JPH06132446A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPH06132446A JPH06132446A JP4276956A JP27695692A JPH06132446A JP H06132446 A JPH06132446 A JP H06132446A JP 4276956 A JP4276956 A JP 4276956A JP 27695692 A JP27695692 A JP 27695692A JP H06132446 A JPH06132446 A JP H06132446A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- molding die
- metal mold
- semiconductor package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、樹脂封止型半導体パッ
ケージで用いられるリードフレームに関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame used in a resin-sealed semiconductor package.
【０００２】[0002]
【従来の技術】従来のリードフレームとしては、その材
料としてＦｅ、Ｆｅ−Ｎｉ合金、Ｃｕ系合金等が使用さ
れ、半導体チップを固着するためのダイパッドと、半導
体チップのボンディングパッドと接続するためのインナ
ーリードと、アウターリードとが形成されているものが
知られている。2. Description of the Related Art As a conventional lead frame, Fe, Fe--Ni alloy, Cu alloy or the like is used as its material, and it is used for connecting a die pad for fixing a semiconductor chip and a bonding pad of the semiconductor chip. It is known that an inner lead and an outer lead are formed.
【０００３】以下、上記従来のリードフレームを用いた
樹脂封止型半導体パッケージの組立方法を説明する。A method of assembling a resin-sealed semiconductor package using the above-mentioned conventional lead frame will be described below.
【０００４】まず、半導体チップをリードフレームのダ
イパッドに固着させ、次に、半導体チップのボンディン
グパッドとリードフレームのインナーリードとをワイヤ
ーボンディング法により接続する。First, the semiconductor chip is fixed to the die pad of the lead frame, and then the bonding pad of the semiconductor chip and the inner lead of the lead frame are connected by the wire bonding method.
【０００５】以上の工程を完了したリードフレームを、
１６０℃〜１９０℃に加熱された樹脂成型用金型に装着
し、該樹脂成形用金型の樹脂注入口（以下ゲートと呼
ぶ）から加熱溶融した樹脂を該樹脂成形用金型の内部に
注入する。樹脂成形用金型は、ゲートと、湯道部（以下
ランナーと呼ぶ）と、所望のパッケージ外形に成形する
ための内部空間であるキャビティーと、該キャビティー
の空気を放出するためのベントとを備えている。The lead frame that has undergone the above steps is
The resin is mounted on a resin molding die heated to 160 ° C. to 190 ° C., and the heat-melted resin is injected into the resin molding die from a resin injection port (hereinafter referred to as a gate) of the resin molding die. To do. The resin molding die includes a gate, a runner portion (hereinafter referred to as a runner), a cavity that is an internal space for molding into a desired package outer shape, and a vent for discharging air from the cavity. Is equipped with.
【０００６】樹脂は、樹脂成形用金型のキャビティーに
セットされた半導体チップと、リードフレームのインナ
ーリードと、該インナーリードと半導体チップのボンデ
ィングパッドとを接続している金属ワイヤーとを包み込
むように注入されていく。The resin encloses the semiconductor chip set in the cavity of the resin molding die, the inner lead of the lead frame, and the metal wire connecting the inner lead and the bonding pad of the semiconductor chip. Will be injected into.
【０００７】この樹脂の注入が完了した後、そのままの
状態で３０秒〜１２０秒程度維持し樹脂を一次硬化させ
る。After the injection of the resin is completed, the resin is primarily cured by maintaining the same state for about 30 seconds to 120 seconds.
【０００８】さらに、炉内で樹脂が持つガラス転位温度
以上の温度で５〜１０時間加熱することにより樹脂の最
終硬化を行い、半導体チップ及びリードフレームの樹脂
中への封止が完了する。Further, the resin is finally cured by heating in the furnace at a temperature higher than the glass transition temperature of the resin for 5 to 10 hours, and the sealing of the semiconductor chip and the lead frame in the resin is completed.
【０００９】次に、硬化した樹脂部分の外側に位置する
リードフレームのアウターリードに５〜１０μｍ程度の
メッキを施し、アウターリードのフォーミング加工を行
い、機能確認を行った後、パッケージ上面部に製品を判
別するためのマーキングをする。Next, the outer leads of the lead frame located outside the cured resin portion are plated with a thickness of about 5 to 10 μm, the outer leads are formed, the functions are confirmed, and then the product is placed on the upper surface of the package. Mark to identify
【００１０】[0010]
【発明が解決しようとする課題】ところで、樹脂封止型
半導体パッケージの薄型、小型化が進むなかでリードフ
レーム材も薄くなり、樹脂材料も様々に品種改良が行わ
れてきた。By the way, as the resin-encapsulated semiconductor package has become thinner and smaller, the lead frame material has become thinner and various resin materials have been improved.
【００１１】ところが、樹脂封止型半導体パッケージの
組立工程における樹脂封止時に、樹脂成形用金型のベン
トだけでは該樹脂成形用金型のキャビティーの気体を外
部に放出しきれないため、樹脂封止型半導体パッケージ
のパッケージ本体内に気泡（以下ボイドと呼ぶ）が生
じ、パッケージクラックやワイヤーの断線等を引き起こ
すという問題がある。However, at the time of resin encapsulation in the process of assembling the resin-encapsulated semiconductor package, the gas in the cavity of the resin-molding die cannot be exhausted to the outside only by the vent of the resin-molding die. There is a problem that air bubbles (hereinafter referred to as voids) are generated in the package body of the sealed semiconductor package, causing package cracks, wire breakage, and the like.
【００１２】本発明は上記に鑑みなされたものであっ
て、樹脂封止型半導体パッケージのパッケージ本体内に
おけるボイドの発生を抑止することができるリードフレ
ームを提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a lead frame capable of suppressing the occurrence of voids in the package body of a resin-sealed semiconductor package.
【００１３】[0013]
【課題を解決するための手段】上記の目的を達成するた
め、請求項１の発明は、樹脂封止型半導体パッケージの
組立工程における樹脂封止時に樹脂成形用金型と接する
部位に切除部を形成することによって、該切除部から上
記該樹脂成形用金型内の気体を外部に放出するものであ
る。In order to achieve the above object, the invention of claim 1 has a cutout portion at a portion contacting with a resin molding die during resin sealing in an assembly process of a resin sealed semiconductor package. By forming the gas, the gas in the resin molding die is released to the outside from the cut portion.
【００１４】具体的に請求項１の発明が講じた解決手段
は、樹脂封止型半導体パッケージを成形するために樹脂
成形用金型に装着され該樹脂成形用金型内に注入される
樹脂により封止されるリードフレームを対象とし、樹脂
封止時に上記樹脂成形用金型と接する部位に、該樹脂成
形用金型内の気体を外部に放出させる切除部が形成され
ている構成とするものである。Specifically, the means for solving the problems according to the invention of claim 1 is to use a resin which is mounted in a resin molding die for molding a resin-sealed semiconductor package and is injected into the resin molding die. A lead frame to be sealed is intended, and a cutout portion for discharging the gas in the resin molding die to the outside is formed at a portion in contact with the resin molding die during resin sealing. Is.
【００１５】また、請求項２の発明は、樹脂封止型半導
体パッケージの組立工程における樹脂封止時に樹脂成形
用金型と接する部位に凹状溝を形成することにより、該
凹状溝から上記該樹脂成形用金型内の気体を外部に放出
するものである。According to a second aspect of the present invention, a recessed groove is formed in a portion which comes into contact with the resin molding die during resin sealing in the process of assembling the resin-sealed semiconductor package. The gas in the molding die is released to the outside.
【００１６】具体的に請求項２の発明が講じた解決手段
は、樹脂封止型半導体パッケージを成形するために樹脂
成形用金型に装着され該樹脂成形用金型内に注入される
樹脂により封止されるリードフレームを対象とし、樹脂
封止時に上記樹脂成形用金型と接する部位に、該樹脂成
形用金型内の気体を外部に放出させる凹状溝が形成され
ている構成とするものである。Specifically, the means for solving the problems according to the second aspect of the invention is to use a resin which is mounted in a resin molding die and is injected into the resin molding die for molding a resin-sealed semiconductor package. A lead frame to be sealed is intended, and a concave groove for discharging gas in the resin molding die to the outside is formed at a portion contacting the resin molding die during resin sealing. Is.
【００１７】[0017]
【作用】請求項１の発明の構成により、樹脂封止型半導
体パッケージの組立工程における樹脂封止時において、
リードフレームの切除部から樹脂成形用金型のベントだ
けでは放出しきれなかった該樹脂成形用金型内の気体を
外部に放出することができる。このため、樹脂封止型半
導体パッケージのパッケージ本体内におけるボイドの発
生を抑止することができる。According to the structure of the invention of claim 1, during resin encapsulation in the process of assembling the resin-encapsulated semiconductor package,
It is possible to discharge the gas in the resin molding die, which could not be exhausted only by the vent of the resin molding die, from the cutout portion of the lead frame to the outside. Therefore, it is possible to prevent the occurrence of voids in the package body of the resin-sealed semiconductor package.
【００１８】また、請求項２の発明の構成により、同様
に、樹脂封止型半導体パッケージの組立工程における樹
脂封止時にリードフレームの凹状溝から樹脂成形用金型
内の気体を外部に放出することができるため、樹脂封止
型半導体パッケージのパッケージ本体内におけるボイド
の発生を抑止することができる。Further, according to the second aspect of the present invention, similarly, the gas in the resin molding die is discharged to the outside from the recessed groove of the lead frame during resin sealing in the process of assembling the resin-sealed semiconductor package. Therefore, it is possible to suppress the occurrence of voids in the package body of the resin-sealed semiconductor package.
【００１９】[0019]
【実施例】以下、本発明の一実施例を図面に基づいて説
明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００２０】初めに、上記実施例に係るリードフレーム
の構成を図面に基づいて説明する。First, the structure of the lead frame according to the above embodiment will be described with reference to the drawings.
【００２１】図１は上記実施例に係るリードフレーム１
０を示すものであり、同図において、リードフレーム１
０は、Ｆｅ−Ｎｉ合金またはＣｕ合金により作られてお
り、フレーム部１１と、該フレーム部１１に形成された
切除部１２と、半導体チップを固着するためのダイパッ
ド１３と、半導体チップのボンディングパッドと接続す
るためのインナーリード１４と、アウターリード１５と
を備えている。FIG. 1 is a lead frame 1 according to the above embodiment.
0, and in the figure, the lead frame 1
0 is made of Fe-Ni alloy or Cu alloy, and has a frame portion 11, a cutout portion 12 formed in the frame portion 11, a die pad 13 for fixing the semiconductor chip, and a bonding pad for the semiconductor chip. An inner lead 14 and an outer lead 15 for connecting to
【００２２】図２は上記リードフレーム１０を用いて組
み立てられた樹脂封止型半導体パッケージ２０を示して
おり、同図において、樹脂封止型半導体パッケージ２０
は、リードフレーム１０のダイパッド１３、インナーリ
ード１４及びアウターリード１５と、リードフレーム１
０のダイパッド１３に固着された半導体チップ２１と、
該半導体チップ２１に設けられたボンディングパッド２
２とリードフレーム１０のインナーリード１４とを接続
しているワイヤー２３と、リードフレーム１０のダイパ
ッド１３及びインナーリード１４と半導体チップ２１と
ワイヤー２３とを封止している樹脂製のパッケージ本体
２４とを備えている。FIG. 2 shows a resin-sealed semiconductor package 20 assembled using the lead frame 10. In FIG. 2, the resin-sealed semiconductor package 20 is shown.
Is the die pad 13, the inner lead 14, and the outer lead 15 of the lead frame 10, and the lead frame 1
A semiconductor chip 21 fixed to the die pad 13 of 0;
Bonding pad 2 provided on the semiconductor chip 21
2 and the inner lead 14 of the lead frame 10, a wire 23 connecting the die pad 13 and the inner lead 14 of the lead frame 10, the semiconductor chip 21 and the wire 23, and a resin package main body 24. Is equipped with.
【００２３】以下、上記樹脂封止型半導体パッケージ２
０の組立方法を説明する。Hereinafter, the resin-sealed semiconductor package 2 will be described.
The assembling method of 0 will be described.
【００２４】まず、リードフレーム１０のダイパッド１
３の表面とインナーリード１４の先端部の表側とにＡｕ
またはＡｇのメッキ２５を１．５〜３．０μｍの厚さで
施す。次に、このようにしてメッキ２５を施したリード
フレーム１０のダイパッド１３上に半導体チップ２１を
エポキシ系樹脂またはポリイミド系樹脂にＡｇの粉末を
混ぜたＡｇペースト２６により貼り付ける。その後、１
００℃〜２５０℃の温度でＡｇペースト２６を硬化させ
ダイパッド１３上に半導体チップ２１を固着させる。次
に、この半導体チップ２１上のボンディングパッド２２
とリードフレーム１０のインナーリード１４の先端部の
メッキ２５を施した部分とをＡｕまたはＣｕのワイヤー
２３により熱圧着または超音波熱圧着のワイヤーボンデ
ィング法を用いて接続する。First, the die pad 1 of the lead frame 10
Au on the surface of No. 3 and the front side of the tip of the inner lead 14.
Alternatively, Ag plating 25 is applied to a thickness of 1.5 to 3.0 μm. Next, the semiconductor chip 21 is attached to the die pad 13 of the lead frame 10 plated in this way with the Ag paste 26 in which Ag powder is mixed with epoxy resin or polyimide resin. Then 1
The Ag paste 26 is hardened at a temperature of 00 ° C. to 250 ° C. to fix the semiconductor chip 21 on the die pad 13. Next, the bonding pad 22 on the semiconductor chip 21
The end of the inner lead 14 of the lead frame 10 and the plated portion 25 are connected by a wire bonding method of thermocompression bonding or ultrasonic thermocompression bonding with a wire 23 of Au or Cu.
【００２５】そして、半導体チップ２１が固着されたリ
ードフレーム１０を樹脂成形用金型に装着して樹脂成形
を行なう。ここで、樹脂成形用金型は、従来例と同様の
ものであり、加熱溶融した樹脂の注入口であるゲート
と、湯道部であるランナーと、所望のパッケージ外形に
成形するための内部空間であるキャビティーと、該キャ
ビティーの空気を放出するためのベントとを備えてい
る。Then, the lead frame 10 to which the semiconductor chip 21 is fixed is mounted on a resin molding die to perform resin molding. Here, the resin molding die is the same as that of the conventional example, and is a gate that is an injection port of the heat-melted resin, a runner that is a runner, and an internal space for molding into a desired package outer shape. And a vent for releasing the air in the cavity.
【００２６】樹脂は、樹脂成形用金型のキャビティーに
セットされた半導体チップ２１と、リードフレーム１０
のインナーリード１４と、該インナーリード１４と半導
体チップ２１のボンディングパッド２２とを接続してい
るワイヤー２３とを包み込むように注入されていく。The resin is used for the semiconductor chip 21 set in the cavity of the resin molding die and the lead frame 10.
The inner lead 14 and the wire 23 connecting the inner lead 14 and the bonding pad 22 of the semiconductor chip 21 are injected so as to wrap.
【００２７】このとき、リードフレーム１０の切除部１
２は樹脂成形用金型と接する位置にある。このため、リ
ードフレーム１０の切除部１２は、樹脂成形用金型のキ
ャビティーと該樹脂成形用金型の外部とを連通し、樹脂
成形用金型のベントと同一の役割を果たす。即ち、リー
ドフレーム１０の切除部１２は樹脂成形用金型のキャビ
ティーの気体及び樹脂中に巻き込まれている気体を樹脂
成形用金型の外部に放出させる。At this time, the cutout portion 1 of the lead frame 10
2 is a position in contact with the resin molding die. Therefore, the cutout portion 12 of the lead frame 10 communicates the cavity of the resin molding die with the outside of the resin molding die and plays the same role as the vent of the resin molding die. That is, the cutout portion 12 of the lead frame 10 releases the gas in the cavity of the resin molding die and the gas trapped in the resin to the outside of the resin molding die.
【００２８】従って、樹脂成形用金型のベントだけでは
放出しきれなかった気体を放出することができるため、
樹脂封止型半導体パッケージ２０のパッケージ本体２４
内におけるボイドの発生を抑止することができる。Therefore, it is possible to release the gas that could not be released only by the vent of the resin molding die.
Package body 24 of resin-sealed semiconductor package 20
Generation of voids inside can be suppressed.
【００２９】その後、リードフレーム１０のアウターリ
ード１５にメッキとリードフォーミング加工とを施し、
パッケージ本体２４の表面に品番等のマーキングを行っ
て樹脂封止型半導体パッケージ２０が完成する。After that, the outer leads 15 of the lead frame 10 are plated and lead formed,
By marking the product number or the like on the surface of the package body 24, the resin-sealed semiconductor package 20 is completed.
【００３０】なお、本実施例に係るリードフレームにお
いては、切除部は１ヶ所だけ形成されているが２ヶ所以
上形成されてもよいし、切除部の位置は、リードフレー
ムを樹脂成形用金型に装着した際に該樹脂成形用金型に
接し樹脂成形用金型のキャビティーと該樹脂成形用金型
の外部とを連通することができる位置であれば何れの箇
所でもよい。In the lead frame according to this embodiment, only one cut portion is formed, but two or more cut portions may be formed. The cut portion may be formed by molding the lead frame into a resin molding die. It may be located at any position as long as it is in contact with the resin molding die and can communicate the cavity of the resin molding die with the outside of the resin molding die when mounted on the.
【００３１】また、本実施例に係るリードフレームにお
いては、フレーム部の一部を切除してベント機能をもた
せたが、部分的にフレーム厚を薄くして凹状溝を形成し
ても同様の効果が得られることは言うまでもない。Further, in the lead frame according to the present embodiment, a part of the frame portion is cut off so as to have a vent function, but the same effect can be obtained even if the frame thickness is partially reduced to form a concave groove. It goes without saying that you can get
【００３２】[0032]
【発明の効果】以上説明したように、請求項１及び請求
項２の発明に係るリードフレームによると、切除部また
は凹状溝が樹脂成形用金型のベントと同一の役割を果た
し、樹脂封止型半導体パッケージのパッケージ本体内に
おけるボイドの発生を抑止することができる。As described above, according to the lead frame of the first and second aspects of the present invention, the cutout portion or the concave groove plays the same role as the vent of the resin molding die, and the resin sealing is performed. Generation of voids in the package body of the semiconductor package can be suppressed.
【００３３】従って、樹脂封止型半導体パッケージにお
けるパッケージクラックやワイヤーの断線等を防止する
ことができる。Therefore, it is possible to prevent package cracks and wire breakages in the resin-sealed semiconductor package.
【００３４】さらに、請求項１の発明に係るリードフレ
ームによると、樹脂封止時に樹脂成形用金型に接する部
位だけでなく該部位に隣接し該樹脂成形用金型のゲート
及びランナーである樹脂注入路内に位置する部位までも
切除することにより、リードフレームと該樹脂注入路内
の樹脂との接着面積を小さくすることができるため、樹
脂封止型半導体パッケージにおけるゲート残り及びラン
ナー残りの発生を防止することができる。Further, according to the lead frame of the first aspect of the present invention, not only the portion which is in contact with the resin molding die at the time of resin sealing but also the resin which is adjacent to the portion and is the gate and runner of the resin molding die By cutting out even the part located in the injection path, the adhesive area between the lead frame and the resin in the resin injection path can be reduced, so that the gate residue and runner residue are generated in the resin-sealed semiconductor package. Can be prevented.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の一実施例に係るリードフレームを示す
平面図である。FIG. 1 is a plan view showing a lead frame according to an embodiment of the present invention.
【図２】上記リードフレームを使用して組み立てられた
樹脂封止型半導体パッケージを示す断面図である。FIG. 2 is a cross-sectional view showing a resin-sealed semiconductor package assembled using the lead frame.
１０ リードフレーム １１ フレーム部 １２ 切除部 １３ ダイパッド １４ インナーリード １５ アウターリード ２０ 樹脂封止型半導体パッケージ ２１ 半導体チップ DESCRIPTION OF SYMBOLS 10 Lead frame 11 Frame part 12 Excision part 13 Die pad 14 Inner lead 15 Outer lead 20 Resin-sealed semiconductor package 21 Semiconductor chip
Claims (2)
ために樹脂成形用金型に装着され該樹脂成形用金型内に
注入される樹脂により封止されるリードフレームであっ
て、 樹脂封止時に上記樹脂成形用金型と接する部位に、該樹
脂成形用金型内の気体を外部に放出させる切除部が形成
されていることを特徴とするリードフレーム。1. A lead frame, which is mounted on a resin molding die for molding a resin-sealed semiconductor package and is sealed by a resin injected into the resin molding die, comprising: A lead frame, characterized in that a cut-off portion for discharging gas in the resin molding die to the outside is formed at a portion which sometimes contacts the resin molding die.
ために樹脂成形用金型に装着され該樹脂成形用金型内に
注入される樹脂により封止されるリードフレームであっ
て、 樹脂封止時に上記樹脂成形用金型と接する部位に、該樹
脂成形用金型内の気体を外部に放出させる凹状溝が形成
されていることを特徴とするリードフレーム。2. A lead frame, which is mounted on a resin molding die for molding a resin-sealed semiconductor package and is sealed with a resin injected into the resin molding die, wherein A lead frame, characterized in that a recessed groove for releasing gas in the resin-molding die to the outside is formed at a portion which sometimes contacts the resin-molding die.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4276956A JPH06132446A (en) | 1992-10-15 | 1992-10-15 | Lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4276956A JPH06132446A (en) | 1992-10-15 | 1992-10-15 | Lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06132446A true JPH06132446A (en) | 1994-05-13 |
Family
ID=17576758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4276956A Withdrawn JPH06132446A (en) | 1992-10-15 | 1992-10-15 | Lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06132446A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998029903A1 (en) * | 1996-12-26 | 1998-07-09 | Hitachi, Ltd. | Resin-encapsulated semiconductor device and method for manufacturing the same |
| US6692989B2 (en) | 1999-10-20 | 2004-02-17 | Renesas Technology Corporation | Plastic molded type semiconductor device and fabrication process thereof |
-
1992
- 1992-10-15 JP JP4276956A patent/JPH06132446A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998029903A1 (en) * | 1996-12-26 | 1998-07-09 | Hitachi, Ltd. | Resin-encapsulated semiconductor device and method for manufacturing the same |
| US6558980B2 (en) | 1996-12-26 | 2003-05-06 | Yoshinori Miyaki | Plastic molded type semiconductor device and fabrication process thereof |
| US6943456B2 (en) | 1996-12-26 | 2005-09-13 | Hitachi Ulsi Systems Co., Ltd. | Plastic molded type semiconductor device and fabrication process thereof |
| US6692989B2 (en) | 1999-10-20 | 2004-02-17 | Renesas Technology Corporation | Plastic molded type semiconductor device and fabrication process thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7410834B2 (en) | Method of manufacturing a semiconductor device | |
| US6770163B1 (en) | Mold and method for encapsulation of electronic device | |
| WO1998029903A1 (en) | Resin-encapsulated semiconductor device and method for manufacturing the same | |
| US7326041B2 (en) | Lead frame, resin sealing mold and method for manufacturing a semiconductor device using the same | |
| US20010042904A1 (en) | Frame for semiconductor package | |
| JPH09199637A (en) | Resin sealing type semiconductor device and its manufacture | |
| US6979886B2 (en) | Short-prevented lead frame and method for fabricating semiconductor package with the same | |
| US7504736B2 (en) | Semiconductor packaging mold and method of manufacturing semiconductor package using the same | |
| JPH06132446A (en) | Lead frame | |
| JP2003068958A (en) | Package for discrete element and its manufacturing method | |
| US20020048851A1 (en) | Process for making a semiconductor package | |
| JPH05291459A (en) | Semiconductor device and manufacture thereof | |
| JPH05144865A (en) | Manufacturing method and device of semiconductor device | |
| JPH06132329A (en) | Lead frame | |
| JPH0574999A (en) | Semiconductor device and its manufacture | |
| JP3036339B2 (en) | Semiconductor device | |
| JPH08279575A (en) | Semiconductor package | |
| JP2862585B2 (en) | Resin-sealed semiconductor device and method of manufacturing the same | |
| JPH11220087A (en) | Lead frame, semiconductor device using the same and its manufacture | |
| JPH02292850A (en) | Lead frame | |
| JPH0294463A (en) | Semiconductor device | |
| JP4120101B2 (en) | Resin-sealed semiconductor device | |
| JP2000228413A (en) | Manufacture of semiconductor package | |
| JP2000124384A (en) | Semiconductor device, lead frame used therefor and manufacture of semiconductor device | |
| JPH07105408B2 (en) | Method for manufacturing resin-encapsulated semiconductor device and molding die |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000104 |