JPH0122748B2 - - Google Patents
Info
- Publication number
- JPH0122748B2 JPH0122748B2 JP56072089A JP7208981A JPH0122748B2 JP H0122748 B2 JPH0122748 B2 JP H0122748B2 JP 56072089 A JP56072089 A JP 56072089A JP 7208981 A JP7208981 A JP 7208981A JP H0122748 B2 JPH0122748 B2 JP H0122748B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- semiconductor device
- emitter layer
- terminal
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 57
- 239000010410 layer Substances 0.000 description 78
- 230000000903 blocking effect Effects 0.000 description 11
- 230000007704 transition Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/138—Thyristors having built-in components the built-in components being FETs
Landscapes
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803018499 DE3018499A1 (de) | 1980-05-14 | 1980-05-14 | Halbleiterbauelement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS577159A JPS577159A (en) | 1982-01-14 |
| JPH0122748B2 true JPH0122748B2 (en, 2012) | 1989-04-27 |
Family
ID=6102438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7208981A Granted JPS577159A (en) | 1980-05-14 | 1981-05-13 | Semiconductor element |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4464673A (en, 2012) |
| EP (1) | EP0039941B1 (en, 2012) |
| JP (1) | JPS577159A (en, 2012) |
| CA (1) | CA1164105A (en, 2012) |
| DE (1) | DE3018499A1 (en, 2012) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3118365A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden |
| US5111268A (en) * | 1981-12-16 | 1992-05-05 | General Electric Company | Semiconductor device with improved turn-off capability |
| US4816892A (en) * | 1982-02-03 | 1989-03-28 | General Electric Company | Semiconductor device having turn-on and turn-off capabilities |
| JPS5927569A (ja) * | 1982-08-06 | 1984-02-14 | Hitachi Ltd | 半導体スイツチ素子 |
| DE3370248D1 (en) * | 1982-10-04 | 1987-04-16 | Gen Electric | Thyristor with turn-off capability |
| US4717940A (en) * | 1986-03-11 | 1988-01-05 | Kabushiki Kaisha Toshiba | MIS controlled gate turn-off thyristor |
| EP0394859A1 (de) * | 1989-04-28 | 1990-10-31 | Asea Brown Boveri Ag | Bidirektionals, abschaltbares Halbeiterbauelement |
| FR2712428B1 (fr) * | 1993-11-10 | 1996-02-09 | Sgs Thomson Microelectronics | Commutateur bidirectionnel à commande en tension. |
| DE19721655C1 (de) | 1997-05-23 | 1998-12-03 | Daimler Benz Ag | Thyristor mit Selbstschutz |
| JP3831846B2 (ja) * | 2003-06-09 | 2006-10-11 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL293292A (en, 2012) * | 1962-06-11 | |||
| JPS5629458B2 (en, 2012) * | 1973-07-02 | 1981-07-08 | ||
| DE2438894C3 (de) * | 1974-08-13 | 1979-02-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor mit Kurzschlußemitter |
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| US4115707A (en) * | 1977-03-31 | 1978-09-19 | Rca Corporation | Circuit for single-line control of GTO controlled rectifier conduction |
| DE2825794C2 (de) * | 1978-06-13 | 1986-03-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Abschaltbarer Thyristor |
| DE2835089A1 (de) * | 1978-08-10 | 1980-03-20 | Siemens Ag | Thyristor |
| JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
-
1980
- 1980-05-14 DE DE19803018499 patent/DE3018499A1/de active Granted
-
1981
- 1981-04-09 US US06/252,338 patent/US4464673A/en not_active Expired - Fee Related
- 1981-05-11 EP EP81103601A patent/EP0039941B1/de not_active Expired
- 1981-05-13 CA CA000377519A patent/CA1164105A/en not_active Expired
- 1981-05-13 JP JP7208981A patent/JPS577159A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS577159A (en) | 1982-01-14 |
| DE3018499C2 (en, 2012) | 1991-03-28 |
| EP0039941A1 (de) | 1981-11-18 |
| US4464673A (en) | 1984-08-07 |
| CA1164105A (en) | 1984-03-20 |
| DE3018499A1 (de) | 1981-11-19 |
| EP0039941B1 (de) | 1986-08-20 |
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