JPS6161699B2 - - Google Patents
Info
- Publication number
- JPS6161699B2 JPS6161699B2 JP18722280A JP18722280A JPS6161699B2 JP S6161699 B2 JPS6161699 B2 JP S6161699B2 JP 18722280 A JP18722280 A JP 18722280A JP 18722280 A JP18722280 A JP 18722280A JP S6161699 B2 JPS6161699 B2 JP S6161699B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring body
- layer wiring
- upper layer
- etching
- bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 51
- 238000005530 etching Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18722280A JPS57112052A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18722280A JPS57112052A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57112052A JPS57112052A (en) | 1982-07-12 |
| JPS6161699B2 true JPS6161699B2 (de) | 1986-12-26 |
Family
ID=16202201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18722280A Granted JPS57112052A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57112052A (de) |
-
1980
- 1980-12-29 JP JP18722280A patent/JPS57112052A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57112052A (en) | 1982-07-12 |
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