JPS6194381A - 光導電素子の製造方法 - Google Patents

光導電素子の製造方法

Info

Publication number
JPS6194381A
JPS6194381A JP59216714A JP21671484A JPS6194381A JP S6194381 A JPS6194381 A JP S6194381A JP 59216714 A JP59216714 A JP 59216714A JP 21671484 A JP21671484 A JP 21671484A JP S6194381 A JPS6194381 A JP S6194381A
Authority
JP
Japan
Prior art keywords
manufacturing
vacuum
heat treatment
photoconductive element
element according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59216714A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0510832B2 (enrdf_load_stackoverflow
Inventor
Hiroko Wada
裕子 和田
Kosuke Ikeda
光佑 池田
Yoichi Harada
洋一 原田
Noboru Yoshigami
由上　登
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59216714A priority Critical patent/JPS6194381A/ja
Publication of JPS6194381A publication Critical patent/JPS6194381A/ja
Publication of JPH0510832B2 publication Critical patent/JPH0510832B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe

Landscapes

  • Light Receiving Elements (AREA)
JP59216714A 1984-10-16 1984-10-16 光導電素子の製造方法 Granted JPS6194381A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59216714A JPS6194381A (ja) 1984-10-16 1984-10-16 光導電素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59216714A JPS6194381A (ja) 1984-10-16 1984-10-16 光導電素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6194381A true JPS6194381A (ja) 1986-05-13
JPH0510832B2 JPH0510832B2 (enrdf_load_stackoverflow) 1993-02-10

Family

ID=16692766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59216714A Granted JPS6194381A (ja) 1984-10-16 1984-10-16 光導電素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6194381A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0510832B2 (enrdf_load_stackoverflow) 1993-02-10

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