JPS6161377B2 - - Google Patents

Info

Publication number
JPS6161377B2
JPS6161377B2 JP3220080A JP3220080A JPS6161377B2 JP S6161377 B2 JPS6161377 B2 JP S6161377B2 JP 3220080 A JP3220080 A JP 3220080A JP 3220080 A JP3220080 A JP 3220080A JP S6161377 B2 JPS6161377 B2 JP S6161377B2
Authority
JP
Japan
Prior art keywords
pattern
mask
light
corrected
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3220080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56128946A (en
Inventor
Atsushi Myahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3220080A priority Critical patent/JPS56128946A/ja
Priority to IE559/81A priority patent/IE51020B1/en
Priority to DE8181301061T priority patent/DE3163942D1/de
Priority to EP81301061A priority patent/EP0036310B1/en
Publication of JPS56128946A publication Critical patent/JPS56128946A/ja
Priority to US06/941,551 priority patent/US4789611A/en
Publication of JPS6161377B2 publication Critical patent/JPS6161377B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP3220080A 1980-03-14 1980-03-14 Photomask correcting method Granted JPS56128946A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3220080A JPS56128946A (en) 1980-03-14 1980-03-14 Photomask correcting method
IE559/81A IE51020B1 (en) 1980-03-14 1981-03-13 Method and apparatus for amending a photomask
DE8181301061T DE3163942D1 (en) 1980-03-14 1981-03-13 Method and apparatus for amending a photomask
EP81301061A EP0036310B1 (en) 1980-03-14 1981-03-13 Method and apparatus for amending a photomask
US06/941,551 US4789611A (en) 1980-03-14 1986-12-11 Method for amending a photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3220080A JPS56128946A (en) 1980-03-14 1980-03-14 Photomask correcting method

Publications (2)

Publication Number Publication Date
JPS56128946A JPS56128946A (en) 1981-10-08
JPS6161377B2 true JPS6161377B2 (enExample) 1986-12-25

Family

ID=12352260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3220080A Granted JPS56128946A (en) 1980-03-14 1980-03-14 Photomask correcting method

Country Status (5)

Country Link
US (1) US4789611A (enExample)
EP (1) EP0036310B1 (enExample)
JP (1) JPS56128946A (enExample)
DE (1) DE3163942D1 (enExample)
IE (1) IE51020B1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222838A (ja) * 1983-06-01 1984-12-14 Toppan Printing Co Ltd 欠陥修正装置
EP0203215B1 (de) * 1985-05-29 1990-02-21 Ibm Deutschland Gmbh Verfahren zur Reparatur von Transmissionsmasken
US4871415A (en) * 1988-12-30 1989-10-03 Zenith Electronics Corporation Apparatus and method for curing a defect in a grille formed on a panel of a color cathode ray tube
KR100190423B1 (ko) * 1989-06-06 1999-06-01 기타지마 요시도시 에멀젼마스크 등의결함 수정방법 및 장치
JPH03295220A (ja) * 1990-04-13 1991-12-26 Nikon Corp 薄膜除去方法及び装置
US5272024A (en) * 1992-04-08 1993-12-21 International Business Machines Corporation Mask-structure and process to repair missing or unwanted phase-shifting elements
US6277526B1 (en) * 1998-12-28 2001-08-21 Micron Technology, Inc. Method for repairing MoSi attenuated phase shift masks
DE10227304A1 (de) * 2002-06-19 2004-01-15 Infineon Technologies Ag Verfahren zum Belichten eines Halbleiterwafers in einem Belichtungsapparat
JP4691653B2 (ja) * 2005-04-07 2011-06-01 国立大学法人東北大学 データ生成方法、データ生成装置、及びプログラム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245794A (en) * 1962-10-29 1966-04-12 Ihilco Corp Sequential registration scheme
US3492072A (en) * 1965-04-14 1970-01-27 Westinghouse Electric Corp Apparatus for producing radiation patterns for forming etchant-resistant patterns and the like
DE1564290C3 (de) * 1966-10-13 1975-08-07 Ernst Leitz Gmbh, 6330 Wetzlar Verfahren zum Ausrichten von Kopiermasken bei der Halbleiterfertigung und Vorrichtung zur Durchführung des Verfahrens
IT967781B (it) * 1971-10-08 1974-03-11 Rca Corp Metodo per la riparazione di di fetti in sottili strati pellico lari configurati
BE793605A (fr) * 1972-01-03 1973-05-02 Rca Corp Appareil et procede pour corriger un masque photographique defectueux
US3844655A (en) * 1973-07-27 1974-10-29 Kasper Instruments Method and means for forming an aligned mask that does not include alignment marks employed in aligning the mask
US4052603A (en) * 1974-12-23 1977-10-04 International Business Machines Corporation Object positioning process and apparatus
JPS5419366A (en) * 1977-07-14 1979-02-14 Nippon Jidoseigyo Ltd Device for inspecting fault of pattern
US4200668A (en) * 1978-09-05 1980-04-29 Western Electric Company, Inc. Method of repairing a defective photomask

Also Published As

Publication number Publication date
EP0036310A3 (en) 1981-12-30
IE51020B1 (en) 1986-09-03
EP0036310B1 (en) 1984-06-06
US4789611A (en) 1988-12-06
DE3163942D1 (en) 1984-07-12
IE810559L (en) 1981-09-14
JPS56128946A (en) 1981-10-08
EP0036310A2 (en) 1981-09-23

Similar Documents

Publication Publication Date Title
JP2886522B2 (ja) 位相シフト・マスク矯正方法および位相シフト・マスク・システム
JP3556591B2 (ja) グレートーンマスクにおけるグレートーン部の欠陥修正方法
US6664010B2 (en) OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration
JPS6161377B2 (enExample)
KR100650365B1 (ko) 그레이톤 마스크의 결함 수정 방법
JP3831138B2 (ja) パターン形成方法
JPS5968928A (ja) 半導体装置の製造方法
US5793472A (en) Exposure method using reference marks on both the mask and the substrate and capable of providing high alignment precision even after multiple exposures
JPH0980741A (ja) ハーフトーン位相シフトマスクの欠陥修正方法およびハーフトーン位相シフトマスク
JP3050158B2 (ja) マスクの修正方法
JPS63155145A (ja) マスクの白点欠陥修正方法
JPH0787174B2 (ja) パタ−ン形成方法
JP3070870B2 (ja) マスク修正方法
JPS602956A (ja) フオトマスクの製造方法
JPS6245026A (ja) 半導体集積回路の写真製版方法
JPS63942B2 (enExample)
JPS63218959A (ja) ホトマスクパタ−ンの修正方法
JPH02115842A (ja) ホトマスク欠陥の修正方法
JP2715462B2 (ja) レチクル及びこれを用いる半導体装置の製造方法
JPH01278018A (ja) パターン形成方法
JPS6258139B2 (enExample)
JP2878551B2 (ja) 露光方法
JPS6053872B2 (ja) 遮光性マスクの修正方法
JPH04136855A (ja) 露光用マスクの製造方法
JPH05291106A (ja) 半導体ウエハーの露光方法