JPS6177198A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS6177198A
JPS6177198A JP59197924A JP19792484A JPS6177198A JP S6177198 A JPS6177198 A JP S6177198A JP 59197924 A JP59197924 A JP 59197924A JP 19792484 A JP19792484 A JP 19792484A JP S6177198 A JPS6177198 A JP S6177198A
Authority
JP
Japan
Prior art keywords
sense amplifier
lines
transistor
transistors
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59197924A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0249516B2 (cg-RX-API-DMAC7.html
Inventor
Junichi Miyamoto
順一 宮本
Junichi Tsujimoto
辻本　順一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59197924A priority Critical patent/JPS6177198A/ja
Priority to US06/759,142 priority patent/US4680735A/en
Priority to EP85109508A priority patent/EP0175880B1/en
Priority to DE8585109508T priority patent/DE3573186D1/de
Publication of JPS6177198A publication Critical patent/JPS6177198A/ja
Publication of JPH0249516B2 publication Critical patent/JPH0249516B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
JP59197924A 1984-09-21 1984-09-21 半導体記憶装置 Granted JPS6177198A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59197924A JPS6177198A (ja) 1984-09-21 1984-09-21 半導体記憶装置
US06/759,142 US4680735A (en) 1984-09-21 1985-07-26 Semiconductor memory device
EP85109508A EP0175880B1 (en) 1984-09-21 1985-07-29 Semiconductor memory device
DE8585109508T DE3573186D1 (en) 1984-09-21 1985-07-29 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59197924A JPS6177198A (ja) 1984-09-21 1984-09-21 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6177198A true JPS6177198A (ja) 1986-04-19
JPH0249516B2 JPH0249516B2 (cg-RX-API-DMAC7.html) 1990-10-30

Family

ID=16382537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59197924A Granted JPS6177198A (ja) 1984-09-21 1984-09-21 半導体記憶装置

Country Status (4)

Country Link
US (1) US4680735A (cg-RX-API-DMAC7.html)
EP (1) EP0175880B1 (cg-RX-API-DMAC7.html)
JP (1) JPS6177198A (cg-RX-API-DMAC7.html)
DE (1) DE3573186D1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008257833A (ja) * 2007-04-03 2008-10-23 Taiwan Semiconductor Manufacturing Co Ltd センス増幅回路およびセンス増幅方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4800530A (en) * 1986-08-19 1989-01-24 Kabushiki Kasiha Toshiba Semiconductor memory system with dynamic random access memory cells
FR2603414B1 (fr) * 1986-08-29 1988-10-28 Bull Sa Amplificateur de lecture
JPH0194592A (ja) * 1987-10-06 1989-04-13 Fujitsu Ltd 半導体メモリ
KR910009551B1 (ko) * 1988-06-07 1991-11-21 삼성전자 주식회사 메모리장치의 센스앰프 분할 제어회로
JPH0255420A (ja) * 1988-08-20 1990-02-23 Toshiba Corp スタンダードセルおよびスタンダードセル型集積回路
US5173864A (en) * 1988-08-20 1992-12-22 Kabushiki Kaisha Toshiba Standard cell and standard-cell-type integrated circuit
JPH0271493A (ja) * 1988-09-06 1990-03-12 Mitsubishi Electric Corp 半導体メモリ装置
JP2573335B2 (ja) * 1988-11-09 1997-01-22 株式会社東芝 不揮発性メモリ
EP0388176B1 (en) * 1989-03-17 1996-01-10 Matsushita Electronics Corporation Semiconductor memory device
US5321658A (en) * 1990-05-31 1994-06-14 Oki Electric Industry Co., Ltd. Semiconductor memory device being coupled by auxiliary power lines to a main power line
JPH0457282A (ja) * 1990-06-22 1992-02-25 Mitsubishi Electric Corp 半導体メモリ装置
JPH06119784A (ja) * 1992-10-07 1994-04-28 Hitachi Ltd センスアンプとそれを用いたｓｒａｍとマイクロプロセッサ
DE69333909T2 (de) 1992-11-12 2006-07-20 Promos Technologies, Inc. Leseverstärker mit lokalen Schreibtreibern
EP0658000A3 (en) * 1993-12-08 1996-04-03 At & T Corp Fast comparator circuit.
KR960009956B1 (ko) * 1994-02-16 1996-07-25 현대전자산업 주식회사 반도체 소자의 감지 증폭기
KR0121781B1 (ko) * 1994-07-20 1997-12-05 김영환 비트라인 센스 앰프 구동회로
US5481500A (en) * 1994-07-22 1996-01-02 International Business Machines Corporation Precharged bit decoder and sense amplifier with integrated latch usable in pipelined memories
US5526314A (en) * 1994-12-09 1996-06-11 International Business Machines Corporation Two mode sense amplifier with latch
US5805838A (en) * 1996-05-31 1998-09-08 Sun Microsystems, Inc. Fast arbiter with decision storage
US5936905A (en) * 1996-09-03 1999-08-10 Townsend And Townsend And Crew Llp Self adjusting delay circuit and method for compensating sense amplifier clock timing
JP4118364B2 (ja) * 1997-07-16 2008-07-16 日本テキサス・インスツルメンツ株式会社 半導体記憶装置
US5841720A (en) * 1997-08-26 1998-11-24 International Business Machines Corporation Folded dummy world line
US7071737B2 (en) * 2004-07-13 2006-07-04 Kabushiki Kaisha Toshiba Systems and methods for controlling timing in a circuit
JP2008135116A (ja) * 2006-11-28 2008-06-12 Toshiba Corp 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169233A (en) * 1978-02-24 1979-09-25 Rockwell International Corporation High performance CMOS sense amplifier
US4222112A (en) * 1979-02-09 1980-09-09 Bell Telephone Laboratories, Incorporated Dynamic RAM organization for reducing peak current
JPS6032911B2 (ja) * 1979-07-26 1985-07-31 株式会社東芝 半導体記憶装置
DE3307015A1 (de) * 1983-02-28 1984-08-30 Siemens AG, 1000 Berlin und 8000 München Leseverstaerkerschaltung fuer einen statischen mos speicher
JPS6010495A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd センスアンプ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008257833A (ja) * 2007-04-03 2008-10-23 Taiwan Semiconductor Manufacturing Co Ltd センス増幅回路およびセンス増幅方法

Also Published As

Publication number Publication date
DE3573186D1 (en) 1989-10-26
EP0175880A3 (en) 1987-08-19
JPH0249516B2 (cg-RX-API-DMAC7.html) 1990-10-30
US4680735A (en) 1987-07-14
EP0175880A2 (en) 1986-04-02
EP0175880B1 (en) 1989-09-20

Similar Documents

Publication Publication Date Title
JPS6177198A (ja) 半導体記憶装置
US6690608B2 (en) Semiconductor memory device with internal data reading timing set precisely
US6205068B1 (en) Dynamic random access memory device having a divided precharge control scheme
US5724292A (en) Static Semiconductor memory device
US8144526B2 (en) Method to improve the write speed for memory products
US7502247B2 (en) Memory array with a delayed wordline boost
US5959892A (en) Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
US6958931B1 (en) Bit line control and sense amplification for TCCT-based memory cells
JP5068088B2 (ja) 半導体記憶装置
US6982914B2 (en) Semiconductor memory device
US6292413B1 (en) Semiconductor device, semiconductor memory device and semiconductor integrated circuit device
JP4072127B2 (ja) 半導体集積回路
US20190122703A1 (en) Semiconductor memory device and test method therefor
US6856563B2 (en) Semiconductor memory device for enhancing bitline precharge time
US7457182B2 (en) Semiconductor memory including self-timing circuit
KR20000017272A (ko) 센스 앰프 구동회로
US6909654B2 (en) Bit line pre-charge circuit of semiconductor memory device
US6735136B2 (en) Semiconductor memory device capable of preventing coupling noise between adjacent bit lines in different columns
US10971219B2 (en) Semiconductor device
JPH11306782A (ja) 半導体記憶装置
KR100769492B1 (ko) 반도체 집적 회로
US20080037337A1 (en) Semiconductor memory
JP4028840B2 (ja) 半導体読み出し回路
JP3810160B2 (ja) 半導体回路
KR20130070344A (ko) 데이터 센싱 회로 및 이를 포함하는 메모리 장치

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term