JPS577159A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS577159A JPS577159A JP7208981A JP7208981A JPS577159A JP S577159 A JPS577159 A JP S577159A JP 7208981 A JP7208981 A JP 7208981A JP 7208981 A JP7208981 A JP 7208981A JP S577159 A JPS577159 A JP S577159A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19803018499 DE3018499A1 (de) | 1980-05-14 | 1980-05-14 | Halbleiterbauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS577159A true JPS577159A (en) | 1982-01-14 |
JPH0122748B2 JPH0122748B2 (ja) | 1989-04-27 |
Family
ID=6102438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7208981A Granted JPS577159A (en) | 1980-05-14 | 1981-05-13 | Semiconductor element |
Country Status (5)
Country | Link |
---|---|
US (1) | US4464673A (ja) |
EP (1) | EP0039941B1 (ja) |
JP (1) | JPS577159A (ja) |
CA (1) | CA1164105A (ja) |
DE (1) | DE3018499A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3118365A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden |
US5111268A (en) * | 1981-12-16 | 1992-05-05 | General Electric Company | Semiconductor device with improved turn-off capability |
US4816892A (en) * | 1982-02-03 | 1989-03-28 | General Electric Company | Semiconductor device having turn-on and turn-off capabilities |
JPS5927569A (ja) * | 1982-08-06 | 1984-02-14 | Hitachi Ltd | 半導体スイツチ素子 |
DE3370248D1 (en) * | 1982-10-04 | 1987-04-16 | Gen Electric | Thyristor with turn-off capability |
US4717940A (en) * | 1986-03-11 | 1988-01-05 | Kabushiki Kaisha Toshiba | MIS controlled gate turn-off thyristor |
EP0394859A1 (de) * | 1989-04-28 | 1990-10-31 | Asea Brown Boveri Ag | Bidirektionals, abschaltbares Halbeiterbauelement |
FR2712428B1 (fr) * | 1993-11-10 | 1996-02-09 | Sgs Thomson Microelectronics | Commutateur bidirectionnel à commande en tension. |
DE19721655C1 (de) * | 1997-05-23 | 1998-12-03 | Daimler Benz Ag | Thyristor mit Selbstschutz |
JP3831846B2 (ja) * | 2003-06-09 | 2006-10-11 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL293292A (ja) * | 1962-06-11 | |||
JPS5629458B2 (ja) * | 1973-07-02 | 1981-07-08 | ||
DE2438894C3 (de) * | 1974-08-13 | 1979-02-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor mit Kurzschlußemitter |
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
US4115707A (en) * | 1977-03-31 | 1978-09-19 | Rca Corporation | Circuit for single-line control of GTO controlled rectifier conduction |
DE2825794C2 (de) * | 1978-06-13 | 1986-03-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Abschaltbarer Thyristor |
DE2835089A1 (de) * | 1978-08-10 | 1980-03-20 | Siemens Ag | Thyristor |
JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
-
1980
- 1980-05-14 DE DE19803018499 patent/DE3018499A1/de active Granted
-
1981
- 1981-04-09 US US06/252,338 patent/US4464673A/en not_active Expired - Fee Related
- 1981-05-11 EP EP81103601A patent/EP0039941B1/de not_active Expired
- 1981-05-13 CA CA000377519A patent/CA1164105A/en not_active Expired
- 1981-05-13 JP JP7208981A patent/JPS577159A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0122748B2 (ja) | 1989-04-27 |
EP0039941A1 (de) | 1981-11-18 |
US4464673A (en) | 1984-08-07 |
DE3018499A1 (de) | 1981-11-19 |
EP0039941B1 (de) | 1986-08-20 |
CA1164105A (en) | 1984-03-20 |
DE3018499C2 (ja) | 1991-03-28 |
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