JPS60154537A - Method of producing semiconductor device - Google Patents

Method of producing semiconductor device

Info

Publication number
JPS60154537A
JPS60154537A JP59266538A JP26653884A JPS60154537A JP S60154537 A JPS60154537 A JP S60154537A JP 59266538 A JP59266538 A JP 59266538A JP 26653884 A JP26653884 A JP 26653884A JP S60154537 A JPS60154537 A JP S60154537A
Authority
JP
Japan
Prior art keywords
wire
electrode
semiconductor device
manufacturing
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59266538A
Other languages
Japanese (ja)
Inventor
デイヴイツド　ヴアーン　ラング
ジヨン　マイケル　パーシー，ジユニヤ
サムソン　カイム　ミルシユテイン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc, AT&T Corp filed Critical American Telephone and Telegraph Co Inc
Publication of JPS60154537A publication Critical patent/JPS60154537A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 抜倣分夏 本発明は半導体デバイスに係り、低温ボンディングによ
る半導体デバイスへの電極作成に係る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor devices, and relates to the production of electrodes on semiconductor devices by low-temperature bonding.

本Ｗ反 多くの型の半導体デバイスは、電極を必要とし、従って
半導体デバイスに対する物理的かつ電気的に信頼性のあ
る電極作成方法は、最近の技術において、きわめて重要
である。　゛事実、そのようなデバイスに対する信頼性
のある電極の作成は、しばしばきわどい半導体デバイス
製作工程であり、従ってそのような電極作用のための多
くの方法が開発されてきた。半導体デバイスは、デバイ
スまたは材料特性を損なうことなく作、られる外部パワ
ー源への所望の接続を可能にする方法によって、適当な
電極を作成しなければならない。Many types of semiconductor devices require electrodes, and therefore physically and electrically reliable methods of making electrodes for semiconductor devices are of critical importance in modern technology. In fact, the creation of reliable electrodes for such devices is often a critical semiconductor device fabrication process, and therefore many methods for such electrode operation have been developed. Semiconductor devices must be fabricated with suitable electrodes by a method that allows the desired connection to an external power source without compromising device or material properties.

電極作成のために開発された一つの方法は、当業者によ
り、一般的に熱圧着ボンディングと呼ばれる。この方法
は、半導体デバイスの電気的端子への、外部リード固着
のために開発さＡした。この方法は現在、加熱手段を用
い、所望の金属化表面と強固な物理的接触を作るよう、
金属リードワイヤを圧着することにより改善されている
。加えられる力は、典型的な場合、リードワイヤのかな
りの弾性変形を生ずるのに十分なほど高い。たとえば、
［第９回年次プロシーディングズ（９ｔｈ　Ａｎｎｕａ
ｌ［’ｒｏｃｅｅｄｉｎｇｓ　）Ｊ　リライアビリティ
・フィジックス（ｌｌｅｌｉａｂｉｌｉｔｙ　Ｐｈｙｓ
ｉｃｓ）、１９７１，１７８〜１８６頁、英国などを参
照のこと。One method developed for electrode fabrication is commonly referred to by those skilled in the art as thermocompression bonding. This method was developed for attaching external leads to electrical terminals of semiconductor devices. This method currently uses heating means to create firm physical contact with the desired metallized surface.
This is improved by crimping the metal lead wire. The applied force is typically high enough to cause significant elastic deformation of the lead wire. for example,
[9th Annual Proceedings
l['roceedings]J Reliability Phys
ics), 1971, pp. 178-186, UK.

開発されたもう一つの方法は、当業者には超音波ボンデ
ィングと呼ばれる。この方法が現在、典型的に実用され
るにつれ、超音波発生器により、トランスジューサに導
かれる高周波電気パワーが得られるようになった。トラ
ンスジューサは、電気的パワーを機械的振動に変え、そ
れは最終的にボンディング手段および金属リードに結合
され、それはボンディングプロセス中ボンド界面へエネ
ルギーを゛伝エル。たとエバ、「生蔓生量定挟！：　叉
イクロエレクトロニクス　゛ボンディング（Ｓｅｎ＋１
ｃｏｎｄｕｃｔｏｒ　Ｍｅａｓｕｒｅｍｅｎｔ　Ｔｅｃ
ｈｎｏｌｏｇｙ　：Ｍｉｃｒｏｅｌｓｃｔｒｏｎｉｃ　
Ｕｌｔｒａｓｏｎｉｃ　Ｂｏｎｄｉｎｇ）Ｊ、ジョージ
・ジ−０バーマン（Ｇｅｏｒｇｅ　Ｇ、　Ｈａｒｍａｎ
）編、ナショナル・ビュロー・オブ・スタンダード（Ｎ
ａｔｉｏｎａｌ　Ｂｕｒｅａｕ　ｏｆ　５ｔａｎｄａｒ
ｄｓ　）、１９７４年１月、２３〜７９頁を参照のこと
。Another method that has been developed is referred to by those skilled in the art as ultrasonic bonding. As this method is now typically practiced, an ultrasonic generator provides the high frequency electrical power that is directed to the transducer. The transducer converts electrical power into mechanical vibrations that are ultimately coupled to the bonding means and metal leads, which transfer energy to the bond interface during the bonding process. Toeba, ``Vegetable quantity determination!: Microelectronics ゛Bonding (Sen+1)
conductor measurement Tec
hnology:Microelsctronic
Ultrasonic Bonding) J, George G. Harman
), National Bureau of Standards (N
ational Bureau of 5tandar
ds), January 1974, pp. 23-79.

１９７７年２月１日、サムソン・カイム・ミルシュタイ
ン（Ｓａｍｓｏｎ　Ｋｈａｉｍ　Ｍｉｌｓｈｔｅｉｎ　
）に承認された米国特許第４，００５，５２３号に記載
されたもう一つのボンディング法によると、低機械歪の
ボンディングが行なえる。この方法は、金ワイヤボンデ
ィング用に開発され、電極材料中に、局部的な高温を発
生する。February 1, 1977, Samson Chaim Milstein
Another bonding method, described in U.S. Pat. No. 4,005,523, issued to U.S. Pat. This method was developed for gold wire bonding and generates localized high temperatures in the electrode material.

上で簡単に述べたプロセスを考えると、当業者には、そ
れらが半導体デバイスへの多くの電気的ボンディングを
作成する上で、完全に適してはいるが、いくつかの理由
により、デバイス動作に著しく有害な影響をおよぼす可
能性があるという結論になる。たとえば、熱圧着ボンデ
ィング中、材料は典型的な場合、３５０ないし４００℃
といった高温に加熱される。２００℃もの高温は、超音
波ボンディング法で用いることがある。ボンディングプ
ロセス中、半導体デバイスに加えられる機械的な歪は、
半導体材料中に好ましくない欠陥を発生し、それは、た
とえばデバイス動作中、破滅的な損傷を生む。電極材料
と半導体材料の異なる熱膨張係数を適合させる方法はな
いため、これらの方法において、欠陥が発生することか
ある。熱膨張係数の整合性が悪いことから発生する欠陥
は、熱サイクルが起こるとき、デバイス動作中、破滅的
な損傷を生じる可能性がある。熱的および機械的な損傷
の効果は、また、デバイス特性および寿命の両方に有害
であることも、注意すべきである。Given the processes briefly described above, it is clear to those skilled in the art that while they are perfectly suited for creating many electrical bonds to semiconductor devices, they are not suitable for device operation for several reasons. The conclusion is that it may have significant harmful effects. For example, during thermocompression bonding, materials are typically
heated to high temperatures. High temperatures as high as 200° C. are sometimes used in ultrasonic bonding methods. During the bonding process, the mechanical strain applied to the semiconductor device is
Undesirable defects are generated in the semiconductor material, which, for example, can result in catastrophic damage during device operation. Defects can occur in these methods since there is no way to match the different coefficients of thermal expansion of the electrode material and the semiconductor material. Defects resulting from poor thermal expansion coefficient matching can result in catastrophic damage during device operation when thermal cycling occurs. It should also be noted that the effects of thermal and mechanical damage are also detrimental to both device properties and lifetime.

本分１夏！枚 本発明に従うと、電極は半導体材料から成る半導体デバ
イスまたは半導体材料上の金属化ポンディングパッドに
、ワイヤの端部を加　−熱することによって、たとえば
ワイヤボンディングチップまたは他の型のガイドに固着
させ、上記ワイヤの端部に電極材料を供給し、上記ワイ
ヤの上記端部を所望の電極点に接触させることによって
作成してよい。ワイヤは導電性材料から成る。電極材料
は典型的な場合、金属である。好ましい一実施例におい
て、　Ｉワイヤ材料から成るボールが形成され、電極金
属がボールに加えられる。ボールは水素炎のようなトー
チから発生する熱風で、ワイヤを処理することにより形
成すると有利である。Duty 1 summer! According to the invention, the electrodes are bonded to a semiconductor device made of a semiconductor material or to a metallized bonding pad on a semiconductor material, for example to a wire bonding chip or other type of guide, by heating the ends of the wires. The wire may be made by applying electrode material to the end of the wire and contacting the end of the wire with a desired electrode point. The wire is made of electrically conductive material. The electrode material is typically metal. In one preferred embodiment, a ball of I-wire material is formed and electrode metal is added to the ball. Advantageously, the ball is formed by treating the wire with hot air generated from a torch, such as a hydrogen flame.

後者の場合、合金を形成するために、ワイヤの端部に余
分の金属を加えてもよい。すなわち、金属は別に接触さ
せてもよい。合金は典型的な場合、たとえば動作温度の
ようなデバイス動作の条件と矛盾しない、たとえば低融
点および最適金属特性のような特性を有する適当な金属
合金である。電極金属がワイヤの端部に添加された後、
それがその融点付近の温度に保たれる限り、ワイヤは最
初加熱する必要はない。ボールまたはワイヤ端に接触し
たとき、それはそれ自身の重さの下にあり、表面とボン
ドを生じる。溶融合金は基板の局在した部分を加熱し、
次にボールは冷却され、合金は固化してボンドを形成す
る。合金を形成する金属は、デバイスの電気的特性、機
械的強度および熱膨張特性を最適化するように選択すれ
ばよい。ワイヤボンドチップがボンドから引き離される
とき、ワイヤの端部が竿部は他の型の電気的接続のてめ
に残される。In the latter case, extra metal may be added to the end of the wire to form an alloy. That is, the metals may be contacted separately. The alloy is typically a suitable metal alloy having properties, such as a low melting point and optimal metallic properties, that are compatible with the conditions of device operation, such as operating temperature. After the electrode metal is added to the end of the wire,
The wire does not need to be heated initially as long as it is kept at a temperature near its melting point. When it touches the ball or wire end, it is under its own weight and creates a bond with the surface. The molten alloy heats localized areas of the substrate,
The ball is then cooled and the alloy solidifies to form a bond. The metals forming the alloy may be selected to optimize the electrical properties, mechanical strength, and thermal expansion properties of the device. When the wirebond chip is pulled away from the bond, the ends of the wires are left for other types of electrical connections.

本発明の方法は、発光ダイオード、レーザおよび光検出
器のような損傷に敏感な■−■族半導体デバイスへのボ
ンド製作に用いると有利である。The method of the present invention is advantageously used in bond fabrication to damage sensitive semiconductor devices such as light emitting diodes, lasers and photodetectors.

叉胤籠立隨匪 本発明は通常のワイヤボンダを用いて、急激に改善され
たが、いくつかの変形とともに、一実施例について述べ
る。当業者には、他の変形が容易に明らかとなるであろ
う。そのようなワイヤボンダは当業者には周知であり、
詳細に述べる必要はない。加熱されたガイドに固着され
るか、あるいはそれに運ばれ、金、アルミニウムまたは
もう一つの適当な材料から成るワイヤは、電極金属の融
点よりわずかに上の温度に加熱される。次に、ワイヤは
ガイドチップから延ばされ、ワイヤの端部でワイヤ金属
から成るボールを形成する手段により処理される。典型
的な手段は典型的なワイヤボンディング装置に備わって
いる水素炎のような小さなトーチからの熱風を含む。ボ
ールはワイヤで支持され、ボールはガイドチップから離
して保たれる。Although the present invention uses a conventional wire bonder and has been dramatically improved, one embodiment will be described along with some modifications. Other variations will be readily apparent to those skilled in the art. Such wire bonders are well known to those skilled in the art;
There is no need to go into detail. A wire made of gold, aluminum or another suitable material, affixed to or carried by the heated guide, is heated to a temperature slightly above the melting point of the electrode metal. The wire is then extended from the guide tip and treated by means of forming a ball of wire metal at the end of the wire. Typical means include hot air from a small torch, such as a hydrogen flame, found on typical wire bonding equipment. The ball is supported by a wire and the ball is kept away from the guide tip.

ボールは次に適当な金属電極に固着され、金属は単一成
分または合金成分を有してよい。The ball is then affixed to a suitable metal electrode, the metal may have a single component or an alloy component.

電極金属は固体または液体の形でよい。金属または金属
合金は、金属ボールによって拾い上げられ、軟化するか
ボール金属と合金を作る。電極金属は典型的な場合、金
属合金で、言いかえればそれは少なくとも二種の金属か
ら成り、それらはデバイス動作の必要条件と矛盾しない
特性を有する。構造は第１図に描かれ、ガイドアセンブ
リ（１）、ワイヤ（３）、ボール（５）および合金領域
（７）から成る。The electrode metal may be in solid or liquid form. The metal or metal alloy is picked up by the metal ball and softens or alloys with the ball metal. The electrode metal is typically a metal alloy, that is, it is composed of at least two metals that have properties consistent with the requirements of device operation. The structure is depicted in Figure 1 and consists of a guide assembly (1), a wire (3), a ball (5) and an alloy region (7).

あるいは、加熱されたワイヤの端部は、ボールを形成す
ることなく、金属電極と接してもよい。Alternatively, the heated wire end may contact the metal electrode without forming a ball.

ガイドアセンブリは、ワイヤを運び、ボールを所望の電
極点に合金化し、もしそ九までにそれが、その点にいっ
てなかったならば、ボールは半導体デバイス上の電極位
置上に下げられる。得られる構造が第２図に描かれてお
り、斜線を引いである領域（９）はポンディングパッド
または半導体デバイスを示す。The guide assembly carries the wire and alloys the ball to the desired electrode point, and if it has not previously been to that point, the ball is lowered onto the electrode location on the semiconductor device. The resulting structure is depicted in FIG. 2, with the shaded area (9) indicating the bonding pad or semiconductor device.

ボールはそれ自身の重みで表面に接し、従って接触した
構造は加熱が無視でき、機械的歪は最小になる。電極ま
たはボンドは典型的な場合、合金により形成され、それ
は小さなボールの上にあり、温度が下がるとともにボン
ディング操作中、デバイス表面に伝えられる熱の量は小
さくなる。合金は短時間、たとえば工ないし２秒で固化
する。従って、デバイス表面領域はわずかな熱的変動を
受けるだけである。要するに、ボンディング低歪プロセ
スである。このことは、それが電極材料および電極領域
内のデバイス中の不純物の拡散を最小にし、局所的な材
料特性を変更させない亀 からである。このことは、電極形成により導入される損
傷に、きわめて敏感なＩｎＰ　ショットキー障壁ダイオ
ード構造で示された。The ball contacts the surface under its own weight, so that the structures in contact experience negligible heating and minimal mechanical strain. The electrodes or bonds are typically formed of an alloy, which rests on a small ball, which reduces the amount of heat transferred to the device surface during the bonding operation as the temperature decreases. The alloy solidifies in a short period of time, for example 1 to 2 seconds. Therefore, the device surface area experiences only small thermal fluctuations. In short, it is a low distortion bonding process. This is because it minimizes the diffusion of impurities in the electrode material and the device within the electrode region and does not alter the local material properties. This has been demonstrated in InP Schottky barrier diode structures, which are extremely sensitive to damage introduced by electrode formation.

ボンドの大きさは、基本的にはワイヤの大きさと炎によ
り形成されるボールにより制限される。容易に得られる
最小ボンド寸法はワイヤの直径となる。ボールの大きさ
を支配すると考えられるパラメータとしては、ワイヤの
直径、炎に露出されるワイヤの長さ、すなわち溶融され
る材料の量がある。最小のボールの大きさは、はぼワイ
ヤの直径である。事実、実際の電極面積は、ボールの直
径より幾分水さい。ワイヤの直径の約６ないし８倍の最
大ボール径が形成できる。加熱されるワイヤの直径は厳
密でなくてよく、本質的に任意の大きさのワイヤを用い
ることができる。ただし、それらがデバイス構造の条件
、ガイド構造および炎の能力と矛盾しなければである。The size of the bond is primarily limited by the size of the wire and the ball formed by the flame. The smallest readily available bond dimension will be the diameter of the wire. Parameters that are believed to govern the size of the ball include the diameter of the wire, the length of the wire exposed to the flame, and thus the amount of material melted. The smallest ball size is the diameter of the bow wire. In fact, the actual electrode area is somewhat smaller than the diameter of the ball. A maximum ball diameter of about 6 to 8 times the diameter of the wire can be formed. The diameter of the wire to be heated need not be critical; wires of essentially any size can be used. provided that they are consistent with the requirements of the device construction, guide structure and flame capabilities.

言いかえれば、ボンドの所望の大きさは、適当なワイヤ
の大きさを決めるパラメータの一つである。たとえば、
約６０ないし８０μｍの大きさをもつ電極パッドおよび
デバイスは、この方法で容易に接触を柁るこンがで六ス
−もし必要ならば、より小さい電極を作ってもよい。更
にもし、なお大きな電極面積または平坦な電極表面が必
要ならば、ボールは機械的な手段により変形させてもよ
い。変形はボールをワイヤガイドチップを有する適当な
非ボンディング表面におさえつけることにより行なって
もよい。この工程は、金属合金材料を接触させる前また
は後に行なえばよい。In other words, the desired size of the bond is one of the parameters that determines the appropriate wire size. for example,
Electrode pads and devices having a size of about 60 to 80 μm can be easily contacted in this manner, although smaller electrodes may be made if necessary. Furthermore, if still larger electrode areas or flat electrode surfaces are required, the balls may be deformed by mechanical means. Deformation may be accomplished by holding the ball against a suitable non-bonding surface with a wire guide tip. This step may be performed before or after contacting the metal alloy material.

ボンディングのための位置合わせは、ガイド装置で容易
に制御でき、従ってガイドの機械的な精度および操作す
る人または機械の能力の一方または両方により制限され
る。もちろん、この工程は自動化できる。操作する人の
能力に関する限界は、この方法に特有の限界ではなく、
標準的なワイヤボンディング装置の操作に存在する限界
と同様であることが当業者には認識されるであろう。ボ
ンドの実際の位置は、ボール径の一部分の大きさまで制
御できる。Alignment for bonding can be easily controlled with guide devices and is therefore limited by the mechanical precision of the guide and/or by the capabilities of the operator or machine. Of course, this process can be automated. The limitations regarding the operator's ability are not inherent to the method;
Those skilled in the art will recognize that the limitations are similar to those that exist in the operation of standard wire bonding equipment. The actual position of the bond can be controlled down to a fraction of the ball diameter.

電極特性の再現性は、炎に露出される所望のワイヤの長
さ、すなわちボールの大きさ、ボールが拾い上げる金属
合金の量および合金化したボールの配置の精度と矛盾が
ないようにすることによって制限される。実際、露出さ
れるワイヤの長さは精密に制御され、ボールの寸法も同
様に制御できる。拾い上げられる合金の量は、金属プレ
フォームまたは溶融金属または合金槽を用いることによ
り、正確に制御することができる。The reproducibility of the electrode properties is determined by ensuring that the desired length of wire exposed to the flame is consistent with the size of the ball, the amount of metal alloy that the ball picks up and the accuracy of the placement of the alloyed ball. limited. In fact, the length of exposed wire can be precisely controlled, as can the dimensions of the ball. The amount of alloy picked up can be precisely controlled by using metal preforms or molten metal or alloy baths.

電極は各種の表面上に形成できる。たとえば、電極は露
出された半導体または金属化した表面上に形成できる。Electrodes can be formed on a variety of surfaces. For example, electrodes can be formed on exposed semiconductor or metallized surfaces.

■＝■族半導体の中から選択された化合物半導体には、
この方法で電極を作ってもよい。本発明の方法により製
作された電極の電気的および物理的特性の質は、合金化
した金属と電極にした材料との相互作用によって決る。■= Compound semiconductors selected from group semiconductors include:
Electrodes may also be made using this method. The quality of the electrical and physical properties of the electrodes made by the method of the invention is determined by the interaction of the alloyed metal with the material made into the electrode.

各種の半導体および電極金属用に存在する適当な合金系
は、当業者には周知であり、従ってボンディングできる
材料に対する本質的な制限はない。事実、合金は電極形
成する表面の熱膨張係数と同様の熱膨張係数のような、
いくつかの特性をもつように選択される。各種の合金系
を用いることにより、電極合金と電極を形成する材料、
たとえば半導体または半導体金属部との間の熱膨張係数
を合わせることができ、一方１合金の組成はボンディン
グ温度を最小にし、従ってデバイス構造中の歪を最小に
するように選択される。Suitable alloy systems that exist for various semiconductor and electrode metals are well known to those skilled in the art, so there is no inherent limit to the materials that can be bonded. In fact, the alloy has a coefficient of thermal expansion similar to that of the surface that forms the electrode.
selected to have certain characteristics. By using various alloy systems, electrode alloys and materials that form electrodes,
For example, the coefficient of thermal expansion between the semiconductor or the semiconductor metal parts can be matched, while the composition of one alloy is selected to minimize bonding temperatures and thus minimize distortion in the device structure.

ボンドの強度は半導体／合金、または金属／合金相互作
用の質に依存する。本方法により作成したボンドの機械
的強度は、直径２５μｍの金線を用いた場合、７グラム
以上の力または直径５０μｍの金線を用いた場合、１２
ダラム以上の力で持ち上げることが十分できるほどであ
る。The strength of the bond depends on the quality of the semiconductor/alloy or metal/alloy interaction. The mechanical strength of the bond created by this method is 7 grams or more when using a gold wire with a diameter of 25 μm or 12 grams when using a gold wire with a diameter of 50 μm.
It is enough to lift it with more force than Duram.

二つの基本的な機構により、ボンディング　Ｉの破損の
生じることがａ察された。第１は、ワイヤとボールの接
合またはワイヤの主要部分、すなわち引き延ばされる部
分、および第　２は表面領域にボンディングした合金か
らの電極用ボール材料の分離である。固着性は電極用合
金と電極用材料の、化学−機械的相互作用により影響さ
れる。ボンドの形成を、電極形成プロセス中フラックス
を用いることにより促進してもよい。フラックスは固体
、液体または気体でよい。フラックスは電極用合金の拾
い上げと、電極形成の間の工程またはワイヤの加熱と電
極合金拾い上げの間の工程の一方または両方で用いても
よい。It was hypothesized that bonding I could fail due to two basic mechanisms. The first is the bonding of the wire to the ball or the main part of the wire, ie the part that is stretched, and the second is the separation of the electrode ball material from the alloy bonded to the surface area. Adhesion is influenced by the chemical-mechanical interaction between the electrode alloy and the electrode material. Bond formation may be facilitated by the use of flux during the electrode formation process. Fluxes can be solid, liquid or gaseous. The flux may be used in one or both of the steps between picking up the electrode alloy and forming the electrode or heating the wire and picking up the electrode alloy.

本方法では、多くの材料を用いてよいことが容易に認識
されよう。熱圧着または超音波ボンディング技術により
、現在ボンディングが行なわれている任意の金属材料に
、本技術でボンディングを形成することができる。It will be readily appreciated that many materials may be used in this method. Bonds can be formed with this technique in any metal material that is currently bonded by thermocompression or ultrasonic bonding techniques.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はボールを形成するために、ワイヤを加熱した後
のワイヤボンド装置の断面図、第２図は本発明に従って
作成されたボンドの断面図である。 ［主要部分の符号の説明］FIG. 1 is a cross-sectional view of a wire bonding apparatus after heating the wire to form a ball, and FIG. 2 is a cross-sectional view of a bond made in accordance with the present invention. [Explanation of symbols of main parts]

Claims (1)

【特許請求の範囲】 １、半導体デバイスへの電気的接触を作成することを含
む半導体デバイスの製作方法において、 ガイドにより位置決めされたワイヤの端部に電極材料を
供給し、前記電極材料はその融点付近の温度にあり、 前記電極材料を、所定の電極点に接触させることを特徴
とする半導体デバイスの製作方法。 ２、特許請求の範囲第１項に記載された方法において。 前記電極材料を供給する前に、前記ワイヤの端部上に、
前記ワイヤ金属を含むボールを形成することを特徴とす
る半導体デバイスの製作方法。 ３、特許請求の範囲第２項に記載された方法において、 前記形成工程は、前記ワイヤを溶融させるのに充分な温
度に加熱することで行なわれることを特徴とする半導体
デバイスの製作方法。 ４、特許請求の範囲第３項に記載された方法において、 前記加熱工程は、トーチに露出することによることを特
徴とする半導体デバイスの製作方法。 ５、特許請求の範囲第１〜４項のいずれか１項に記載さ
れた方法において、 前記電極材料は、少なくとも一つの電極用金属を含むこ
とを特徴とする半導体デバイスの製作方法。 ６、特許請求の範囲第５項に記載された方法において、 前記ワイヤの端一部にフラックスを加えることを特徴と
する半導体デバイスの製作方法。 ７、特許請求の範囲第１〜６項のいずれか１項に記載さ
れた方法において、 前記電極点は、金属化した層を含むことを特徴とする半
導体デバイスの製作方法。 ８、特許請求の範囲第８項に記載された方法において、 前記電極点は、更に前記金属化層下の半導体材料を含む
ことを特徴とする半導体デバイスの製作方法。 ９、特許請求の範囲第１〜６項のいすか１項に記載され
た方法において、 前記電極点は、半導体を含むことを特徴とする半導体デ
バイスの製作方法。 １０、特許請求の範囲第８項または第９項に記載された
方法において、 前記半導体は■族、■−■族および１ｌ−Ｖｌ族化合物
半導体から成るグループから選択されることを特徴とす
る半導体デバイスの製作方法。 １１、特許請求の範囲第５〜１０項のいずれか１項に記
載された方法において、 前記電極用金属供給工程は、溶融槽に接触することによ
ることを特徴する半導体デバイスの製作方法。 １２、特許請求の範囲第１〜１１項のいずれか１項に記
載された方法において、 該ワイヤは、該電極用材料の融点以上の温度にあること
を特徴とする半導体デバイスの製作方法。[Claims] 1. A method of fabricating a semiconductor device comprising making an electrical contact to the semiconductor device, the method comprising: providing an electrode material to an end of a wire positioned by a guide, the electrode material having a melting point thereof; A method for manufacturing a semiconductor device, characterized in that the electrode material is brought into contact with a predetermined electrode point at a temperature in the vicinity of that temperature. 2. In the method described in claim 1. on the end of the wire before applying the electrode material;
A method for manufacturing a semiconductor device, comprising forming a ball containing the wire metal. 3. The method according to claim 2, wherein the forming step is performed by heating the wire to a temperature sufficient to melt the wire. 4. The method of manufacturing a semiconductor device according to claim 3, wherein the heating step is performed by exposing the semiconductor device to a torch. 5. The method according to any one of claims 1 to 4, wherein the electrode material includes at least one electrode metal. 6. A method for manufacturing a semiconductor device according to claim 5, characterized in that flux is applied to a portion of the end of the wire. 7. A method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the electrode points include a metalized layer. 8. The method of claim 8, wherein the electrode points further include semiconductor material below the metallization layer. 9. The method according to claim 1 of claims 1 to 6, wherein the electrode points include a semiconductor. 10. The method according to claim 8 or 9, wherein the semiconductor is selected from the group consisting of group III, group III-III, and group II-Vl compound semiconductors. How to make the device. 11. The method of manufacturing a semiconductor device according to any one of claims 5 to 10, wherein the step of supplying metal for an electrode is carried out by contacting a melting tank. 12. A method for manufacturing a semiconductor device according to any one of claims 1 to 11, wherein the wire is at a temperature equal to or higher than the melting point of the electrode material.
JP59266538A 1983-12-19 1984-12-19 Method of producing semiconductor device Pending JPS60154537A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56316883A 1983-12-19 1983-12-19
US563168 1983-12-19

Publications (1)

Publication Number Publication Date
JPS60154537A true JPS60154537A (en) 1985-08-14

Family

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JP59266538A Pending JPS60154537A (en) 1983-12-19 1984-12-19 Method of producing semiconductor device

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Country Link
JP (1) JPS60154537A (en)
KR (1) KR850005137A (en)
CA (1) CA1220877A (en)
GB (1) GB2151529B (en)
IL (1) IL73844A0 (en)
SG (1) SG16088G (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189507A (en) * 1986-12-17 1993-02-23 Raychem Corporation Interconnection of electronic components
US4955523A (en) * 1986-12-17 1990-09-11 Raychem Corporation Interconnection of electronic components
US4948030A (en) * 1989-01-30 1990-08-14 Motorola, Inc. Bond connection for components
US5683255A (en) * 1993-12-03 1997-11-04 Menze; Marion John Radio frequency connector assembly
US5455390A (en) * 1994-02-01 1995-10-03 Tessera, Inc. Microelectronics unit mounting with multiple lead bonding
US5830782A (en) * 1994-07-07 1998-11-03 Tessera, Inc. Microelectronic element bonding with deformation of leads in rows
US6429112B1 (en) 1994-07-07 2002-08-06 Tessera, Inc. Multi-layer substrates and fabrication processes
US5518964A (en) 1994-07-07 1996-05-21 Tessera, Inc. Microelectronic mounting with multiple lead deformation and bonding
US6828668B2 (en) 1994-07-07 2004-12-07 Tessera, Inc. Flexible lead structures and methods of making same
US6117694A (en) * 1994-07-07 2000-09-12 Tessera, Inc. Flexible lead structures and methods of making same
US5688716A (en) 1994-07-07 1997-11-18 Tessera, Inc. Fan-out semiconductor chip assembly
US5798286A (en) 1995-09-22 1998-08-25 Tessera, Inc. Connecting multiple microelectronic elements with lead deformation
US6361959B1 (en) 1994-07-07 2002-03-26 Tessera, Inc. Microelectronic unit forming methods and materials
US6133072A (en) 1996-12-13 2000-10-17 Tessera, Inc. Microelectronic connector with planar elastomer sockets
US20060186179A1 (en) * 2005-02-23 2006-08-24 Levine Lee R Apparatus and method for bonding wires

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL112296C (en) * 1955-05-23
GB1434833A (en) * 1972-06-02 1976-05-05 Siemens Ag Solder carrying electrical connector wires

Also Published As

Publication number Publication date
IL73844A0 (en) 1985-03-31
GB2151529A (en) 1985-07-24
SG16088G (en) 1988-07-08
GB8431490D0 (en) 1985-01-23
KR850005137A (en) 1985-08-21
GB2151529B (en) 1987-09-30
CA1220877A (en) 1987-04-21

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