JPS6175525A - 微細加工方法 - Google Patents
微細加工方法Info
- Publication number
- JPS6175525A JPS6175525A JP19297084A JP19297084A JPS6175525A JP S6175525 A JPS6175525 A JP S6175525A JP 19297084 A JP19297084 A JP 19297084A JP 19297084 A JP19297084 A JP 19297084A JP S6175525 A JPS6175525 A JP S6175525A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etched
- etching
- resist
- organic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003672 processing method Methods 0.000 title claims description 3
- 238000005530 etching Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 238000012545 processing Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 19
- 150000002366 halogen compounds Chemical class 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19297084A JPS6175525A (ja) | 1984-09-12 | 1984-09-12 | 微細加工方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19297084A JPS6175525A (ja) | 1984-09-12 | 1984-09-12 | 微細加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6175525A true JPS6175525A (ja) | 1986-04-17 |
| JPH0546096B2 JPH0546096B2 (enrdf_load_stackoverflow) | 1993-07-13 |
Family
ID=16300071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19297084A Granted JPS6175525A (ja) | 1984-09-12 | 1984-09-12 | 微細加工方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6175525A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006013183A (ja) * | 2004-06-28 | 2006-01-12 | Opnext Japan Inc | 半導体光素子とその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS546570A (en) * | 1977-06-16 | 1979-01-18 | Sumitomo Electric Ind Ltd | Production of optical guides |
-
1984
- 1984-09-12 JP JP19297084A patent/JPS6175525A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS546570A (en) * | 1977-06-16 | 1979-01-18 | Sumitomo Electric Ind Ltd | Production of optical guides |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006013183A (ja) * | 2004-06-28 | 2006-01-12 | Opnext Japan Inc | 半導体光素子とその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0546096B2 (enrdf_load_stackoverflow) | 1993-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0471222A (ja) | パターン形成方法 | |
| JPS61273546A (ja) | 金属シリサイドフオトマスクの製造方法 | |
| JPS6175525A (ja) | 微細加工方法 | |
| JPH0458167B2 (enrdf_load_stackoverflow) | ||
| JPH06244156A (ja) | パタ―ン形成法 | |
| JPS6354726A (ja) | レジスト膜のエツチング方法 | |
| JPH01105538A (ja) | フォトレジストパターン形成方法 | |
| JPS61288426A (ja) | アルミニウム膜のテ−パエツチング方法 | |
| JPS5950053B2 (ja) | 写真蝕刻方法 | |
| JPS61123144A (ja) | 微細加工方法 | |
| JPS6057630A (ja) | 半導体装置の製造方法 | |
| JPS62234333A (ja) | 微細溝加工用マスクの形成方法 | |
| JPS5892224A (ja) | パタ−ン形成方法 | |
| JPH0282527A (ja) | 半導体装置の製造方法 | |
| JPS63226930A (ja) | 半導体装置の製造方法 | |
| JPH01304457A (ja) | パターン形成方法 | |
| JPH0263049A (ja) | マスクパターンを有する基板及びその製造方法 | |
| JPS60207339A (ja) | パタ−ン形成方法 | |
| JPH04364726A (ja) | パターン形成方法 | |
| JPH01214026A (ja) | メサ構造のエッチング方法 | |
| JPS6321831A (ja) | パタ−ン形成方法 | |
| JPH04335644A (ja) | パターン形成方法 | |
| JPH07111964B2 (ja) | 微細パターンの形成方法 | |
| JPH01270332A (ja) | 半導体装置における電極配線の形成方法 | |
| JPS59172727A (ja) | 微細幅の厚膜パタ−ンの形成方法 |