JPH0354837A - Wire bonding - Google Patents

Wire bonding

Info

Publication number
JPH0354837A
JPH0354837A JP1188813A JP18881389A JPH0354837A JP H0354837 A JPH0354837 A JP H0354837A JP 1188813 A JP1188813 A JP 1188813A JP 18881389 A JP18881389 A JP 18881389A JP H0354837 A JPH0354837 A JP H0354837A
Authority
JP
Japan
Prior art keywords
wire
gas
bonding
capillary
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1188813A
Other languages
Japanese (ja)
Inventor
Kohei Tatsumi
宏平 巽
Tomohiro Uno
智裕 宇野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP1188813A priority Critical patent/JPH0354837A/en
Publication of JPH0354837A publication Critical patent/JPH0354837A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/8212—Aligning
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve the bondability of a wire bonding by a method wherein reducing gas for sealing or inert gas is made to flow through the interior and/or the outer peripheral part of a capillary along a metal wire and the wire is sealed. CONSTITUTION:A copper wire is used as a bonding wire 1 and reducing gas of Ar+10% H2 is used as sealing gas. The above gas is introduced in the interior of a capillary 3 and the sealing gas is made to inject through the point part of the capillary along the wire. Moreover, a conduit made of a Teflon is wound on the periphery of the capillary 3, the sealing gas is made to pass through the gap between the capillary and the conduit, the gas is made to inject through the point part of the capillary along the wire. In an atmosphere 5 containing this gas, a high voltage is applied to the wire and a discharge electrode and an arc is formed, whereby heat is imparted to the point of the wire and a ball part 2 is formed. After the formation of the ball part 2, the ball part 2 is thermally fixed by pressure to an Al electrode on a semiconductor chip using a capillary chip 3.

Description

【発明の詳細な説明】 （産業上の利用分野） この発明は半導体装置の製造工程に適用されるワイヤー
ボンディング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a wire bonding method applied to the manufacturing process of semiconductor devices.

（従来の技術） 現在一般的に半導体チップの電極とリードフレームとの
接合には、金ワイヤーを用いたワイヤーボンディング方
法が実用化されている。(Prior Art) Currently, wire bonding methods using gold wires are generally put into practical use for bonding electrodes of semiconductor chips and lead frames.

第３図は、この従来の一般的なワイヤーボンディング方
法を図示したものである。FIG. 3 illustrates this conventional general wire bonding method.

従来のワイヤーボンディング方法では、ボンディングツ
ールであるキャピラリー３に保持されている金ワイヤー
６の先端をアーク人熱で溶融させ、これを凝固させてボ
ール部１０を形或し、このボール部１０を半導体チップ
７上に形成されたアルミ電極８にボールボンディングし
た後（第３図（ａ），（ｂ））、金ワイヤーの他端側を
銀メッキ等の表面処理が施された銅合金、鉄・ニッケル
合金等のりード９にステッチボンディングする（第３図
（ｅ），（ｄ））。In the conventional wire bonding method, the tip of a gold wire 6 held in a capillary 3, which is a bonding tool, is melted by arc heat, solidified to form a ball part 10, and this ball part 10 is used to bond a semiconductor. After ball bonding to the aluminum electrode 8 formed on the chip 7 (Fig. 3 (a), (b)), the other end of the gold wire is coated with a copper alloy, iron, etc. surface-treated with silver plating, etc. Stitch bonding is performed to glue 9 such as nickel alloy (Fig. 3 (e), (d)).

これまでの方法では金ワイヤー６の接合には主として超
音波併用熱圧着方式が用いられている。In conventional methods, a thermocompression bonding method combined with ultrasonic waves has been mainly used to bond the gold wires 6.

ところが、この種の金ワイヤーを用いた場合、材料原価
が高くなることと、半導体チップ７上のアルミ電極８と
の接合部の長期信頼性が低いという問題があるため、金
に代わる材料とそのボンディング技術の開発が要望され
てきた。However, when using this type of gold wire, there are problems such as high material costs and low long-term reliability of the joint with the aluminum electrode 8 on the semiconductor chip 7. There has been a demand for the development of bonding technology.

このため、材料原価低減及び素子の長期信頼性向上のた
めに金属ワイヤーを金から銅に代えると共に、銅合金リ
ード表面の銀メッキ層を省略してリード上に直接銅ワイ
ヤーを接合しようとする場合には以下のようなことが問
題となる。金属ワイヤーを電極にボンディングする場合
、良好な接合状態を得るためには金属ワイヤーの硬さと
電極の硬さが近似していることが望ましい。従来の金ワ
イヤーの場合、ボンディング作業が大気中で行なわれる
のが一般的であるが、ボール部の硬さはビッカース硬さ
でＨ　ｖ３０〜４０程度であり、接合するアルミ電極の
硬さとほぼ同等で、ボンディング性は良好であった。一
方、銅ワイヤーの場合、大気中では金に比べ銅ボールの
表面が酸化され、接合性の良好なボールを形成できず、
また銅ボールは金よりも硬いためにたとえば９９．９９
９９（％）　Ｃｕの銅を用いてもボール部の硬さはビッ
カース硬さでＨｖ８０〜１００程度にあり、アルミ電極
あるいは半導体シリコンチップを破壊するおそれがある
。For this reason, in order to reduce material costs and improve long-term reliability of the device, the metal wire is replaced with copper from gold, and the silver plating layer on the surface of the copper alloy lead is omitted and the copper wire is bonded directly onto the lead. The following problems arise. When bonding a metal wire to an electrode, it is desirable that the hardness of the metal wire and the hardness of the electrode be similar in order to obtain a good bonding state. In the case of conventional gold wire, the bonding work is generally performed in the atmosphere, but the hardness of the ball part is about Hv30 to 40 on Vickers hardness, which is almost the same as the hardness of the aluminum electrode to be bonded. The bonding properties were good. On the other hand, in the case of copper wire, the surface of the copper ball is oxidized compared to gold in the atmosphere, making it impossible to form a ball with good bonding properties.
Also, copper balls are harder than gold, so for example 99.99
Even if copper of 99(%) Cu is used, the hardness of the ball portion is about 80 to 100 Hv in terms of Vickers hardness, and there is a risk of breaking the aluminum electrode or the semiconductor silicon chip.

また、上述のように銀メッキ層を省略し、リードに直接
ボンディングを行なうようにすると、ボンディング時に
酸化のため接合不良即ち接合強度不足となる問題がある
。そこでこの場合には、非酸化性雰囲気中にてボンディ
ング作業を行なうことが検討され、たとえば特開昭６２
　−　１３８８３６号公報では第４図に示されるように
壁（シールド力バー）ｌ２によってボンディング作業場
全体を広くおおう方法、特開昭８１　−　２９６７３１
号公報では第５図に示されるように吹き抜け筒体ｌ３の
内部の雰囲気を制御する方法、及び特開昭６１　−　１
７２３４３号公報では第６図に示されるように不活性ガ
スノズル１６と還元性高温ガスノズル１４とで雰囲気を
制御する方法などが提案とれている。しかしながら、前
述の第１，第２の方法では、広範囲の雰囲気形成のため
酸素分圧低減が不十分な上周囲部の壁構築により作業性
が極めて悪くなること、また第３の場合には、テッチボ
ンディングのサイクルの速さに雰囲気の形成が間に合わ
ず、横からの雰囲気ガスの吹付けでは酸素分圧の低減が
十分ではないという理由により銅ワイヤー等の酸化され
やすい金属ワイヤーの使用は一般的ではなかった。Further, if the silver plating layer is omitted as described above and bonding is performed directly to the leads, there is a problem that oxidation occurs during bonding, resulting in poor bonding, that is, insufficient bonding strength. Therefore, in this case, it has been considered to perform the bonding work in a non-oxidizing atmosphere.
- Publication No. 138836 discloses a method of widely covering the entire bonding work area with a wall (shield force bar) l2 as shown in FIG. 4, JP-A-81-296731
The publication describes a method of controlling the atmosphere inside the open-air cylinder l3 as shown in FIG. 5, and JP-A-61-1.
Publication No. 72343 proposes a method of controlling the atmosphere using an inert gas nozzle 16 and a reducing high temperature gas nozzle 14, as shown in FIG. However, in the first and second methods described above, the workability becomes extremely poor due to the construction of a wall in the upper peripheral area where the oxygen partial pressure is insufficiently reduced due to the wide range of atmosphere formation, and in the third case, It is common to use metal wires that are easily oxidized, such as copper wire, because the atmosphere cannot be formed in time for the speed of the tech bonding cycle, and blowing atmospheric gas from the side is not sufficient to reduce the oxygen partial pressure. It wasn't.

（発明が解決しようとする課題） 本発明の目的は、以上のような問題点に鑑み、酸化され
やすい金属のワイヤーを使った場合に電極及び半導体チ
ップが破壊を受けることなく金属ワイヤーと電極とを良
好に接合でき、しかも金属ワイヤーとリードとを良好に
接合できる作業性の良いワイヤーボンディング方法を提
供することである。(Problems to be Solved by the Invention) In view of the above-mentioned problems, an object of the present invention is to provide a method for connecting metal wires and electrodes without damaging the electrodes and semiconductor chips when metal wires that are easily oxidized are used. To provide a wire bonding method with good workability, which can bond metal wires and leads well, and also bond metal wires and leads.

（課題を解決するための手段） 本発明は、半導体チップ上の電極とリードとを金属ワイ
ヤーを用いて結線するワイヤーボンディング方法におい
て、キャピラリー内部か、キャビラリー外周部かの何れ
かより又は両方よりシール用還元性ガス又は不活性ガス
を金属ワイヤーに沿って流し、キャピラリ一先端部から
ボンディング部にかけてシールしながらワイヤーボンデ
ィングを行なうようにしたものである。(Means for Solving the Problems) The present invention provides a wire bonding method for connecting electrodes and leads on a semiconductor chip using metal wires, from either the inside of the capillary, the outer periphery of the cavity, or both. A reducing gas or an inert gas for sealing is flowed along the metal wire, and wire bonding is performed while sealing from the tip of the capillary to the bonding part.

金属ワイヤーとアルミ電極もしくはリードとの間に良好
な接合状態を形成するためには、材料表面の酸化皮膜等
を十分除去し、更に接合界面における材料の塑性変形に
より酸化膜破壊後の新生面同志の接触面積を拡大するこ
とが重要である。In order to form a good bond between the metal wire and the aluminum electrode or lead, it is necessary to sufficiently remove the oxide film on the surface of the material, and also to prevent the new surface from forming after the oxide film is destroyed by plastic deformation of the material at the bonding interface. It is important to expand the contact area.

また、銀メッキ層を省略し、リードに直接ボンディング
を行なう場合も酸化膜の除去及び接合界面での塑性変形
の双方が重要となる。Furthermore, when the silver plating layer is omitted and bonding is performed directly to the lead, both removal of the oxide film and plastic deformation at the bonding interface are important.

そこで本発明では、キャビラリーの内部もしくはキャビ
ラリー外周部に設けたシール用ガスの吹出し口から、Ａ
ｒ，Ｎｚ，Ｈｅ等の不活性ガスもしくはそれらにＨ２，
Ｃｏ等を混合した還元性ガスを下方ボール形成部に向け
て流しボール作成時のボール近傍の雰囲気を低酸素濃度
に保つようにした。なお、シール用ガスはキャピラリー
の内部からに加えて、キャビラリー外周部からの吹出し
を併用して雰囲気形成を行なってもよい。Therefore, in the present invention, A
Inert gas such as r, Nz, He or H2,
A reducing gas mixed with Co or the like was flowed toward the lower ball forming section to maintain the atmosphere near the ball at a low oxygen concentration during ball formation. In addition to the sealing gas being blown from the inside of the capillary, the atmosphere may also be blown out from the outer periphery of the capillary.

第２図は、本発明の方法を実施するための装置例であり
、何れも断面図を示し、図中の１はボンディングワイヤ
ー、２はボンディングワイヤー先端部のボール部、３は
キャビラリー、４はシール用ガスの導管、５はシール用
ガスによって形成されたシール雰囲気である。FIG. 2 shows an example of an apparatus for carrying out the method of the present invention, all of which are cross-sectional views. In the figure, 1 is a bonding wire, 2 is a ball portion at the tip of the bonding wire, 3 is a cavity, and 4 is a cross-sectional view. 5 is a sealing gas conduit, and 5 is a sealing atmosphere formed by the sealing gas.

第２図（ｂ）は、キャピラリ−３の内部にシール用ガス
を導き、キャビラリーの先端部より前記のガスをボンデ
ィングワイヤーに沿って吹き出し、シール雰囲気を形成
する方法、（Ｃ）はキャビラリーの外側にシール用ガス
の導管を設けて、キャビラリーの外周部からボンディン
グワイヤーに沿ってシール用ガスを吹き出す方法であり
、（ａ）は（ｂ）と（Ｃ）とを組み合せた方法である。FIG. 2(b) shows a method in which a sealing gas is introduced into the inside of the capillary 3, and the gas is blown out from the tip of the capillary along the bonding wire to form a sealing atmosphere. This is a method in which a sealing gas conduit is provided outside the cavity and the sealing gas is blown out along the bonding wire from the outer periphery of the cavity, and (a) is a combination of (b) and (C). .

シール用ガスの流量としては、ボンディングワイヤーの
ボール形成時の酸化防止効果のために０．ＩＮ　／分以
上とすることが望ましい。より好ましくは０．２ｇ／分
以上であり、第２図に示した方法により、酸化はほぼ完
全に防止できる。The flow rate of the sealing gas is set at 0.00 to prevent oxidation during bonding wire ball formation. It is desirable to set it to IN/min or more. More preferably, it is 0.2 g/min or more, and oxidation can be almost completely prevented by the method shown in FIG.

即ち、本発明では従来の横方向からの雰囲気ガスの吹付
け法と異なり、ボール形戊部分にもっとも近いところに
ガス吹き口を設けており、かつ、ボール部の全表面にわ
たって均一にガス雰囲気を形成できることにより、ボー
ル部の酸化防止効果を高めている。That is, in the present invention, unlike the conventional method of blowing atmospheric gas from the side, the gas blowing port is provided closest to the ball-shaped hole, and the gas atmosphere is uniformly distributed over the entire surface of the ball. By being able to form the ball, the anti-oxidation effect of the ball portion is enhanced.

本発明者らが、種々実験を重ねた結果以下のことが明ら
かとなった。即ち、第１図（ａ）はシール方法により銅
ワイヤーボール部の酸素濃度（酸化の程度）がどの程度
違ってくるかを示すもので、第２図（ｂ）のようにキャ
ピラリーの先端部からシール用ガスを吹き出す本発明法
Ａでは酸化をほぼ完全に防止できている。また、第１図
（ｂ）は従来のビッカース硬度測定法に代えて新しく開
発したボール部強度測定法により銅ワイヤーボール強度
を評価したものである。ボール硬さは金線の場合にはボ
ール部断面を鏡面研磨して、ビッカース硬度を測定する
のが一般的であるが、銅ワイヤー等の酸化物を形成する
ものについては、ボール部の表面に形成される酸化物層
による硬化を十分に評価できない。また接合する際にボ
ール部は変形し、加工硬化するので、実際には一定荷重
下での変形量がより重要となる。そこで、ここでは第１
図（Ｃ）に示すようにボール付ワイヤー１を試料台の上
に水平に置き、試料台１７面と平行な面を有する平面圧
子１８によりホール部を一定速度で圧縮変形させた。そ
の結果ある変形量を与えるために必要な荷重（圧縮強度
）は本発明法Ａによれば横方向からの雰囲気ガスの吹付
け法Ｂや大気中の場合Ｃに比べて大きく低減され、金ワ
イヤーボールの値と同程度のボール硬さとなることが判
る。As a result of various experiments conducted by the present inventors, the following has become clear. In other words, Figure 1 (a) shows how much the oxygen concentration (degree of oxidation) in the copper wire ball part changes depending on the sealing method. Method A of the present invention, in which sealing gas is blown out, can almost completely prevent oxidation. Furthermore, FIG. 1(b) shows the evaluation of the copper wire ball strength using a newly developed ball part strength measuring method instead of the conventional Vickers hardness measuring method. In the case of gold wire, it is common to measure the Vickers hardness by mirror-polishing the cross section of the ball, but for materials that form oxides, such as copper wire, the surface of the ball is Curing due to the formed oxide layer cannot be fully evaluated. Furthermore, since the ball portion is deformed and work-hardened during joining, the amount of deformation under a constant load is actually more important. Therefore, here, the first
As shown in Figure (C), the ball-equipped wire 1 was placed horizontally on a sample stage, and the hole portion was compressed and deformed at a constant speed using a flat indenter 18 having a surface parallel to the surface of the sample stage 17. As a result, according to method A of the present invention, the load (compressive strength) required to give a certain amount of deformation is greatly reduced compared to method B of blowing atmospheric gas from the side or C in the atmosphere. It can be seen that the ball hardness is about the same as the value of the ball.

本発明のワイヤーボンディング方法を適用するのに適し
ている金属ワイヤーとしては、ボール形或時に表面酸化
あるいは大気からの酸素の影響によりボール部が硬化す
る材質のものであり、例えば銅、アルミニウム、パラジ
ウム、銀及びその合金等である。Metal wires suitable for applying the wire bonding method of the present invention have a ball shape and are made of a material whose ball portion hardens due to surface oxidation or the influence of oxygen from the atmosphere, such as copper, aluminum, palladium, etc. , silver and its alloys, etc.

また、添加元素濃度の高い金合金のボンディングに際し
ても、本発明の方法の適用が有効であり、ボンディング
作業の安定化及びボンディング部の特性安定に貢献する
。The method of the present invention is also effective in bonding gold alloys with a high concentration of additive elements, and contributes to stabilizing the bonding work and stabilizing the characteristics of the bonded part.

なお、雰囲気ガスの効果を高めるために、不活性ガスあ
るいは還元性ガスを加熱して流すことや、キャピラリー
を加熱することなども有効である。Note that in order to enhance the effect of the atmospheric gas, it is also effective to heat an inert gas or a reducing gas and to flow it, or to heat the capillary.

（作　　用） この発明においては、酸素濃度の低い雰囲気中でボール
形成、ポールボンディング及びステッチボンディングを
行なうようにしたことから、ボール部及び電極の表面酸
化が防止され、ボール部の硬さも電極の硬さと同程度に
なり、あるいは金属ワイヤー及びリードの表面酸化が防
止され良好なボンディングが達成される。(Function) In this invention, since ball formation, pole bonding, and stitch bonding are performed in an atmosphere with a low oxygen concentration, surface oxidation of the ball portion and the electrode is prevented, and the hardness of the ball portion is lower than that of the electrode. The hardness becomes comparable, or surface oxidation of metal wires and leads is prevented, achieving good bonding.

（実　施　例） 以下に本発明の実施例を図面にもとづいて説明する。第
２図の（ａ），（ｂ），（ｃ｝に示した装置を用いて、
ボンディングワイヤー１として、線径２５ｔｍの銅ワイ
ヤー（銅純度９９．９９９％）を使い、シール用ガスと
してＡｒ＋１０％Ｈ２の還元性ガスを用いガス流量を１
ρ／ａｋｉｎに調整してワイヤーボンディングを行なっ
た。第２図（ｂ）は、キャビラリーの内部に上記ガスを
導き、キャビラリー先端部よりシール用ガスをワイヤー
に沿って噴出させる方法、（Ｃ〉はキャピラリーの周囲
にテフロン製の導管をまき、キャピラリーと導管とのす
き間にシール用ガスを通し、キャピラリー先端部から上
記ガスをワイヤーに沿って噴出させる方法、（ａ）は（
ｂ）と（Ｃ）とを組み合せた方法である。何れの方法も
キャピラリ一先端部よりワイヤーを包みこむようにシー
ル用ガスにより非酸化性雰囲気を形成する。このガス雰
囲気中にて銅ワイヤーと放電電極との間に高電圧をかけ
その間に放電を起し、アークの形成により熱が銅ワイヤ
ーの先端に投与されボール部が形成される。ボール部の
形成後、前述のシール用ガス雰囲気中でキャピラリーチ
ップ３を用いてボール部を半導体チップ上のアルミ電極
に熱圧着するとボール部が変形し、アルミ電極との接合
が行なわれた。その後、前記ガス雰囲気中でキャピラリ
ーチップを用い銅ワイヤーの他端をリードに超音波振動
にて圧着した。(Example) Examples of the present invention will be described below based on the drawings. Using the equipment shown in Figure 2 (a), (b), and (c),
A copper wire (copper purity 99.999%) with a wire diameter of 25 tm was used as the bonding wire 1, a reducing gas of Ar + 10% H2 was used as the sealing gas, and the gas flow rate was 1.
Wire bonding was performed by adjusting ρ/akin. Figure 2(b) shows a method in which the gas is introduced into the inside of the capillary and sealing gas is ejected from the tip of the capillary along the wire; (C) shows a method in which a Teflon conduit is spread around the capillary; A method of passing a sealing gas through the gap between the capillary and the conduit and ejecting the gas from the tip of the capillary along the wire, (a) is (
This method is a combination of b) and (C). In either method, a non-oxidizing atmosphere is formed with a sealing gas so as to wrap around the wire from the tip of the capillary. In this gas atmosphere, a high voltage is applied between the copper wire and the discharge electrode to generate a discharge therebetween, and as an arc is formed, heat is applied to the tip of the copper wire to form a ball portion. After the ball portion was formed, the ball portion was thermocompression bonded to the aluminum electrode on the semiconductor chip using the capillary chip 3 in the aforementioned sealing gas atmosphere, and the ball portion was deformed and bonded to the aluminum electrode. Thereafter, the other end of the copper wire was crimped onto a lead using a capillary tip in the gas atmosphere using ultrasonic vibration.

本発明の方法により、ボールを作成した場合のボール部
の変形能を第１表に示す。変形能は第１図（Ｃ）に示す
ように、ボール部を一定速度で圧縮変形させ、２０μ変
形させるのに必要な荷重であらわした。ボールの径は７
５ｔｍφになるように放電時間を調節した。また実際に
チップ上にボールボンディングした時のチップの損傷率
を調べた。Table 1 shows the deformability of the ball portion when the ball was made by the method of the present invention. As shown in FIG. 1(C), the deformability was expressed as the load required to compress and deform the ball portion at a constant speed to deform it by 20μ. The diameter of the ball is 7
The discharge time was adjusted to 5tmφ. We also investigated the damage rate of the chip when ball bonding was actually performed on the chip.

その結果も第１表に示す。The results are also shown in Table 1.

また、比較例として、横から雰囲気ガスを流す方法によ
り形成した銅ワイヤーのボールの変形量ならびにボンデ
ィングした場合のチップ損傷率を、参考例として同様に
空気中で９９．９９％金ワイヤーを用いた場合のボール
部の変形量、チップ損傷率を第１表に合わせて示した。In addition, as a comparative example, the amount of deformation of a copper wire ball formed by flowing atmospheric gas from the side and the chip damage rate when bonded were measured. The amount of deformation of the ball portion and the chip damage rate in each case are shown in Table 1.

またそれぞれのワイヤー、雰囲気条件を変えた場合につ
いて、第１ボンド、第２ボンド間を２ｍｍに設定してボ
ンディングした後、ワイヤー中央部をフックで引かけ引
張った時（フックテスト）の破断部の位置を調査した。In addition, when each wire and the atmosphere conditions were changed, after bonding with the distance between the first bond and the second bond set to 2 mm, the center of the wire was hooked and pulled (hook test). I investigated the location.

ワイヤ一部で破断した場合の割合が高いほど接合部強度
が十分高いと判断される。It is judged that the higher the percentage of cases where a part of the wire breaks, the higher the joint strength is sufficiently high.

このようにして本発明の方法では、キャビラリーの先端
で効率よく、また作業性よくシール用ガス雰囲気を作る
ようにし、その雰囲気中でポールボンディング及びステ
ッチボンディングを行なうようにしたので、金ワイヤー
と同様に銅ワイヤーでもチップの損傷はなく現在用いら
れている金ワイヤーに代えて銅ワイヤー等の使用も可能
になる。In this way, in the method of the present invention, a sealing gas atmosphere is created efficiently and with good workability at the tip of the cavity, and pole bonding and stitch bonding are performed in this atmosphere, so that gold wire and Similarly, copper wire will not damage the chip, making it possible to use copper wire instead of the currently used gold wire.

（発明の効果） 以上のように本発明によれば良好なガス雰囲気を形成で
き、その中でボンディング作業を行なうようにしたので
、電極及び半導体チップを良好に接合でき、金ワイヤー
に代えて低廉な金属ワイヤーの使用が可能になり、また
、金属ワイヤーとリードとの接合性を向上でき銀の使用
量の大幅な低減ならびに省工程化が可能となるなど、工
業的価値は極めて大きい。(Effects of the Invention) As described above, according to the present invention, a good gas atmosphere can be formed and the bonding work can be performed in that atmosphere, so that electrodes and semiconductor chips can be bonded well, and it is an inexpensive alternative to gold wire. The industrial value is extremely large, as it makes it possible to use metal wires that are suitable for metal wires, improves the bonding properties between metal wires and leads, significantly reduces the amount of silver used, and saves manufacturing processes.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（ａ）は、本発明方法及び他の方法により得たワ
イヤーボールの酸化の度合、同図（ｂ）はボール硬さに
対する本発明方法及び他の方法の効果を示す図、同図（
Ｃ）はボール部圧縮強度測定法を示す図、第２図は本発
明の方法を実施するための装置例、第３図は従来の金ワ
イヤーのボンディング状況を示す説明図、第４〜６図は
先行技術例を示す図である。 １・・・ボンディングワイヤー ２・・・ボール部　　　　　　　３・・・キャビラリ−
４・・・シール用ガスの導管 ５・・・シール用ガスの雰囲気 ６・・・金ワイヤー　　　　　７・・・半導体チップ８
・・・アルミ電極　　　　　９・・・リード１０・・・
金ワイヤーボール部 １１・・・放電電極 ｌ２・・・シール用壁（シールド力バー）ｌ３・・・シ
ール用吹抜け筒体 １４・・・還元性高温ガスノズル ｌ５・・・電気トーチ ｌ６・・・不活性ガスノズル　　１７・・・試料台１８
・・・平面圧子 復代理人FIG. 1(a) shows the degree of oxidation of wire balls obtained by the method of the present invention and other methods, and FIG. 1(b) shows the effects of the method of the present invention and other methods on ball hardness. (
C) is a diagram showing a ball part compressive strength measurement method, Figure 2 is an example of an apparatus for carrying out the method of the present invention, Figure 3 is an explanatory diagram showing a conventional gold wire bonding situation, and Figures 4 to 6. 1 is a diagram showing an example of a prior art. 1... Bonding wire 2... Ball part 3... Cavillary
4... Sealing gas conduit 5... Sealing gas atmosphere 6... Gold wire 7... Semiconductor chip 8
...Aluminum electrode 9...Lead 10...
Gold wire ball part 11...Discharge electrode l2...Sealing wall (shielding force bar) l3...Blow-through cylinder for sealing 14...Reducing high temperature gas nozzle l5...Electric torch l6...Non Active gas nozzle 17...sample stage 18
...Flat indenter agent

Claims (1)

【特許請求の範囲】[Claims] 　キャピラリーの内部及び外周部の何れか又は両方から
、シール用還元性ガス又は不活性ガスを金属ワイヤーに
沿って流し、キャピラリー先端部からボンディング部に
かけてシールすることを特徴とするワイヤーボンディン
グ方法。A wire bonding method characterized by flowing a sealing reducing gas or an inert gas along a metal wire from either or both of the inside and the outer periphery of the capillary to seal from the tip of the capillary to the bonding part.
JP1188813A 1989-07-24 1989-07-24 Wire bonding Pending JPH0354837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1188813A JPH0354837A (en) 1989-07-24 1989-07-24 Wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1188813A JPH0354837A (en) 1989-07-24 1989-07-24 Wire bonding

Publications (1)

Publication Number Publication Date
JPH0354837A true JPH0354837A (en) 1991-03-08

Family

ID=16230263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1188813A Pending JPH0354837A (en) 1989-07-24 1989-07-24 Wire bonding

Country Status (1)

Country Link
JP (1) JPH0354837A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294975A (en) * 2006-04-26 2007-11-08 Kulicke & Soffa Industries Inc System of reducing oxidation for use in wire bonding
WO2008087922A1 (en) * 2007-01-15 2008-07-24 Nippon Steel Materials Co., Ltd. Bonding structure of bonding wire and method for forming the bonding structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054446A (en) * 1983-09-05 1985-03-28 Mitsubishi Electric Corp Wire bonding device
JPS6178131A (en) * 1984-09-25 1986-04-21 Toshiba Corp Wire bonding device
JPS6390834A (en) * 1986-10-06 1988-04-21 Hitachi Ltd Method and apparatus for wire bonding

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054446A (en) * 1983-09-05 1985-03-28 Mitsubishi Electric Corp Wire bonding device
JPS6178131A (en) * 1984-09-25 1986-04-21 Toshiba Corp Wire bonding device
JPS6390834A (en) * 1986-10-06 1988-04-21 Hitachi Ltd Method and apparatus for wire bonding

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294975A (en) * 2006-04-26 2007-11-08 Kulicke & Soffa Industries Inc System of reducing oxidation for use in wire bonding
WO2008087922A1 (en) * 2007-01-15 2008-07-24 Nippon Steel Materials Co., Ltd. Bonding structure of bonding wire and method for forming the bonding structure
JPWO2008087922A1 (en) * 2007-01-15 2010-05-06 新日鉄マテリアルズ株式会社 Bonding wire bonding structure and method for forming the same
US8247911B2 (en) 2007-01-15 2012-08-21 Nippon Steel Materials Co., Ltd. Wire bonding structure and method for forming same

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