and second embodiments,
By providing the insulating members 13 and 14 on the stage 6 and the holding member 7, the object to be bonded such as the semiconductor chip 4 and the substrate 5 is not discharged through the wire 12, and the object to be bonded is prevented from being damaged. be able to.

【0030】また、前記各実施例では、ステージ6は絶
縁部材13で覆われていたが、絶縁部材13で覆うこと
に代えて、ステージ6自体を絶縁部材で形成するように
してもよい。特に、ステージ6上を被ボンディング物が
移動するので、耐摩耗性の高い材料がよく、例えば、絶
縁部材を耐摩耗性の高いセラミックで形成するようにし
てもよい。
Although the stage 6 is covered with the insulating member 13 in each of the above embodiments, the stage 6 itself may be formed with an insulating member instead of being covered with the insulating member 13. In particular, since the object to be bonded moves on the stage 6, a material having high wear resistance is preferable, and for example, the insulating member may be made of ceramic having high wear resistance.

【0031】また、ビス9も絶縁性を備えた耐熱性の合
成樹脂から形成すれば、ステージ6の絶縁性が高まり、
半導体チップ4や基板5の損傷を防止することができ
る。また、ワイヤ1の先端に確実に放電することで、ボ
ール1aを形成することができ、安定したボンディング
作業を行うことができる。
If the screw 9 is also made of a heat-resistant synthetic resin having an insulating property, the insulating property of the stage 6 is enhanced,
It is possible to prevent the semiconductor chip 4 and the substrate 5 from being damaged. Further, by reliably discharging the tip of the wire 1, the ball 1a can be formed and a stable bonding operation can be performed.

【0032】[0032]

【発明の効果】以上、本発明により、初期の目的を達成
することができ、半導体チップなどの被ボンディング物
への放電を防止し、被ボンディング物の不良の発生を防
止する。また、安定したボンディング作業が行えるワイ
ヤボンディング装置を提供することができる。
As described above, according to the present invention, it is possible to achieve the initial purpose, prevent discharge to an object to be bonded such as a semiconductor chip, and prevent occurrence of defects in the object to be bonded. Further, it is possible to provide a wire bonding apparatus that can perform stable bonding work.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第一実施例の断面図である。FIG. 1 is a sectional view of a first embodiment of the present invention.

【図2】本発明の第二実施例の断面図である。FIG. 2 is a sectional view of a second embodiment of the present invention.

【図3】本発明の第三実施例の断面図である。FIG. 3 is a sectional view of a third embodiment of the present invention.

【図4】従来例の断面図である。FIG. 4 is a sectional view of a conventional example.

【符号の説明】[Explanation of symbols]

1 ワイヤ 1a ボール 2 キャピラリ 3 トーチロッド 4 半導体チップ(被ボンディング物) 5 基板(被ボンディング物) 5a スルーホール 6 ステージ 7 保持部材 12 ワイヤ 13,14 絶縁部材 15 避雷針 1 wire 1a ball 2 capillaries 3 torch rod 4 Semiconductor chip (object to be bonded) 5 Substrate (object to be bonded) 5a through hole 6 stages 7 Holding member 12 wires 13,14 Insulation member 15 lightning rod

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 ワイヤを導出するキャピラリと、このキ
ャピラリから導出されたワイヤの先端に電気火花を飛ば
してボールを形成するトーチロッドと、前記ワイヤでボ
ンディングされる被ボンディング物を載置するステージ
と、前記被ボンディング物を前記ステージとで保持する
保持部材とを備えたワイヤボンディング装置において、
前記ステージと前記保持部材を絶縁部材で覆ったことを
特徴とするワイヤボンディング装置。
1. A capillary for drawing out a wire, a torch rod for forming a ball by flying electric sparks at the tip of the wire drawn out from the capillary, and a stage for mounting an object to be bonded by the wire. A wire bonding apparatus including a holding member that holds the object to be bonded with the stage,
A wire bonding apparatus characterized in that the stage and the holding member are covered with an insulating member.
【請求項2】 ワイヤを導出するキャピラリと、このキ
ャピラリから導出されたワイヤの先端に電気火花を飛ば
してボールを形成するトーチロッドと、前記ワイヤでボ
ンディングされる被ボンディング物を載置するステージ
と、前記被ボンディング物を前記ステージとで保持する
保持部材とを備えたワイヤボンディング装置において、
前記ステージの少なくとも前記被ボンディング物を載置
する部分に絶縁部材で覆うとともに前記保持部材の少な
くとも前記被ボンディング物と接触する部分を絶縁部材
で覆ったことを特徴とするワイヤボンディング装置。
2. A capillary for drawing out a wire, a torch rod for forming a ball by flying an electric spark at the tip of the wire drawn out from the capillary, and a stage for mounting an object to be bonded by the wire. A wire bonding apparatus including a holding member that holds the object to be bonded with the stage,
A wire bonding apparatus, characterized in that at least a portion of the stage on which the object to be bonded is placed is covered with an insulating member, and at least a portion of the holding member that comes into contact with the object to be bonded is covered with an insulating member.
【請求項3】 ワイヤを導出するキャピラリと、このキ
ャピラリから導出されたワイヤの先端に電気火花を飛ば
してボールを形成するトーチロッドと、前記ワイヤでボ
ンディングされる被ボンディング物を載置するステージ
と、前記被ボンディング物を前記ステージとで保持する
保持部材とを備えたワイヤボンディング装置において、
前記ステージを絶縁部材で形成するとともに前記保持部
材を絶縁部材で覆ったことを特徴とするワイヤボンディ
ング装置。
3. A capillary for drawing out a wire, a torch rod for forming a ball by flying electric sparks at the tip of the wire drawn out from the capillary, and a stage for mounting an object to be bonded by the wire. A wire bonding apparatus including a holding member that holds the object to be bonded with the stage,
A wire bonding apparatus, wherein the stage is formed of an insulating member and the holding member is covered with an insulating member.
【請求項4】 ワイヤを導出するキャピラリと、このキ
ャピラリから導出されたワイヤの先端に電気火花を飛ば
してボールを形成するトーチロッドと、前記ワイヤでボ
ンディングされる被ボンディング物を載置するステージ
と、前記被ボンディング物を前記ステージとで保持する
保持部材とを備えたワイヤボンディング装置において、
前記ステージを絶縁部材で形成するとともに前記保持部
材の少なくとも前記被ボンディング物と接触する部分を
絶縁部材で覆ったことを特徴とするワイヤボンディング
装置。
4. A capillary for drawing out a wire, a torch rod for forming a ball by flying electric sparks at the tip of the wire drawn out from the capillary, and a stage for mounting an object to be bonded by the wire. A wire bonding apparatus including a holding member that holds the object to be bonded with the stage,
A wire bonding apparatus, wherein the stage is formed of an insulating member, and at least a portion of the holding member that comes into contact with the object to be bonded is covered with an insulating member.
【請求項5】 前記ステージを形成する前記絶縁部材が
セラミックからなることを特徴とする請求項3または4
記載のワイヤボンディング装置。
5. The insulating member forming the stage is made of ceramic.
The wire bonding apparatus described.
【請求項6】 前記トーチロッドの近傍に避雷針を設け
たことを特徴とする請求項1から請求項5の何れかに記
載のワイヤボンディング装置。
6. The wire bonding apparatus according to claim 1, further comprising a lightning rod provided near the torch rod.
JP2000283791A 2000-09-13 2000-09-13 Wire bonding equipment Expired - Fee Related JP3381910B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000283791A JP3381910B2 (en) 2000-09-13 2000-09-13 Wire bonding equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000283791A JP3381910B2 (en) 2000-09-13 2000-09-13 Wire bonding equipment

Publications (2)

Publication Number Publication Date
JP2002093846A JP2002093846A (en) 2002-03-29
JP3381910B2 true JP3381910B2 (en) 2003-03-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
JP (1) JP3381910B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037131A (en) * 2001-07-25 2003-02-07 Sanyo Electric Co Ltd Bonding machine
JP6604932B2 (en) * 2016-11-29 2019-11-13 三菱電機株式会社 Semiconductor manufacturing equipment

Also Published As

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JP2002093846A (en) 2002-03-29

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