JPS5599767A - Iil type semiconductor device - Google Patents

Iil type semiconductor device

Info

Publication number
JPS5599767A
JPS5599767A JP712779A JP712779A JPS5599767A JP S5599767 A JPS5599767 A JP S5599767A JP 712779 A JP712779 A JP 712779A JP 712779 A JP712779 A JP 712779A JP S5599767 A JPS5599767 A JP S5599767A
Authority
JP
Japan
Prior art keywords
emitter
transfer rate
regions
current transfer
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP712779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159536B2 (enrdf_load_stackoverflow
Inventor
Yasushi Hatta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP712779A priority Critical patent/JPS5599767A/ja
Publication of JPS5599767A publication Critical patent/JPS5599767A/ja
Publication of JPS6159536B2 publication Critical patent/JPS6159536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP712779A 1979-01-26 1979-01-26 Iil type semiconductor device Granted JPS5599767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP712779A JPS5599767A (en) 1979-01-26 1979-01-26 Iil type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP712779A JPS5599767A (en) 1979-01-26 1979-01-26 Iil type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5599767A true JPS5599767A (en) 1980-07-30
JPS6159536B2 JPS6159536B2 (enrdf_load_stackoverflow) 1986-12-17

Family

ID=11657406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP712779A Granted JPS5599767A (en) 1979-01-26 1979-01-26 Iil type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5599767A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6956147B2 (ja) 2019-07-23 2021-10-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム

Also Published As

Publication number Publication date
JPS6159536B2 (enrdf_load_stackoverflow) 1986-12-17

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