JPS6161268B2 - - Google Patents

Info

Publication number
JPS6161268B2
JPS6161268B2 JP54062996A JP6299679A JPS6161268B2 JP S6161268 B2 JPS6161268 B2 JP S6161268B2 JP 54062996 A JP54062996 A JP 54062996A JP 6299679 A JP6299679 A JP 6299679A JP S6161268 B2 JPS6161268 B2 JP S6161268B2
Authority
JP
Japan
Prior art keywords
diffusion layer
semiconductor
silicon nitride
glass
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54062996A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55154769A (en
Inventor
Hideto Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP6299679A priority Critical patent/JPS55154769A/ja
Publication of JPS55154769A publication Critical patent/JPS55154769A/ja
Publication of JPS6161268B2 publication Critical patent/JPS6161268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Formation Of Insulating Films (AREA)
JP6299679A 1979-05-22 1979-05-22 Manufacture of semiconductor device Granted JPS55154769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6299679A JPS55154769A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6299679A JPS55154769A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55154769A JPS55154769A (en) 1980-12-02
JPS6161268B2 true JPS6161268B2 (OSRAM) 1986-12-24

Family

ID=13216484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6299679A Granted JPS55154769A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55154769A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179060U (OSRAM) * 1988-06-10 1989-12-21

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935474A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
JPS5935475A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
US5539229A (en) * 1994-12-28 1996-07-23 International Business Machines Corporation MOSFET with raised STI isolation self-aligned to the gate stack

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179060U (OSRAM) * 1988-06-10 1989-12-21

Also Published As

Publication number Publication date
JPS55154769A (en) 1980-12-02

Similar Documents

Publication Publication Date Title
US4209349A (en) Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US5158903A (en) Method for producing a field-effect type semiconductor device
US4292091A (en) Method of producing semiconductor devices by selective laser irradiation and oxidation
US4545114A (en) Method of producing semiconductor device
US4149307A (en) Process for fabricating insulated-gate field-effect transistors with self-aligned contacts
US4125426A (en) Method of manufacturing semiconductor device
US5488004A (en) SOI by large angle oxygen implant
US4267011A (en) Method for manufacturing a semiconductor device
US4060427A (en) Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps
US4413401A (en) Method for making a semiconductor capacitor
JP2886494B2 (ja) 集積回路チップの製造方法
JPH0586673B2 (OSRAM)
US4502894A (en) Method of fabricating polycrystalline silicon resistors in integrated circuit structures using outdiffusion
JPS6214459A (ja) 半導体装置の製造方法
US4290186A (en) Method of making integrated semiconductor structure having an MOS and a capacitor device
US4560421A (en) Semiconductor device and method of manufacturing the same
JPS6161268B2 (OSRAM)
US4586243A (en) Method for more uniformly spacing features in a semiconductor monolithic integrated circuit
RU1830156C (ru) Способ изготовлени полупроводниковых приборов
US4653173A (en) Method of manufacturing an insulated gate field effect device
JPS62290180A (ja) 半導体装置の製法
JPH01272161A (ja) Ｍｏｓ型ｆｅｔの製造方法
JPH0127589B2 (OSRAM)
JPS6138858B2 (OSRAM)
JPS6220711B2 (OSRAM)