JP2929764B2 - Semiconductor device - Google Patents

Abstract

PURPOSE:To make it possible to obtain an electric power supply capacity by bonding a projection type electrode around a semiconductor chip with an outside lead by a thermal contact bonding process and metallically connecting a projection type electrode inside a chip with the outside lead wire by thermal melting process. CONSTITUTION:There is installed a projection type electrode 3 by a first metal installed on a pad around a chip on a first insulation film 2 formed to pull out a signal or the like from an integrated circuit, formed on a semiconductor substrate 1. An electrode pad 7 installed inside the chip connected with a lower part wiring by way of a through hole 6 on a second insulation film 5 and a sphere formed on the tip of a metal-gage wire made of a low temperature molten metal are contact-bonded with the above electrode pad 7 so as to form a second projection type electrode 10. In such a semiconductor device, the projection type electrode 3 on the electrode pad on the peripheral electrode pad and an outside lead wire 8 are bonded by means of a thermal contact bonding process so that the projection type electrode 10 inside the chip is metallically connected with the outside lead wires by means of a thermal melting process.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor chip package, and more particularly to a TAB (Tape Automate).
d Bonding).

[0002]

2. Description of the Related Art A conventional TAB package has a structure as shown in FIG. For example, a sprocket hole 25 is provided as a guide for feeding a tape on a resin film such as polyimide, and a device hole is provided in a central portion of the tape so that a semiconductor chip can be mounted thereon. TAB to connect
A lead 27 is provided. In this TAB lead 27,
Pads 26 are provided on the film so that the chips can be electrically selected.

[0003] In this way, the leads are covered with plating of gold or tin. A protruding electrode 28 is formed with gold or the like on a pad of a semiconductor chip at a position corresponding to the tip of such a lead, and is usually formed by a process called inner lead bonding (ILB) and bonding.
The bump and the lead are bonded by thermocompression bonding. When viewed from the side, the shape is as shown in FIG.

[0004]

In such a semiconductor package, there is no problem with a small package having a small number of pins and a small number of pins. There was a drawback that power could not be supplied sufficiently.

At present, in a bipolar ECL device,
For example, a power of 50 W to 100 W has become practical, and how to supply power to the IC chip has become indispensable for achieving high speed.

An object of the present invention is to provide a semiconductor device capable of obtaining a sufficient power supply capability.

[0007]

SUMMARY OF THE INVENTION It is an object of the TAB package of the present invention to make connection to the inside of a chip, which is very difficult to connect with a single TAB tape, using a melting alloy such as solder. In this case, a ball-shaped portion is provided at the tip of the thin metal wire using a wire bonding apparatus inside, and the ball-shaped portion is adhered to a bonding pad provided inside the chip, leaving only the ball portion. A wiring pattern on another base film intended for power supply to the inside is melt-connected to the remaining ball by heat to provide sufficient power supply capability.

[0008]

Next, the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of each step relating to a method for manufacturing a TAB package for a semiconductor according to one embodiment of the present invention. FIG.
(A) shows a semiconductor chip on which TAB bumps are formed. An electrode pad is provided around the surface of a semiconductor chip 1 with an insulating film 2 interposed therebetween, and a protruding electrode 3 such as gold is formed thereon. At this time, it is usual to form Ti-Pd, Ti-Au, etc. under the bumps as a barrier metal and an adhesive metal layer. A second wiring 4 is provided inside the chip, for example, through an insulating film 5 such as a silicon oxide film, a silicon nitride film, a silicon polyimide film or the like, and a part thereof is provided with a through hole 6 to become an inner electrode pad 7. A metal layer is formed.

The TAB leads 8 are connected to the surrounding bumps by thermocompression bonding to the semiconductor chip thus formed. At this time, the TAB lead is usually plated with gold or tin, and the condition of ILB is performed by pressing at a temperature of about 400 ° C. for about 1 second.

Next, similarly to the wire bonder, a metal-melted ball such as solder is left on the inner pad. At this time, when the pad is made of Al, it is necessary to provide a metal layer such as Ag between the pads (FIG. 1C).

[0011] Next, with respect to the protruding portion of the solder ball left in this way, a lead pattern formed on a TAB base film different from that described above is heated to melt the solder ball. FIG. 1D shows the connection. As shown in FIG. 2, the solder bow 20 is formed on the first TAB tape, and the second tape 23 and the first tape are connected to each other so that electrical conduction can be achieved.

At this time, since the wiring layer can be made of copper having a thickness of 35 μm, it is effective because it has a sufficient power supply effect.

Although the above is a method using two kinds of polyimide films, a method of connecting solder balls with another silicon chip as another embodiment is also possible.

[0014]

As described above, according to the present invention, if bumps are provided on an internal pattern like a normal TAB inside a chip, ILB cannot be performed unless pressure is applied to break active elements. Has the advantage that a sufficient power supply capability can be obtained without breaking the device because the connection is made by melting with solder. When a polyimide film is coated on the chip surface, the polyimide base film has an effect of preventing α rays.

The solder is usually 64 tinned tin solder, but other alloys such as indium and lead can be used.

[Brief description of the drawings]

FIG. 1 is a sectional view of each step of a method for manufacturing a TAB package structure according to the present invention.

FIG. 2 is a sectional view showing one embodiment of the present invention.

FIG. 3 is a cross-sectional view of a conventional TAB package.

[Explanation of symbols]

1,13,28 semiconductor substrate 2,14,5,16 insulating film 3,15,29 bump 8,17,31 TAB leads 10,19,20 solder balls 7,4,18, 12, 22 wiring layer

Claims (1)

(57) [Claims] 1. A protruding electrode made of a first metal provided on a pad around a chip on a first insulating film formed for extracting a signal or the like to the outside from an integrated circuit formed on a semiconductor substrate. A sphere formed at the tip of a thin metal wire made of a low-temperature molten metal on an electrode pad provided on the inside of a chip connected to a lower wiring via a through hole on a second insulating film; Is adhered to the electrode pad to form a second
In the semiconductor device in which the protruding electrodes are formed, the protruding electrodes on the peripheral electrode pads and the external leads are bonded by thermocompression bonding, and the protruding electrodes and the external leads inside the chip are metal-connected by thermal melting. A semiconductor device characterized by the above-mentioned.