KR850005137A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

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Publication number
KR850005137A
KR850005137A KR1019840008065A KR840008065A KR850005137A KR 850005137 A KR850005137 A KR 850005137A KR 1019840008065 A KR1019840008065 A KR 1019840008065A KR 840008065 A KR840008065 A KR 840008065A KR 850005137 A KR850005137 A KR 850005137A
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South Korea
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contact
semiconductor device
line
contact material
semiconductor
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KR1019840008065A
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Korean (ko)
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번랑 데이비드 (외 2)
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오레그 이. 앨버
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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Publication of KR850005137A publication Critical patent/KR850005137A/en

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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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Abstract

내용 없음No content

Description

반도체소자 제조방법Semiconductor device manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 와이어가 가열되어 볼이 형성된 후에 있어서, 와이어 본드장치의 부분도.1 is a partial view of a wire bond device after the wire is heated to form a ball.

제2도는 본 발명에 따른 본드의 부분도.2 is a partial view of a bond according to the invention.

도면부호에 대한 설명Explanation of Drawings

1:가이드장치, 3:와이어, 5:볼, 7:합금영역1: guide device, 3: wire, 5: ball, 7: alloy zone

Claims (12)

반도체소자에 전기적 접촉형성을 포함하는 반도체소자 제조방법에 있어서, 접촉물질의 용융온도 가까이에서 안내부에 의해 위치된 선의 단부에 상기 접촉물질을 제공하는 단계와, 소정의 접촉점에서 상기 접촉물질이 접촉되는 단계로 이루어진 것을 특징으로 하는 반도체 소자 제조방법.A method of manufacturing a semiconductor device comprising electrical contact formation with a semiconductor device, the method comprising: providing the contact material at an end of a line positioned by a guide near a melting temperature of the contact material, wherein the contact material contacts at a predetermined contact point; Method of manufacturing a semiconductor device, characterized in that consisting of steps. 제1항에 따른 방법에 있어서, 상기 접촉물질을 제공하기 이전에 상기 선의 단부상에서 상기 선물질을 포함하는 볼을 형성하는 단계로 이루어진 것을 특징으로 하는 반도체 소자 제조방법.A method according to claim 1, comprising the step of forming a ball comprising said gift on the end of said line prior to providing said contact material. 제2항에 따르는 방법에 있어서, 상기 형성이 상기 선을 녹이기에 충분한 온도로 가열되어 이루어지는 것을 특징으로 하는 반도체소자 제조방법.A method according to claim 2, wherein the formation is heated to a temperature sufficient to melt the line. 제3항에 따르는 방법에 있어서, 상기 가열이 토치에 노출되어 이루어지는 것을 특징으로 하는 반도체소자 제조방법.The method according to claim 3, wherein the heating is performed by exposing the torch. 선행의 1 내지 4항에 따르는 방법에 있어서, 상기 접촉물질이 최소한 하나의 접촉금속을 포함하는 것을 특징으로 하는 반도체소자 제조방법.The method according to the preceding claims 1 to 4, wherein the contact material comprises at least one contact metal. 제5항에 따르는 방법에 있어서, 상기 선의 단부에 용제를 부가하는 단계로 이루어진 것을 특징으로 하는 반도체소자 제조방법.A method according to claim 5, further comprising the step of adding a solvent to an end of the line. 선행의 1 내지 5항에 따르는 방법에 있어서, 상기 접촉점이 금속화층을 포함하는 것을 특징으로 하는 반도체소자 제조방법.The method according to the preceding 1 to 5, wherein the contact point comprises a metallization layer. 제7항에 따르는 방법에 있어서, 상기 접촉점이 상기 금속화층 밑에서 반도체물질를 포함하는 것을 특징으로 하는 반도체소자 제조방법.A method according to claim 7, wherein the contact point comprises a semiconductor material under the metallization layer. 선행의 1 내지 6항에 따르는 방법에 있어서, 상기 접촉점이 반도체를 포함하는 것을 특징으로 하는 반도체소자 제조방법.The method according to the preceding claims 1 to 6, wherein the contact point comprises a semiconductor. 제8 혹은 9항에 따르는 방법에 있어서, 상기 반도체가 4족과 3-5족과 2-6족의 합성 반도체 그룹에서 선택된 것을 특징으로 하는 반도체 소자 제조방법.The method according to claim 8 or 9, wherein the semiconductor is selected from a group of synthetic semiconductors of Groups 4, 3-5 and 2-6. 선행의 5 내지 10항에 따르는 방법에 있어서, 상기 접촉금속제공단계가 용탕에서 이루어지는 것을 특징으로 하는 반도체소자 제조방법.The method according to the preceding claims 5 to 10, wherein the contact metal providing step is performed in a molten metal. 선행의 1 내지 11항에 따르는 방법에 있어서, 상기 선이 접촉물질의 용융점이상의 온도에 있는 것을 특징으로 하는 반도체소자 제조방법.A method according to the preceding claims 1 to 11, wherein the line is at a temperature above the melting point of the contact material. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019840008065A 1983-12-19 1984-12-18 Semiconductor device manufacturing method KR850005137A (en)

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