JPS60193352A - Wire bonding device - Google Patents
Wire bonding deviceInfo
- Publication number
- JPS60193352A JPS60193352A JP59049833A JP4983384A JPS60193352A JP S60193352 A JPS60193352 A JP S60193352A JP 59049833 A JP59049833 A JP 59049833A JP 4983384 A JP4983384 A JP 4983384A JP S60193352 A JPS60193352 A JP S60193352A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- discharge
- atmosphere
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はワイヤボンディング装置に関し、主としてネイ
ルヘッドワイヤボンディング装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a wire bonding device, and mainly relates to a nail head wire bonding device.
(従来技術とその問題点)
トランジスタ、ICなどの半尋体素子上の内部電極(ア
ルミニウムパッド)と外部リードとの結線は、主に、金
ワイヤを用いるネイルへ、ドボンディング、あるいはア
ルミニウムワイヤを用いる超音波ウェッジボンディング
により行なわれている。前者は、水素炎(水素トーチ)
あるいは放電(電気トーチ)により、金ワイヤの先端部
を溶融し、ボールを形成(ボールアップ)した後、熱圧
着により結線する方法である。この方法は、汎用性が大
きく、高速ボンディングが可能であるという特長をもつ
ものの、アルミニウムと金の接合のため、接合界面部に
全滅間化合物が成長してパープル・プレーグと呼ばれる
故障が起こることがあり、信頼性が低い。一方、後者は
アルミニウムワイヤを超音波をかけてつぶし、結線する
方法である。この方法は、ネイルヘッドボンディングの
ように熱を加えてやる必要がなく常温で結線でき、また
、アルミニウムーアルミニウムの接合であるために信頼
性が高い。しかし、結線に際しては方向性があるために
高速化が困難であること、さらにアルミニウムワイヤの
引張り強度がそもそも小さいために、ワイヤ断線が多い
等、ワイヤ自体のコストは安いが製造コストが高くつく
という欠点をもっている。したがってネイルヘッドボン
ディングは民生用、超音波ウェッジボンディングは通信
用の半導体装置の製造に用いられている。(Prior art and its problems) Connections between internal electrodes (aluminum pads) and external leads on semicircular elements such as transistors and ICs are mainly made by bonding to nails using gold wires, or by bonding using aluminum wires. This is done using ultrasonic wedge bonding. The former is a hydrogen flame (hydrogen torch)
Alternatively, the tip of the gold wire is melted by electric discharge (electric torch) to form a ball (ball up), and then the wires are connected by thermocompression bonding. Although this method has the advantage of being highly versatile and capable of high-speed bonding, since it joins aluminum and gold, it can cause a failure called purple plaque due to the growth of interstitial compounds at the bonding interface. Yes, and unreliable. On the other hand, the latter method uses ultrasonic waves to crush aluminum wires and connect them. Unlike nail head bonding, this method does not require the application of heat and can be connected at room temperature, and is highly reliable since it is an aluminum-aluminum bond. However, due to the directional nature of the wire connection, it is difficult to increase the speed, and since the tensile strength of aluminum wire is low to begin with, there are many cases of wire breakage.Although the cost of the wire itself is low, the manufacturing cost is high. It has shortcomings. Therefore, nail head bonding is used for consumer products, and ultrasonic wedge bonding is used for manufacturing semiconductor devices for communications.
ネイルヘッドボンディングのボール形成には、水素トー
チや′電気トーチが用いられているが、高速自動ボンデ
ィング装置には、゛電気トーチが用いられている。とい
うのはボンディング速蔵が速くなるに従い、水素トーチ
の水素炎の連動が、ボンディング動作に追随できなくな
るからである。Hydrogen torches and electric torches are used to form balls in nail head bonding, but electric torches are used in high-speed automatic bonding equipment. This is because as the speed of bonding increases, the hydrogen flame of the hydrogen torch cannot keep up with the bonding operation.
電気トーチによるボール形成は、次のように行なわれる
。第1図のように、ワイヤ1の先端部をキャピラリ2か
ら導出し、ワイヤの直下に電気トーチ対極3を持ってき
て、ワイヤと電気トーチ対極との間に高圧を印加し、両
者間に火花放電を生ぜしめ、ワイヤの先端部を溶融し、
自身の表面張力によりてボール4を形成する。ボンディ
ング時は、電気トーチ対極は水平方向に移動し、ボンデ
ィング作業を阻害しない位置にある。通常ワイヤを接地
し、これに対して電気トーチ対極は正電位となっている
。Ball formation using an electric torch is performed as follows. As shown in Figure 1, the tip of the wire 1 is led out from the capillary 2, the electric torch counter electrode 3 is brought directly below the wire, high voltage is applied between the wire and the electric torch counter electrode, and a spark is generated between the two. Creates an electrical discharge and melts the tip of the wire,
A ball 4 is formed by its own surface tension. During bonding, the counter electrode of the electric torch moves horizontally to a position where it does not interfere with the bonding process. The wire is usually grounded, whereas the electric torch counter electrode is at a positive potential.
金は、化学的に安定でかつ空気中で済融しても酸化しな
い、延展性に富むという性質をもち、ネイルヘッドボン
ディングが容易にできるために、ボンディングワイヤと
して多量に消費されている。Gold is chemically stable, does not oxidize even when melted in air, and is highly malleable, making it easy to perform nail head bonding, so gold is consumed in large quantities as bonding wire.
ところが、近年の金価格の高騰がきっかけとなってアル
ミニウムワイヤによるネイルヘッドボンディングの研究
開発が活発になってきた。However, the recent rise in the price of gold has triggered active research and development into nail head bonding using aluminum wire.
アルミニウムは非常に酸化しやすいためにネイルヘッド
ボンディングを採用するためには、ボール形成時に雰囲
気制御をする必我がある。特願昭58−139434に
は、少なくともワイヤや放電火花等の加熱手段等のワイ
ヤボンディング部を外気と隔絶されたケーシング内に内
装すると共に、このケーシング内を不活性ガス雰囲気又
は真空状態に保持したことを特徴とするワイヤボンディ
ング装置が示されている。しかしながら、このような構
造のワイヤボンディング装置は1次のような欠点を有し
ている。そもそもワイヤボンディング装置はボンディン
グアームやホンディングへy h”など精確な動きをす
る駆動部を有するために、これらの動きを阻訂せずに、
気密なシールをすることは非常にむずかしく、結局、ボ
ンディング装置全体を不活性カス流のケーシング内に内
装しなければならず、作業性が非常に悪くなる。また、
仮にボンディング装置の熱のIA与する部分がケーシン
グでさたとしても、作業性は恋いばかりかケーシング内
の味囲気中の敲素娘度を、アルミニウムボールがば化し
ないようなレベルまで下げるには、多量の不活性ガスが
必要である。さらに、ケーシング内を真借にするためt
こは、排気装置等の付帯設倫が昼夜となり現実的でない
−
ポール形成部【凌を局所的に不活性雰囲気化する方法と
して、第2図のようにぼ気トーチ対極3に連動するノズ
ル5を設け、ここから不活性ガスを吹きつけることが考
えられる。しかしなから、このようなボンティング装置
Itでは、不活性ガスの吹きつけにより、周囲の空気が
多少ともまき込まれ、アルミニウムのような非常に酸化
されやVい金属ではボール表面の酸化をまめがれえない
。また、放電の生ずる方向と不活性カス流の方向とが直
交するために、放電が不安定になったり、さらにアルミ
ニウムの場合は、比重が小さいために、ガス流により第
2図の4′のようにボール形状がゆがめられる。このよ
うな状態では信幀性のおけるボンディングを行なうこと
はできない。Aluminum is highly susceptible to oxidation, so in order to use nail head bonding, it is necessary to control the atmosphere during ball formation. Japanese Patent Application No. 58-139434 discloses that at least wire bonding parts such as wires and heating means such as discharge sparks are housed in a casing isolated from the outside air, and the inside of this casing is maintained in an inert gas atmosphere or vacuum state. A wire bonding apparatus is shown. However, the wire bonding device having such a structure has the following drawbacks. In the first place, wire bonding equipment has a drive unit that makes precise movements such as bonding arms and bonding, so it is possible to
It is very difficult to achieve an airtight seal, and the entire bonding apparatus must be housed in an inert gas flow casing, which results in very poor workability. Also,
Even if the part of the bonding equipment that receives the heat from the IA is absorbed by the casing, not only will the workability be affected, but it will also be difficult to reduce the degree of oxidation in the air inside the casing to a level that will prevent the aluminum balls from becoming brittle. , a large amount of inert gas is required. Furthermore, in order to make the inside of the casing
This is impractical because the installation of ancillary equipment such as an exhaust system is day and night.As a method of locally creating an inert atmosphere at the pole forming part, a nozzle 5 linked to the opposite pole 3 of the blow torch as shown in Fig. 2 is used. It is conceivable to set up a tank and blow inert gas from there. However, in this type of bonding equipment, some amount of surrounding air is drawn in by blowing inert gas, and with metals that easily oxidize such as aluminum, it is difficult to oxidize the ball surface. I can't escape. In addition, since the direction in which the discharge occurs and the direction of the inert gas flow are perpendicular to each other, the discharge becomes unstable.Furthermore, in the case of aluminum, since the specific gravity is small, the gas flow may cause the discharge to become unstable. The shape of the ball is distorted. In such a state, reliable bonding cannot be performed.
(発明の目的) ・
本発明の目的は、従来のワイヤボンディング装置の作業
性をぞこなうことf、K <、少−;□1:の不活性ガ
スで、ボール形成部に良好な不活性カス流を作り出し、
アルミニウムなどの[j父化性ワイヤでも、ネイルヘッ
ドボンディングが安定して行なえるようなワイヤボンデ
ィング装置を提供することにある。(Object of the invention) - The object of the present invention is to improve the workability of conventional wire bonding equipment. Creates an active waste flow,
It is an object of the present invention to provide a wire bonding device that can stably perform nail head bonding even with a hardening wire such as aluminum.
(発明の構成)
本発明は、金属細線と放電電極間に放電を生じさせ、該
金属細線の先端部にボールを形成させる電気トーチ対極
を有するワイヤポンディング装置において、2つのガス
流路と該ガス流路に連なり、該放電電極を取り囲み、上
向きにガスを流出せしめる2重の開放孔が設けられた構
造をもつ電気トーチ対極を有することを特徴とするワイ
ヤボンディング装置である。(Structure of the Invention) The present invention provides a wire pounding device having an electric torch counter electrode that generates a discharge between a thin metal wire and a discharge electrode, and forms a ball at the tip of the thin metal wire. This wire bonding apparatus is characterized in that it has an electric torch counter electrode that is connected to a gas flow path, surrounds the discharge electrode, and has a double open hole that allows gas to flow upward.
(構成の詳細な説明)
第3図は、本発明のワイヤボンディング装置のボール形
成時の様子を示す概略図である。ボール形成部1dすな
わち、放電電極6(第3図では斜線を付しである。)と
キャピラリ2の間の空間は、放電成極6を11yり囲む
、二重のUa放孔7および8から吹きだされるそれぞれ
□1c速の異なる不活性ガス流7′および8′により不
活性雰囲気に保たれる。(Detailed Description of Configuration) FIG. 3 is a schematic diagram showing the state of the wire bonding apparatus of the present invention when forming a ball. The ball forming portion 1d, that is, the space between the discharge electrode 6 (shaded in FIG. 3) and the capillary 2 is formed from the double Ua discharge holes 7 and 8 surrounding the discharge polarization 6 by 11y. An inert atmosphere is maintained by different inert gas flows 7' and 8' blown out at different speeds of □1c.
二重の雰囲気カス流により空気の巻き込みを防止でき、
ボール形成部には良好な雰囲気が実現できる。二重の雰
囲気は、゛電気トーチ対極3内の不活性ガス流路7“お
よび8“より供給される。この不活性ガス流は、放電電
極からキャピラリに向かう方向で、放電により生じた荷
電粒子の運動方向と−aするために放電が安定化され、
ボンディングが滞りなく行なうことができる。Double atmosphere waste flow prevents air entrainment.
A good atmosphere can be created in the ball forming section. The dual atmospheres are supplied by "inert gas channels 7" and 8" in the electric torch counter electrode 3. This inert gas flow is in the direction from the discharge electrode to the capillary, and the direction of movement of the charged particles generated by the discharge is -a, so that the discharge is stabilized.
Bonding can be performed smoothly.
(実施例1)
線径30μffZのアルミニウムワイヤを本発明による
ワイヤボンディング装置によりボンディングした。用い
た不活性ガスはアルゴンである。アルゴンの流速を変え
ながらアルミニウムボールの状態を調べたところ第1表
のような結果を得た。これから、内側のアルゴンガス流
を小さくし、外側のそれを内側の数倍から10倍程度に
すれば、酸化被膜のない、表面の滑らかな球状ボールが
できる。(Example 1) Aluminum wires having a wire diameter of 30 μffZ were bonded using a wire bonding apparatus according to the present invention. The inert gas used was argon. The condition of the aluminum ball was investigated while changing the flow rate of argon, and the results shown in Table 1 were obtained. Now, by reducing the argon gas flow on the inside and making the flow on the outside several to ten times that of the inside, a spherical ball with a smooth surface and no oxide film can be created.
なお、酸化被膜の有無は、アルミニウムボールの金属光
沢の有無により判断した。The presence or absence of an oxide film was determined by the presence or absence of metallic luster on the aluminum balls.
第1表
次に、表面が滑らかで酸化被膜のない球状ボールのでき
る条件、すなわち、内側のアルゴンガス流を277V−
1外側のそれを10?i/−にし、ボンディングを行な
い、ボンディング直後、温湿高湿保管(85℃−85チ
相対湿度−100時間)試験後、および高温保管(17
5℃−100時間)試験後、プルテストを行ない接合部
の強度測定を行なった。ここでプルテストとは、第4図
にあるようにワイヤループに釣針状の治具9をひっかけ
、これを引張り、切れた時の強度を測定する方法である
。なお、高温商況保管試験、高温保管試験はモールドせ
ずICがむきだしの状態で行なった。第2表に精米を示
す。プルテストにより切れた位置はすべて、第4図の1
0の位置で、プルテストの平均強度は、はぼアルミニウ
ムワイヤの引張り強IML 6.(l gとほぼ等しく
、信頼性のある接合が実現されているこ第2表
(実施例2)
純アルミニウムワイヤは、そもそも引張り強度が小さい
ためボンデインダスピードを大きくすると、ボンディン
グ中にワイヤが切断してしまう。Table 1 Next, the conditions for forming a spherical ball with a smooth surface and no oxide film, namely, the inner argon gas flow at 277V-
1 The outside one is 10? Immediately after bonding, after testing at high temperature and high humidity (85°C - 85° relative humidity - 100 hours), and after testing at high temperature (17
After the test (5°C for 100 hours), a pull test was conducted to measure the strength of the joint. Here, the pull test is a method of hooking a fishhook-shaped jig 9 onto a wire loop, pulling it, and measuring the strength when it breaks, as shown in FIG. Note that the high-temperature commercial storage test and the high-temperature storage test were conducted with the IC exposed without being molded. Table 2 shows the polished rice. All the locations where the pull test broke are as shown in Figure 4, 1.
At position 0, the average strength of the pull test is the tensile strength IML of the aluminum wire.6. (Table 2 (Example 2) Pure aluminum wire has a low tensile strength to begin with, so if the bonding speed is increased, the wire will break during bonding. Resulting in.
そこで線径30μmの1原子チのシリコンを添加したア
ルミニウムワイヤを用いてボンディングを行なった。こ
のワイヤの引張り強度は16.3 gであった。Therefore, bonding was performed using an aluminum wire doped with 1 atomic silicon and having a wire diameter of 30 μm. The tensile strength of this wire was 16.3 g.
実施例1と同様に、内側のアルゴンガス流を2 m/s
ec、外側のそれを10frL/!lec にし、ボン
ディングを行なったところ、一つの結線を0.3秒で行
なうことができた。そしてボンディング直後、高温高湿
保管(85℃−85チ相対湿度−100時間)試験後、
および高温保管(175℃−100時間)試験後、プル
テストを行ない接合部の接合強度測定を行ない第3表の
結果を得た。プルテストにより切れた位置はすべて第4
図のIOのfittで、プルテストの平均強度はワイヤ
の引張り強度にほぼ等しく信頼性のある接合が実現され
ていることがわかる。As in Example 1, the inner argon gas flow was set at 2 m/s.
ec, the outer one is 10frL/! lec and bonding was performed, one connection could be made in 0.3 seconds. Immediately after bonding, after high temperature and high humidity storage (85℃ - 85℃ relative humidity - 100 hours) test,
After a high temperature storage test (175° C. for 100 hours), a pull test was conducted to measure the bonding strength of the bonded portion, and the results shown in Table 3 were obtained. All locations where the pull test broke are at the 4th position.
In the IO fitt shown in the figure, it can be seen that the average strength of the pull test is approximately equal to the tensile strength of the wire, and a reliable bond is realized.
第3表
以上の’M 1M例においては、不活性ガスとしてはア
ルゴンを用いているが、ヘリウム等の不活性ガスを用い
てもよい。また、ボンディングワイヤはアルミニラ11
およびアルミニウムーl原子チシリコンについて説明し
たが、他の酸化しや4−い金属ワイヤ例えば、銅、銀で
あってもよい。なおアルミニウム系ワイヤ以外では、不
活性ガスとして窒素ガスを用いることもできる。なぜな
らばアルミニウムとちがって窒素との化合物をつくらな
いからである。In the 'M 1M examples in Table 3 and above, argon is used as the inert gas, but an inert gas such as helium may also be used. Also, the bonding wire is aluminum 11
Although the wires have been described using aluminum and silicon, other oxidizable metal wires such as copper and silver may be used. Note that for wires other than aluminum-based wires, nitrogen gas can also be used as the inert gas. This is because unlike aluminum, it does not form compounds with nitrogen.
(発明の効果)
以上、詳述したように本発明によれば、従来のワイヤボ
ンフイング装置の作業性を全くそこなうことがなく、し
かも少量の不活性ガスで、ボール形成部に艮好な雰囲気
を作り出釘ことができるために、アルミニウムのような
酸化しゃすい゛ワイヤでも信顧性のあるネイルボンディ
ングが可能とな4 これにより、手帳体装置の製造コス
トの低減をはかることができ会ものである。(Effects of the Invention) As described in detail above, according to the present invention, the workability of the conventional wire bonding device is not impaired at all, and moreover, a small amount of inert gas is used to form a ball forming part. Because the atmosphere can be created and the nail bonding can be done with confidence, reliable nail bonding is possible even with oxidized wires such as aluminum. It is something.
第1図は従来のボール形成の様子を示す概略図。
第2図は不活性ガス吹きつけによるボール形成の様子を
示す概略図。第3図は本発明の一実施例を示すための概
略図。第4図はプルテストの方法を示す概略図。
l・・・ボンデインク刀イヤ、2・・・ギヤピラ1ノ、
3・・・電気トーチ対極、4・・・球状ボール、4′・
・・ゆ力Sんだボール、5・・・不活性ガス吹きつけノ
ズル、6・・・放電電極、7.8・・・開放孔、7’、
8’・・・不活性ガス流、7“、8“・・・不活性ガス
流路、9・・・釣針状治共、IO・・・プルテストによ
り破断するイ装置。FIG. 1 is a schematic diagram showing the state of conventional ball formation. FIG. 2 is a schematic diagram showing how balls are formed by blowing inert gas. FIG. 3 is a schematic diagram showing one embodiment of the present invention. FIG. 4 is a schematic diagram showing the pull test method. l...bonde ink sword ear, 2...geapira 1no,
3... Electric torch counter electrode, 4... Spherical ball, 4'.
... Yuki Sold ball, 5... Inert gas blowing nozzle, 6... Discharge electrode, 7.8... Open hole, 7',
8'...Inert gas flow, 7", 8"...Inert gas flow path, 9...Fish hook-shaped joint, IO...A device that is broken by a pull test.
Claims (1)
の先端部にボールを形成させる電気トーチ対極を有する
ワイヤボンディング装置において、2つのガス流路と、
該ガス流路に連なり、該放電電極を取り囲み、上向きに
ガスを流出せしめる2重の開放孔が設けられた構造をも
つ電気トーチ対極を有することを特徴とするワイヤボン
ディング装置。A wire bonding apparatus having an electric torch counter electrode that generates a discharge between a thin metal wire and a discharge/polarized electrode to form a ball at the tip of the thin metal wire, two gas flow paths;
A wire bonding device characterized by having an electric torch counter electrode having a structure in which double open holes are connected to the gas flow path, surround the discharge electrode, and allow gas to flow upward.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59049833A JPS60193352A (en) | 1984-03-15 | 1984-03-15 | Wire bonding device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59049833A JPS60193352A (en) | 1984-03-15 | 1984-03-15 | Wire bonding device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60193352A true JPS60193352A (en) | 1985-10-01 |
Family
ID=12842080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59049833A Pending JPS60193352A (en) | 1984-03-15 | 1984-03-15 | Wire bonding device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60193352A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5957371A (en) * | 1996-10-17 | 1999-09-28 | Kabushiki Kaisha Shinkawa | Method and apparatus for forming a ball in wire bonding |
-
1984
- 1984-03-15 JP JP59049833A patent/JPS60193352A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5957371A (en) * | 1996-10-17 | 1999-09-28 | Kabushiki Kaisha Shinkawa | Method and apparatus for forming a ball in wire bonding |
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