JPS61198737A - Wire bonding device - Google Patents

Wire bonding device

Info

Publication number
JPS61198737A
JPS61198737A JP60037490A JP3749085A JPS61198737A JP S61198737 A JPS61198737 A JP S61198737A JP 60037490 A JP60037490 A JP 60037490A JP 3749085 A JP3749085 A JP 3749085A JP S61198737 A JPS61198737 A JP S61198737A
Authority
JP
Japan
Prior art keywords
capillary
gas
arm
bonding
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60037490A
Other languages
Japanese (ja)
Inventor
Koichiro Atsumi
幸一郎 渥美
Tetsuo Ando
安藤　鉄男
Yukihiro Iketani
之宏 池谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60037490A priority Critical patent/JPS61198737A/en
Publication of JPS61198737A publication Critical patent/JPS61198737A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To reduce oxidation in a capillary by mounting a gas inflow tube into the capillary to a joining arm. CONSTITUTION:A small tube 6 for a capillary 4 is fitted into a through-hole 5 at the nose of a horn 3. One end of a gas introducing hole 7 in an arm 2 is coupled with the through-hole 5 and the other end with a delivery tube 8 on the arm 2 side. The hole 7 is communicated with the small tube 6 through a hole 9 in the side wall of the capillary 4 when the capillary 4 is fitted, and a gas is lead out in both the upper and lower directions of the capillary when the gas is introduced. When an Al wire is ultrasonic-bonded under the gas current, the heat of the Al wire is reduced considerably, and a thermal oxidation reaction can be improved. A gas introducing means does not function as the load of vibrations because the inside of arm itself is provided with the means, and the load of vibrations is reduced remarkably because the delivery tube 8 is shaped at the central section of the arm.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明はワイヤボンディング装置に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a wire bonding device.

〔発明の技術的背景およびその問題点〕ワイヤ特に卑金
属ワイヤを用いてワイヤボンディングする技術が開発さ
れている。現在、リワイヤをウェッジボンディングする
装置は発売されているが、特にＡ１ワイヤを含め各種卑
金属ワイヤのポールボンディング装置については多数の
メーカによって開発検討されている。[Technical background of the invention and its problems] Wire bonding techniques using wires, particularly base metal wires, have been developed. Currently, devices for wedge bonding rewires are on the market, and in particular, many manufacturers are developing and considering pole bonding devices for various base metal wires, including A1 wire.

これら開発の主な課題はボンディングワイヤの酸化の問
題である。この酸化対策として、電気トーチによるボー
ル形成時不活性ガス又は還元性ガスを吹きつけながらポ
ールを形成し、ポールボンディングを行うことが提案さ
れている。The main challenge in these developments is the problem of oxidation of bonding wires. As a countermeasure against this oxidation, it has been proposed to form the poles while blowing inert gas or reducing gas during ball formation using an electric torch, and perform pole bonding.

例えば酸化対策として実開昭５９−２６２４６号にて提
案されている。また本発明者は刀口熱されたボンディン
グ用ヒータステージの熱が上昇し、この熱によυワイヤ
が走行路を走行中に弱い熱酸化を受けることが判り、こ
の熱酸化対策として特願昭５９−１７６５８２号をすで
に提案している。For example, as a countermeasure against oxidation, it has been proposed in Japanese Utility Model Application No. 59-26246. In addition, the inventor of the present invention found that the heat of the heated bonding heater stage rose, and that the heat caused the υ wire to undergo weak thermal oxidation while running on the running path. -176582 has already been proposed.

しかしながら、上記ポールボンディングの着実なボンデ
ィング性を開発した結果、上記ヒータステージからの熱
及びボール形成時のスパーク熱などＫよりキャピラリ内
走行中のワイヤも加熱され。However, as a result of developing the stable bonding performance of the pole bonding, the wire running inside the capillary is also heated by the heat from the heater stage and the spark heat during ball formation.

このキャピラリ内でも、かなりワイヤの酸化が進行して
いることが判った。It was found that oxidation of the wire had progressed considerably within this capillary as well.

このキャピラリ内を走行するワイヤの熱酸化を防止する
手段として、キャピラリ内に冷却ガスを挿通させること
が考えられる。このキャピラリにガスを挿通ぜせる手段
として第４図に示めすようにキャピラリ（４１）の中間
位置にガス導入口（６）を設け。As a means of preventing thermal oxidation of the wire running inside the capillary, it is conceivable to introduce cooling gas into the capillary. As a means for introducing gas into this capillary, a gas inlet (6) is provided at an intermediate position of the capillary (41) as shown in FIG.

この導入口（６）にガス供給用のチューブ０３を接続配
設し、とのチ為−プ（４３からシールド用のガスをキャ
ピラリ内に流入させるようＫしたものがある。A tube 03 for gas supply is connected to this inlet port (6), and a shielding gas is allowed to flow into the capillary from a tip (43).

ところが、このようにキャピラリＧ４１）のボンディン
グアーム（財）から離隔した位置にガス導入手段を設け
ることは超音波ワイヤボンディング時にキャピラリ自身
の振動は勿論超音波ホーンの振動も妨げる問題がある。However, providing the gas introduction means at a position separated from the bonding arm of the capillary G41) as described above has the problem of interfering with not only the vibration of the capillary itself but also the vibration of the ultrasonic horn during ultrasonic wire bonding.

この現象はボンディングワイヤにボンディングのだめの
超音波が充分印加されない問題がある。This phenomenon has the problem that sufficient ultrasonic waves are not applied to the bonding wire during bonding.

一般にキャピラリを取着するボンディングアーム（旬は
超音波ホーンとして構成されておシ、この超音波ホーン
は先端で大きな振幅がとれるような構造になっているが
、このホーンの先端に超音波振動を阻害するような負荷
が取シつけられると。The bonding arm that attaches the capillary is generally configured as an ultrasonic horn. If a load is applied that inhibits the

ホーン先端のキャピラリーの取着される先端部の振幅は
著しく小さくなり、キャピラリ先端の振幅も小さくなっ
てしまう。従って第４図のようにキャピラリ（４υの先
端部にガス導入口（６）、チェープ（４３１などの部品
を取着することは振動が小さくなシ。The amplitude of the tip of the horn to which the capillary is attached becomes significantly small, and the amplitude of the tip of the capillary also becomes small. Therefore, attaching parts such as the gas inlet (6) and the chain (431) to the tip of the capillary (4υ) as shown in Figure 4 will reduce vibration.

望ましくない問題点がある。そこでチニープ（４３ヲで
きるだけ軽くシ、超音波振動の抵抗にならないように構
成すれば上記振幅の低下は抑えられるが。There are some undesirable problems. Therefore, if the chinipu (43) is made as light as possible so that it does not become a resistance to ultrasonic vibration, the above-mentioned decrease in amplitude can be suppressed.

キャピラリー（４υは殆んど振動しない。このためボン
ディング強度が低下する問題点がある。The capillary (4υ) hardly vibrates.Therefore, there is a problem that the bonding strength decreases.

〔発明の目的〕[Purpose of the invention]

この発明は上記点だ鑑みなされたもので、キャピラリ内
での酸化を軽減させたワイヤボンディング装置を提供す
るものである。The present invention has been made in view of the above points, and provides a wire bonding device in which oxidation within the capillary is reduced.

〔発明の概賛〕[Overview of the invention]

コノ発明はボンディングアームに取着されたキャピラリ
内にワイヤを挿通させると共にガスを流入させてワイヤ
ボンディングする装置において、上記キャピラリ内への
ガスの流入管をボンディングアームに設けたワイヤボン
ディング装置を得るものである。The present invention provides a wire bonding device in which a wire is inserted into a capillary attached to a bonding arm and a gas is introduced into the wire bonding device, in which a gas inflow pipe into the capillary is provided in the bonding arm. It is.

〔発明の実施例〕[Embodiments of the invention]

次に本発明装置を超音波を併用する熱圧着ワイヤボンデ
ィング装置に適用した実施例を図面を参照して説明する
。Next, an embodiment in which the device of the present invention is applied to a thermocompression wire bonding device that uses ultrasonic waves will be described with reference to the drawings.

〔実施例１〕 超音波併用熱圧着ワイヤボンディング装置は当業者にお
いて１周知であるからその詳細を省略する。[Example 1] Since the ultrasonic thermocompression wire bonding apparatus is well known to those skilled in the art, its details will be omitted.

即ち超音波発振源（１）例えば圧電体を内蔵した円柱状
ボンディングアーム（２）・・・（超音波ホーンの機能
を有する）の先端部（３）にキャピラリー（４）が取着
される。このキャピラリ（４）は上記アーム（２）に例
えば螺着される。すなわち、上記ホーン（２）のキャピ
ラリ（４）　、＋ａ付は部にはボンディングワイヤを挿
通させる貫通孔（５）例えば第１図（Ｃ）に示めすよう
に四角形状の貫通孔（５）が穿設されている。この貫通
孔（５）に螺旋（図示せず）が設けられ、キャピラリ（
４）の細管（６）と嵌合される。さらに上記アーム（２
）内には第１図四に示めすように長手方向に伸びる直径
例えば２Ｍ１１ｔ以下のガス導入孔（力が設けられてい
る。That is, a capillary (4) is attached to the tip (3) of an ultrasonic oscillation source (1), such as a cylindrical bonding arm (2) containing a piezoelectric body (having the function of an ultrasonic horn). This capillary (4) is, for example, screwed onto the arm (2). That is, the capillary (4) of the horn (2) has a through hole (5) in which the bonding wire is inserted, for example, a rectangular through hole (5) as shown in FIG. 1(C). It is perforated. A spiral (not shown) is provided in this through hole (5), and a capillary (
4) is fitted with the thin tube (6). Furthermore, the above arm (2
), as shown in FIG. 1, there is provided a gas inlet hole extending in the longitudinal direction and having a diameter of, for example, 2M11t or less.

この岬、入孔（力の一端は上記貫通孔（５）と結合し、
他端はアーム（２）の側壁に導孔する如く穿設されてい
る。この側壁導孔部には口出し管（８）が結合されてい
る。上記アーム（２）にキャピラリ（４）を取着した時
ガス導入孔（７）とキャピラリ（４）の細管（６）とが
結合する如くガス導入孔（７）と第１図ＣＤ）に示めす
如く係合するキャピラリ（４）の側壁には通孔（９）が
穿設されている。即ち、上記口出し管（８）にガス導入
管（図示せず）を結合し、ガスを導入するとガス導入孔
（７）を通ってキャピラリー（４）の通孔（９）からキ
ャピラリ（４）内細管（６）に導入、キャピラリ（４）
の上下両方向からガスが導出される構造になっている。This cape, the entrance hole (one end of the force is connected to the above-mentioned through hole (5),
The other end is bored in the side wall of the arm (2) so as to form a guide hole. An outlet pipe (8) is connected to this side wall guide hole. When the capillary (4) is attached to the arm (2), the gas introduction hole (7) and the thin tube (6) of the capillary (4) are connected as shown in Figure 1 CD). A through hole (9) is bored in the side wall of the female-engaging capillary (4). That is, a gas introduction pipe (not shown) is connected to the outlet pipe (8), and when gas is introduced, it passes through the gas introduction hole (7) and enters the capillary (4) from the through hole (9) of the capillary (4). Introduced into the thin tube (6), capillary (4)
The structure is such that gas is extracted from both the upper and lower directions.

このような径路にガスを流した状態でＡＪ線による超音
波ワイヤポンディングを実行すると、　ＡＪ−線の熱は
かなり緩和され、熱酸化反応を改善できる。さらにガス
導入手段をアーム（２）内アーム自身に設けたので、ホ
ーンやキャビ２１月４）に対して、振動への負荷となら
ず、キャピラリにガスを導入できる効果がある。さらに
ガス導入の口出し管（８）をアーム（２）の先端部（３
）Ｋ設けず中央部に設けているので振動に対する負荷は
著るしく軽減される。この口出し管（８）は第２図に示
めすように、ホーンの超音波振動Ｑυにおける筒器また
はその近傍の位置に設けることにより、超音波振動に対
する悪影響を最小にすることができる。これは第２図に
示めされているように振幅が最小の位置であるからであ
る。If ultrasonic wire pounding is performed using the AJ-line while gas is flowing through such a path, the heat of the AJ-line will be considerably alleviated, and the thermal oxidation reaction can be improved. Furthermore, since the gas introduction means is provided in the inner arm (2) itself, there is an effect that gas can be introduced into the capillary without causing vibration loads to the horn or the cavity. Furthermore, connect the gas introduction outlet pipe (8) to the tip (3) of the arm (2).
)K is not provided but is provided in the center, so the load against vibration is significantly reduced. As shown in FIG. 2, by providing this outlet pipe (8) at a position in or near the tube at the ultrasonic vibration Qυ of the horn, the adverse effect on the ultrasonic vibration can be minimized. This is because this is the position where the amplitude is minimum, as shown in FIG.

第１図（Ｂ）のようにキャピラリ（４）の側壁に穴（９
）を設けたくない場合には、第１図（Ｅ）のようにキャ
ピラリ（４）の上端からガスを導入するように構成して
もよい。この場合口出し管（８）から供給するガスの蝋
は１側根度多く供給する必要がある。As shown in Figure 1 (B), there are holes (9) in the side wall of the capillary (4).
), the capillary (4) may be configured so that the gas is introduced from the upper end thereof as shown in FIG. 1(E). In this case, the wax gas supplied from the outlet pipe (8) needs to be supplied in an amount larger than that on one side.

上記口出し管（８）から供給するガスとしては、還元性
ガス例えば鴇ガス、不活性ガス、Ｎ、ガスなどを用いる
ことができる。As the gas supplied from the outlet pipe (8), a reducing gas such as sulfur gas, inert gas, N, gas, etc. can be used.

このようなガスをキャビ２１月４）に流通させた状態で
ボンディングワイヤを挿通させ、キャピラリ（４）の先
端から突出したワイヤを還元性ガス雰囲気にてトーチ例
えば電気トーチをかけることによシ。A bonding wire is inserted while such a gas is flowing through the cavity (4), and the wire protruding from the tip of the capillary (4) is heated with a torch, for example, an electric torch, in a reducing gas atmosphere.

ワイヤ先端にボールを形成することができる。A ball can be formed at the tip of the wire.

さらにこのボールを用いて良好なボールボンディングを
実行できる。Furthermore, good ball bonding can be performed using this ball.

上記実施例では超音波ワイヤボンディングについて説明
したが、熱圧着ボンディング、超音波併用熱圧着ボンデ
ィングなどの装置に適用してもよい。Although ultrasonic wire bonding has been described in the above embodiments, the present invention may be applied to devices such as thermocompression bonding, ultrasonic combined thermocompression bonding, and the like.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明装置によればキャピラリー内
にガスを流入させる流入手段をキャピラリーヲ支持する
アームに設けたので超音波ボンディングでも振動に対す
る負荷を軽減した構造で酸化防止することができる。As explained above, according to the apparatus of the present invention, since the inflow means for flowing gas into the capillary is provided on the arm supporting the capillary, oxidation can be prevented even in ultrasonic bonding with a structure that reduces the load against vibration.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（Ａ）　（Ｂ）　（Ｃ）　（Ｄ）　（Ｅ）は本発
明装置の実施例を説明するための略図、第２図は第１図
（Ａ）の他の実施例説明図、第３図は従来のキャピラリ
ーへのガス導入手段説明図である。 １・・・圧電体、　　　　　２・−・ボンディングアー
ム４・・・キャピラリ、　　　　５・・・貫通孔７・・
・ガス導入孔、　　　８・・・口出し管９・・・通　孔 代理人　弁理士　　則　近　憲　佑 ほか１名 第１ｆｆｌ ＋Ａ＋ （［） 第１図 第２図 第　３　図 手続補正書（自発） Ｉｌｆ（Ｈ６σ６、Ｂ５日 特ｆＦ庁長官践 １、事件の表示 特願昭６０−３７４９０号 ２、発明の名称 ワイヤボンディング装置 ３、補正をする者 事件との関係　特許出願人 （３０７）　　株式会社　東芝 ４、代理人 〒１０５ 東京都港区芝浦−丁目１＃１号 明細書の発明の詳細な説明の欄 図　　面 ６、補正の内容 （１）明細書の第４頁第１４行目「第４図」を「第３図
」と補正する。 （２）明細書の第８頁第５行目「Ｈ重ガス」を「Ｈ１混
合ガス」と補正する。 （３）明細書の第４頁第１４行目「超音波ワイヤボンデ
ィング」を「超音波併用熱圧着ワイヤボンディング」と
補正する。 （４）図面のうち、第２図を別紙のとおり訂正する。 以上FIGS. 1(A), (B), (C), (D), and (E) are schematic diagrams for explaining embodiments of the device of the present invention, FIG. 2 is a diagram illustrating another embodiment of FIG. 1(A), FIG. 3 is an explanatory diagram of a conventional means for introducing gas into a capillary. DESCRIPTION OF SYMBOLS 1... Piezoelectric body, 2... Bonding arm 4... Capillary, 5... Through hole 7...
・Gas inlet hole, 8... Outlet pipe 9... Through hole Representative Patent attorney Nori Chika Kensuke and 1 other person 1ffl +A+ ([) Figure 1 Figure 2 Figure 3 Figure procedure amendment (voluntary) Ilf (H6σ6, B5 Japan Patent Office Commissioner Hajime 1, Indication of the case Patent Application No. 60-37490 2, Name of the invention Wire bonding device 3, Person making the amendment Relationship with the case Patent applicant (307) Toshiba Corporation 4 , Agent No. 1 #1, Shibaura-chome, Minato-ku, Tokyo 105 Drawings in the detailed description of the invention in the specification Section 6 Contents of amendment (1) Page 4, line 14 of the specification "Figure 4 " is corrected to "Figure 3". (2) "H heavy gas" on page 8, line 5 of the specification is corrected to "H1 mixed gas". (3) Page 4, line 5 of the specification, 14 The line "Ultrasonic wire bonding" is corrected to "Ultrasonic thermocompression wire bonding". (4) Among the drawings, Figure 2 is corrected as shown in the attached sheet.

Claims (5)

【特許請求の範囲】[Claims] （１）ボンディングアームに取着されたキャピラリ内に
ワイヤを挿通させると共にガスを流入させてワイヤボン
ディングする装置において、上記キャピラリ内へのガス
の流入手段を上記ボンディングアームに設けたことを特
徴とするワイヤボンディング装置。(1) A device for wire bonding by inserting a wire into a capillary attached to a bonding arm and letting gas flow in the device, characterized in that the bonding arm is provided with a means for flowing gas into the capillary. Wire bonding equipment. （２）ガスの流入手段は柱状ボンディングアームに慣通
孔を設けたものである特許請求の範囲第１項記載のワイ
ヤボンディング装置。(2) The wire bonding apparatus according to claim 1, wherein the gas inflow means is a columnar bonding arm provided with a common through hole. （３）ボンディングアームに設けられたガス流入管への
ガス供給接続口はボンディングアームのボンディングの
ための振動の節の位置に設けたものである特許請求の範
囲第２項記載のワイヤボンディング装置。(3) The wire bonding apparatus according to claim 2, wherein the gas supply connection port to the gas inflow pipe provided in the bonding arm is provided at a vibration node position for bonding of the bonding arm. （４）キャピラリへのガス流入口はキャピラリの上端部
である特許請求の範囲第１項乃至第３項いずれか記載の
ワイヤボンディング装置。(4) The wire bonding apparatus according to any one of claims 1 to 3, wherein the gas inlet to the capillary is at the upper end of the capillary. （５）キャピラリへのガス流入口はキャピラリの側壁で
ある特許請求の範囲第１項乃至第３項いずれか記載のワ
イヤボンディング装置。(5) The wire bonding apparatus according to any one of claims 1 to 3, wherein the gas inlet into the capillary is a side wall of the capillary.
JP60037490A 1985-02-28 1985-02-28 Wire bonding device Pending JPS61198737A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60037490A JPS61198737A (en) 1985-02-28 1985-02-28 Wire bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60037490A JPS61198737A (en) 1985-02-28 1985-02-28 Wire bonding device

Publications (1)

Publication Number Publication Date
JPS61198737A true JPS61198737A (en) 1986-09-03

Family

ID=12498959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60037490A Pending JPS61198737A (en) 1985-02-28 1985-02-28 Wire bonding device

Country Status (1)

Country Link
JP (1) JPS61198737A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03273651A (en) * 1990-03-23 1991-12-04 Nippon Steel Corp Joining method of resin-coated bonding small-gage wire with semiconductor device
JP2009147185A (en) * 2007-12-17 2009-07-02 Fujitsu Ltd Wire bonding method and wire bonding device
US7766211B2 (en) * 2007-05-04 2010-08-03 Asm Technology Singapore Pte Ltd Temperature control of a bonding stage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03273651A (en) * 1990-03-23 1991-12-04 Nippon Steel Corp Joining method of resin-coated bonding small-gage wire with semiconductor device
US7766211B2 (en) * 2007-05-04 2010-08-03 Asm Technology Singapore Pte Ltd Temperature control of a bonding stage
JP2009147185A (en) * 2007-12-17 2009-07-02 Fujitsu Ltd Wire bonding method and wire bonding device

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