JPH0468548A - Method and apparatus for wire bonding of coated wire - Google Patents

Method and apparatus for wire bonding of coated wire

Info

Publication number
JPH0468548A
JPH0468548A JP2182339A JP18233990A JPH0468548A JP H0468548 A JPH0468548 A JP H0468548A JP 2182339 A JP2182339 A JP 2182339A JP 18233990 A JP18233990 A JP 18233990A JP H0468548 A JPH0468548 A JP H0468548A
Authority
JP
Japan
Prior art keywords
bonding
wire
chip
temperature
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2182339A
Other languages
Japanese (ja)
Inventor
Hideyuki Akimoto
英行 秋元
Koichiro Mukoyama
向山　光一郎
Shinichi Hanada
信一 花田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP2182339A priority Critical patent/JPH0468548A/en
Publication of JPH0468548A publication Critical patent/JPH0468548A/en
Pending legal-status Critical Current

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Classifications

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    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To increase an adhesion between an outer lead and a coated wire while keeping the temperature at the chip side lower than the circuit destruction temperature by joining the coated wire to a second bonding section at the outer lead side by thermocompression or by thermocompression together with ultrasonic waves with the second bonding section heated to higher temperature than a first bonding section at the Chip side. CONSTITUTION:Betweem a bonding stage B and the central part A1 of a lead frame on which a chip 1 is mounted, a heat stage 4a is installed which is almost the same size with the chip 1. Apart from the heat stage 4a at the chip 1 side, another heat stages 4b are installed between the bonding stage B and the outer part A2 of the lead frame on which outer leads 2 are formed. On the upper surface of the chip 1, electrodes 1a and first bonding sections 1b where one end of coated wire 3 are joined by ball bonding using a capillary are formed. The outer lead 2 is made of Cu, Fe or other material which is plated with Ag, Al, etc. On the upper surface of each outer lead 2, a second bonding section 2a is formed where the other end of the coated wire 3 is joined by thermocompression wire bonding or by thermocompression wire bonding together with ultrasonic waves.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は熱圧着ワイヤボンダ又は超音波併用熱圧着ワイ
ヤホンダを使用して被覆線の芯線をパッケージの外部リ
ードに接続する被覆線のワイヤボンディング方法及びそ
の装置に関する。[Detailed Description of the Invention] <Industrial Application Field> The present invention provides a method for wire bonding a coated wire to connect a core wire of the coated wire to an external lead of a package using a thermocompression wire bonder or a thermocompression wire bonder combined with ultrasonic waves. and its apparatus.

〈従来の技術〉 従来、この種のワイヤボンディング方法及びその装置と
して１つのヒートステージ上にパッケージ基板を介して
チップと外部リードを配設し、該ヒートステージでチッ
プと外部リードを加熱した状態において、被覆線の一端
をポールホンディングした後に他端を外部リードに熱圧
着ワイヤボンディングするか、又は超音波併用熱圧着ワ
イヤホンディングしたものがあり、更にチップと外部リ
ードとの間にトチゴマを立設し、その上面でボンディン
グワイヤを支えることにより、だれを防止してワイヤシ
ョートが発生しないようにしたものがある。<Prior Art> Conventionally, as this type of wire bonding method and apparatus, a chip and external leads are disposed on one heat stage via a package substrate, and the chip and external leads are heated by the heat stage. In some cases, one end of the coated wire is pole-bonded, and then the other end is wire-bonded by thermo-compression to the external lead, or wire-bonded by thermo-compression in conjunction with ultrasonic waves, and a horse chestnut is placed between the chip and the external lead. There is a device that supports the bonding wire on its upper surface to prevent sagging and prevent wire shorts from occurring.

〈発明が解決しようとする課題〉 しかし乍ら、この様な従来のワイヤボンディング方法及
びその装置で被覆線をボンディングすると、チップ側の
ボンディングの時はボール形成の電気トーチの放電エネ
ルギーによって被覆膜か溶けてしまうため問題はないが
、外部リード側の被覆膜を接合の邪魔にならないように
除去することか難しいため、この外部リードと被覆線の
接合力がチップと被覆線の接合力に比べて弱く、その結
果被覆線全体の接合強度を低下させていた。<Problems to be Solved by the Invention> However, when bonding coated wires using such conventional wire bonding methods and devices, when bonding on the chip side, the coated wire is damaged by the discharge energy of the electric torch used to form the ball. However, it is difficult to remove the coating film on the external lead side so that it does not interfere with the bonding, so the bonding force between the external lead and the covered wire is the bonding force between the chip and the covered wire. As a result, the bonding strength of the entire covered wire was reduced.

そこで、外部リードと被覆線との接合温度を高くして被
覆線を加熱することにより、被覆膜が剥離し易くなって
芯線を完全に露出せしめその接合力を向上させることか
考えられる。Therefore, it is conceivable that by increasing the bonding temperature between the external lead and the covered wire and heating the covered wire, the coating film will be easily peeled off, completely exposing the core wire, and improving the bonding force.

しかし、上記従来のワイヤボンディング方法及びその装
置では外部リードとチップが同じ温度に加熱されるため
、外部リードを高温加熱するとこれに伴ってチップも高
温加熱されるが、半導体用チップは高温に耐えられる構
造になっていないから回路破壊が生して使用不能になる
という問題かある。However, in the conventional wire bonding method and device described above, the external leads and the chip are heated to the same temperature, so when the external leads are heated to a high temperature, the chip is also heated to a high temperature, but semiconductor chips can withstand high temperatures. The problem is that the circuit is not designed to be able to withstand damage, resulting in circuit damage and rendering it unusable.

また、特にチップの電極及び外部リードかＡｔにより形
成されて被覆線の芯線がＡｕの場合にはその接合温度が
高い時はど金属間化合物の生成スピードか速いため、チ
ップか高温加熱されると最短でもチップに被覆線を接合
した時から外部リードに被覆線を接合し終るまでの間、
速いスピードで金属間化合物が電極と芯線のチップ側端
部との間に生成し続け、その結果はかれの原因となると
いう問題かある。In addition, especially when the electrodes and external leads of the chip are made of At and the core wire of the coated wire is Au, the rate at which intermetallic compounds are formed is rapid when the bonding temperature is high, so if the chip is heated to high temperatures. At the earliest, from the time the covered wire is bonded to the chip until the time the covered wire is bonded to the external lead,
There is a problem in that intermetallic compounds continue to be formed between the electrode and the tip side end of the core wire at a high speed, resulting in burns.

更に、ヒートステージの熱によってトチゴマも略同温度
に加熱されるため、ボンディングした被覆線がたれてト
チゴマに接触すると、接触した部分の被覆膜が熱で組成
変形し始めて絶縁耐圧が落ちワイヤショート防止機能か
損なわれるという問題もある。Furthermore, the heat from the heat stage heats the horse chestnuts to approximately the same temperature, so when the bonded covered wire sags and comes into contact with the horse chestnuts, the composition of the coating film in the contact area begins to change due to the heat, lowering the dielectric strength and causing wire shorts. There is also the problem that the prevention function is impaired.

本発明は斯る従来事情に鑑み、チップ側の温度を回路破
壊温度よりも低く保持しながら外部リードと被覆線との
接合力を向上させることを第１の目的とし、チップ側の
金属間化合物の生成スピードを鈍くすることを第２の目
的とし、被覆線のたれによる被覆膜の組成変形をなくす
ことを第３の目的とする。In view of such conventional circumstances, the first object of the present invention is to improve the bonding strength between the external lead and the covered wire while maintaining the temperature on the chip side lower than the circuit breakdown temperature, and to improve the bonding strength between the external lead and the covered wire. The second purpose is to slow down the formation speed of the wire, and the third purpose is to eliminate compositional deformation of the coating film due to sagging of the coated wire.

〈課題を解決するための手段〉 上記課題を解決するために本発明が講する技術的手段は
、チップ側の第１ボンド部より外部リード側の第２ボン
ド部を高い温度に加熱した状態で、第２ボンド部に被覆
線を熱圧着又は超音波併用熱圧着して接合させることを
特徴とする方法である。<Means for Solving the Problems> The technical means taken by the present invention to solve the above problems is to heat the second bond part on the external lead side to a higher temperature than the first bond part on the chip side. This method is characterized in that the coated wire is bonded to the second bond portion by thermocompression bonding or thermocompression bonding using ultrasonic waves.

そして、チップ側の第１ボンド部と外部リード側の第２
ボンド部に別々のヒートステージを設け、該第２ボンド
部のヒートステージの加熱温度を第１ボンド部のヒート
ステージより高くしたことを特徴とするものである。Then, the first bond part on the chip side and the second bond part on the external lead side.
It is characterized in that separate heat stages are provided in the bond parts, and the heating temperature of the heat stage of the second bond part is set higher than that of the heat stage of the first bond part.

また、第１ボンド部のヒートステージと第２ボンド部の
ヒートステージとの間に断熱壁を立設することが好まし
く、更に断熱壁の上面を被覆線のたれ受け面とすること
が好ましい。Further, it is preferable that a heat insulating wall is provided upright between the heat stage of the first bonding part and the heat stage of the second bonding part, and furthermore, it is preferable that the upper surface of the heat insulating wall is used as a sag receiving surface for the covered wire.

〈作用〉 本発明は上記技術的手段によれば、第２ボンド部の加熱
温度を第１ボンド部より高くして被覆線の端部を第２ボ
ンド部に熱圧着するか又は超音波併用熱圧着することに
より、該部分の被覆膜たけが高温になって軟化し、つぶ
されて破れ易くなり芯線を露出させるものである。<Function> According to the technical means of the present invention, the heating temperature of the second bonding part is made higher than that of the first bonding part, and the end of the covered wire is thermocompression bonded to the second bonding part, or the heating temperature in combination with ultrasonic waves is bonded to the second bonding part. By crimping, the thickness of the coating film at that part becomes high temperature and softens, making it easy to crush and tear, exposing the core wire.

また、断熱壁により外部リード側からチ・ツブ側への熱
放散が防止される。Furthermore, the heat insulating wall prevents heat dissipation from the external lead side to the chip/tube side.

更に断熱壁の上面が被覆膜組成変形温度まで加熱されな
いものである。Furthermore, the upper surface of the heat insulating wall is not heated to the temperature at which the coating composition deforms.

〈実施例〉 以下、本発明の一実施例を図面に基ついて説明する。<Example> An embodiment of the present invention will be described below with reference to the drawings.

この実施例は第１図に示す如くチップ１か取付けられる
リードフレームの中央部Ａ□とホンディングステージＢ
との間に、チップ１と略同じ大きさのヒートステージ４
ａを設けると共に、外部り一ド２が形成されるリードフ
レームの周囲部Ａ２とボンディングステージＢとの間に
、上記チップ１側のヒートステージ４ａと別なヒートス
テージ４ｂを設けたものである。In this embodiment, as shown in Fig. 1, the central part A
A heat stage 4, which is approximately the same size as the chip 1, is placed between the chip 1 and the chip 1.
In addition, a heat stage 4b separate from the heat stage 4a on the chip 1 side is provided between the bonding stage B and the peripheral portion A2 of the lead frame where the external lead 2 is formed.

チップ１の上面には電極１ａが形成され、キャピラリを
使用して被覆線３の一端がボールボンディングされる第
１ボンド部ｌｂを有する。An electrode 1a is formed on the upper surface of the chip 1, and has a first bonding portion lb to which one end of the covered wire 3 is ball-bonded using a capillary.

外部リード２は例えばＣｕ、　Ｆｅ等の表面にＡｇ、　
ＡＭ等をメツキして形成され、その上面には被覆線３の
他端が熱圧着ワイヤボンディングか又は超音波併用熱圧
着ワイヤボンディングされる第２ボンド部２ａを有する
。For example, the external lead 2 is made of Cu, Fe, etc. with Ag,
It is formed by plating AM or the like, and has a second bonding portion 2a on its upper surface, to which the other end of the covered wire 3 is wire-bonded using thermocompression or ultrasonic bonding.

被覆線３は例えばＡｕ、　Ａ１−９ｉ合金、　Ｃｏ等か
らなる芯線３ａの外周面に例えば耐熱ポリウレタン、ホ
ルマール等の熱硬化性樹脂からなる被覆材を略均−に被
覆して被覆膜３ｂが形成される。The coated wire 3 is made by coating the outer peripheral surface of a core wire 3a made of, for example, Au, A1-9i alloy, Co, etc. with a coating material made of a thermosetting resin such as heat-resistant polyurethane or formal to form a coating film 3b. It is formed.

また、上記チップ１側のヒートステージ４ａ及び外部リ
ード２側のヒートステージ４ｂはヒータとこれを設定温
度に維持する例えば熱電対等からなる制御部を内蔵した
従来周知構造のものであり、夫々が温度コントローラに
電気的に連通されてチップ１側のヒートステージ４ａを
常温からチップ１か回路破壊を生じない温度、例えば３
５０６Ｃ位までの間で温度制御し、外部リード２側のヒ
ートステージ４ｂを常温から外部リード２が反ったりそ
のメツキ層が粒化や劣化して接合強度の低下を起こさな
い温度、例えば６００℃位までの間で温度制御する。Furthermore, the heat stage 4a on the chip 1 side and the heat stage 4b on the external lead 2 side have a conventionally well-known structure including a built-in heater and a control unit, such as a thermocouple, for maintaining the heater at a set temperature. The heat stage 4a on the chip 1 side is electrically connected to the controller and heated from room temperature to a temperature that does not cause circuit damage to the chip 1, for example 3.
The temperature is controlled at a temperature of up to about 506C, and the heat stage 4b on the external lead 2 side is heated from room temperature to a temperature at which the external lead 2 does not warp or its plating layer becomes grainy or deteriorates, causing a decrease in bonding strength, for example, about 600C. The temperature is controlled between.

而してチップ１の電極１ａをヒートステージ４ａてチッ
プ１の回路破壊温より低い温度に加熱するか或いは常温
のままの状態において被覆線３の一端をボールボンディ
ングした後に、外部リード２をヒートステージ４ｂで上
記電極１ａの温度より高い温度に加熱して被覆線３の他
端を熱圧着ワイヤホンディング又は超音波併用熱圧着ワ
イヤボンディングすれば、被覆線３の外部リード２側端
部だけが高温になって軟化し、つぶされて破れ易くなり
芯線３ａを露出させる結果となる。After heating the electrode 1a of the chip 1 to a temperature lower than the circuit breakdown temperature of the chip 1 using the heat stage 4a, or ball bonding one end of the covered wire 3 at room temperature, the external lead 2 is placed on the heat stage. 4b, the other end of the covered wire 3 is heated to a temperature higher than the temperature of the electrode 1a, and the other end of the covered wire 3 is subjected to thermocompression wire bonding or ultrasonic thermocompression wire bonding, so that only the end of the covered wire 3 on the external lead 2 side becomes high temperature. The core wire 3a becomes soft, becomes crushed and easily breaks, and the core wire 3a is exposed.

即ち、第２ボンド部２ａの接合温度が接合強向上の重要
な要因となる。That is, the bonding temperature of the second bond portion 2a becomes an important factor in improving bonding strength.

そこで、被覆線３線径が３０μでその芯線３ａの材質か
異なるものを複数種類用意し、第２ボンド部２ａの加熱
温度を第１ボンド部ｌｂの温度より高く加熱した状態で
ボンディング作業を行った本発明方法のものと、第２ボ
ンド部２ａと第１ボンド部１ｂを同温度に加熱した状態
でポンデイグ作業を行った従来方法のものとを夫々プル
テストして測定した結果及び絶縁耐圧の低下や被覆膜３
の脆化等の被覆膜３ｂの劣化の有無を測定した結果を次
表１に示す。Therefore, we prepared multiple types of coated wires with a diameter of 30μ and core wires 3a made of different materials, and performed the bonding work while heating the second bonding part 2a to a higher temperature than the first bonding part lb. Results of pull tests and measurements of the method of the present invention and the method of the conventional method in which the bonding operation was performed with the second bond part 2a and the first bond part 1b heated to the same temperature, and the decrease in dielectric strength voltage. and coating film 3
The results of measuring the presence or absence of deterioration of the coating film 3b such as embrittlement are shown in Table 1 below.

この測定結果により第２ボンド部２ａの加熱温度が高く
なるものほど引張り強度が向上することが判り、チップ
１の回路破壊や被覆膜３ｂの劣化が発生せずに接合強度
が向上することが理解される。The measurement results show that the higher the heating temperature of the second bond part 2a, the higher the tensile strength, and it is possible to improve the bonding strength without causing damage to the circuit of the chip 1 or deterioration of the coating film 3b. be understood.

次に、第２図に示すものは本発明の他の実施例であり、
このものはチップ上側のヒートステージ４ａと外部リー
ド２側のヒートステージ４ｂとの間に例えばペルティエ
素子の冷却部からなる断熱壁５を立設し、このペルティ
エ素子の本体５ａはその表面に例えば高純度のシリカア
ルミナ系の原料を電気炉にて溶融しこれを高速の圧縮空
気により吹き飛ばして繊維化した断熱材５ｂを被覆した
状態でボンディングステージＢに埋設され、更にこの断
熱壁５の上面をチップ１の上面や外部リード２の上面よ
り高く形成して、ボンディング後の被覆線３にループが
たれを生じた時に支えるたれ受け面５Ｃとしたものであ
る。Next, what is shown in FIG. 2 is another embodiment of the present invention,
In this device, a heat insulating wall 5 made of, for example, a cooling part of a Peltier element is erected between a heat stage 4a on the upper side of the chip and a heat stage 4b on the side of the external leads 2. A pure silica-alumina raw material is melted in an electric furnace and blown away with high-speed compressed air to form a fiber, which is covered with a heat insulating material 5b, which is buried in the bonding stage B, and the upper surface of this heat insulating wall 5 is covered with a chip. 1 and the top surface of the external lead 2 to serve as a sagging receiving surface 5C that supports the loop when the coated wire 3 sags after bonding.

而して外部リード２をヒートステージ４ｈでチップ１の
電極１ａより高い温度に加熱しても、断熱壁５により外
部リード２側からチップ１側への熱放散が防止されて該
電極１１と芯線３ａのチップ１側端部との間にできる金
属間化合物の生成スピードを鈍くする結果となる。Therefore, even if the external lead 2 is heated to a higher temperature than the electrode 1a of the chip 1 by the heat stage 4h, the heat insulation wall 5 prevents heat dissipation from the external lead 2 side to the chip 1 side, and the electrode 11 and the core wire This results in a slowing down of the formation speed of an intermetallic compound formed between the tip 3a and the end on the chip 1 side.

そこで、断熱壁５を立設したもので前記実施例と同様に
測定した結果を次表Ｈに示す。Therefore, the following Table H shows the results of measurements made in the same manner as in the above-mentioned example using a device with a heat insulating wall 5 erected.

表■ この測定結果により第２ボンド部２ａの加熱温度が高く
なっても被覆膜３ｂの劣化が全く発生しないことが判り
、ワイヤショート防止機能が損なわれないことが理解さ
れる。Table 2 The measurement results show that the coating film 3b does not deteriorate at all even if the heating temperature of the second bond portion 2a becomes high, and it is understood that the wire short prevention function is not impaired.

〈発明の効果〉 本発明は上記の構成であるから、以下の利点を有する。<Effect of the invention> Since the present invention has the above configuration, it has the following advantages.

■　第２ボンド部の加熱温度を第１ボンド部より高くし
て被覆線の端部を第２ボンド部に熱圧着するか又は超音
波併用熱圧着することにより、該部分の被覆膜だけが高
温になって軟化し、つぶされて破れ易くなり芯線を露８
させるので、チップ側の温度を回路破壊温度よりも低く
保持しながら外部リードと被覆線との接合力を向上させ
ることができる。■ The heating temperature of the second bond part is higher than that of the first bond part, and the end of the covered wire is thermocompression bonded to the second bond part, or by thermocompression bonding with ultrasonic waves, only the coating film in that part is bonded. It becomes high temperature, softens, gets crushed and breaks easily, and the core wire becomes exposed to dew.
Therefore, the bonding strength between the external lead and the covered wire can be improved while maintaining the temperature on the chip side lower than the circuit breakdown temperature.

従って、外部リードとチップが同じ温度に加熱される従
来のものに比べ、チップの回路破壊が生じて使用不能に
なることがないと共に、被覆線全体の接合強度を向上さ
せることができる。Therefore, compared to the conventional method in which the external leads and the chip are heated to the same temperature, the circuit of the chip will not be destroyed and become unusable, and the bonding strength of the entire covered wire can be improved.

■　断熱壁により外部リード側からチップ側への熱放散
が防止されるので、チップ側の金属間化合物の生成スピ
ードを鈍くすることができる。(2) Since heat dissipation from the external lead side to the chip side is prevented by the heat insulating wall, the generation speed of intermetallic compounds on the chip side can be slowed down.

従って、被覆線のはがれかなくなり、更に接合強度を向
上させることができる。Therefore, peeling of the covered wire is prevented, and the bonding strength can be further improved.

■　断熱壁の上面が被覆膜組成変形温度まで加熱されな
いので、被覆線のたれによる被覆膜の組成変形をなくす
ことができる。(2) Since the upper surface of the heat insulating wall is not heated to the coating film composition deformation temperature, compositional deformation of the coating film due to sagging of the covered wire can be eliminated.

従って、ワイヤシーヨード防止機能か損なわれない。Therefore, the wire sea iodine prevention function is not impaired.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例を示す被覆線のワイヤボンデ
ィング方法及びその装置の部分拡大縦断面図、第２図は
本発明の他の実施例を示す部分拡大縦断面図である。 １・・・チップ　　　　　２・・・外部リード３・・・
被覆線 ４３・・・ヒートステージ（チップ側）４ｂ・・・ヒー
トステージ（外部リード側）訃・・断熱壁　　　　　５
ｃ・・・たれ受け面手 続 補 正 書 １゜ 事件の表示 平成２年 特 許 願 第 号 平成 年 月 日FIG. 1 is a partially enlarged vertical cross-sectional view of a covered wire wire bonding method and apparatus showing one embodiment of the present invention, and FIG. 2 is a partially enlarged longitudinal cross-sectional view showing another embodiment of the present invention. 1...Chip 2...External lead 3...
Covered wire 43...Heat stage (chip side) 4b...Heat stage (external lead side)...Insulating wall 5
c... Written amendment to the drooping procedure 1゜Indication of the case 1990 Patent Application No. 1998 Date

Claims (4)

【特許請求の範囲】[Claims] （１）チップ側の第１ボンド部より外部リード側の第２
ボンド部を高い温度に加熱した状態で、第２ボンド部に
被覆線を熱圧着又は超音波併用熱圧着して接合させるこ
とを特徴とする被覆線のワイヤボンディング方法。(1) From the first bond part on the chip side to the second bond part on the external lead side
A wire bonding method for a coated wire, characterized in that the coated wire is bonded to a second bond portion by thermocompression bonding or thermocompression bonding using ultrasonic waves while the bond portion is heated to a high temperature. （２）チップ側の第１ボンド部と外部リード側の第２ボ
ンド部に別々のヒートステージを設け、該第２ボンド部
のヒートステージの加熱温度を第１ボンド部のヒートス
テージより高くしたことを特徴とする被覆線のワイヤボ
ンディング装置。(2) Separate heat stages are provided for the first bond part on the chip side and the second bond part on the external lead side, and the heating temperature of the heat stage of the second bond part is set higher than that of the heat stage of the first bond part. Wire bonding equipment for covered wires featuring: （３）第１ボンド部のヒートステージと第２ボンド部の
ヒートステージとの間に断熱壁を立設した請求項２記載
の被覆線のワイヤボンディング装置。(3) The coated wire wire bonding apparatus according to claim 2, further comprising a heat insulating wall erected between the heat stage of the first bond section and the heat stage of the second bond section. （４）断熱壁の上面を被覆線のたれ受け面とした請求項
３記載の被覆線のワイヤボンディング装置。(4) The coated wire wire bonding apparatus according to claim 3, wherein the upper surface of the heat insulating wall is a sagging receiving surface for the coated wire.
JP2182339A 1990-07-09 1990-07-09 Method and apparatus for wire bonding of coated wire Pending JPH0468548A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2182339A JPH0468548A (en) 1990-07-09 1990-07-09 Method and apparatus for wire bonding of coated wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2182339A JPH0468548A (en) 1990-07-09 1990-07-09 Method and apparatus for wire bonding of coated wire

Publications (1)

Publication Number Publication Date
JPH0468548A true JPH0468548A (en) 1992-03-04

Family

ID=16116582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2182339A Pending JPH0468548A (en) 1990-07-09 1990-07-09 Method and apparatus for wire bonding of coated wire

Country Status (1)

Country Link
JP (1) JPH0468548A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0729943A (en) * 1993-07-13 1995-01-31 Nec Corp Wire bonding method
US5894983A (en) * 1997-01-09 1999-04-20 Harris Corporation High frequency, low temperature thermosonic ribbon bonding process for system-level applications

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0729943A (en) * 1993-07-13 1995-01-31 Nec Corp Wire bonding method
US5894983A (en) * 1997-01-09 1999-04-20 Harris Corporation High frequency, low temperature thermosonic ribbon bonding process for system-level applications

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