JPS6317345B2 - - Google Patents

Info

Publication number
JPS6317345B2
JPS6317345B2 JP57186301A JP18630182A JPS6317345B2 JP S6317345 B2 JPS6317345 B2 JP S6317345B2 JP 57186301 A JP57186301 A JP 57186301A JP 18630182 A JP18630182 A JP 18630182A JP S6317345 B2 JPS6317345 B2 JP S6317345B2
Authority
JP
Japan
Prior art keywords
crystal
heat treatment
crystals
quartz tube
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57186301A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5975683A (ja
Inventor
Koki Nagahama
Ryoji Ookata
Toshio Murotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57186301A priority Critical patent/JPS5975683A/ja
Publication of JPS5975683A publication Critical patent/JPS5975683A/ja
Publication of JPS6317345B2 publication Critical patent/JPS6317345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe

Landscapes

  • Light Receiving Elements (AREA)
JP57186301A 1982-10-22 1982-10-22 水銀カドミウムテルライド結晶の処理方法 Granted JPS5975683A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57186301A JPS5975683A (ja) 1982-10-22 1982-10-22 水銀カドミウムテルライド結晶の処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57186301A JPS5975683A (ja) 1982-10-22 1982-10-22 水銀カドミウムテルライド結晶の処理方法

Publications (2)

Publication Number Publication Date
JPS5975683A JPS5975683A (ja) 1984-04-28
JPS6317345B2 true JPS6317345B2 (enrdf_load_stackoverflow) 1988-04-13

Family

ID=16185924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57186301A Granted JPS5975683A (ja) 1982-10-22 1982-10-22 水銀カドミウムテルライド結晶の処理方法

Country Status (1)

Country Link
JP (1) JPS5975683A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5975683A (ja) 1984-04-28

Similar Documents

Publication Publication Date Title
Tufte et al. Growth and Properties of Hg1− x Cd x Te Epitaxial Layers
Feng Anomalous photoelectronic processes in SrTi O 3
US3915765A (en) MBE technique for fabricating semiconductor devices having low series resistance
EP0177918B1 (en) Uv detector and method for fabricating it
US4972244A (en) Photodiode and photodiode array on a II-VI material and processes for the production thereof
CA1071743A (en) Pyroelectric-field effect electromagnetic radiation detector
Arthur Gallium arsenide surface structure and reaction kinetics: Field emission microscopy
Kallmann et al. Photovoltages in silicon and germanium layers
US3870558A (en) Process for preparing a layer of compounds of groups II and VI
Sakai et al. Properties of photoconductive CdS evaporated films
US3793069A (en) Process for preparing a layer of compounds of groups ii and vi
US3642529A (en) Method for making an infrared sensor
JPS6317345B2 (enrdf_load_stackoverflow)
US3932883A (en) Photocathodes
Madden et al. Silicon dioxide passivation of p‐n junction particle detectors
US3900865A (en) Group III-V compound photoemitters having a high quantum efficiency and long wavelength response
JP2746497B2 (ja) 半導体装置の製造方法
US4086106A (en) Halogen-doped Hg,Cd,Te
Bao et al. Study of semitransparent palladium contacts on mercuric iodide by photoluminescence spectroscopy and thermally stimulated current measurements
Fraas et al. Recrystallization of thermally evaporated CdS films via an H2S heat− treatment process
Von Bardeleben et al. EPR characterization of optical‐quality AgGaS2 grown from the melt
GB2058452A (en) Hetero-junction photovoltaic cell
JPS6234157B2 (enrdf_load_stackoverflow)
JP3379054B2 (ja) 半導体結晶の製造方法
Alexiev et al. Gamma-ray detectors from thermally annealed Bridgman-grown CdTe