JPS6159536B2 - - Google Patents
Info
- Publication number
- JPS6159536B2 JPS6159536B2 JP54007127A JP712779A JPS6159536B2 JP S6159536 B2 JPS6159536 B2 JP S6159536B2 JP 54007127 A JP54007127 A JP 54007127A JP 712779 A JP712779 A JP 712779A JP S6159536 B2 JPS6159536 B2 JP S6159536B2
- Authority
- JP
- Japan
- Prior art keywords
- collector
- base
- iil
- emitter
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP712779A JPS5599767A (en) | 1979-01-26 | 1979-01-26 | Iil type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP712779A JPS5599767A (en) | 1979-01-26 | 1979-01-26 | Iil type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5599767A JPS5599767A (en) | 1980-07-30 |
| JPS6159536B2 true JPS6159536B2 (enrdf_load_stackoverflow) | 1986-12-17 |
Family
ID=11657406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP712779A Granted JPS5599767A (en) | 1979-01-26 | 1979-01-26 | Iil type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5599767A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210011861A (ko) | 2019-07-23 | 2021-02-02 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
-
1979
- 1979-01-26 JP JP712779A patent/JPS5599767A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210011861A (ko) | 2019-07-23 | 2021-02-02 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5599767A (en) | 1980-07-30 |
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