JPS6155260B2 - - Google Patents

Info

Publication number
JPS6155260B2
JPS6155260B2 JP55115391A JP11539180A JPS6155260B2 JP S6155260 B2 JPS6155260 B2 JP S6155260B2 JP 55115391 A JP55115391 A JP 55115391A JP 11539180 A JP11539180 A JP 11539180A JP S6155260 B2 JPS6155260 B2 JP S6155260B2
Authority
JP
Japan
Prior art keywords
region
thyristor
electrode
semiconductor
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55115391A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5739574A (en
Inventor
Yoichi Araki
Toshio Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55115391A priority Critical patent/JPS5739574A/ja
Priority to DE8181106493T priority patent/DE3173128D1/de
Priority to EP81106493A priority patent/EP0046578B1/en
Priority to US06/294,750 priority patent/US4445133A/en
Priority to CA000384419A priority patent/CA1154173A/en
Publication of JPS5739574A publication Critical patent/JPS5739574A/ja
Publication of JPS6155260B2 publication Critical patent/JPS6155260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Thyristors (AREA)
JP55115391A 1980-08-22 1980-08-22 Semiconductor device Granted JPS5739574A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55115391A JPS5739574A (en) 1980-08-22 1980-08-22 Semiconductor device
DE8181106493T DE3173128D1 (en) 1980-08-22 1981-08-20 Power thyristor
EP81106493A EP0046578B1 (en) 1980-08-22 1981-08-20 Power thyristor
US06/294,750 US4445133A (en) 1980-08-22 1981-08-20 Semiconductor device
CA000384419A CA1154173A (en) 1980-08-22 1981-08-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55115391A JPS5739574A (en) 1980-08-22 1980-08-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5739574A JPS5739574A (en) 1982-03-04
JPS6155260B2 true JPS6155260B2 (en, 2012) 1986-11-27

Family

ID=14661380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55115391A Granted JPS5739574A (en) 1980-08-22 1980-08-22 Semiconductor device

Country Status (5)

Country Link
US (1) US4445133A (en, 2012)
EP (1) EP0046578B1 (en, 2012)
JP (1) JPS5739574A (en, 2012)
CA (1) CA1154173A (en, 2012)
DE (1) DE3173128D1 (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151063A (ja) * 2010-01-19 2011-08-04 Sansha Electric Mfg Co Ltd サイリスタ
JP2014135510A (ja) * 2014-03-19 2014-07-24 Sansha Electric Mfg Co Ltd サイリスタ

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2132327B (en) * 1982-12-14 1986-03-26 Apv Co Ltd Heat transfer apparatus
IT1212799B (it) * 1983-12-15 1989-11-30 Ates Componenti Elettron Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.
US5656966A (en) * 1994-03-09 1997-08-12 Cooper Industries, Inc. Turbine engine ignition exciter circuit including low voltage lockout control
US5981982A (en) * 1994-03-09 1999-11-09 Driscoll; John Cuervo Dual gated power electronic switching devices
US5970324A (en) * 1994-03-09 1999-10-19 Driscoll; John Cuervo Methods of making dual gated power electronic switching devices
US5592118A (en) * 1994-03-09 1997-01-07 Cooper Industries, Inc. Ignition exciter circuit with thyristors having high di/dt and high voltage blockage
US7355300B2 (en) 2004-06-15 2008-04-08 Woodward Governor Company Solid state turbine engine ignition exciter having elevated temperature operational capability

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
NL6408263A (en, 2012) * 1964-07-18 1966-01-19
US3486088A (en) * 1968-05-22 1969-12-23 Nat Electronics Inc Regenerative gate thyristor construction
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
US3622845A (en) * 1969-05-01 1971-11-23 Gen Electric Scr with amplified emitter gate
JPS541437B2 (en, 2012) * 1973-04-18 1979-01-24
US3796850A (en) * 1973-05-31 1974-03-12 Westinghouse Electric Corp Pan detector for induction heating cooking unit
US4086612A (en) * 1973-06-12 1978-04-25 Siemens Aktiengesellschaft Thyristor
JPS5632528B2 (en, 2012) * 1973-06-27 1981-07-28
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
JPS53110483A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Thyristor
JPS5942991B2 (ja) * 1977-05-23 1984-10-18 株式会社日立製作所 サイリスタ
JPS584827B2 (ja) * 1977-07-20 1983-01-27 株式会社日立製作所 サイリスタ
JPS5939909B2 (ja) * 1978-03-31 1984-09-27 株式会社東芝 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151063A (ja) * 2010-01-19 2011-08-04 Sansha Electric Mfg Co Ltd サイリスタ
JP2014135510A (ja) * 2014-03-19 2014-07-24 Sansha Electric Mfg Co Ltd サイリスタ

Also Published As

Publication number Publication date
DE3173128D1 (en) 1986-01-16
EP0046578A3 (en) 1983-06-22
US4445133A (en) 1984-04-24
EP0046578B1 (en) 1985-12-04
CA1154173A (en) 1983-09-20
EP0046578A2 (en) 1982-03-03
JPS5739574A (en) 1982-03-04

Similar Documents

Publication Publication Date Title
JPS6150392B2 (en, 2012)
JPS6155260B2 (en, 2012)
JPS6040193B2 (ja) トライアツク
JPS609668B2 (ja) サイリスタ
JPS6151811B2 (en, 2012)
JPS609671B2 (ja) 光点弧形サイリスタ
JPH0122748B2 (en, 2012)
US3914783A (en) Multi-layer semiconductor device
JPH0138383B2 (en, 2012)
US3372318A (en) Semiconductor switches
JPH0142510B2 (en, 2012)
US4210924A (en) Semiconductor controlled rectifier with configured cathode to eliminate hot-spots
JPS6220713B2 (en, 2012)
JPH0138384B2 (en, 2012)
JPS5987868A (ja) 過電圧自己保護構造のサイリスタ
JPS6043036B2 (ja) サイリスタ
JPS6348135Y2 (en, 2012)
JPH0139226B2 (en, 2012)
JPS621260B2 (en, 2012)
JPS5868977A (ja) サイリスタ
JPH0685437B2 (ja) 両方向性２端子サイリスタ
JP2000174257A (ja) 半導体制御整流素子
JPS58189B2 (ja) ゲ−トタ−ンオフサイリスタ
JPH01181571A (ja) 導電変調型ｍｏｓｆｅｔ
JP2000294764A (ja) 半導体制御整流素子