JPS577159A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS577159A
JPS577159A JP7208981A JP7208981A JPS577159A JP S577159 A JPS577159 A JP S577159A JP 7208981 A JP7208981 A JP 7208981A JP 7208981 A JP7208981 A JP 7208981A JP S577159 A JPS577159 A JP S577159A
Authority
JP
Japan
Prior art keywords
semiconductor element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7208981A
Other languages
English (en)
Other versions
JPH0122748B2 (ja
Inventor
Patarongu Heruberuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS577159A publication Critical patent/JPS577159A/ja
Publication of JPH0122748B2 publication Critical patent/JPH0122748B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP7208981A 1980-05-14 1981-05-13 Semiconductor element Granted JPS577159A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803018499 DE3018499A1 (de) 1980-05-14 1980-05-14 Halbleiterbauelement

Publications (2)

Publication Number Publication Date
JPS577159A true JPS577159A (en) 1982-01-14
JPH0122748B2 JPH0122748B2 (ja) 1989-04-27

Family

ID=6102438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7208981A Granted JPS577159A (en) 1980-05-14 1981-05-13 Semiconductor element

Country Status (5)

Country Link
US (1) US4464673A (ja)
EP (1) EP0039941B1 (ja)
JP (1) JPS577159A (ja)
CA (1) CA1164105A (ja)
DE (1) DE3018499A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3118365A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden
US5111268A (en) * 1981-12-16 1992-05-05 General Electric Company Semiconductor device with improved turn-off capability
US4816892A (en) * 1982-02-03 1989-03-28 General Electric Company Semiconductor device having turn-on and turn-off capabilities
JPS5927569A (ja) * 1982-08-06 1984-02-14 Hitachi Ltd 半導体スイツチ素子
DE3370248D1 (en) * 1982-10-04 1987-04-16 Gen Electric Thyristor with turn-off capability
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor
EP0394859A1 (de) * 1989-04-28 1990-10-31 Asea Brown Boveri Ag Bidirektionals, abschaltbares Halbeiterbauelement
FR2712428B1 (fr) * 1993-11-10 1996-02-09 Sgs Thomson Microelectronics Commutateur bidirectionnel à commande en tension.
DE19721655C1 (de) * 1997-05-23 1998-12-03 Daimler Benz Ag Thyristor mit Selbstschutz
JP3831846B2 (ja) * 2003-06-09 2006-10-11 富士電機デバイステクノロジー株式会社 半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (ja) * 1962-06-11
JPS5629458B2 (ja) * 1973-07-02 1981-07-08
DE2438894C3 (de) * 1974-08-13 1979-02-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor mit Kurzschlußemitter
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4115707A (en) * 1977-03-31 1978-09-19 Rca Corporation Circuit for single-line control of GTO controlled rectifier conduction
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
DE2835089A1 (de) * 1978-08-10 1980-03-20 Siemens Ag Thyristor
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch

Also Published As

Publication number Publication date
DE3018499A1 (de) 1981-11-19
CA1164105A (en) 1984-03-20
JPH0122748B2 (ja) 1989-04-27
DE3018499C2 (ja) 1991-03-28
EP0039941A1 (de) 1981-11-18
EP0039941B1 (de) 1986-08-20
US4464673A (en) 1984-08-07

Similar Documents

Publication Publication Date Title
JPS57170546A (en) Semiconductor element
GB2072526B (en) Humidiffier element
JPS57115867A (en) Semiconductor switching element
DE3163340D1 (en) Semiconductor device
GB8331916D0 (en) Semiconductor devices
EP0042489A3 (en) Semiconductor devices
JPS5712525A (en) Semiconductor element
EP0055558A3 (en) Semiconductor device
GB2075257B (en) Semiconductor device manufacture
DE3173835D1 (en) Semiconductor devices
GB8329071D0 (en) Semiconductor
DE3161615D1 (en) Semiconductor device
DE3166929D1 (en) Semiconductor device
DE3176992D1 (en) Semiconductor resistor element
DE3175373D1 (en) Semiconductor device
JPS577159A (en) Semiconductor element
EP0048358A3 (en) Semiconductor device
GB2089567B (en) Semiconductor device manufacture
DE3162083D1 (en) Semiconductor device
DE3174500D1 (en) Semiconductor device
DE3174789D1 (en) Semiconductor device
DE3175783D1 (en) Semiconductor device
JPS57103353A (en) Controllable semiconductor constituent element
GB8326563D0 (en) Semiconductor devices
GB2084396B (en) A-tin semiconductor device