JPS6161154A - 微細ネガレジストパターン形成方法 - Google Patents
微細ネガレジストパターン形成方法Info
- Publication number
- JPS6161154A JPS6161154A JP59182589A JP18258984A JPS6161154A JP S6161154 A JPS6161154 A JP S6161154A JP 59182589 A JP59182589 A JP 59182589A JP 18258984 A JP18258984 A JP 18258984A JP S6161154 A JPS6161154 A JP S6161154A
- Authority
- JP
- Japan
- Prior art keywords
- rays
- pattern
- resist
- dry etching
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59182589A JPS6161154A (ja) | 1984-09-03 | 1984-09-03 | 微細ネガレジストパターン形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59182589A JPS6161154A (ja) | 1984-09-03 | 1984-09-03 | 微細ネガレジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6161154A true JPS6161154A (ja) | 1986-03-28 |
JPH0480377B2 JPH0480377B2 (enrdf_load_stackoverflow) | 1992-12-18 |
Family
ID=16120931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59182589A Granted JPS6161154A (ja) | 1984-09-03 | 1984-09-03 | 微細ネガレジストパターン形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6161154A (enrdf_load_stackoverflow) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62273529A (ja) * | 1986-05-10 | 1987-11-27 | チバ−ガイギ− アクチエンゲゼル シヤフト | 画像形成方法 |
JPS6373522A (ja) * | 1986-09-16 | 1988-04-04 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS63133626A (ja) * | 1986-11-26 | 1988-06-06 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS63200531A (ja) * | 1987-02-17 | 1988-08-18 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS6435438A (en) * | 1987-07-01 | 1989-02-06 | Ciba Geigy Ag | Image formation |
JPS6489424A (en) * | 1987-09-30 | 1989-04-03 | Matsushita Electronics Corp | Resist-pattern forming method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4948403A (enrdf_load_stackoverflow) * | 1972-05-05 | 1974-05-10 | ||
JPS50127619A (enrdf_load_stackoverflow) * | 1974-03-27 | 1975-10-07 | ||
JPS50141404A (enrdf_load_stackoverflow) * | 1974-04-30 | 1975-11-13 |
-
1984
- 1984-09-03 JP JP59182589A patent/JPS6161154A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4948403A (enrdf_load_stackoverflow) * | 1972-05-05 | 1974-05-10 | ||
JPS50127619A (enrdf_load_stackoverflow) * | 1974-03-27 | 1975-10-07 | ||
JPS50141404A (enrdf_load_stackoverflow) * | 1974-04-30 | 1975-11-13 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62273529A (ja) * | 1986-05-10 | 1987-11-27 | チバ−ガイギ− アクチエンゲゼル シヤフト | 画像形成方法 |
JPS6373522A (ja) * | 1986-09-16 | 1988-04-04 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS63133626A (ja) * | 1986-11-26 | 1988-06-06 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS63200531A (ja) * | 1987-02-17 | 1988-08-18 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS6435438A (en) * | 1987-07-01 | 1989-02-06 | Ciba Geigy Ag | Image formation |
JPS6489424A (en) * | 1987-09-30 | 1989-04-03 | Matsushita Electronics Corp | Resist-pattern forming method |
Also Published As
Publication number | Publication date |
---|---|
JPH0480377B2 (enrdf_load_stackoverflow) | 1992-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111948904B (zh) | 光刻胶组合物、用它形成光刻图案的方法及其用途 | |
US4609614A (en) | Process of using absorptive layer in optical lithography with overlying photoresist layer to form relief pattern on substrate | |
JPH01233443A (ja) | パターン形成方法 | |
JPS5949536A (ja) | 微細パタ−ン形成方法 | |
JPS6161154A (ja) | 微細ネガレジストパターン形成方法 | |
JPH0344291B2 (enrdf_load_stackoverflow) | ||
JPH0210824A (ja) | 電子線レジスト現像方法 | |
JPH02251962A (ja) | 微細パターン形成材料およびパターン形成方法 | |
JPS617835A (ja) | レジスト材料 | |
JPH0334053B2 (enrdf_load_stackoverflow) | ||
JP3766245B2 (ja) | パタン形成方法および半導体装置の製造方法 | |
KR100944336B1 (ko) | 반도체 소자의 미세패턴 형성 방법 | |
JPS5828571B2 (ja) | 微細加工用レジスト形成方法 | |
JPH0545883A (ja) | 感光性組成物 | |
JPH07196743A (ja) | 放射線感光材料及びパターン形成方法 | |
JPS61289345A (ja) | リソグラフイ用レジスト | |
JPS60254036A (ja) | パタ−ン形成方法 | |
JPH0334055B2 (enrdf_load_stackoverflow) | ||
JPH02191954A (ja) | X線レジスト | |
JPS61159633A (ja) | ネガ型レジスト組成物及びネガ型レジストパタ−ンの形成方法 | |
JPH0334052B2 (enrdf_load_stackoverflow) | ||
JPS62133444A (ja) | パタ−ン形成有機材料 | |
JPS60138541A (ja) | パタ−ン形成方法 | |
JPH01244447A (ja) | パターン形成方法及びこれに用いるレジスト材料 | |
JPH03116048A (ja) | 感光性組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |