JPS6161549B2 - - Google Patents

Info

Publication number
JPS6161549B2
JPS6161549B2 JP54149818A JP14981879A JPS6161549B2 JP S6161549 B2 JPS6161549 B2 JP S6161549B2 JP 54149818 A JP54149818 A JP 54149818A JP 14981879 A JP14981879 A JP 14981879A JP S6161549 B2 JPS6161549 B2 JP S6161549B2
Authority
JP
Japan
Prior art keywords
resist
active layer
electrode
gate
walls
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54149818A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5671981A (en
Inventor
Shunji Ootani
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP14981879A priority Critical patent/JPS5671981A/ja
Priority to US06/206,215 priority patent/US4377899A/en
Priority to DE19803043289 priority patent/DE3043289A1/de
Priority to FR8024416A priority patent/FR2474761B1/fr
Publication of JPS5671981A publication Critical patent/JPS5671981A/ja
Publication of JPS6161549B2 publication Critical patent/JPS6161549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP14981879A 1979-11-19 1979-11-19 Preparation method of semiconductor system Granted JPS5671981A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP14981879A JPS5671981A (en) 1979-11-19 1979-11-19 Preparation method of semiconductor system
US06/206,215 US4377899A (en) 1979-11-19 1980-11-12 Method of manufacturing Schottky field-effect transistors utilizing shadow masking
DE19803043289 DE3043289A1 (de) 1979-11-19 1980-11-17 Herstellungverfahren fuer eine halbleitereinrichtung
FR8024416A FR2474761B1 (fr) 1979-11-19 1980-11-18 Procede de fabrication de transistors a effet de champ a porte formant barriere de schottky

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14981879A JPS5671981A (en) 1979-11-19 1979-11-19 Preparation method of semiconductor system

Publications (2)

Publication Number Publication Date
JPS5671981A JPS5671981A (en) 1981-06-15
JPS6161549B2 true JPS6161549B2 (en, 2012) 1986-12-26

Family

ID=15483365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14981879A Granted JPS5671981A (en) 1979-11-19 1979-11-19 Preparation method of semiconductor system

Country Status (1)

Country Link
JP (1) JPS5671981A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635364A (ja) * 1986-06-25 1988-01-11 Ricoh Co Ltd 電子写真複写装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529952A (en) * 1994-09-20 1996-06-25 Texas Instruments Incorporated Method of fabricating lateral resonant tunneling structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635364A (ja) * 1986-06-25 1988-01-11 Ricoh Co Ltd 電子写真複写装置

Also Published As

Publication number Publication date
JPS5671981A (en) 1981-06-15

Similar Documents

Publication Publication Date Title
US4377899A (en) Method of manufacturing Schottky field-effect transistors utilizing shadow masking
US3994758A (en) Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection
JPH03292744A (ja) 化合物半導体装置およびその製造方法
US4673960A (en) Fabrication of metal lines for semiconductor devices
JP2735718B2 (ja) 化合物半導体装置及びその製造方法
US5231040A (en) Method of making a field effect transistor
JPS6161549B2 (en, 2012)
GB2064868A (en) Schottky barrier gate field-effect transistor
JPH065682B2 (ja) 半導体装置の製造方法
JP2664527B2 (ja) 半導体装置
JPS59165463A (ja) 化合物半導体電界効果トランジスタの製造方法
JPS6161550B2 (en, 2012)
JPH05129345A (ja) マイクロ波集積回路の製造方法
JPS6057977A (ja) シヨツトキゲ−ト型電界効果トランジスタの製造方法
JPS6323667B2 (en, 2012)
JPS61240684A (ja) シヨツトキ−型電界効果トランジスタ及びその製造方法
JPH0523497B2 (en, 2012)
JPS5833714B2 (ja) 砒化ガリウムショットキ障壁ゲ−ト型電界効果トランジスタの製造方法
JPH035658B2 (en, 2012)
JPS62293679A (ja) 電界効果型半導体装置及びその製造方法
JPS6321877A (ja) 半導体素子の製造方法
JPH06232168A (ja) 電界効果トランジスタおよびその製造方法
JPH02262342A (ja) 半導体装置の製造方法
JPS62260370A (ja) 電界効果トランジスタの製造方法
JPH02220449A (ja) 電界効果トランジスタおよびその製造方法