JPH06244230A - Manufacturing method of bonding electrode and device having the same - Google Patents

Manufacturing method of bonding electrode and device having the same

Info

Publication number
JPH06244230A
JPH06244230A JP5155693A JP5155693A JPH06244230A JP H06244230 A JPH06244230 A JP H06244230A JP 5155693 A JP5155693 A JP 5155693A JP 5155693 A JP5155693 A JP 5155693A JP H06244230 A JPH06244230 A JP H06244230A
Authority
JP
Japan
Prior art keywords
thick film
bonding
aluminum wire
junction
film conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5155693A
Other languages
Japanese (ja)
Inventor
Rikiya Kamimura
力也 上村
Yoshitaka Nagayama
義高 永山
Yuji Omi
裕司 大見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP5155693A priority Critical patent/JPH06244230A/en
Publication of JPH06244230A publication Critical patent/JPH06244230A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/481—Disposition
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L2224/852—Applying energy for connecting
    • H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
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    • H01L2224/85909—Post-treatment of the connector or wire bonding area
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    • H01L2224/85951—Forming additional members, e.g. for reinforcing
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    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

PURPOSE:To provide the device having the aluminum wire bonding resistant to unfavorable environment. CONSTITUTION:A figure (a) represents the first aluminum wire(AW) bonding(BN) step while (c) represents the heating step of the second BN step. In order to bond AW1 onto a thick film conductor 2 formed on a ceramic substrate 4 in the step (a), the AW1 is applied to a connection part using a BN tools 3 to impress the connection part with ultrasonic oscillation (A) for the formation of a junction. As shown in an enlarged figure (b) representing the junction state, there are frits 5 and holes 6 inside the thick film 2 while the AW 1 is junctioned with the metallic compoment of the thick film 2 only on the rugged part in the interface between the AW 1 and the thick film 2. Since this junction is only partial, when the junction part is properly irradiated with laser beams 7 as the second BN step in order to assure this junction, the area of the junction part in the interface can be increased as shown in the figure (d). Furthermore, this invention can provide this device with the strength exceeding the conventional one.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は厚膜導体にアルミワイヤ
ーボンディング電極を形成した装置およびそのボンディ
ング電極を形成する製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus in which an aluminum wire bonding electrode is formed on a thick film conductor and a manufacturing method for forming the bonding electrode.

【０００２】[0002]

【従来の技術】従来、主に半導体装置などで半導体素子
と回路基板との回路を形成するのに金属細線（ワイヤ
ー）をボンディングする方法が用いられている。これは
微小な電極と電極とを金やアルミなどの微細なリード線
でレーザーなどで電極部にスポット溶着させて回路を形
成するものである。接合を形成する方法としてはその他
に超音波振動を用いて圧着する方法があり、これらを同
時に使用する場合もある。一方、基板側として、電極は
導体箔を基板に被着形成したものや厚膜ペーストをスク
リーン印刷して焼成したものなどがある。厚膜導体にワ
イヤーボンディングを施すものについては、その基板の
製造の容易さから、安価に入手出来る材料で容易に製造
できることを目的とするものが多く、そのためにワイヤ
ーは安価なアルミワイヤーを用いることが多い。アルミ
は溶融接合をすると酸化してしまうため接合は困難であ
り加熱溶着方法は適用できない。また、アルミはもとも
と表面に酸化膜を自然に形成しており、専ら超音波圧着
法で接合させることがほとんどである。2. Description of the Related Art Conventionally, a method of bonding fine metal wires has been used mainly for forming a circuit between a semiconductor element and a circuit board in a semiconductor device or the like. This is to form a circuit by spot welding minute electrodes and electrodes with a fine lead wire such as gold or aluminum to the electrode portion with a laser or the like. As another method of forming a bond, there is a method of pressure bonding using ultrasonic vibration, and these may be used simultaneously. On the other hand, on the substrate side, the electrodes include those in which a conductor foil is adhered to the substrate and those in which thick film paste is screen-printed and fired. Many of the thick-film conductors that are wire-bonded are intended to be easily manufactured from inexpensive materials because of the ease of manufacturing the substrate, and therefore inexpensive aluminum wires should be used. There are many. Since aluminum is oxidized when melt-bonded, the bonding is difficult and the heat welding method cannot be applied. Also, since aluminum originally has an oxide film naturally formed on the surface, it is almost always bonded by ultrasonic pressure bonding.

【０００３】[0003]

【発明が解決しようとする課題】しかしながら、厚膜導
体に対しては、厚膜中に含まれるガラスや無機酸化物
（これらをフリットと記す）、そのほか気孔、凹凸など
が厚膜導体表面にも存在するため、金属薄膜に対する接
合のように確実なワイヤー接合強度が得られず、車載用
等の悪環境に対しては不十分なものとなっていた。また
それを回避するため条件の厳しい車載用等の厚膜を用い
た基板に対するワイヤーボンディングは厚膜導体上に金
属チップを半田付けし、そのチップにアルミワイヤーを
ボンディングしていたという経緯がある。そのため金属
チップを実装するためのスペースが基板に必要となるう
え、その実装工程を組み込まなければならず、元々の目
的である安価、容易な製造とはいえなくなっていたとい
う問題がある。従って本発明は、直接厚膜導体に対して
アルミワイヤーで強固なボンディングを施した装置を提
供することを目的とし、通常の銀パラジウム厚膜導体上
にアルミワイヤーを直接、信頼性よく接合できる条件が
見出されたので、本発明を提案するに到った。However, for thick-film conductors, glass and inorganic oxides contained in the thick film (these are referred to as frit), as well as pores and irregularities, are also present on the surface of the thick-film conductor. Since it exists, a reliable wire bonding strength like the bonding to the metal thin film cannot be obtained, which is insufficient for a bad environment such as for vehicle mounting. In order to avoid this, wire bonding to a substrate using a thick film for in-vehicle use under severe conditions has a history of soldering a metal chip on a thick film conductor and bonding an aluminum wire to the chip. Therefore, there is a problem that a space for mounting the metal chip is required on the substrate and the mounting process has to be incorporated, which makes it impossible to say that the original purpose is inexpensive and easy manufacturing. Therefore, an object of the present invention is to provide a device in which a thick film conductor is firmly bonded with an aluminum wire, and conditions under which an aluminum wire can be directly and reliably bonded onto a normal silver-palladium thick film conductor. Therefore, the present invention has been proposed.

【０００４】[0004]

【課題を解決するための手段】上記の課題を解決するた
めの第一発明の構成は、回路基板に機能を有する素子と
厚膜導体とを有し、その素子と前記厚膜導体との間の配
線にアルミワイヤーでボンディングされる装置におい
て、当該アルミワイヤーが直接厚膜導体に接合されたこ
とを特徴とする。またそれを実現するための第二発明の
構成は、回路基板に機能を有する素子と厚膜導体とを有
し、その素子と前記厚膜導体との間の配線にアルミワイ
ヤーでボンディングされる装置において、当該アルミワ
イヤーを厚膜導体に超音波圧着法で接合部を形成し、そ
の後、その接合部のみをスポット加熱装置で局部的に加
熱して接合強化することを特徴とする。According to a first aspect of the invention for solving the above problems, a circuit board has an element having a function and a thick film conductor, and the element and the thick film conductor are provided between the element and the thick film conductor. In the device for bonding the wiring to the wire with an aluminum wire, the aluminum wire is directly bonded to the thick film conductor. Further, a structure of the second invention for realizing the same is a device in which an element having a function and a thick film conductor are provided on a circuit board, and the wiring between the element and the thick film conductor is bonded by an aluminum wire. In the above, the aluminum wire is joined to the thick film conductor by a ultrasonic pressure bonding method to form a joint, and then only the joint is locally heated by a spot heating device to strengthen the joint.

【０００５】[0005]

【作用】厚膜導体にアルミワイヤーを超音波圧着法でボ
ンディングすると、アルミは超音波振動により厚膜導体
とお互いに表面を擦り合わせ、塑性変形を起こしつつ表
面が削り取られ、未酸化部分が露出して厚膜導体の金属
成分と密着していく。ただし、厚膜導体は表面の凹凸が
あり、全ての表面がアルミと擦られず、厚膜導体の最表
面層の出っ張った部分の一部分でのみ密着状態となる。
その上、厚膜表面部にもフリットが含まれるため、アル
ミワイヤーは導電に寄与する金属系の厚膜導体材料部分
のみと接合状態となる。この超音波圧着で緩やかな接合
を形成したのちに、ワイヤーの接合部分のみに対してス
ポット加熱すると、接合を形成した部分が相互に拡散を
起こし、融着が広がって密着部分の接合強度が増し、確
実な接合となる。[Function] When an aluminum wire is bonded to the thick film conductor by ultrasonic pressure bonding, the aluminum rubs the surface of the thick film conductor against each other by ultrasonic vibration, causing the plastic deformation and scraping the surface, exposing the unoxidized portion. Then, it adheres to the metal component of the thick film conductor. However, the thick film conductor has irregularities on the surface, and the entire surface is not rubbed with aluminum, and only a part of the protruding portion of the outermost surface layer of the thick film conductor is brought into close contact.
In addition, since the frit is also included in the thick film surface portion, the aluminum wire is in a bonded state only with the metal-based thick film conductor material portion that contributes to conductivity. After forming a gentle bond by this ultrasonic pressure bonding, if spot heating is applied only to the bonded part of the wire, the bonded parts will diffuse to each other and the fusion will spread, increasing the bonding strength of the adhered part. It will be a reliable joint.

【０００６】[0006]

【発明の効果】アルミワイヤーと厚膜導体との接合が密
着性良く確実に形成でき、従来厚膜導体に対して、直接
アルミワイヤーを強固にボンディングすることはできな
かったが、本発明により可能となり、車載時等の悪環境
な条件でも使用できるようになった。また、余分な金属
チップが不要となり、装置が小型化できた。EFFECTS OF THE INVENTION The aluminum wire and the thick film conductor can be firmly bonded to each other with good adhesiveness, and the aluminum wire could not be firmly bonded directly to the conventional thick film conductor. Therefore, it can be used even in a bad environment such as when mounted on a vehicle. In addition, an extra metal chip is unnecessary, and the device can be downsized.

【０００７】[0007]

【実施例】以下、本発明を具体的な実施例に基づいて説
明する。図１(a) は第一のアルミワイヤーボンディング
工程を示し、図１(b) はその接合状態、図１(c) は第二
のボンディング工程の加熱工程、図１(d) は加熱後の接
合状態を示す。また、ボンディング装置の概略図を図２
に示す。EXAMPLES The present invention will be described below based on specific examples. Figure 1 (a) shows the first aluminum wire bonding step, Figure 1 (b) shows the bonding state, Figure 1 (c) shows the heating step of the second bonding step, and Figure 1 (d) shows the state after heating. Shows the joined state. In addition, a schematic diagram of the bonding apparatus is shown in FIG.
Shown in.

【０００８】まず図１(a) で、低温で焼成したセラミッ
ク基板４の上に形成された厚膜導体２にアルミワイヤー
１をボンディングするため、ボンディング工具３により
アルミワイヤー１を接続個所にあてがって、超音波振動
を印加し、ゆるやかな接合を形成する。接合完了後は、
図示していないワイヤーカッタで余分なアルミワイヤー
１を切断する。なお、アルミワイヤー１の他の先端は素
子など別の接合部にボンディングされている。接合の状
態を拡大した図が図１(b) で、厚膜２の内部はフリット
５や空孔６があり、アルミ１とは界面の凸部でのみ厚膜
の金属成分と接合している。その接合は超音波振動の擦
れによる部分的な接合のみであり、界面の凹凸のために
接合界面には空孔も存在している。First, in FIG. 1A, in order to bond the aluminum wire 1 to the thick film conductor 2 formed on the ceramic substrate 4 fired at a low temperature, the aluminum wire 1 is applied to the connection point by the bonding tool 3. , Apply ultrasonic vibration to form a loose bond. After joining,
The excess aluminum wire 1 is cut with a wire cutter (not shown). The other end of the aluminum wire 1 is bonded to another joint such as an element. Fig. 1 (b) is an enlarged view of the state of bonding. There are frit 5 and holes 6 inside the thick film 2, and the thick film 2 is bonded to the metal component of the thick film only at the convex portion at the interface. . The joining is only partial joining due to the rubbing of ultrasonic vibration, and due to the unevenness of the interface, holes are also present at the joining interface.

【０００９】このゆるやかな接合を確実なものとするた
め、第二のボンディング工程としてスポット加熱を接合
部に施す。ここでは制御性の高いレーザービームを用い
て瞬間的に高温状態とし、界面の金属接合部の溶着を拡
大させる。この様子を示したのが図１(c) である。図１
(a) で接合した個所にレーザービーム７を照射する。す
ると、図１(d) のように界面の接合部分の面積は増大
し、接合強度が増す。ちなみにスポット加熱ではない方
法、即ち基板を含めた装置全体を加熱する場合は、他の
部分に対する影響のためボンディング部分の接合強度を
あげるほどの加熱ができず、効果がないことが確認され
ている。In order to ensure this loose joining, spot heating is applied to the joining portion as a second bonding step. Here, a laser beam having a high controllability is used to momentarily bring it to a high temperature state to expand the welding of the metal joint portion at the interface. This situation is shown in Fig. 1 (c). Figure 1
The laser beam 7 is applied to the part joined in (a). Then, as shown in FIG. 1 (d), the area of the bonded portion at the interface increases and the bonding strength increases. By the way, it is confirmed that if the method is not spot heating, that is, if the entire device including the substrate is heated, it cannot be heated enough to increase the bonding strength of the bonding part due to the influence on other parts, and it is not effective. .

【００１０】本実施例の超音波とレーザーを用いたボン
ディングの場合、加えるエネルギーは最適範囲が存在す
るので、その一例として図３に示しておく。超音波振動
のエネルギーを過剰に印加するとアルミワイヤーや厚膜
導体自身が破断したり、潰れすぎてぼろぼろになったり
してしまうため、超音波のみで接合強度を確保するよう
に形成することは出来ず、図３のグラフに示す２. ４Ｄ
のラインがほぼ上限にあたる。なおこの値の意味は、使
用するワイヤーの直径を１Ｄとしたときに超音波で圧着
される部分の広がる幅を表し、潰れ幅という。また、レ
ーザービームについてはエネルギー密度が高すぎたり、
照射時間が長すぎたりすると、やはり接合部全体が溶融
してしまう。ちなみに本実施例では、超音波振動のエネ
ルギー印加は、潰れ幅が１. ２Ｄ〜２. ４Ｄの範囲で、
レーザーのエネルギー印加は５〜４０００(Joule/mm2)
の間で適正なボンディングが形成できた。In the case of bonding using ultrasonic waves and a laser according to this embodiment, since the energy to be applied has an optimum range, it is shown in FIG. 3 as an example. If too much ultrasonic vibration energy is applied, the aluminum wire or thick-film conductor itself may break, or it may become too crushed and shattered.Therefore, it is not possible to form the bonding strength only with ultrasonic waves. No, 2.4D shown in the graph of Figure 3
Line almost corresponds to the upper limit. Note that the meaning of this value represents the width of expansion of the portion crimped by ultrasonic waves when the diameter of the wire used is 1D, and is called the collapsed width. Also, the energy density of the laser beam is too high,
If the irradiation time is too long, the entire joint will also melt. By the way, in the present embodiment, the energy application of ultrasonic vibration has a crush width of 1.2D to 2.4D,
Laser energy application is 5-4000 (Joule / mm 2 )
A proper bond could be formed between the two.

【００１１】本発明の接合によって、超音波振動の接合
のみを施した場合（レーザー加熱０(Joule/mm2) ）で
は、図４に示すように５０％以下の接続信頼性しかな
く、良好な環境に対してのみしか利用できなかったもの
が、第二の工程の加熱によって接続信頼性が大幅に向上
し、充分車載用に適用できる値を示している。なお、こ
の図４の信頼性の値は試験的にサンプルを作り引張り破
壊試験を行った結果を示し、製品の歩留りではない。ま
た、従来のチップを用いた場合の破壊試験では、本発明
におけるレーザー加熱処理が６０(Joule/mm2) の８５％
の信頼性の水準に当たり、本発明では従来と同等以上の
強度が得られている。従って車載用に充分な強度を有し
ているワイヤーボンディングであることが示された。When only ultrasonic vibration bonding is applied by the bonding of the present invention (laser heating 0 (Joule / mm 2 )), as shown in FIG. 4, there is only 50% or less connection reliability, which is excellent. Although it could only be used for the environment, the connection reliability was greatly improved by the heating in the second step, and it shows a value that can be sufficiently applied to in-vehicle use. The reliability values in FIG. 4 indicate the results of tensile breaking tests by making samples on a trial basis, and are not product yields. Further, in the destructive test using the conventional chip, the laser heat treatment in the present invention was 85% of 60 (Joule / mm 2 ).
In the present invention, a strength equal to or higher than that of the conventional one is obtained, which corresponds to the level of reliability. Therefore, it was shown that the wire bonding has sufficient strength for vehicle mounting.

【００１２】なお、スポット加熱装置としては、レーザ
ービームの他に、マイロク波ビーム、赤外線集光装置な
どがあげられる。As the spot heating device, there may be mentioned, in addition to the laser beam, a myloch wave beam, an infrared condensing device and the like.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明のボンディング工程を示す模式断面図。FIG. 1 is a schematic cross-sectional view showing a bonding process of the present invention.

【図２】ボンディング装置の概略図。FIG. 2 is a schematic view of a bonding apparatus.

【図３】ボンディング形成の印加エネルギー条件の一例
を示す範囲図。FIG. 3 is a range diagram showing an example of an applied energy condition for bonding formation.

【図４】引っ張り破壊の試験結果図。FIG. 4 is a diagram showing the result of a tensile fracture test.

【符号の説明】[Explanation of symbols]

１ アルミワイヤー ２ 厚膜導体 ３ ボンディング工具 ４ セラミック基板 ５ フリット ６ 空孔 ７ レーザービーム 1 Aluminum Wire 2 Thick Film Conductor 3 Bonding Tool 4 Ceramic Substrate 5 Frit 6 Hole 7 Laser Beam

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 回路基板に機能を有する素子と厚膜導体
とを有し、前記素子と前記厚膜導体との間の配線がアル
ミワイヤーでボンディングされる装置において、 前記アルミワイヤーが前記厚膜導体に直接接合されたこ
とを特徴とするボンディング電極を有する装置。1. A device comprising a circuit board having an element having a function and a thick film conductor, wherein the wiring between the element and the thick film conductor is bonded by an aluminum wire, wherein the aluminum wire is the thick film. A device having a bonding electrode, which is directly bonded to a conductor. 【請求項２】 回路基板に機能を有する素子と厚膜導体
とを有し、前記素子と前記厚膜導体との間の配線がアル
ミワイヤーでボンディングされる装置の形成方法におい
て、 前記アルミワイヤーを前記厚膜導体に超音波圧着法で接
合部を形成し、 その後、前記接合部のみをスポット加熱装置で局部的に
加熱し接合強化することを特徴とするボンディング電極
の製造方法。2. A method of forming a device, wherein a circuit board has an element having a function and a thick film conductor, and wiring between the element and the thick film conductor is bonded by an aluminum wire, wherein the aluminum wire is A method of manufacturing a bonding electrode, wherein a bonding portion is formed on the thick film conductor by an ultrasonic pressure bonding method, and then only the bonding portion is locally heated by a spot heating device to strengthen the bonding.
JP5155693A 1993-02-16 1993-02-16 Manufacturing method of bonding electrode and device having the same Pending JPH06244230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5155693A JPH06244230A (en) 1993-02-16 1993-02-16 Manufacturing method of bonding electrode and device having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5155693A JPH06244230A (en) 1993-02-16 1993-02-16 Manufacturing method of bonding electrode and device having the same

Publications (1)

Publication Number Publication Date
JPH06244230A true JPH06244230A (en) 1994-09-02

Family

ID=12890272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5155693A Pending JPH06244230A (en) 1993-02-16 1993-02-16 Manufacturing method of bonding electrode and device having the same

Country Status (1)

Country Link
JP (1) JPH06244230A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271601B1 (en) 1998-05-12 2001-08-07 Hitachi, Ltd. Wire bonding method and apparatus and semiconductor device
JP2005183588A (en) * 2003-12-18 2005-07-07 Fujikura Ltd Junction and its production process
JP2005183451A (en) * 2003-12-16 2005-07-07 Fujikura Ltd Bonding body and manufacturing method thereof
US7772031B2 (en) 2006-01-24 2010-08-10 Nec Electronics Corporation Semiconductor apparatus manufacturing method
JP2016072500A (en) * 2014-09-30 2016-05-09 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP2019020379A (en) * 2017-07-18 2019-02-07 株式会社ジェイテクト Optical nondestructive inspection method and optical nondestructive inspection device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271601B1 (en) 1998-05-12 2001-08-07 Hitachi, Ltd. Wire bonding method and apparatus and semiconductor device
JP2005183451A (en) * 2003-12-16 2005-07-07 Fujikura Ltd Bonding body and manufacturing method thereof
JP4526813B2 (en) * 2003-12-16 2010-08-18 株式会社フジクラ Manufacturing method of joined body
JP2005183588A (en) * 2003-12-18 2005-07-07 Fujikura Ltd Junction and its production process
JP4526814B2 (en) * 2003-12-18 2010-08-18 株式会社フジクラ Manufacturing method of joined body
US7772031B2 (en) 2006-01-24 2010-08-10 Nec Electronics Corporation Semiconductor apparatus manufacturing method
JP2016072500A (en) * 2014-09-30 2016-05-09 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP2019020379A (en) * 2017-07-18 2019-02-07 株式会社ジェイテクト Optical nondestructive inspection method and optical nondestructive inspection device

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