JPS616198A - ダイヤモンド薄膜の製造法 - Google Patents

ダイヤモンド薄膜の製造法

Info

Publication number
JPS616198A
JPS616198A JP12439284A JP12439284A JPS616198A JP S616198 A JPS616198 A JP S616198A JP 12439284 A JP12439284 A JP 12439284A JP 12439284 A JP12439284 A JP 12439284A JP S616198 A JPS616198 A JP S616198A
Authority
JP
Japan
Prior art keywords
film
substrate
sputtering
diamond
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12439284A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0421638B2 (ru
Inventor
Akio Hiraki
昭夫 平木
Tatsuro Miyasato
達郎 宮里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP12439284A priority Critical patent/JPS616198A/ja
Priority to CA000468432A priority patent/CA1235087A/en
Priority to DE8484308159T priority patent/DE3478475D1/de
Priority to EP84308159A priority patent/EP0156069B1/en
Publication of JPS616198A publication Critical patent/JPS616198A/ja
Priority to US07/020,226 priority patent/US4767517A/en
Publication of JPH0421638B2 publication Critical patent/JPH0421638B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP12439284A 1983-11-28 1984-06-19 ダイヤモンド薄膜の製造法 Granted JPS616198A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP12439284A JPS616198A (ja) 1984-06-19 1984-06-19 ダイヤモンド薄膜の製造法
CA000468432A CA1235087A (en) 1983-11-28 1984-11-22 Diamond-like thin film and method for making the same
DE8484308159T DE3478475D1 (en) 1983-11-28 1984-11-23 Diamond-like thin film and method for making the same
EP84308159A EP0156069B1 (en) 1983-11-28 1984-11-23 Diamond-like thin film and method for making the same
US07/020,226 US4767517A (en) 1983-11-28 1987-03-02 Process of depositing diamond-like thin film by cathode sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12439284A JPS616198A (ja) 1984-06-19 1984-06-19 ダイヤモンド薄膜の製造法

Publications (2)

Publication Number Publication Date
JPS616198A true JPS616198A (ja) 1986-01-11
JPH0421638B2 JPH0421638B2 (ru) 1992-04-13

Family

ID=14884285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12439284A Granted JPS616198A (ja) 1983-11-28 1984-06-19 ダイヤモンド薄膜の製造法

Country Status (1)

Country Link
JP (1) JPS616198A (ru)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63213656A (ja) * 1987-02-28 1988-09-06 Meidensha Electric Mfg Co Ltd 炭素薄膜の形成装置
JPH01192794A (ja) * 1988-01-26 1989-08-02 Nachi Fujikoshi Corp ダイヤモンドの気相合成法
JPH02399U (ru) * 1988-06-08 1990-01-05
US4972250A (en) * 1987-03-02 1990-11-20 Microwave Technology, Inc. Protective coating useful as passivation layer for semiconductor devices
US5087959A (en) * 1987-03-02 1992-02-11 Microwave Technology, Inc. Protective coating useful as a passivation layer for semiconductor devices
JPH05129241A (ja) * 1991-10-21 1993-05-25 Hitachi Chem Co Ltd プラズマエツチング用電極板
JP2002534763A (ja) * 1998-12-23 2002-10-15 ジェンセン エレクトロニック アーベー 放電管
WO2005008762A1 (ja) * 2003-07-17 2005-01-27 Rorze Corporation 低誘電率膜、及びその製造方法、並びにそれを用いた電子部品

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63213656A (ja) * 1987-02-28 1988-09-06 Meidensha Electric Mfg Co Ltd 炭素薄膜の形成装置
US4972250A (en) * 1987-03-02 1990-11-20 Microwave Technology, Inc. Protective coating useful as passivation layer for semiconductor devices
US5087959A (en) * 1987-03-02 1992-02-11 Microwave Technology, Inc. Protective coating useful as a passivation layer for semiconductor devices
JPH01192794A (ja) * 1988-01-26 1989-08-02 Nachi Fujikoshi Corp ダイヤモンドの気相合成法
JPH0474315B2 (ru) * 1988-01-26 1992-11-25
JPH02399U (ru) * 1988-06-08 1990-01-05
JPH05129241A (ja) * 1991-10-21 1993-05-25 Hitachi Chem Co Ltd プラズマエツチング用電極板
JP2002534763A (ja) * 1998-12-23 2002-10-15 ジェンセン エレクトロニック アーベー 放電管
WO2005008762A1 (ja) * 2003-07-17 2005-01-27 Rorze Corporation 低誘電率膜、及びその製造方法、並びにそれを用いた電子部品
US7749920B2 (en) 2003-07-17 2010-07-06 Rorze Corporation Low dielectric constant films and manufacturing method thereof, as well as electronic parts using the same
US8158536B2 (en) 2003-07-17 2012-04-17 Rorze Corporation Low dielectric constant films and manufacturing method thereof, as well as electronic parts using the same

Also Published As

Publication number Publication date
JPH0421638B2 (ru) 1992-04-13

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