JPS6161551B2 - - Google Patents
Info
- Publication number
- JPS6161551B2 JPS6161551B2 JP54128179A JP12817979A JPS6161551B2 JP S6161551 B2 JPS6161551 B2 JP S6161551B2 JP 54128179 A JP54128179 A JP 54128179A JP 12817979 A JP12817979 A JP 12817979A JP S6161551 B2 JPS6161551 B2 JP S6161551B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- amorphous semiconductor
- photovoltaic
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 229910052697 platinum Inorganic materials 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- -1 silicon ions Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12817979A JPS5651880A (en) | 1979-10-04 | 1979-10-04 | Amorphous semiconductor photocell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12817979A JPS5651880A (en) | 1979-10-04 | 1979-10-04 | Amorphous semiconductor photocell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5651880A JPS5651880A (en) | 1981-05-09 |
| JPS6161551B2 true JPS6161551B2 (US07655688-20100202-C00086.png) | 1986-12-26 |
Family
ID=14978367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12817979A Granted JPS5651880A (en) | 1979-10-04 | 1979-10-04 | Amorphous semiconductor photocell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5651880A (US07655688-20100202-C00086.png) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4626878A (en) * | 1981-12-11 | 1986-12-02 | Sanyo Electric Co., Ltd. | Semiconductor optical logical device |
| JPS5996779A (ja) * | 1982-11-24 | 1984-06-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| JPH02164079A (ja) * | 1988-12-19 | 1990-06-25 | Hitachi Ltd | アモルファスシリコン太陽電池 |
| JPH02164077A (ja) * | 1988-12-19 | 1990-06-25 | Hitachi Ltd | アモルファスシリコン太陽電池 |
| JPH03157976A (ja) * | 1989-11-15 | 1991-07-05 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPH0423364A (ja) * | 1990-05-15 | 1992-01-27 | Showa Shell Sekiyu Kk | 鏡として利用可能な光起電力装置 |
-
1979
- 1979-10-04 JP JP12817979A patent/JPS5651880A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5651880A (en) | 1981-05-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3203078B2 (ja) | 光起電力素子 | |
| EP2494607B1 (en) | Polarization resistant solar cell | |
| EP2609628B1 (en) | Photovoltaic device and module with improved passivation and a method of manufacturing. | |
| JP2009529236A (ja) | 薄膜型太陽電池及びその製造方法 | |
| JPS6138870B2 (US07655688-20100202-C00086.png) | ||
| WO2015098426A1 (ja) | 太陽電池及びその製造方法 | |
| JPS60149178A (ja) | 太陽電池 | |
| JPS6161551B2 (US07655688-20100202-C00086.png) | ||
| JP3721620B2 (ja) | 並列型集積化太陽電池 | |
| JPH0125235B2 (US07655688-20100202-C00086.png) | ||
| JPS59161081A (ja) | 薄膜太陽電池 | |
| JPS62256481A (ja) | 半導体装置 | |
| JP2936269B2 (ja) | アモルファス太陽電池 | |
| JPS6321880A (ja) | 光起電力装置 | |
| JPS58196060A (ja) | 薄膜半導体装置 | |
| JP2680577B2 (ja) | 光起電力装置 | |
| JP2630657B2 (ja) | 集積型多層アモルファス太陽電池の製造方法 | |
| JPS5946426B2 (ja) | 太陽電池の製造方法 | |
| JP2884171B2 (ja) | アモルファス太陽電池 | |
| JPH0314053Y2 (US07655688-20100202-C00086.png) | ||
| JPS6077471A (ja) | 光発電装置 | |
| JP2726045B2 (ja) | 光発電装置 | |
| JPH0444433B2 (US07655688-20100202-C00086.png) | ||
| JPS60246681A (ja) | 多層型光電変換素子 | |
| JPS6316913B2 (US07655688-20100202-C00086.png) |
