JPS6174446A - 密着型イメ−ジセンサ - Google Patents
密着型イメ−ジセンサInfo
- Publication number
- JPS6174446A JPS6174446A JP59197158A JP19715884A JPS6174446A JP S6174446 A JPS6174446 A JP S6174446A JP 59197158 A JP59197158 A JP 59197158A JP 19715884 A JP19715884 A JP 19715884A JP S6174446 A JPS6174446 A JP S6174446A
- Authority
- JP
- Japan
- Prior art keywords
- light
- grating
- image sensor
- light shield
- shield layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 230000002411 adverse Effects 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 5
- 239000010410 layer Substances 0.000 description 19
- 238000005286 illumination Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59197158A JPS6174446A (ja) | 1984-09-20 | 1984-09-20 | 密着型イメ−ジセンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59197158A JPS6174446A (ja) | 1984-09-20 | 1984-09-20 | 密着型イメ−ジセンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6174446A true JPS6174446A (ja) | 1986-04-16 |
| JPH051664B2 JPH051664B2 (enrdf_load_stackoverflow) | 1993-01-08 |
Family
ID=16369731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59197158A Granted JPS6174446A (ja) | 1984-09-20 | 1984-09-20 | 密着型イメ−ジセンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6174446A (enrdf_load_stackoverflow) |
-
1984
- 1984-09-20 JP JP59197158A patent/JPS6174446A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH051664B2 (enrdf_load_stackoverflow) | 1993-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |