JPS61119052A - Nonnoble metal wire-bonding - Google Patents
Nonnoble metal wire-bondingInfo
- Publication number
- JPS61119052A JPS61119052A JP59239487A JP23948784A JPS61119052A JP S61119052 A JPS61119052 A JP S61119052A JP 59239487 A JP59239487 A JP 59239487A JP 23948784 A JP23948784 A JP 23948784A JP S61119052 A JPS61119052 A JP S61119052A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- capillary
- atmosphere
- metal wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
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- H—ELECTRICITY
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85065—Composition of the atmosphere being reducing
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- H01L2224/85053—Bonding environment
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- H01L2224/85075—Composition of the atmosphere being inert
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 この発明は非貴金属ワイヤボンディング方法に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a non-noble metal wire bonding method.
〔発明の技術的背景およびその問題点〕半導体工業の急
速な発展にともない工程の自動化が実行されているが、
そのうちワイヤボンディングはまさにその主流となって
いる。この現在実用されているワイヤボンディング装置
は金線を用いたものが主流であるが、大量生産になると
、金線の価格がコストに大きく影響するうそのため全代
替ワイヤの開発が古くから行なわれている。しかし、金
線のような接合性のよい全代替ワイヤ用の高速ワイヤボ
ンダはまだ開発されていないのが現状である。これは、
ボール形成時の雰囲気、ボンディング時の雰囲気が問題
であるとして、これらの雰囲気を還元性ガス或いは不活
性ガス雰囲気にするなどの提案が多数なされている例え
ば特開昭５４−１６０５４０号、特開昭５５−１２３１
９８号、実開昭５５−７４０４４号、特開昭５０−１４
００６２号、特開昭５７−１６９９１８号、特開昭５８
−１９９５６３号、特開昭５７−１３７４７号などに開
示されている通りである。[Technical background of the invention and its problems] With the rapid development of the semiconductor industry, process automation has been carried out.
Of these, wire bonding has become the mainstream. Most of the wire bonding equipment currently in use uses gold wire, but when it comes to mass production, the price of gold wire has a large impact on costs, so the development of all-alternative wires has been carried out for a long time. There is. However, at present, a high-speed wire bonder for all alternative wires with good bonding properties, such as gold wire, has not yet been developed. this is,
Since the atmosphere during ball formation and the atmosphere during bonding are problems, many proposals have been made to change these atmospheres to reducing gas or inert gas atmospheres. 55-1231
No. 98, Utility Model Publication No. 55-74044, Japanese Patent Application Publication No. 50-14
No. 0062, JP-A-57-169918, JP-A-58
-199563, JP-A-57-13747, etc.
しかしながら、上記のような技術を用いて非貴金属ワイ
ヤをボンディングしても安定して接合かたボンディング
の場合、被接合物例えばリードフ加熱状態で加圧し、超
音波ワイヤボンディングする必要があるため、この熱の
上昇気流中即ちとの温度雰囲気にＣｕワイヤが晒される
と酸化反応の大きいＣｕワイヤ表面はたちまち酸化され
、これがボール形成性及び接合性を低下させる原因と判
った。However, even if non-precious metal wires are bonded using the above-mentioned technology, it is not possible to bond them stably.In the case of bonding, it is necessary to perform ultrasonic wire bonding by applying pressure while the bonded object, for example, a lead, is heated. It has been found that when the Cu wire is exposed to an atmosphere of rising heat, the surface of the Cu wire, which undergoes a large oxidation reaction, is immediately oxidized, and this is the cause of the deterioration of ball formation and bondability.
上記ヒータによる高熱の影響はキャピラリ内やさらにク
ランパ側でも反応する場合がある。従って酸化したワイ
ヤがキャピラリー先端に導びされ。The effects of the high heat generated by the heater may react within the capillary and even on the clamper side. Therefore, the oxidized wire is guided to the capillary tip.
ここで電気トーチによシ放電させても酸化したワイヤの
場合には不活性又は還元性ガス雰囲気中で放電時ワイヤ
先端が溶融しにくく、ボール形成性が著しく低下しボン
ディング不良となることが判った。さらに２ｎｄボンデ
ィングでウェッジボンディングを実行しても、ワイヤ表
面が酸化していると、被接合面例えばリードフームの銀
メツキ面との接合強度が小さいという問題があった。It has been found that even if the wire is oxidized even when discharged with an electric torch, the tip of the wire is difficult to melt during discharge in an inert or reducing gas atmosphere, resulting in a marked decrease in ball forming properties and poor bonding. Ta. Furthermore, even when wedge bonding is performed in the second bonding, if the wire surface is oxidized, there is a problem that the bonding strength with the surface to be bonded, for example, the silver-plated surface of the lead frame is low.
この発明は上記点に鑑みなされたもので、非貴金属ワイ
ヤにより良好な信頼性あるボンディングが得られる非貴
金属ワイヤボンディング方法を提供するものである。The present invention has been made in view of the above points, and provides a non-noble metal wire bonding method that allows good and reliable bonding to be obtained using non-noble metal wires.
すなわち、スプールに巻装された非貴金属ワイヤをボン
ディングツール中に挿過させ、このボンディングツール
を通過したワイヤをボンディングするに際し、上記非貴
金属ワイヤの少なくとも表ある。That is, when a non-noble metal wire wound around a spool is inserted into a bonding tool and the wire that has passed through the bonding tool is bonded, at least the front side of the non-noble metal wire is inserted.
次に本発明方法の実施例を図面を参照して説明する。非
貴金属（卑金Ｓ＞ワイヤ例えばＣｕ、ｋｌ。Next, embodiments of the method of the present invention will be described with reference to the drawings. Non-precious metals (base gold S>wire e.g. Cu, kl.
およびこれらの合金などのうちＣｕワイヤを用いたワイ
ヤボンディングについて説明する。And wire bonding using Cu wire among these alloys will be explained.
Ｃｕワイヤ（１）の走行路のボンディングツール例えば
キャビ９１月２）内にワイヤ（１）が滞在している時に
Ｃｕワイヤ（１）の少なくとも表面を還元したＣｕワイ
ヤ（１）の先端に金属球（３）を作り、この金属球（３
）をボンディング部例えばＩＣのポンディングパッド（
４）にボールボンディングする場合の実施例を説明する
。A bonding tool for the running path of the Cu wire (1), for example, when the wire (1) is staying in the cavity 91 (2), at least the surface of the Cu wire (1) is reduced, and a metal ball is attached to the tip of the Cu wire (1). (3) and make this metal ball (3
) to the bonding part, such as the bonding pad of an IC (
4) An example of ball bonding will be described.
すなわち、スプール（図示せず）Ｋ巻装されたＣｕワイ
ヤ（１）はクランパ（５）を介してキャピラリ（２）
Ｋ挿通される。このキャビ９１月２）には、このキャピ
ラリ（２）内にＣｕワイヤ（１）が滞在している期間中
又は所定期間、 Ｃｕワイヤ（１）の少なくとも表面を
還元するように構成されている。例えばキャピラリ（２
）のＣｕワイヤ（１）の入口側には、還元ガス例えば高
温に加熱された水素混合ガスをキャピラリ（１）内に導
入するためのノズル（６）が結合され、このノズル゛（
６）の側壁には上記還元ガスを予め定めた流量キャピラ
リ（１）に導入する如く入口管（力が結合されている。That is, the Cu wire (1) wrapped around a spool (not shown) is passed through the clamper (5) to the capillary (2).
K is inserted. The capillary (2) is configured to reduce at least the surface of the Cu wire (1) during the stay of the Cu wire (1) in the capillary (2) or for a predetermined period of time. For example, capillary (2
) A nozzle (6) for introducing a reducing gas, such as a hydrogen mixed gas heated to a high temperature, into the capillary (1) is connected to the inlet side of the Cu wire (1), and this nozzle (
An inlet pipe (force) is connected to the side wall of the capillary (6) to introduce the reducing gas into the capillary (1) at a predetermined flow rate.
即ち、この入口管（７）から供給した還元ガスがノズル
（６）を介してキャピラリ（２）に導入し、キャピラリ
（２）の先端から適宜導出される如く構成されている。That is, the reducing gas supplied from the inlet pipe (7) is introduced into the capillary (2) via the nozzle (6), and is appropriately led out from the tip of the capillary (2).
この導出されるガスは勢いよく下方に流出されると、そ
のガスが金属球（３）を形成する後述するシールド雰囲
気（１３をこわす。従ってキャピラリ（２）の先端から
ガスが殆んど流出しない程度の充満状態雰囲気となるよ
うに入口管（２）からの流量を抑える必要がある。When this extracted gas flows downward forcefully, it destroys the shield atmosphere (13, which will be described later) that forms the metal sphere (3).Therefore, almost no gas flows out from the tip of the capillary (2). It is necessary to suppress the flow rate from the inlet pipe (2) so that the atmosphere is moderately full.
上記水素混合ガスは例えば水素濃度１０％を含むアルゴ
ン（Ａ「）混合ガスを温度例えば３００℃に加熱したガ
スを用いる。この高温ガスはキャピラリ（２）内で形成
されればよく、例えば人口管（７）から常温のガスを供
給し、キャピラリ（２）を加熱して、このキャピラリ（
２）の温度によりキャピラリ（２）内の還元性ガスを高
温にする方法でもよい。キャビ、ラリ（１）に供給する
還元性ガスはキャピラリ（１）の先端から流出してボー
ル形成部およびボンディング部に空気が流入しないよう
に還元性ガスの流量やキャピラリ（２）の先端構造を構
成するとよい。さらにワイヤボンディング時、キャピラ
リ（２）内をＣｕワイヤ（１）が出たシ入ったりするが
、そのＣｕワイヤの進退運動により、キャピラリ（２）
先端の細い穴から空気が入り込まないように還元ガスを
供給する。キャピラリ（２）の先端から突出したＣｕワ
イヤ（１）の先端近傍に金属球（３）を形成するための
電気トーチのトーチ棒（８）が設置され、このトーチ棒
（８）は周知のように金属球（３）をＣｕワイヤ（１）
の先端に形成する時、Ｃｕワイヤ（１）の先端近傍に位
置するように予め記憶されたプログラムで操作される◇
この金属球（３）を形成する雰囲気特にキャピラリ下端
からＣｕワイヤｒ１）先端までの雰囲気を不活性ガス、
還元性ガス、の少なくとも一方の雰囲気にするようにノ
ズル（９）が設けられる。この雰囲気は、完全にシール
ドガスで大気と速断されるが、空気を巻き込むと球形の
金属球（３）ができにくくなり、表面が酸化され、接合
性が著るしく低下する。シールドガスは勢いよく流出す
るとスパークさせても金属球（３）が形成できなくなる
ため最適（流量）範囲がある。さらにボーｅ−５−＆
”Ｏ乃至３５０℃程度に保持する如くヒータステージα
１上にリードフレームαυに固定されたＩＣ（１３が設
けられる）即ち、Ｃｕワイヤ（１）はキャピラリ（２）
内で少なくとも表面が還元されて、活性な表面を有する
Ｃｕワイヤがキャピラリ（１）の先端を突出し、この位
置でトーチ棒（８）がＣｕワイヤ（１）先端に誘導され
、高圧パルスが印加され、トーチ棒（８）とＣｕワイヤ
（りの先端との間で放電し、金属球（３）が形成される
。この雰囲気は上記したようにノズル（９）からの不活
性ガスの雰囲気に保持され、良好な金属球（３）が形成
され、この状態でポンディングパッド（４）上に金属球
（３）がボンディングされる。この金属球（３）は表面
が酸化されてないので良好なボンディングが安定して得
られる。この金属球（３）のボンディング後リードフレ
ームαυの予め定められたボンディング位置に２ｎｄボ
ンディングを実行する。この場合もキャピラリ部２）で
還元されて活性化されたＣｕワイヤ（１）を用いて不活
性ガス雰囲気中でウェッジボンディングするため、この
ボンディングも良好なボンディングが安定して得られる
っ
上記実施例では非貴金属ワイヤの還元をボンディングツ
ールで行った例について説明したが、ワイヤ走行路であ
れば、クランパを含む位置にも還元雰囲気を形成しても
同様な効果が得られる。又ワイヤ先端にボールを形成し
ない非貴金属ワイヤのウェッジボンディングについても
良好な効果が得られる。The above-mentioned hydrogen mixed gas is, for example, a gas obtained by heating an argon (A') mixed gas containing 10% hydrogen concentration to a temperature of, for example, 300°C.This high-temperature gas may be formed within the capillary (2), for example, an artificial pipe. Gas at room temperature is supplied from (7) to heat the capillary (2), and this capillary (
Alternatively, the reducing gas in the capillary (2) may be heated to a high temperature using the temperature in 2). The reducing gas supplied to the cavity and rally (1) flows out from the tip of the capillary (1), and the flow rate of the reducing gas and the tip structure of the capillary (2) are controlled so that air does not flow into the ball forming area and bonding area. It is recommended to configure Furthermore, during wire bonding, the Cu wire (1) comes out and enters the capillary (2), but due to the movement of the Cu wire back and forth, the capillary (2)
Supply reducing gas through the thin hole at the tip to prevent air from entering. A torch rod (8) of an electric torch for forming a metal sphere (3) is installed near the tip of the Cu wire (1) protruding from the tip of the capillary (2), and this torch rod (8) is Place the metal ball (3) on the Cu wire (1)
When forming it at the tip of the Cu wire (1), it is operated according to a pre-stored program so that it is located near the tip of the Cu wire (1).
The atmosphere forming this metal sphere (3), especially the atmosphere from the bottom end of the capillary to the tip of the Cu wire r1), is an inert gas.
A nozzle (9) is provided to create an atmosphere of at least one of reducing gas. This atmosphere is completely separated from the atmosphere by the shielding gas, but if air is involved, it becomes difficult to form a spherical metal ball (3), the surface is oxidized, and the bondability is significantly reduced. If the shielding gas flows out forcefully, it will not be possible to form a metal ball (3) even if it is sparked, so there is an optimum (flow rate) range. Furthermore, bow e-5-&
Heater stage α to maintain temperature from 0 to 350℃
IC (13 is provided) fixed to the lead frame αυ on 1, that is, the Cu wire (1) is connected to the capillary (2)
At least the surface of the Cu wire is reduced within the capillary and the Cu wire with an active surface protrudes from the tip of the capillary (1), at which point the torch rod (8) is guided to the tip of the Cu wire (1) and a high pressure pulse is applied. , a discharge occurs between the torch rod (8) and the tip of the Cu wire, forming a metal sphere (3). This atmosphere is maintained as an inert gas atmosphere from the nozzle (9) as described above. A good metal ball (3) is formed, and in this state, the metal ball (3) is bonded onto the bonding pad (4).The surface of this metal ball (3) is not oxidized, so it is in good condition. Stable bonding can be obtained.After bonding of this metal ball (3), 2nd bonding is performed at a predetermined bonding position of the lead frame αυ.In this case, Cu is reduced and activated in the capillary part 2). Since wedge bonding is performed using the wire (1) in an inert gas atmosphere, good bonding can be stably obtained in this bonding. However, in the case of a wire running path, the same effect can be obtained even if a reducing atmosphere is formed at a position including the clamper. Good effects can also be obtained in wedge bonding of non-noble metal wires without forming a ball at the tip of the wire.
さらに、上記実施例ではＣｕワイヤについて説明ヤボン
ディンｙ’ｒｙｎシてもよい。Furthermore, in the above embodiments, the Cu wire may be explained.
以上説明したように本発明方法によれば非貴金属ワイヤ
の少なくとも表面を還元した後金属球を形成するボンデ
ィング方法を得ることができるので、良好な金属球を形
成することができると共に還元されたワイヤ表面をボン
ディングするので。As explained above, according to the method of the present invention, it is possible to obtain a bonding method in which a metal sphere is formed after reducing at least the surface of a non-precious metal wire, so that a good metal sphere can be formed and the reduced wire Because the surface is bonded.
安定して強固なポールボンディングウェッジボンディン
グを得ることができる。Stable and strong pole bonding and wedge bonding can be obtained.
第１図は本発明方法の実施例を説明するための図、ｔＸ
ｚ図は第１図のキャピラリ部を拡大して示めす説明図で
ある。
１、・・・非貴金属ワイヤ、 ２・・・キャピラリ、
３・・・金属球、６ 、９・・・ノズル、７・・・入口
管、 ８・・・トーチ棒。
代理人 弁理士 則 近 憲 佑
（ほか１名）
第１１１Ｉ
＠２１１FIG. 1 is a diagram for explaining an embodiment of the method of the present invention, tX
FIG. z is an explanatory diagram showing an enlarged view of the capillary section in FIG. 1. 1. Non-precious metal wire, 2. Capillary,
3... Metal ball, 6, 9... Nozzle, 7... Inlet pipe, 8... Torch rod. Agent Patent Attorney Noriyuki Chika (and 1 other person) No. 111I @211
Claims (3)
ングツール中に挿通させ、このボンディングツールを通
過したワイヤを被ボンディング位置にボンディングする
に際し、上記非貴金属ワイヤの少なくとも表面を還元さ
せた後ボンディングすることを特徴とする非貴金属ワイ
ヤボンディング方法。(1) A non-precious metal wire wound around a spool is inserted into a bonding tool, and when the wire that has passed through the bonding tool is bonded to a bonding target position, at least the surface of the non-precious metal wire is reduced before bonding. A non-precious metal wire bonding method characterized by:
段は非貴金属ワイヤの走行路に高温に加熱された還元性
ガス雰囲気を形成することを特徴とする特許請求の範囲
第１項記載の非貴金属ワイヤボンディング方法。(2) The non-noble metal wire according to claim 1, characterized in that the means for reducing at least the surface of the non-noble metal wire forms a reducing gas atmosphere heated to a high temperature in the running path of the non-noble metal wire. Bonding method.
段は、ボンディングツール内を非貴金属ワイヤが走行中
行うものである特許請求の範囲第１項記載の非貴金属ワ
イヤボンディング方法。(3) The non-noble metal wire bonding method according to claim 1, wherein the means for reducing at least the surface of the non-noble metal wire is carried out while the non-noble metal wire is running within the bonding tool.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59239487A JPS61119052A (en) | 1984-11-15 | 1984-11-15 | Nonnoble metal wire-bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59239487A JPS61119052A (en) | 1984-11-15 | 1984-11-15 | Nonnoble metal wire-bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61119052A true JPS61119052A (en) | 1986-06-06 |
| JPH0530059B2 JPH0530059B2 (en) | 1993-05-07 |
Family
ID=17045506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59239487A Granted JPS61119052A (en) | 1984-11-15 | 1984-11-15 | Nonnoble metal wire-bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61119052A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5152450A (en) * | 1987-01-26 | 1992-10-06 | Hitachi, Ltd. | Wire-bonding method, wire-bonding apparatus,and semiconductor device produced by the wire-bonding method |
-
1984
- 1984-11-15 JP JP59239487A patent/JPS61119052A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5152450A (en) * | 1987-01-26 | 1992-10-06 | Hitachi, Ltd. | Wire-bonding method, wire-bonding apparatus,and semiconductor device produced by the wire-bonding method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0530059B2 (en) | 1993-05-07 |
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