JPS6154262B2 - - Google Patents
Info
- Publication number
- JPS6154262B2 JPS6154262B2 JP55033345A JP3334580A JPS6154262B2 JP S6154262 B2 JPS6154262 B2 JP S6154262B2 JP 55033345 A JP55033345 A JP 55033345A JP 3334580 A JP3334580 A JP 3334580A JP S6154262 B2 JPS6154262 B2 JP S6154262B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- electrode plate
- electrode
- cathode
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W70/20—
-
- H10W72/00—
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3334580A JPS56130969A (en) | 1980-03-18 | 1980-03-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3334580A JPS56130969A (en) | 1980-03-18 | 1980-03-18 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11981080A Division JPS56131955A (en) | 1980-09-01 | 1980-09-01 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56130969A JPS56130969A (en) | 1981-10-14 |
| JPS6154262B2 true JPS6154262B2 (index.php) | 1986-11-21 |
Family
ID=12383971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3334580A Granted JPS56130969A (en) | 1980-03-18 | 1980-03-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56130969A (index.php) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58148433A (ja) * | 1982-02-26 | 1983-09-03 | Mitsubishi Electric Corp | 半導体装置 |
| JPS5986260A (ja) * | 1982-11-10 | 1984-05-18 | Hitachi Ltd | ゲ−トタ−ンオフサイリスタ |
| JPS60194565A (ja) * | 1984-03-15 | 1985-10-03 | Mitsubishi Electric Corp | 半導体装置 |
| JPS61208873A (ja) * | 1985-03-13 | 1986-09-17 | Res Dev Corp Of Japan | 圧接構造型両面ゲ−ト静電誘導サイリスタ |
| JPS6276636A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 半導体装置 |
| JPH0719784B2 (ja) * | 1985-10-02 | 1995-03-06 | 株式会社日立製作所 | 平形半導体装置 |
| JPH0382080A (ja) * | 1989-08-24 | 1991-04-08 | Mitsubishi Electric Corp | バイポーラ型半導体スィッチング装置 |
| JP4073801B2 (ja) * | 2003-02-12 | 2008-04-09 | 三菱電機株式会社 | 圧接型半導体装置 |
-
1980
- 1980-03-18 JP JP3334580A patent/JPS56130969A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56130969A (en) | 1981-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6358376B2 (index.php) | ||
| JP3256636B2 (ja) | 圧接型半導体装置 | |
| JPH06188411A (ja) | カットオフ可能な高出力半導体素子 | |
| US4161740A (en) | High frequency power transistor having reduced interconnection inductance and thermal resistance | |
| JPS6156628B2 (index.php) | ||
| JPS6154262B2 (index.php) | ||
| EP0051459B1 (en) | A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same | |
| JP3714954B2 (ja) | 高電圧ブレークオーバダイオード | |
| EP0421344B1 (en) | Crimp-type power semiconductor device | |
| JP2502386B2 (ja) | 半導体装置 | |
| JPS6353702B2 (index.php) | ||
| JPH0666411B2 (ja) | 平形半導体装置 | |
| JPH0142498B2 (index.php) | ||
| JPS6364907B2 (index.php) | ||
| US4380114A (en) | Method of making a semiconductor switching device | |
| US10854581B2 (en) | Die stack assembly using an edge separation structure for connectivity through a die of the stack | |
| US3659334A (en) | High power high frequency device | |
| WO2002091474A1 (fr) | Dispositif a semi-conducteur et son procede de production | |
| US4605949A (en) | Semiconductor device with interdigitated electrodes | |
| US5798287A (en) | Method for forming a power MOS device chip | |
| JP2004221269A (ja) | 半導体装置 | |
| JPH04297071A (ja) | 半導体装置 | |
| JPS6279668A (ja) | 平形半導体装置 | |
| JP3117215B2 (ja) | 圧接型半導体装置 | |
| JPS6226582B2 (index.php) |